KR970018885A - Laser diode manufacturing method - Google Patents

Laser diode manufacturing method Download PDF

Info

Publication number
KR970018885A
KR970018885A KR1019950032096A KR19950032096A KR970018885A KR 970018885 A KR970018885 A KR 970018885A KR 1019950032096 A KR1019950032096 A KR 1019950032096A KR 19950032096 A KR19950032096 A KR 19950032096A KR 970018885 A KR970018885 A KR 970018885A
Authority
KR
South Korea
Prior art keywords
mesa structure
inp
layer
cladding layer
hbr
Prior art date
Application number
KR1019950032096A
Other languages
Korean (ko)
Other versions
KR100340111B1 (en
Inventor
강중구
한상국
최보훈
정승조
신영근
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019950032096A priority Critical patent/KR100340111B1/en
Publication of KR970018885A publication Critical patent/KR970018885A/en
Application granted granted Critical
Publication of KR100340111B1 publication Critical patent/KR100340111B1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3202—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching

Abstract

본 발명은 광통신용 반도체 레이저 다이오드 제조방법에 관한것으로, 메사구조에서 언더컷이 너무 심하게 발생되어 후속의 저류차단층을 성장시킬때 언더컷 안쪽의 성장속도가 저하되는 것을 해소하기 위하여 1차 메사 구조를 형성한다음, 상기 메사구조 상부면에만 남도록 산화막패턴을 형성하고, 약간의 언터컷이 발생하도록 2차 식각한 다음, 전류 차단층을 형성하는 것이다.The present invention relates to a method for manufacturing a semiconductor laser diode for optical communication, in which the undercut is generated so severely in the mesa structure that a primary mesa structure is formed in order to eliminate a decrease in the growth rate inside the undercut when growing a subsequent blocking layer. Then, an oxide film pattern is formed to remain only on the upper surface of the mesa structure, and secondary etching is performed to generate some undercut, and then a current blocking layer is formed.

Description

레이저 다이오드 제조방법Laser diode manufacturing method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제6도 내지 제1도는 본발명의 실시예에 의해 레이저 다이오드를 제조하는 단계를 도시한 단면도.6 through 1 are cross-sectional views illustrating steps of manufacturing a laser diode according to an embodiment of the present invention.

Claims (3)

레이저 다이오드 제조방법에 있어서, n-InP 기판 상부에 n-InP 클래드층, 엑티브층, p-InP 클래드 층을 순차적으로 적층하는 단계와, 상기 p-InP 클래드층 상부에 감광막 패턴을 형성하는 단계와, 상기 감광막 패턴을 마스크로 사용하여 p-InP 클래드층에서 상기 n-InP 클래드층 까지 HBr:H2O2:H2O 식각 용액에서 일정깊이 식가하여 메사구조를 형성하는 단계와, 상기 감광막패턴을 제거하고, 상기 메사 구조의 최상부면에 있는 산화막 패턴을 형성하는 단계와, 상기 산화막패턴을 마스크로 이용하고, HBr:H2O2:H2O:HCl 식각 용액에서 상기 산화막 패턴의 양측 가장자리 하부에서 약간의 언더컷이 생길정도로 식각하는 단계와, 상기 메사구조의 측면에 전류 차단층으로 p-InP층 및 n-InP층을 형성하는 단계를 포함하는 레이저 다이오드 제조방법.A method of manufacturing a laser diode, comprising: sequentially depositing an n-InP cladding layer, an active layer, and a p-InP cladding layer on an n-InP substrate, and forming a photoresist pattern on the p-InP cladding layer; Using the photoresist pattern as a mask to form a mesa structure by etching a predetermined depth from a p-InP cladding layer to an n-InP cladding layer in an HBr: H 2 O 2 : H 2 O etching solution, and the photoresist pattern Forming an oxide pattern on the top surface of the mesa structure, using the oxide pattern as a mask, and using both edges of the oxide pattern in an HBr: H 2 O 2 : H 2 O: HCl etching solution Etching to a degree that a slight undercut occurs in the lower portion, and forming a p-InP layer and an n-InP layer as a current blocking layer on the side of the mesa structure. 제1항에 있어서, 상기 메사구조를 형성하기 위한 HBr:H2O2:H2O의 비율은 1:1:10 정도인 것을 특징으로 하는 레이저 다이오드 제조방법.The method of claim 1, wherein the ratio of HBr: H 2 O 2 : H 2 O to form the mesa structure is about 1: 1: 10. 제1항에 있어서, 상기 HBr:H2O2:H2O:HCl 식각 용액의 비율은 10:2:20:20 정도인 것을 특징으로 하는 레이저 다이오드 제조방법.The method of claim 1, wherein the ratio of the HBr: H 2 O 2 : H 2 O: HCl etching solution is about 10: 2: 20: 20. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950032096A 1995-09-27 1995-09-27 Method for manufacturing laser diode KR100340111B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950032096A KR100340111B1 (en) 1995-09-27 1995-09-27 Method for manufacturing laser diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950032096A KR100340111B1 (en) 1995-09-27 1995-09-27 Method for manufacturing laser diode

Publications (2)

Publication Number Publication Date
KR970018885A true KR970018885A (en) 1997-04-30
KR100340111B1 KR100340111B1 (en) 2002-10-31

Family

ID=37480228

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950032096A KR100340111B1 (en) 1995-09-27 1995-09-27 Method for manufacturing laser diode

Country Status (1)

Country Link
KR (1) KR100340111B1 (en)

Also Published As

Publication number Publication date
KR100340111B1 (en) 2002-10-31

Similar Documents

Publication Publication Date Title
KR970018885A (en) Laser diode manufacturing method
KR970054992A (en) Laser diode manufacturing method
KR970054972A (en) Laser diode manufacturing method
KR960016034A (en) Laser diode manufacturing method
KR970024405A (en) Laser diode manufacturing method
KR100372768B1 (en) Method for fabricating laser diode
KR970054994A (en) Laser diode manufacturing method
KR970054580A (en) Laser diode manufacturing method
KR970054973A (en) Laser diode manufacturing method
KR960002976A (en) Laser diode manufacturing method
KR960010007B1 (en) Laser diode manufacturing method
KR970054966A (en) Manufacturing method of laser diode for optical communication
KR960027098A (en) Semiconductor laser diode and manufacturing method thereof
KR100289146B1 (en) Method for making a mesa of laser diode of buried heterostructure
KR970018882A (en) Semiconductor laser diode and manufacturing method thereof
KR970018883A (en) Laser diode manufacturing method
KR950012940A (en) Indexed waveguide semiconductor laser diode and method of manufacturing the same
KR920008891B1 (en) Manufacturing method of buried heterostructure laser diode
KR950010206A (en) Manufacturing method of laser diode
KR950012937A (en) Manufacturing method of semiconductor laser device
KR970024400A (en) Method for manufacturing laser diode with inverted mesa structure
KR970077856A (en) Semiconductor laser diode manufacturing method
KR960002981A (en) Semiconductor laser diode and manufacturing method thereof
KR960027108A (en) Laser diode manufacturing method
KR960027107A (en) Laser diode manufacturing method

Legal Events

Date Code Title Description
A201 Request for examination
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20050422

Year of fee payment: 4

LAPS Lapse due to unpaid annual fee