KR960019684A - 리드프레임과 그 제조방법 - Google Patents

리드프레임과 그 제조방법 Download PDF

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KR960019684A
KR960019684A KR1019950042192A KR19950042192A KR960019684A KR 960019684 A KR960019684 A KR 960019684A KR 1019950042192 A KR1019950042192 A KR 1019950042192A KR 19950042192 A KR19950042192 A KR 19950042192A KR 960019684 A KR960019684 A KR 960019684A
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lead
forming
etching
protective film
leads
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KR100346630B1 (ko
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겐지 오사와
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이데이 노부유키
소니 가부시기가이샤
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
    • H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
    • H01L23/24—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device solid or gel at the normal operating temperature of the device
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    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
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    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Dispersion Chemistry (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Wire Bonding (AREA)

Abstract

디바이스홀(2)을 가지는 절연성 보호막(1)의 표면에 리드(3)를 형성하고, 이 리드(3)에 반절연성(反絶緣性) 보호막측에 돌기전극(땜납볼)(7)을 형성한다. 또한, 절연성 보호막(1)의 배면에 보강판(5)을 형성하는 구조의 리드프레임에 의하여, 반도체장치의 저가격화, 박형화의 요구에 부응할 수 있고, 고신뢰도의 리드프레임을 제공할 수 있다.

Description

리드프레임과 그 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도는 본 발명 리드프레임의 하나의 실시예를 나타낸 단면도.

Claims (6)

  1. 디바이스홀을 가지는 절연성 보호막의 표면에, 이 디바이스홀에 뻗어나오는 인너리드로 반도체칩의 전극에 접속되어 아우터리드에 돌기전극이 접속되는 다수의 리드가 형성되고, 상기 리드의 아우터리드의 반절연성(反絶緣性) 보호막측에 돌기 전극이 형성된 것을 특징으로 하는 리드프레임.
  2. 제1항에 있어서, 절연성 보호막의 반리드측의 면에 보강판이 형성된 것을 특징으로 하는 리드프레임.
  3. 리드형성용 기판의 표면에 에칭스톱층을 통하여 다수의 리드를 형성하는 공정과, 상기 리드의 반리드형성용 기판측의 면에 디바이스홀을 가지는 절연성 보호막을 접착하는 공정과, 상기 리드형성용 기판의 상기 리드의 형성영역을 뒷쪽으로부터의 에칭에 의하여 제거하는 공정과, 상기 에칭스톱층을 상기 리드를 마스크로 하여 에칭하는 공정과, 상기 리드의 아우터리드에 돌기전극을 형성하는 공정과를 가지는 것을 특징으로 하는 제1항 기재의 리드프레임의 제조방법.
  4. 리드형성용 기판의 표면에 에칭스톱층을 통하여 다수의 리드를 형성하는 공정과, 상기 리드형성용 기판의 리드형성영역의 배면을 하프에칭하는 공정과, 상기 리드형성용 기판의 리드형성면상에, 돌기전극을 형성할 부분에 개구를 가지는 솔더레지스트를 형성하는 공정과, 상기 솔더레지스트를 마스크로 하여 전해도금에 의하여 리드에 돌기 전극을 형성하는 공정과, 상기 리드형성용 기판의 리드의 형성영역의 배면의 잔존부분을 에칭하고, 그 후 상기 에칭스톱층을 상기 리드를 마스크로 하여 에칭하는 공정과, 상기 리드의 반돌기전극형성면측에 디바이스홀을 가지는 절연성 보호막을 접착하는 공정과를 가지는 것을 특징으로 하는 제1항 기재의 리드프레임의 제조방법.
  5. 다수의 리드의 한쪽의 측에 그 각 아우터리드가 노출되는 개구를 가지는 솔더레지스트를 형성하고, 상기 각 아우터리드의 노출되는 부분에 돌기전극을 형성하여 이루어지는 것을 특징으로 하는 리드프레임.
  6. 리드형성용 기판상에 에칭스톱층을 통하여 다수의 리드를 형성하는 공정과, 상기 리드형성용 기판의 리드가 형성된 면상에, 돌기전극을 형성할 부분에 개구를 가지는 솔더레지스트를 형성하는 공정과, 상기 솔더레지스트를 마스크로 하여 전해도금에 의하여 리드에 돌기전극을 형성하는 공정과, 상기 리드형성용 기판의 리드형성영역의 배면의 잔존부분을 에칭하는 공정과를 가지는 것을 특징으로 하는 제5항 기재의 리드프레임의 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950042192A 1994-11-22 1995-11-20 리드프레임과그제조방법 KR100346630B1 (ko)

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JP1994-314166 1994-11-22
JP94-314166 1994-11-22
JP6314166A JP2967697B2 (ja) 1994-11-22 1994-11-22 リードフレームの製造方法と半導体装置の製造方法

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KR100346630B1 KR100346630B1 (ko) 2002-10-31

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JP2891665B2 (ja) 1996-03-22 1999-05-17 株式会社日立製作所 半導体集積回路装置およびその製造方法
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US5756377A (en) 1998-05-26
US20010014491A1 (en) 2001-08-16
JPH08148530A (ja) 1996-06-07
CN1097313C (zh) 2002-12-25
CN1197137C (zh) 2005-04-13
US6391684B2 (en) 2002-05-21
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JP2967697B2 (ja) 1999-10-25
US6078097A (en) 2000-06-20

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