KR930022528A - 수지 봉지형 반도체 장치 - Google Patents

수지 봉지형 반도체 장치 Download PDF

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KR930022528A
KR930022528A KR1019930006966A KR930006966A KR930022528A KR 930022528 A KR930022528 A KR 930022528A KR 1019930006966 A KR1019930006966 A KR 1019930006966A KR 930006966 A KR930006966 A KR 930006966A KR 930022528 A KR930022528 A KR 930022528A
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substrate
resin
semiconductor device
semiconductor element
metal
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KR1019930006966A
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KR960012648B1 (en
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노리아끼 도우센
노부유끼 사또
고우지 아라끼
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사토 후미오
가부시끼가이샤 도시바
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Abstract

본 발명은 반도체 소자의 실장 밀도를 향상하고, 포화열 저항값을 작게해서 허용가능한 파워 손실을 크게하는 것을 목적으로 한다. 단면이 그자형 형성된 금속판(21)은 그 상면 부재(21a)의 내면상에 제2절연회로기판(23)을 설치하고, 그 하면 부재(21b)의 내면상에 제1절연회로 기판(22)을 설치한다. 이들 제1 및 제2절연회로기판(22 및 23)상에 각각 복수의 금속 배선 패턴(24) 및 아우터리드(25)의 일단을 설치하고, 이들 금속 배선 패턴(24)상에 반도체 소자(26a 내지26e)를 도시하지 않은 땜납으로 고정한다. 반도체 소자(26a 내지26e) 및 금속 본딩 와이어(28)의 표면상에 표면 보호재(27)가 도포되고, 상기 제1, 제2절연회로 기판(22 및 23) 및 상기 금속판(21)이 수지 (30)으로 봉지되며, 수지(30)에서 아우터리드(25)의 타단이 돌출해 있다. 따라서 반도체 소자의 실장 밀도를 향상할 수 있어서 포화열 저항값을 작게할 수 있다.

Description

수지 봉지형 반도체 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도(a)는 본 발명의 제1실시예에 의한 수지 봉지형 반도체 장치의 제조방법을 도시하는 것으로, 금속판 상에 제1 및 제2절연 회로 기판을 설치하고, 이들 절연 회로 기판상에 금속 배선 패턴 및 반도체 소자를 설치하는 공정을 도시하는 단면도.
제1도(b)는 제1도(a)에 도시하는 반도체 장치의 평면도.
제2도는 본 발명의 제1실시예에 의한 수지 봉지형 반도체 장치의 제조방법을 도시하는 것으로, 금속판을 그 자형 단면이 되도록 굴고하고, 이 금소판 및 제1, 제2정연회로 기판을 수지 봉지한 단면도.

Claims (4)

  1. 서로 대향하는 제1, 제2면을 가지고, 단면이 그 자형으로 형성된 기판(21), 상기 기판의 제1면상에 설치된 제1절연기판(22), 상기 기판의 제2면상에 설치된 제2절연기판(23), 상기 제1 및 제2절연기판상에 각각 설치된 제1, 제2반도체 회로(26a 내지 26e), 상기 제1 및 제2절연기판에 각각 일단이 설치되고, 상기 반도체 회로와 전기적으로 접속된 제1 및 제2아우터 리드(25a 내지 25f) 및 상기 제1 및 제2아우터 리드의 타단이 노출하여 상기 제1, 제2절연 기판 및 상기 기판을 봉지하기 위한 수지(30)을 포함하는 것을 특징으로 하는 수지 봉지형 반도체장치.
  2. 서로 대향하는 제1, 제2면을 가지고, 단면이 그 자형으로 형성된 기판(21), 상기 기판의 제1면상에 설치된 제1절연기판(22), 상기 기판의 제2면상에 설치된 제2절연기판(23), 상기 제1 및 제2절연기판상에 각각 설치된 제1, 제2면의 상호간 및 상기 제1, 제2절연기판을 봉지하기 위한 수지(30)을 포함하는 것을 특징으로 하는 수지 봉지형 반도체 장치.
  3. 제1항에 있어서,상기 기판은 금속으로 이루어지는 것을 특징으로 하는 수지 봉지형 반도체 장치.
  4. 제2항에 있어서, 상기 기판은 금속으로 이루어지는 것을 특징으로 하는 수지 봉지형 반도체 장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR93006966A 1992-04-27 1993-04-26 Resin-seal type semiconductor device KR960012648B1 (en)

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JP4107786A JP2829188B2 (ja) 1992-04-27 1992-04-27 樹脂封止型半導体装置
JP92-107786 1992-04-27

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KR930022528A true KR930022528A (ko) 1993-11-24
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Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07115151A (ja) * 1993-10-14 1995-05-02 Toshiba Corp 半導体装置及びその製造方法
US5600181A (en) * 1995-05-24 1997-02-04 Lockheed Martin Corporation Hermetically sealed high density multi-chip package
KR100192180B1 (ko) * 1996-03-06 1999-06-15 김영환 멀티-레이어 버텀 리드 패키지
US5814884C1 (en) 1996-10-24 2002-01-29 Int Rectifier Corp Commonly housed diverse semiconductor die
US6144093A (en) * 1998-04-27 2000-11-07 International Rectifier Corp. Commonly housed diverse semiconductor die with reduced inductance
US6300679B1 (en) * 1998-06-01 2001-10-09 Semiconductor Components Industries, Llc Flexible substrate for packaging a semiconductor component
US6265771B1 (en) * 1999-01-27 2001-07-24 International Business Machines Corporation Dual chip with heat sink
WO2003071601A2 (de) * 2002-02-18 2003-08-28 Infineon Technologies Ag Schaltungsmodul und verfahren zu seiner herstellung
DE10214953A1 (de) 2002-04-04 2003-10-30 Infineon Technologies Ag Leistungsmodul mit mindestens zwei Substraten und Verfahren zu seiner Herstellung
KR100699823B1 (ko) * 2003-08-05 2007-03-27 삼성전자주식회사 저가형 플랙서블 필름 패키지 모듈 및 그 제조방법
US7767543B2 (en) * 2005-09-06 2010-08-03 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a micro-electro-mechanical device with a folded substrate
JP4687430B2 (ja) * 2005-12-06 2011-05-25 株式会社デンソー 電子装置およびその製造方法
JP5018483B2 (ja) * 2006-01-25 2012-09-05 日本電気株式会社 電子デバイスパッケージ、モジュール、および電子機器
JP4697118B2 (ja) * 2006-10-23 2011-06-08 株式会社デンソー 電子装置
DE102006056363B4 (de) * 2006-11-29 2010-12-09 Infineon Technologies Ag Halbleitermodul mit mindestens zwei Substraten und Verfahren zur Herstellung eines Halbleitermoduls mit zwei Substraten
US7851908B2 (en) * 2007-06-27 2010-12-14 Infineon Technologies Ag Semiconductor device
JP5257096B2 (ja) * 2009-01-23 2013-08-07 サンケン電気株式会社 半導体装置
DE102010042168A1 (de) * 2010-10-07 2012-04-12 Robert Bosch Gmbh Elektronische Baugruppe sowie Verfahren zu deren Herstellung
DE102012209034A1 (de) * 2012-05-30 2013-12-05 Robert Bosch Gmbh Elektronikmodul sowie Verfahren zur Herstellung eines solchen Elektronikmoduls, sowie elektronisches Steuergerät mit einem solchen Elektronikmodul
JP6258635B2 (ja) * 2013-07-31 2018-01-10 京セラ株式会社 回路基板および電子装置
JP5791670B2 (ja) * 2013-08-02 2015-10-07 株式会社日立製作所 電力変換装置
US20150075849A1 (en) * 2013-09-17 2015-03-19 Jia Lin Yap Semiconductor device and lead frame with interposer
WO2019037867A1 (en) * 2017-08-25 2019-02-28 Huawei Technologies Co., Ltd. SEMICONDUCTOR MODULE AND METHOD FOR MANUFACTURING THE SAME
JP2020004784A (ja) * 2018-06-26 2020-01-09 三菱電機株式会社 パワーモジュールおよび電力変換装置
US11469163B2 (en) 2019-08-02 2022-10-11 Semiconductor Components Industries, Llc Low stress asymmetric dual side module

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR910001419B1 (ko) * 1987-03-31 1991-03-05 가부시키가이샤 도시바 수지봉합형 집적회로장치
US4862322A (en) * 1988-05-02 1989-08-29 Bickford Harry R Double electronic device structure having beam leads solderlessly bonded between contact locations on each device and projecting outwardly from therebetween
JPH0671062B2 (ja) * 1989-08-30 1994-09-07 株式会社東芝 樹脂封止型半導体装置

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JPH05304247A (ja) 1993-11-16
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US5332921A (en) 1994-07-26

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