KR970018884A - Laser diode manufacturing method - Google Patents

Laser diode manufacturing method Download PDF

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Publication number
KR970018884A
KR970018884A KR1019950032093A KR19950032093A KR970018884A KR 970018884 A KR970018884 A KR 970018884A KR 1019950032093 A KR1019950032093 A KR 1019950032093A KR 19950032093 A KR19950032093 A KR 19950032093A KR 970018884 A KR970018884 A KR 970018884A
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KR
South Korea
Prior art keywords
etching solution
laser diode
inp
layer
etching
Prior art date
Application number
KR1019950032093A
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Korean (ko)
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KR100372768B1 (en
Inventor
강중구
한상국
최보훈
정승조
신영근
Original Assignee
김주용
현대전자산업 주식회사
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Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019950032093A priority Critical patent/KR100372768B1/en
Publication of KR970018884A publication Critical patent/KR970018884A/en
Application granted granted Critical
Publication of KR100372768B1 publication Critical patent/KR100372768B1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2214—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on oxides or nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18344—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] characterized by the mesa, e.g. dimensions or shape of the mesa

Abstract

본 발명은 광통신용 반도체 레이저 다이오드 제조방법에 관한것으로, 선택적 식각용액과 비선택적 식각용액을 사용하는 2단계 습식식각을 함으로써 역 메사 구조의 표면 상태의 거침과 깨끗하지 못한 단점을 해결할 수 있는 기술로 역메사 형태가 요구되는 모든 화합물 반도체소자에 적용할 수 있는 것이다.The present invention relates to a method for manufacturing a semiconductor laser diode for an optical communication, by performing a two-step wet etching using a selective etching solution and a non-selective etching solution to solve the rough and unclean disadvantages of the surface state of the reverse mesa structure It is applicable to all compound semiconductor devices that require a reverse mesa form.

Description

레이저 다이오드 제조방법Laser diode manufacturing method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도 내지 제5도는 본 발명의 실시예에 레이저 다이오드를 제조하는 단계를 도시한 단면도.1 through 5 are cross-sectional views illustrating steps of manufacturing a laser diode in an embodiment of the present invention.

Claims (4)

레이저 다이오드 제조방법에 있어서, n+InP 기판 상부에 n-InP 클래드층, 액티브층, p-InP 클래드 층을 순차적으로 적층하는 단계와, 상기 p-InP 클래드층 상부에 산화막패턴을 형성하는 단계와, 상기 산화막패턴을 마스크로 사용하여 상기 p-InP 클래드층을 HCl:H2O의 식각용액에서 선택적으로 식각하는 단계와, Br-MeOH 식각용액에서 상기 p-InP 클래드층과 노출된 액티브층에서 n-InP클래드층의 일정 깊이까지 식각하여 역메사 구조로 형성하는 단계를 포함하는 레이저 다이오드 제조방법.A method of manufacturing a laser diode, comprising: sequentially depositing an n-InP cladding layer, an active layer, and a p-InP cladding layer on an n + InP substrate, and forming an oxide layer pattern on the p-InP cladding layer; Selectively etching the p-InP clad layer in an HCl: H 2 O etching solution using the oxide pattern as a mask, and exposing the p-InP clad layer and an exposed active layer in a Br-MeOH etching solution. A method of manufacturing a laser diode comprising etching to a predetermined depth of the n-InP cladding layer to form an inverted mesa structure. 제1항에 있어서, 상기 p-InP 클래드층을 식각하는 HCl:H2O 식각용액의 비율은 4:1정도 인 것을 특징으로 하는 레이저 다이오드 제조방법.The method of claim 1, wherein the ratio of HCl: H 2 O etching solution for etching the p-InP cladding layer is about 4: 1. 제1항에 있어서, 상기 Br-MeOH 식각용액은 0.5%의 용액인 것을 특징으로 하는 레이저 다이오드 제조방법.The method of claim 1, wherein the Br-MeOH etching solution is a 0.5% solution. 제1항에 있어서, 상기 Br-MeOH 식각용액에서 1시간 충분히 섞어주는 것을 특징으로 하는 레이저 다이오드 제조방법.2. The method of claim 1, wherein the Br-MeOH etching solution is sufficiently mixed for 1 hour. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950032093A 1995-09-27 1995-09-27 Method for fabricating laser diode KR100372768B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950032093A KR100372768B1 (en) 1995-09-27 1995-09-27 Method for fabricating laser diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950032093A KR100372768B1 (en) 1995-09-27 1995-09-27 Method for fabricating laser diode

Publications (2)

Publication Number Publication Date
KR970018884A true KR970018884A (en) 1997-04-30
KR100372768B1 KR100372768B1 (en) 2003-05-12

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ID=37416653

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950032093A KR100372768B1 (en) 1995-09-27 1995-09-27 Method for fabricating laser diode

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KR (1) KR100372768B1 (en)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5362675A (en) * 1991-12-24 1994-11-08 Samsung Electronics Co., Ltd. Manufacturing method of laser diode and laser diode array

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Publication number Publication date
KR100372768B1 (en) 2003-05-12

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