KR970077209A - Method of forming a contact hole in a semiconductor device - Google Patents
Method of forming a contact hole in a semiconductor device Download PDFInfo
- Publication number
- KR970077209A KR970077209A KR1019960017136A KR19960017136A KR970077209A KR 970077209 A KR970077209 A KR 970077209A KR 1019960017136 A KR1019960017136 A KR 1019960017136A KR 19960017136 A KR19960017136 A KR 19960017136A KR 970077209 A KR970077209 A KR 970077209A
- Authority
- KR
- South Korea
- Prior art keywords
- forming
- contact hole
- buffer layer
- layer
- semiconductor device
- Prior art date
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- Drying Of Semiconductors (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
본 발명은 반도체 소자의 콘택 홀 형성 방법에 관한 것으로, 노광 장비의 임계 치수(Critical dimension)보다 작은 폭을 갖는 콘택홀을 형성하기 위하여 감광막 하부에 버퍼층을 형성하고, 상기 버퍼층 식각시 생성된 폴리머가 상기 버퍼층의 식각된 측벽에 증착되도록 한다. 그리고 노출된 부분의 절연층을 식각하므로써 노관 장비의 임계 치수보다 작은 폭을 갖는 미세 콘택 홀을 형성할 수 있으며, 따라서 반도체 소자의 집적도를 향상시킬수 있는 반도체 소자의 콘택 홀 형성 방법에 관한 것이다.The present invention relates to a method for forming a contact hole in a semiconductor device, in which a buffer layer is formed under a photoresist layer to form a contact hole having a width smaller than a critical dimension of an exposure apparatus, To be deposited on the etched sidewalls of the buffer layer. And a method of forming a contact hole in a semiconductor device capable of forming a fine contact hole having a width smaller than a critical dimension of the furnace tube by etching the insulating layer of the exposed portion and thus improving the degree of integration of the semiconductor element.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is a trivial issue, I did not include the contents of the text.
제2A 내지 제 2C도는 본 발명에 따른 반도체 소자의 콘택 홀 형성 방법을 설명하기 위한 소자의 단면도.2A to 2C are sectional views of a device for explaining a contact hole forming method of a semiconductor device according to the present invention.
Claims (6)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019960017136A KR970077209A (en) | 1996-05-21 | 1996-05-21 | Method of forming a contact hole in a semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019960017136A KR970077209A (en) | 1996-05-21 | 1996-05-21 | Method of forming a contact hole in a semiconductor device |
Publications (1)
Publication Number | Publication Date |
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KR970077209A true KR970077209A (en) | 1997-12-12 |
Family
ID=66220175
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019960017136A KR970077209A (en) | 1996-05-21 | 1996-05-21 | Method of forming a contact hole in a semiconductor device |
Country Status (1)
Country | Link |
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KR (1) | KR970077209A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20010060984A (en) * | 1999-12-28 | 2001-07-07 | 박종섭 | Manufacturing method for contact hole in semiconductor device |
KR100485159B1 (en) * | 2003-01-30 | 2005-04-22 | 동부아남반도체 주식회사 | Formation method of contact hole in semiconductor device |
KR100632575B1 (en) * | 2000-06-22 | 2006-10-09 | 주식회사 하이닉스반도체 | Capacitor Formation Method of Semiconductor Device |
KR100695756B1 (en) * | 1999-11-15 | 2007-03-15 | (주) 인텔리마이크론즈 | LIGA process and method manufacturing microstructures using the same |
KR100721250B1 (en) * | 2005-12-29 | 2007-05-22 | 동부일렉트로닉스 주식회사 | Method for fine contact hole of semiconductor device |
KR100801307B1 (en) * | 2005-06-28 | 2008-02-05 | 주식회사 하이닉스반도체 | Method for fabricating semiconductor device |
-
1996
- 1996-05-21 KR KR1019960017136A patent/KR970077209A/en not_active Application Discontinuation
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100695756B1 (en) * | 1999-11-15 | 2007-03-15 | (주) 인텔리마이크론즈 | LIGA process and method manufacturing microstructures using the same |
KR20010060984A (en) * | 1999-12-28 | 2001-07-07 | 박종섭 | Manufacturing method for contact hole in semiconductor device |
KR100632575B1 (en) * | 2000-06-22 | 2006-10-09 | 주식회사 하이닉스반도체 | Capacitor Formation Method of Semiconductor Device |
KR100485159B1 (en) * | 2003-01-30 | 2005-04-22 | 동부아남반도체 주식회사 | Formation method of contact hole in semiconductor device |
KR100801307B1 (en) * | 2005-06-28 | 2008-02-05 | 주식회사 하이닉스반도체 | Method for fabricating semiconductor device |
US7670957B2 (en) | 2005-06-28 | 2010-03-02 | Hynix Semiconductor Inc. | Method for fabricating semiconductor device |
KR100721250B1 (en) * | 2005-12-29 | 2007-05-22 | 동부일렉트로닉스 주식회사 | Method for fine contact hole of semiconductor device |
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