KR960012648B1 - Resin-seal type semiconductor device - Google Patents

Resin-seal type semiconductor device Download PDF

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Publication number
KR960012648B1
KR960012648B1 KR93006966A KR930006966A KR960012648B1 KR 960012648 B1 KR960012648 B1 KR 960012648B1 KR 93006966 A KR93006966 A KR 93006966A KR 930006966 A KR930006966 A KR 930006966A KR 960012648 B1 KR960012648 B1 KR 960012648B1
Authority
KR
South Korea
Prior art keywords
resin
semiconductor device
type semiconductor
seal type
seal
Prior art date
Application number
KR93006966A
Other languages
English (en)
Other versions
KR930022528A (ko
Inventor
Noriaki Dosen
Nobuyuki Sato
Kouji Araki
Original Assignee
Toshiba Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Kk filed Critical Toshiba Kk
Publication of KR930022528A publication Critical patent/KR930022528A/ko
Application granted granted Critical
Publication of KR960012648B1 publication Critical patent/KR960012648B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/50—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
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    • H01L23/00—Details of semiconductor or other solid state devices
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    • H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
    • H01L23/24—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device solid or gel at the normal operating temperature of the device
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    • H01L23/4334—Auxiliary members in encapsulations
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    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
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    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
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    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
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    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19107—Disposition of discrete passive components off-chip wires

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Dispersion Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
KR93006966A 1992-04-27 1993-04-26 Resin-seal type semiconductor device KR960012648B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP4107786A JP2829188B2 (ja) 1992-04-27 1992-04-27 樹脂封止型半導体装置
JP92-107786 1992-04-27

Publications (2)

Publication Number Publication Date
KR930022528A KR930022528A (ko) 1993-11-24
KR960012648B1 true KR960012648B1 (en) 1996-09-23

Family

ID=14467994

Family Applications (1)

Application Number Title Priority Date Filing Date
KR93006966A KR960012648B1 (en) 1992-04-27 1993-04-26 Resin-seal type semiconductor device

Country Status (3)

Country Link
US (1) US5332921A (ko)
JP (1) JP2829188B2 (ko)
KR (1) KR960012648B1 (ko)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07115151A (ja) * 1993-10-14 1995-05-02 Toshiba Corp 半導体装置及びその製造方法
US5600181A (en) * 1995-05-24 1997-02-04 Lockheed Martin Corporation Hermetically sealed high density multi-chip package
KR100192180B1 (ko) * 1996-03-06 1999-06-15 김영환 멀티-레이어 버텀 리드 패키지
US5814884C1 (en) 1996-10-24 2002-01-29 Int Rectifier Corp Commonly housed diverse semiconductor die
US6144093A (en) * 1998-04-27 2000-11-07 International Rectifier Corp. Commonly housed diverse semiconductor die with reduced inductance
US6300679B1 (en) * 1998-06-01 2001-10-09 Semiconductor Components Industries, Llc Flexible substrate for packaging a semiconductor component
US6265771B1 (en) * 1999-01-27 2001-07-24 International Business Machines Corporation Dual chip with heat sink
WO2003071601A2 (de) * 2002-02-18 2003-08-28 Infineon Technologies Ag Schaltungsmodul und verfahren zu seiner herstellung
DE10214953A1 (de) 2002-04-04 2003-10-30 Infineon Technologies Ag Leistungsmodul mit mindestens zwei Substraten und Verfahren zu seiner Herstellung
KR100699823B1 (ko) * 2003-08-05 2007-03-27 삼성전자주식회사 저가형 플랙서블 필름 패키지 모듈 및 그 제조방법
US7767543B2 (en) * 2005-09-06 2010-08-03 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a micro-electro-mechanical device with a folded substrate
JP4687430B2 (ja) * 2005-12-06 2011-05-25 株式会社デンソー 電子装置およびその製造方法
US8411450B2 (en) * 2006-01-25 2013-04-02 Nec Corporation Electronic device package, module, and electronic device
JP4697118B2 (ja) * 2006-10-23 2011-06-08 株式会社デンソー 電子装置
DE102006056363B4 (de) * 2006-11-29 2010-12-09 Infineon Technologies Ag Halbleitermodul mit mindestens zwei Substraten und Verfahren zur Herstellung eines Halbleitermoduls mit zwei Substraten
US7851908B2 (en) * 2007-06-27 2010-12-14 Infineon Technologies Ag Semiconductor device
JP5257096B2 (ja) * 2009-01-23 2013-08-07 サンケン電気株式会社 半導体装置
DE102010042168A1 (de) 2010-10-07 2012-04-12 Robert Bosch Gmbh Elektronische Baugruppe sowie Verfahren zu deren Herstellung
DE102012209034A1 (de) * 2012-05-30 2013-12-05 Robert Bosch Gmbh Elektronikmodul sowie Verfahren zur Herstellung eines solchen Elektronikmoduls, sowie elektronisches Steuergerät mit einem solchen Elektronikmodul
JP6258635B2 (ja) * 2013-07-31 2018-01-10 京セラ株式会社 回路基板および電子装置
JP5791670B2 (ja) * 2013-08-02 2015-10-07 株式会社日立製作所 電力変換装置
US20150075849A1 (en) * 2013-09-17 2015-03-19 Jia Lin Yap Semiconductor device and lead frame with interposer
EP3659177B1 (en) 2017-08-25 2023-10-25 Huawei Technologies Co., Ltd. Semiconductor module and method for manufacturing the same
JP2020004784A (ja) * 2018-06-26 2020-01-09 三菱電機株式会社 パワーモジュールおよび電力変換装置
US11469163B2 (en) 2019-08-02 2022-10-11 Semiconductor Components Industries, Llc Low stress asymmetric dual side module

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR910001419B1 (ko) * 1987-03-31 1991-03-05 가부시키가이샤 도시바 수지봉합형 집적회로장치
US4862322A (en) * 1988-05-02 1989-08-29 Bickford Harry R Double electronic device structure having beam leads solderlessly bonded between contact locations on each device and projecting outwardly from therebetween
JPH0671062B2 (ja) * 1989-08-30 1994-09-07 株式会社東芝 樹脂封止型半導体装置

Also Published As

Publication number Publication date
JP2829188B2 (ja) 1998-11-25
KR930022528A (ko) 1993-11-24
JPH05304247A (ja) 1993-11-16
US5332921A (en) 1994-07-26

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