KR890003016A - 집적회로 패드의 접촉방법 및 그 구조 - Google Patents
집적회로 패드의 접촉방법 및 그 구조 Download PDFInfo
- Publication number
- KR890003016A KR890003016A KR1019880008598A KR880008598A KR890003016A KR 890003016 A KR890003016 A KR 890003016A KR 1019880008598 A KR1019880008598 A KR 1019880008598A KR 880008598 A KR880008598 A KR 880008598A KR 890003016 A KR890003016 A KR 890003016A
- Authority
- KR
- South Korea
- Prior art keywords
- aluminum
- layer
- contact
- pad
- integrated circuit
- Prior art date
Links
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 9
- 229910052782 aluminium Inorganic materials 0.000 claims 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 6
- 239000000853 adhesive Substances 0.000 claims 3
- 230000001070 adhesive effect Effects 0.000 claims 3
- 239000000463 material Substances 0.000 claims 3
- 229920005591 polysilicon Polymers 0.000 claims 2
- 239000004820 Pressure-sensitive adhesive Substances 0.000 claims 1
- 239000004020 conductor Substances 0.000 claims 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53271—Conductive materials containing semiconductor material, e.g. polysilicon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/5328—Conductive materials containing conductive organic materials or pastes, e.g. conductive adhesives, inks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01015—Phosphorus [P]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01057—Lanthanum [La]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01327—Intermediate phases, i.e. intermetallics compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Wire Bonding (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 3A도 및 제 3B도는 본 발명에 따른 접촉 구조의 단면도 및 평면도이고, 여기서 제 3A도는 제 3B도의 IIIA-IIIA선에 따른 단면도. 제 4 도는 본 발명에 따른 접촉 구조와 결합되는 돌출부의 단면도.
Claims (8)
- 다음의 공정들, 즉 알루미늄 패드 아래에서 알루미늄과의 양호한 전기 접촉을 가능하게 하는 물질로 구성된 도전성 하부층을 제공하는 공정과, 하부층 표면의 어떤 부분을 노출시키기 위하여 알루미늄층을 부분적으로 제거시키는 공정과, 하부층과의 접속을 이루는 공정으로 구성되는 것을 특징으로 하는 집적회로의 알루미늄 패드의 접촉 방법.
- 제 1 항에 있어서, 상기 하부층이 도우핑된 다결성 실리콘 하부층임을 특징으로 하는 접촉 방법.
- 제 2 항에 있어서, 다결정 실리콘층의 노출된 표면과의 접속은 소량의 도전성 점착제를 사용함으로써 이루어짐을 특징으로 하는 접촉 방법.
- 다음과 같은 공정, 즉 알루미늄핀 아래에 도전성 다결정 실리콘층을 제공하는 공정과, 다결성 실리콘층 표면의 어떤 부분을 노출시키기 위하여 알루미늄층을 부분적으로 제거시키는 공정과 소량의 도전성 점착제에 의하여 다결정 실리콘층과의 접속을 이루는 공정으로 구성됨을 특징으로 하는 집적회로의 알루미늄핀 위에 돌촐 접점을 형성하는 방법.
- 집적회로와 접속되는 확장부(25)를 포함하는 알루미늄층(21,26)으로 최소한 부분적으로나마 덮인 알루미늄(20)과 양호한 전기접촉을 보장하는 한계가 설정된 물질층으로 구성됨을 특징으로 하는 집적회로의 접촉패드.
- 제 5 항에 있어서, 상기 물질이 도핑된 다결정 실리콘으로 구성됨을 특징으로 하는 접촉 패트.
- 제 5 항에 있어서, 상기 패드가 소량의 도전성 점착제(30)로 덮혀있는 것을 특징으로 하는 접촉 패드.
- 제 7 항에 있어서, 상기 소량의 점착제(30)가 또한 외부전기도체(31)와의 전기적 및 기계적 접속을 가능하게 하는 것을 특징으로 하는 접촉 패드.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR87/10413 | 1987-07-16 | ||
FR8710413A FR2618254B1 (fr) | 1987-07-16 | 1987-07-16 | Procede et structure de prise de contact sur des plots de circuit integre. |
Publications (1)
Publication Number | Publication Date |
---|---|
KR890003016A true KR890003016A (ko) | 1989-04-12 |
Family
ID=9353453
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019880008598A KR890003016A (ko) | 1987-07-16 | 1988-07-11 | 집적회로 패드의 접촉방법 및 그 구조 |
Country Status (6)
Country | Link |
---|---|
US (1) | US4914057A (ko) |
EP (1) | EP0299894B1 (ko) |
JP (1) | JP2622156B2 (ko) |
KR (1) | KR890003016A (ko) |
DE (1) | DE3875174T2 (ko) |
FR (1) | FR2618254B1 (ko) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5310699A (en) * | 1984-08-28 | 1994-05-10 | Sharp Kabushiki Kaisha | Method of manufacturing a bump electrode |
US5611140A (en) * | 1989-12-18 | 1997-03-18 | Epoxy Technology, Inc. | Method of forming electrically conductive polymer interconnects on electrical substrates |
US5074947A (en) * | 1989-12-18 | 1991-12-24 | Epoxy Technology, Inc. | Flip chip technology using electrically conductive polymers and dielectrics |
JP2843658B2 (ja) * | 1990-08-02 | 1999-01-06 | 東レ・ダウコーニング・シリコーン株式会社 | フリップチップ型半導体装置 |
WO1994018701A1 (en) * | 1993-02-05 | 1994-08-18 | W.L. Gore & Associates, Inc. | Stress-resistant semiconductor chip-circuit board interconnect |
US5543585A (en) * | 1994-02-02 | 1996-08-06 | International Business Machines Corporation | Direct chip attachment (DCA) with electrically conductive adhesives |
US5581445A (en) * | 1994-02-14 | 1996-12-03 | Us3, Inc. | Plastic integrated circuit card with reinforcement structure for protecting integrated circuit module |
DE69628018D1 (de) * | 1996-10-30 | 2003-06-12 | St Microelectronics Sa | Halbleiterpackung mit mechanisch und elektrisch verbundenen Trägerelementen |
US6137063A (en) | 1998-02-27 | 2000-10-24 | Micron Technology, Inc. | Electrical interconnections |
JP3514314B2 (ja) * | 2001-07-25 | 2004-03-31 | ローム株式会社 | 半導体装置およびその製造方法 |
US7759803B2 (en) * | 2001-07-25 | 2010-07-20 | Rohm Co., Ltd. | Semiconductor device and method of manufacturing the same |
CA2548694C (en) * | 2005-08-31 | 2012-07-24 | Extreme Engineering Ltd. | Fluid erosion protection washer for rotating shaft in mwd tool |
JP2008277525A (ja) * | 2007-04-27 | 2008-11-13 | Shinko Electric Ind Co Ltd | ピン付き基板並びに配線基板および半導体装置 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3667008A (en) * | 1970-10-29 | 1972-05-30 | Rca Corp | Semiconductor device employing two-metal contact and polycrystalline isolation means |
US3806361A (en) * | 1972-01-24 | 1974-04-23 | Motorola Inc | Method of making electrical contacts for and passivating a semiconductor device |
JPS5279773A (en) * | 1975-12-26 | 1977-07-05 | Seiko Epson Corp | Bonding method of ic |
JPS53101267A (en) * | 1977-02-16 | 1978-09-04 | Hitachi Ltd | Semiconductor device |
FR2492164B1 (fr) * | 1980-10-15 | 1987-01-23 | Radiotechnique Compelec | Procede de realisation simultanee de liaisons electriques multiples, notamment pour le raccordement electrique d'une micro-plaquette de semiconducteurs |
NL8202597A (nl) * | 1982-06-28 | 1984-01-16 | Philips Nv | Werkwijze voor het bevestigen van twee voorwerpen aan elkaar. |
JPS60116157A (ja) * | 1983-11-29 | 1985-06-22 | Matsushita Electric Ind Co Ltd | 半導体装置 |
US4666737A (en) * | 1986-02-11 | 1987-05-19 | Harris Corporation | Via metallization using metal fillets |
-
1987
- 1987-07-16 FR FR8710413A patent/FR2618254B1/fr not_active Expired - Fee Related
-
1988
- 1988-07-11 KR KR1019880008598A patent/KR890003016A/ko not_active Application Discontinuation
- 1988-07-13 DE DE8888420246T patent/DE3875174T2/de not_active Expired - Fee Related
- 1988-07-13 EP EP88420246A patent/EP0299894B1/fr not_active Expired - Lifetime
- 1988-07-15 JP JP63175285A patent/JP2622156B2/ja not_active Expired - Lifetime
- 1988-07-15 US US07/323,604 patent/US4914057A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0299894A1 (fr) | 1989-01-18 |
US4914057A (en) | 1990-04-03 |
DE3875174D1 (de) | 1992-11-12 |
EP0299894B1 (fr) | 1992-10-07 |
JPS6450446A (en) | 1989-02-27 |
JP2622156B2 (ja) | 1997-06-18 |
DE3875174T2 (de) | 1993-05-06 |
FR2618254B1 (fr) | 1990-01-05 |
FR2618254A1 (fr) | 1989-01-20 |
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Legal Events
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WITN | Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid |