KR930004676A - 자동 수도전과 자동 호스 - Google Patents

자동 수도전과 자동 호스 Download PDF

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Publication number
KR930004676A
KR930004676A KR1019910013542A KR910013542A KR930004676A KR 930004676 A KR930004676 A KR 930004676A KR 1019910013542 A KR1019910013542 A KR 1019910013542A KR 910013542 A KR910013542 A KR 910013542A KR 930004676 A KR930004676 A KR 930004676A
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KR
South Korea
Prior art keywords
auto
faucet
hose
horizontal
tube
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KR1019910013542A
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English (en)
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KR950004837B1 (ko
Inventor
박연수
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박연수
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Application filed by 박연수 filed Critical 박연수
Publication of KR930004676A publication Critical patent/KR930004676A/ko
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Publication of KR950004837B1 publication Critical patent/KR950004837B1/ko

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
    • H10B10/125—Static random access memory [SRAM] devices comprising a MOSFET load element the MOSFET being a thin film transistor [TFT]
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
    • F16L—PIPES; JOINTS OR FITTINGS FOR PIPES; SUPPORTS FOR PIPES, CABLES OR PROTECTIVE TUBING; MEANS FOR THERMAL INSULATION IN GENERAL
    • F16L53/00—Heating of pipes or pipe systems; Cooling of pipes or pipe systems
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Pipe Accessories (AREA)

Abstract

내용 없음.

Description

자동 수도전과 자동 호스
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 사시도,
제2도는 본 발명의 종단면도, 및 횡단면도,
제3도는 본 발명의 작용원리도.

Claims (1)

  1. 몸통(1)에 형성된 수평관(2)에 자루(4)가 있는 밸브(3)를 삽입하고 바킹(5)과 토수관 볼트(6)를 나합하며, 수직관(10)의 수평판(11)위나 관형볼트(12)가 나결된 위에 바킹(5′)를 결합하고 호수를 연결하며, 몸통(1) 내부에 온냉수조절코크(16)가 내장 결합된 수도전이나, 밸브(3)(3′)가 있는 수평관(2) 및 수직관(10)이 입수관(32)과, 수도전, 또는 호스(14)가 연결된 수평관(11)이 있는 몸통(11)으로 구설된 자동호수.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019910015342A 1990-09-05 1991-08-04 반도체장치의 제조방법 KR950004837B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2236354A JP2599495B2 (ja) 1990-09-05 1990-09-05 半導体装置の製造方法
JP90-236354 1990-09-05

Publications (2)

Publication Number Publication Date
KR930004676A true KR930004676A (ko) 1993-03-23
KR950004837B1 KR950004837B1 (ko) 1995-05-13

Family

ID=16999562

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910015342A KR950004837B1 (ko) 1990-09-05 1991-08-04 반도체장치의 제조방법

Country Status (5)

Country Link
US (1) US5179033A (ko)
EP (1) EP0475688B1 (ko)
JP (1) JP2599495B2 (ko)
KR (1) KR950004837B1 (ko)
DE (1) DE69105674T2 (ko)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69211329T2 (de) * 1992-03-27 1996-11-28 Ibm Verfahren zum Herstellen von pseudo-planaren Dünnschicht PFET-Anordnungen und hierdurch erzeugte Struktur
US5330929A (en) * 1992-10-05 1994-07-19 Motorola, Inc. Method of making a six transistor static random access memory cell
JPH06140631A (ja) * 1992-10-28 1994-05-20 Ryoden Semiconductor Syst Eng Kk 電界効果型薄膜トランジスタおよびその製造方法
KR100305123B1 (ko) * 1992-12-11 2001-11-22 비센트 비.인그라시아, 알크 엠 아헨 정적랜덤액세스메모리셀및이를포함하는반도체장치
US5377139A (en) * 1992-12-11 1994-12-27 Motorola, Inc. Process forming an integrated circuit
JP2518133B2 (ja) * 1993-02-12 1996-07-24 日本電気株式会社 スタティック型半導体記憶装置
US5650655A (en) * 1994-04-28 1997-07-22 Micron Technology, Inc. Integrated circuitry having electrical interconnects
JP2796249B2 (ja) * 1993-07-02 1998-09-10 現代電子産業株式会社 半導体記憶装置の製造方法
JP2689888B2 (ja) * 1993-12-30 1997-12-10 日本電気株式会社 半導体装置及びその製造方法
US5426324A (en) * 1994-08-11 1995-06-20 International Business Machines Corporation High capacitance multi-level storage node for high density TFT load SRAMs with low soft error rates
US5624863A (en) * 1995-07-17 1997-04-29 Micron Technology, Inc. Semiconductor processing method of forming complementary N-type doped and P-type doped active regions within a semiconductor substrate
US5599729A (en) * 1995-09-14 1997-02-04 Lg Semicon Co., Ltd. Static random access memory cell and method of fabricating the same
US5622884A (en) * 1996-05-30 1997-04-22 Winbond Electronics Corp. Method for manufacturing a semiconductor memory cell and a polysilicon load resistor of the semiconductor memory cell
EP0821412B1 (en) * 1996-06-17 2006-09-13 United Microelectronics Corporation Hemispherical-grained silicon top-gate electrode for improved soft-error immunity in SRAMs
US5721167A (en) * 1997-02-10 1998-02-24 Motorola, Inc. Process for forming a semiconductor device and a static-random-access memory cell
US6069050A (en) * 1997-10-20 2000-05-30 Taiwan Semiconductor Manufacturing Company Cross-coupled capacitors for improved voltage coefficient
KR100268895B1 (ko) 1997-12-27 2000-10-16 김영환 박막트랜지스터 및 이의 제조방법
US6197629B1 (en) * 1998-11-19 2001-03-06 United Microelectronics Corp. Method of fabricating a polysilicon-based load circuit for static random-access memory
US7679979B1 (en) * 2008-08-30 2010-03-16 Fronteon Inc High speed SRAM
US7542331B1 (en) * 2007-10-16 2009-06-02 Juhan Kim Planar SRAM including segment read circuit

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR940002772B1 (ko) * 1984-08-31 1994-04-02 가부시기가이샤 히다찌세이사꾸쇼 반도체 집적회로 장치 및 그 제조방법
DE3671124D1 (de) * 1985-02-13 1990-06-13 Toshiba Kawasaki Kk Halbleiterspeicherzelle.
JPS61214555A (ja) * 1985-03-20 1986-09-24 Hitachi Ltd 半導体装置
JPH0685431B2 (ja) * 1985-06-10 1994-10-26 株式会社日立製作所 半導体装置
US4774203A (en) * 1985-10-25 1988-09-27 Hitachi, Ltd. Method for making static random-access memory device
JP2550119B2 (ja) * 1987-12-23 1996-11-06 株式会社日立製作所 半導体記憶装置
JPH01272148A (ja) * 1988-04-25 1989-10-31 Nec Corp 半導体記憶装置
JP2805765B2 (ja) * 1988-09-13 1998-09-30 ソニー株式会社 半導体メモリ装置
JPH0294471A (ja) * 1988-09-30 1990-04-05 Toshiba Corp 半導体記憶装置およびその製造方法
JPH0831534B2 (ja) * 1989-11-24 1996-03-27 シャープ株式会社 半導体記憶装置及びその製造方法

Also Published As

Publication number Publication date
KR950004837B1 (ko) 1995-05-13
DE69105674T2 (de) 1995-06-01
US5179033A (en) 1993-01-12
DE69105674D1 (de) 1995-01-19
EP0475688A2 (en) 1992-03-18
JP2599495B2 (ja) 1997-04-09
JPH04115564A (ja) 1992-04-16
EP0475688B1 (en) 1994-12-07
EP0475688A3 (en) 1992-04-01

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