KR950008447B1 - 기판전위 발생회로 - Google Patents

기판전위 발생회로 Download PDF

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Publication number
KR950008447B1
KR950008447B1 KR1019910009202A KR910009202A KR950008447B1 KR 950008447 B1 KR950008447 B1 KR 950008447B1 KR 1019910009202 A KR1019910009202 A KR 1019910009202A KR 910009202 A KR910009202 A KR 910009202A KR 950008447 B1 KR950008447 B1 KR 950008447B1
Authority
KR
South Korea
Prior art keywords
potential
substrate
substrate potential
mos transistor
detection signal
Prior art date
Application number
KR1019910009202A
Other languages
English (en)
Korean (ko)
Other versions
KR920001855A (ko
Inventor
아끼노리 시바야마
토시오 야마다
Original Assignee
마쯔시다덴기산교 가부시기가이샤
다니이 아끼오
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 마쯔시다덴기산교 가부시기가이샤, 다니이 아끼오 filed Critical 마쯔시다덴기산교 가부시기가이샤
Publication of KR920001855A publication Critical patent/KR920001855A/ko
Application granted granted Critical
Publication of KR950008447B1 publication Critical patent/KR950008447B1/ko

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Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Logic Circuits (AREA)
KR1019910009202A 1990-06-04 1991-06-04 기판전위 발생회로 KR950008447B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2-146542 1990-06-04
JP2146542A JP2682725B2 (ja) 1990-06-04 1990-06-04 半導体装置

Publications (2)

Publication Number Publication Date
KR920001855A KR920001855A (ko) 1992-01-30
KR950008447B1 true KR950008447B1 (ko) 1995-07-31

Family

ID=15410011

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910009202A KR950008447B1 (ko) 1990-06-04 1991-06-04 기판전위 발생회로

Country Status (2)

Country Link
JP (1) JP2682725B2 (ja)
KR (1) KR950008447B1 (ja)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08272467A (ja) * 1995-03-31 1996-10-18 Mitsubishi Electric Corp 基板電位発生回路
JP2924949B2 (ja) * 1996-04-15 1999-07-26 日本電気株式会社 半導体集積回路装置
JP3718106B2 (ja) 2000-05-22 2005-11-16 松下電器産業株式会社 半導体集積回路

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS595320A (ja) * 1982-06-30 1984-01-12 Mitsubishi Electric Corp オンチツプ電源発生回路
JPH01296491A (ja) * 1988-05-25 1989-11-29 Hitachi Ltd 基準電圧発生回路

Also Published As

Publication number Publication date
KR920001855A (ko) 1992-01-30
JPH0438791A (ja) 1992-02-07
JP2682725B2 (ja) 1997-11-26

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