KR970024400A - Method for manufacturing laser diode with inverted mesa structure - Google Patents

Method for manufacturing laser diode with inverted mesa structure Download PDF

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Publication number
KR970024400A
KR970024400A KR1019950033879A KR19950033879A KR970024400A KR 970024400 A KR970024400 A KR 970024400A KR 1019950033879 A KR1019950033879 A KR 1019950033879A KR 19950033879 A KR19950033879 A KR 19950033879A KR 970024400 A KR970024400 A KR 970024400A
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KR
South Korea
Prior art keywords
layer
mesa structure
inp
etching solution
laser diode
Prior art date
Application number
KR1019950033879A
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Korean (ko)
Other versions
KR0159015B1 (en
Inventor
이상용
김돈수
이재혁
김앙서
김남준
신영근
Original Assignee
김주용
현대전자산업 주식회사
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Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019950033879A priority Critical patent/KR0159015B1/en
Publication of KR970024400A publication Critical patent/KR970024400A/en
Application granted granted Critical
Publication of KR0159015B1 publication Critical patent/KR0159015B1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking

Abstract

본 발명은 역 메사 구조를 갖는 RWG(ridge wavegide) 레이저 다이오드 제조방법에 관한 것으로, 역 메사 구조를 제조하기 위하여 InP 층을 HBr 과 H2O의 식각용액에서 식각 하는 것으로 상기 식각용액은 일반적인 RWG 레이저 다이오드의 제작 방향인 (110)방향으로 식각 마스크를 제작하였을 경우 InP의 (331)결정면을 선택 식각 하기 때문에 역메사 구조를 제조할 수가 있다.The present invention relates to a method for manufacturing a RWG (ridge wavegide) laser diode having a reverse mesa structure, in order to prepare a reverse mesa structure by etching the InP layer in the etching solution of HBr and H 2 O, the etching solution is a general RWG laser When the etching mask is manufactured in the (110) direction, which is the manufacturing direction of the diode, the inverted mesa structure can be manufactured because the (331) crystal plane of InP is selectively etched.

Description

역 메사 구조를 갖는 레이저 다이오드 제조방법Method for manufacturing laser diode with inverted mesa structure

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제4도 내지 제6도는 본 발명에 의해 역 메사 구조를 갖는 RWG 레이저 다이오드를 제조하는 단계를 도시한 단면도.4 through 6 are cross-sectional views showing steps of manufacturing an RWG laser diode having an inverted mesa structure according to the present invention.

Claims (4)

n-InP 기판상부에 u-InGaAsP 층, p-InP 층, p-InGaAsP 층, p-InP 층, p-InGaAs 콘택층을 순차적으로 적층하고, 그 상부에 식각 마스크용 산화막패턴을 형성하는 단계와, 노출된 p-InGaAs 콘택층을 식각하고, 그 하부의 p-InP 층을 HBr:H2O의 식각 용액에서 하부의 u-InGaAsP 층이 노출되기 까지 식각하여 홈을 형성하는 동시에 역메사 구조를 형성하는 단계와, 산화막 패턴을 제거하고, 전면에 걸쳐 산화막을 일정두께 형성하고, 상기 홈에 폴리이마이드를 채운다음, 상기 중앙부의 역 메사 구조의 상부면에서 노출되는 산화막을 식각하는 단계와, 전체적으로 금속층을 형성하여 노출된 p-InGaAs 콘택층에 전기적으로 접속하는 단계를 포함하는 역 메사 구조를 갖는 레이저 다이오드 제조방법.sequentially depositing a u-InGaAsP layer, a p-InP layer, a p-InGaAsP layer, a p-InP layer, and a p-InGaAs contact layer on an n-InP substrate, and forming an oxide film pattern for an etching mask thereon; The exposed p-InGaAs contact layer is etched, and the lower p-InP layer is etched from the etching solution of HBr: H 2 O until the lower u-InGaAsP layer is exposed to form a groove, and a reverse mesa structure is formed. Forming an oxide layer, removing an oxide layer pattern, forming an oxide layer over the entire surface, filling a polyimide in the groove, and then etching the oxide layer exposed on the upper surface of the reverse mesa structure in the center portion, A method of fabricating a laser diode having an inverted mesa structure comprising forming a metal layer and electrically connecting the exposed p-InGaAs contact layer. 제1항에 있어서, 상기 HBr:H2O의 식각용액은 3:1의 부피비를 갖는 식각 용액인 것을 특징으로 하는 역 메사 구조를 갖는 레이저 다이오드 제조방법.The method of claim 1, wherein the etching solution of HBr: H 2 O is an etching solution having a volume ratio of 3: 1. 제1항에 있어서, 상기 HBr:H2O의 식각 용액은 상온에서 부피비로 3:1로 혼합하여 교반기(stirrer)에서 10분 교반한 것을 특징으로 하는 역 메사 구조를 갖는 레이저 다이오드 제조방법.The method of claim 1, wherein the etching solution of HBr: H 2 O is mixed at a volume ratio of 3: 1 at room temperature and stirred for 10 minutes in a stirrer. 제1항에 있어서, 상기 식각 마스크용 산화막패턴은 레이저 다이오드의 제조 방향인 (110) 방향으로 제조하고 InP의 (331)결정면을 선택 식각 하는 것을 특징으로 하는 역 메사 구조를 갖는 레이저 다이오드 제조방법.The method of claim 1, wherein the oxide mask pattern for the etch mask is manufactured in a (110) direction, which is a manufacturing direction of the laser diode, and selectively etches the (331) crystal surface of InP. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950033879A 1995-10-04 1995-10-04 Method of manufacturing laser diode KR0159015B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950033879A KR0159015B1 (en) 1995-10-04 1995-10-04 Method of manufacturing laser diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950033879A KR0159015B1 (en) 1995-10-04 1995-10-04 Method of manufacturing laser diode

Publications (2)

Publication Number Publication Date
KR970024400A true KR970024400A (en) 1997-05-30
KR0159015B1 KR0159015B1 (en) 1999-02-01

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7508857B2 (en) 2004-12-14 2009-03-24 Electronics And Telecommunications Research Institute Semiconductor laser diode and method of manufacturing the same
KR100710048B1 (en) 2004-12-14 2007-04-23 한국전자통신연구원 Semiconductor laser diode and a method for manufacturing the same

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