KR920013258A - 자기성 전기저항 센서 - Google Patents

자기성 전기저항 센서 Download PDF

Info

Publication number
KR920013258A
KR920013258A KR1019910019942A KR910019942A KR920013258A KR 920013258 A KR920013258 A KR 920013258A KR 1019910019942 A KR1019910019942 A KR 1019910019942A KR 910019942 A KR910019942 A KR 910019942A KR 920013258 A KR920013258 A KR 920013258A
Authority
KR
South Korea
Prior art keywords
layer
ferromagnetic material
magnetic
magnetic resistance
resistance sensor
Prior art date
Application number
KR1019910019942A
Other languages
English (en)
Other versions
KR960015920B1 (en
Inventor
다이니 버나드
앨빈 거네이 브루스
유진 램버트 스티븐
마우리 다니엘레
스티븐 팝워쓰 파킨 스튜어트
사이먼 스페리오스 버질
리챠드 윌호이트 데니스
Original Assignee
죤 디. 크래인
인터내셔널 비니네스 머신즈 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 죤 디. 크래인, 인터내셔널 비니네스 머신즈 코포레이션 filed Critical 죤 디. 크래인
Publication of KR920013258A publication Critical patent/KR920013258A/ko
Application granted granted Critical
Publication of KR960015920B1 publication Critical patent/KR960015920B1/ko

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127Structure or manufacture of heads, e.g. inductive
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00Arrangements or instruments for measuring magnetic variables
    • G01R33/02Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09Magnetoresistive devices
    • G01R33/093Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00Arrangements or instruments for measuring magnetic variables
    • G01R33/02Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09Magnetoresistive devices
    • G01R33/096Magnetoresistive devices anisotropic magnetoresistance sensors
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127Structure or manufacture of heads, e.g. inductive
    • G11B5/33Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B2005/0002Special dispositions or recording techniques
    • G11B2005/0005Arrangements, methods or circuits
    • G11B2005/001Controlling recording characteristics of record carriers or transducing characteristics of transducers by means not being part of their structure
    • G11B2005/0013Controlling recording characteristics of record carriers or transducing characteristics of transducers by means not being part of their structure of transducers, e.g. linearisation, equalisation
    • G11B2005/0016Controlling recording characteristics of record carriers or transducing characteristics of transducers by means not being part of their structure of transducers, e.g. linearisation, equalisation of magnetoresistive transducers
    • G11B2005/0018Controlling recording characteristics of record carriers or transducing characteristics of transducers by means not being part of their structure of transducers, e.g. linearisation, equalisation of magnetoresistive transducers by current biasing control or regulation
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127Structure or manufacture of heads, e.g. inductive
    • G11B5/33Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B2005/3996Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Measuring Magnetic Variables (AREA)
  • Hall/Mr Elements (AREA)
  • Magnetic Heads (AREA)

Abstract

내용 없음

Description

자기성 전기저항 센서
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제3도는 본 발명에 따른 자기성 전기저항 센서의 특수한 실시예의 확대된 투지 개략도, 제4도는 본 발명에 따른 자기성 전기저항 센서의 대안의 실시예의 확대된 투시 개략도, 제5도는 본 발명에 따른 자기성 전기저항 센서의 또 다른 실시예의 단면도.

Claims (17)

  1. 강자성 재료의 제1박막 층의 자화 방향이 제로가 인가된 필드에서 강자성 재료의 제2박막 층의 자화 방향에 실제로 수직하며, 비-자기 금속 재료의 박막 층에 의해 분리된 강자성 재료의 상기 제1 및 제2박막 층과, 자기성 전기저항 센서를 통해 전류 흐름을 발생시키는 수단 및, 감지되어진 자계의 함수로서 강자성 재료의 상기 층의 자화의 회전의 차이로 인해 상기 자기성 전기저항 센서의 저항도의 변화를 감지하는 수단을 포함하는 것을 특징으로 하는 자기성 전기저항 센서.
  2. 강자성 재료의 제1박막 층의 자화 방향이 제로가 인가된 필드에서 강자성 재료의 제2박막 층의 자화 방향에 실제로 수직하며, 비-자기 금속 재료의 박막 층에 의해 분리된 강자성 재료의 상기 제1 및 제2박막 층과, 강자성 재료의 상기 제2층의 자화방향을 고정시키는 수단과, 상기 자기성 전기저항 센서를 통해 전류 흐름을 발생시키는 수단 및, 감지되어진 자계의 함수로서 강자성 재료의 상기 제1층의 자화의 회전으로 인해 상기 자기성 전기저항 센서의 저항도의 변화를 감지하는 수단을 포함하는 것을 특징으로 하는 자기성 전기저항 센서.
  3. 제2항에 있어서, 강자성 재료의 상기 제2층의 자화 방향을 고정시키는 상기 수단이 강자성 재료의 상기 제1층의 보자도 보다 실제로 더 높은 보자도를 가진 강자성 재료의 상기 제2층을 제공하는 수단을 포함하는 것을 특징으로 하는 자기성 전기저항 센서.
  4. 제2항에 있어서, 강자성 재료의 상기 제2층의 자화 방향을 고정시키는 상기 수단이 강자성 재료의 상기 제2층과 직접 접촉하는 반강자성 재료의 박막 층을 포함하는 것을 특징으로 하는 자기성 전기저항 센서.
  5. 제2항에 있어서, 강자성 재료의 상기 제2층의 자화 방향을 고정시키는 수단이 강자성 재료의 상기 제2층과 직접 접촉하는자화 곤란 강자성 재료의 박막 층을 포함하는 것을 특징으로 하는 자기성 전기저항 센서.
  6. 제1항에 있어서, 강자성 재료의 상기 제1층이 약 50내지 약 150옹스트롬 범위내의 두께를 갖는 것을 특징으로 하는 자기성 전기저항 센서.
  7. 제2항에 있어서, 강자성 재료의 상기 제1층이 약 50내지 약 150옹스트롬 범위내의 두께를 갖는 것을 특징으로 하는 자기성 전기저항 센서.
  8. 제1항에 있어서, 비-자기 재료의 상기 층이 약 16내지 약 40옹스트롬 범위내의 두께를 갖는 것을 특징으로 하는 자기성 전기저항 센서.
  9. 제2항에 있어서, 비-자기 재료의 상기 층이 약 16내지 약 40옹스트롬 범위내의 두께를 갖는 것을 특징으로 하는 자기성 전기저항 센서.
  10. 제1항에 있어서, 강자성 재료의 상기 제1층의 자화방향은, 비등방성 자기성 전기 저항이 강자성 재료의 상기 층의 자화의 회전으로 인해 상기 자기성 전기저항 센서의 상기 저항의 변화에 부가되도록, 상기 전류 흐름의 방향에 대해 설정되는 것을 특징으로 하는 자기성 전기저항 센서.
  11. 제2항에 있어서, 강자성 재료의 상기 제1층의 자화방향은, 비등방성 자기성 전기 저항이 강자성 재료의 상기 층의 자화의 회전으로 인해 상기 자기성 전기저항 센서의 상기 저항의 변화에 부가되도록, 상기 전류 흐름의 방향에 대해 설정되는 것을 특징으로 하는 자기성 전기저항 센서.
  12. 제1항에 있어서, 강자성 재료의 상기 제1층을 단일 자기구역 상태로 유지하기 충분한 세로방향 바이어스를 발생시키는 수단을 또한 포함하는 것을 특징으로 하는 자기성 전기저항 센서.
  13. 제12항에 있어서, 세로방향 바이어스를 발생시키는 상기 수단이 강자성 재료의 상기 제1층의 단부 영역과 직접 접촉하는 반강자성 재료의 층을 포함하는 것을 특징으로 하는 자기성 전기저항 센서.
  14. 제12항에 있어서, 세로방향 바이어스를 발생시키는 상기 수단이 강자성 재료의 상기 제1층의 단부 영역에 대해서만 직접 접촉하는 자화 곤란 강자성 재료의 층을 포함하는 것을 특징으로 하는 자기성 전기저항 센서.
  15. 제2항에 있어서, 강자성 재료의 상기 제1층을 단일 자기구역 상태로 유지하기에 충분한 세로방향 바이어스를 발생시키는 수단을 또한 포함하는 것을 특징으로 하는 자기성 전기저항 센서.
  16. 제15항에 있어서, 세로방향 바이어스를 발생시키는 상기 수단이 강자성 재료의 상기 제1층의 단부 영역에 대해서만 직접 접촉하는 반강자성 재료의 층을 포함하는 것을 특징으로 하는 자기성 전기저항 센서.
  17. 제15항에 있어서, 세로방향 바이어스를 발생시키는 상기 수단이 강자성 재료의 상기 제1층의 단부 영역에 대해서만 직접 접촉하는 자화 곤란 강자성 재료의 층을 포함하는 것을 특징으로 하는 자기성 전기저항 센서.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR91019942A 1990-12-11 1991-11-11 Magnetoresistive sensor KR960015920B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US625,343 1984-06-27
US07/625,343 US5206590A (en) 1990-12-11 1990-12-11 Magnetoresistive sensor based on the spin valve effect

Publications (2)

Publication Number Publication Date
KR920013258A true KR920013258A (ko) 1992-07-28
KR960015920B1 KR960015920B1 (en) 1996-11-23

Family

ID=24505628

Family Applications (1)

Application Number Title Priority Date Filing Date
KR91019942A KR960015920B1 (en) 1990-12-11 1991-11-11 Magnetoresistive sensor

Country Status (9)

Country Link
US (1) US5206590A (ko)
EP (1) EP0490608B1 (ko)
JP (1) JPH0821166B2 (ko)
KR (1) KR960015920B1 (ko)
CN (1) CN1022142C (ko)
CA (1) CA2054580C (ko)
DE (1) DE69132027T2 (ko)
MY (1) MY107672A (ko)
SG (1) SG42305A1 (ko)

Families Citing this family (387)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3088478B2 (ja) * 1990-05-21 2000-09-18 財団法人生産開発科学研究所 磁気抵抗効果素子
US5390061A (en) * 1990-06-08 1995-02-14 Hitachi, Ltd. Multilayer magnetoresistance effect-type magnetic head
JP3483895B2 (ja) * 1990-11-01 2004-01-06 株式会社東芝 磁気抵抗効果膜
MY108176A (en) * 1991-02-08 1996-08-30 Hitachi Global Storage Tech Netherlands B V Magnetoresistive sensor based on oscillations in the magnetoresistance
US5159513A (en) * 1991-02-08 1992-10-27 International Business Machines Corporation Magnetoresistive sensor based on the spin valve effect
JPH04285713A (ja) * 1991-03-14 1992-10-09 Hitachi Ltd 磁気抵抗効果型磁気ヘッドおよびその製造方法
EP0506433B2 (en) * 1991-03-29 2007-08-01 Kabushiki Kaisha Toshiba Magnetoresistance effect element
US5808843A (en) * 1991-05-31 1998-09-15 Hitachi, Ltd. Magnetoresistance effect reproduction head
US5341261A (en) * 1991-08-26 1994-08-23 International Business Machines Corporation Magnetoresistive sensor having multilayer thin film structure
JP2812826B2 (ja) * 1991-09-04 1998-10-22 株式会社日立製作所 磁気抵抗効果型磁気ヘッドおよびその製造方法
US5304975A (en) * 1991-10-23 1994-04-19 Kabushiki Kaisha Toshiba Magnetoresistance effect element and magnetoresistance effect sensor
US5633092A (en) * 1991-12-10 1997-05-27 British Technology Group Ltd. Magnetostrictive material
FR2685489B1 (fr) * 1991-12-23 1994-08-05 Thomson Csf Capteur de champ magnetique faible a effet magnetoresistif.
JP3022023B2 (ja) * 1992-04-13 2000-03-15 株式会社日立製作所 磁気記録再生装置
US5323285A (en) * 1992-06-23 1994-06-21 Eastman Kodak Company Shielded dual element magnetoresistive reproduce head exhibiting high density signal amplification
JPH06220609A (ja) * 1992-07-31 1994-08-09 Sony Corp 磁気抵抗効果膜及びその製造方法並びにそれを用いた磁気抵抗効果素子、磁気抵抗効果型磁気ヘッド
JP3381957B2 (ja) * 1992-08-03 2003-03-04 株式会社東芝 磁気抵抗効果素子、磁気ヘッドおよび磁気センサ
US5500633A (en) * 1992-08-03 1996-03-19 Kabushiki Kaisha Toshiba Magnetoresistance effect element
US5682284A (en) * 1992-08-25 1997-10-28 Seagate Technology, Inc. Read sensitivity function for barberpole bias design magnetoresistive sensor having curved current contacts
EP0896324B1 (en) * 1992-08-25 2002-11-27 Seagate Technology LLC A magnetoresistive sensor and method of making the same
JP2725977B2 (ja) * 1992-08-28 1998-03-11 インターナショナル・ビジネス・マシーンズ・コーポレイション 磁気抵抗センサ及びその製造方法、磁気記憶システム
DE4232244C2 (de) * 1992-09-25 1998-05-14 Siemens Ag Magnetowiderstands-Sensor
EP0594243A3 (en) * 1992-10-19 1994-09-21 Philips Electronics Nv Magnetic field sensor
US5931032A (en) 1998-04-16 1999-08-03 Gregory; Edwin H. Cutter and blow resistant lock
US5549978A (en) * 1992-10-30 1996-08-27 Kabushiki Kaisha Toshiba Magnetoresistance effect element
US5780176A (en) * 1992-10-30 1998-07-14 Kabushiki Kaisha Toshiba Magnetoresistance effect element
US5373238A (en) * 1992-11-06 1994-12-13 International Business Machines Corporation Four layer magnetoresistance device and method for making a four layer magnetoresistance device
US5287238A (en) * 1992-11-06 1994-02-15 International Business Machines Corporation Dual spin valve magnetoresistive sensor
MY108956A (en) 1992-11-12 1996-11-30 Quantum Peripherals Colorado Inc Magnetoresistive device and method having improved barkhausen noise suppression
US5617071A (en) * 1992-11-16 1997-04-01 Nonvolatile Electronics, Incorporated Magnetoresistive structure comprising ferromagnetic thin films and intermediate alloy layer having magnetic concentrator and shielding permeable masses
US5569544A (en) * 1992-11-16 1996-10-29 Nonvolatile Electronics, Incorporated Magnetoresistive structure comprising ferromagnetic thin films and intermediate layers of less than 30 angstroms formed of alloys having immiscible components
JPH08503336A (ja) * 1992-11-16 1996-04-09 ノンボラタイル エレクトロニクス,インコーポレイテッド 合金層を有する磁気抵抗性構造
US5301079A (en) * 1992-11-17 1994-04-05 International Business Machines Corporation Current biased magnetoresistive spin valve sensor
KR100225179B1 (ko) * 1992-11-30 1999-10-15 니시무로 타이죠 박막 자기 헤드 및 자기 저항 효과형 헤드
US5432373A (en) * 1992-12-15 1995-07-11 Bell Communications Research, Inc. Magnetic spin transistor
DE4243357A1 (de) * 1992-12-21 1994-06-23 Siemens Ag Magnetowiderstands-Sensor mit verkürzten Meßschichten
DE4401476A1 (de) * 1993-01-20 1994-07-28 Fuji Electric Co Ltd Magneto-resistives Element, magnetisches Induktionselement und solche enthaltender Dünnschicht-Magnetkopf
US5422571A (en) * 1993-02-08 1995-06-06 International Business Machines Corporation Magnetoresistive spin valve sensor having a nonmagnetic back layer
US5585196A (en) * 1993-03-12 1996-12-17 Kabushiki Kaisha Toshiba Magnetoresistance effect element
US5736921A (en) * 1994-03-23 1998-04-07 Sanyo Electric Co., Ltd. Magnetoresistive element
US5585198A (en) * 1993-10-20 1996-12-17 Sanyo Electric Co., Ltd. Magnetorsistance effect element
US5656381A (en) * 1993-03-24 1997-08-12 Sanyo Electric Co., Ltd. Magnetoresistance-effect element
JP2784457B2 (ja) * 1993-06-11 1998-08-06 インターナショナル・ビジネス・マシーンズ・コーポレイション 磁気抵抗センサ装置
SG49605A1 (en) * 1993-06-18 1998-06-15 Ibm Magnetoresistive film method of its fabrication and magnetoresistive sensor
US5966272A (en) * 1993-06-21 1999-10-12 Read-Rite Corporation Magnetoresistive read head having an exchange layer
JP2571347B2 (ja) * 1993-07-19 1997-01-16 インターナショナル・ビジネス・マシーンズ・コーポレイション 磁気抵抗変換器及び磁気記憶システム
US5381125A (en) * 1993-07-20 1995-01-10 At&T Corp. Spinodally decomposed magnetoresistive devices
US5949707A (en) * 1996-09-06 1999-09-07 Nonvolatile Electronics, Incorporated Giant magnetoresistive effect memory cell
WO1995003604A1 (en) * 1993-07-23 1995-02-02 Nonvolatile Electronics, Incorporated Magnetic structure with stratified layers
JPH0766033A (ja) * 1993-08-30 1995-03-10 Mitsubishi Electric Corp 磁気抵抗素子ならびにその磁気抵抗素子を用いた磁性薄膜メモリおよび磁気抵抗センサ
JP2860233B2 (ja) * 1993-09-09 1999-02-24 株式会社日立製作所 巨大磁気抵抗効果型磁気ヘッドおよびそれを用いた磁気記録再生装置
US5475304A (en) * 1993-10-01 1995-12-12 The United States Of America As Represented By The Secretary Of The Navy Magnetoresistive linear displacement sensor, angular displacement sensor, and variable resistor using a moving domain wall
DE69407158T2 (de) * 1993-10-06 1998-05-28 Koninkl Philips Electronics Nv Magnetoresistive anordnung und diese verwendender magnetkopf
US5408377A (en) * 1993-10-15 1995-04-18 International Business Machines Corporation Magnetoresistive sensor with improved ferromagnetic sensing layer and magnetic recording system using the sensor
US5465185A (en) * 1993-10-15 1995-11-07 International Business Machines Corporation Magnetoresistive spin valve sensor with improved pinned ferromagnetic layer and magnetic recording system using the sensor
US5422621A (en) * 1993-10-29 1995-06-06 International Business Machines Corporation Oriented granular giant magnetoresistance sensor
EP0651374A3 (en) * 1993-11-01 1995-09-06 Hewlett Packard Co Planar magnetoresistive head.
US5406433A (en) * 1993-12-01 1995-04-11 Eastman Kodak Company Dual magnetoresistive head for reproducing very narrow track width short wavelength data
US5452163A (en) * 1993-12-23 1995-09-19 International Business Machines Corporation Multilayer magnetoresistive sensor
FR2715507B1 (fr) * 1994-01-25 1996-04-05 Commissariat Energie Atomique Magnétorésistance multicouche polarisée.
US6002553A (en) * 1994-02-28 1999-12-14 The United States Of America As Represented By The United States Department Of Energy Giant magnetoresistive sensor
DE69511145T2 (de) * 1994-03-09 2000-02-03 Eastman Kodak Co Magnetoresistiver Wiedergabekopf mit doppeltem Spin-Ventilelement
US5712751A (en) * 1994-03-17 1998-01-27 Kabushiki Kaisha Toshiba Magnetic sensor and magnetic recording-reproducing head and magnetic recording-reproducing apparatus using same
US5695858A (en) * 1994-03-23 1997-12-09 Sanyo Electric Co., Ltd. Magnetoresistive element
JP2785678B2 (ja) * 1994-03-24 1998-08-13 日本電気株式会社 スピンバルブ膜およびこれを用いた再生ヘッド
KR100368848B1 (ko) * 1994-04-15 2003-04-03 코닌클리케 필립스 일렉트로닉스 엔.브이. 자계센서,이센서를구비하는장치및이센서를제조하는방법
EP0677750A3 (en) * 1994-04-15 1996-04-24 Hewlett Packard Co Giant magnetoresistive sensor with an insulating pinning layer.
US5546253A (en) * 1994-05-06 1996-08-13 Quantum Corporation Digitial output magnetoresistive (DOMR) head and methods associated therewith
US5442508A (en) * 1994-05-25 1995-08-15 Eastman Kodak Company Giant magnetoresistive reproduce head having dual magnetoresistive sensor
US5583725A (en) * 1994-06-15 1996-12-10 International Business Machines Corporation Spin valve magnetoresistive sensor with self-pinned laminated layer and magnetic recording system using the sensor
US5886523A (en) * 1994-06-18 1999-03-23 University Of Sheffield, The Western Bank Magnetic field responsive device having giant magnetoresistive material and method for forming the same
FR2722918B1 (fr) * 1994-07-21 1996-08-30 Commissariat Energie Atomique Capteur a magnetoresistance multicouche autopolarisee
US5528440A (en) 1994-07-26 1996-06-18 International Business Machines Corporation Spin valve magnetoresistive element with longitudinal exchange biasing of end regions abutting the free layer, and magnetic recording system using the element
US5648031A (en) * 1994-07-28 1997-07-15 Custom Plastics Molding, Inc. Method of forming antislip surfaces on thermoformed products
JPH0845029A (ja) * 1994-08-01 1996-02-16 Alps Electric Co Ltd 薄膜磁気ヘッド
JPH0849062A (ja) * 1994-08-04 1996-02-20 Sanyo Electric Co Ltd 磁気抵抗効果膜
US5557491A (en) * 1994-08-18 1996-09-17 International Business Machines Corporation Two terminal single stripe orthogonal MR head having biasing conductor integral with the lead layers
JP2694806B2 (ja) * 1994-08-29 1997-12-24 日本電気株式会社 磁気抵抗効果素子およびその製造方法
US5580602A (en) * 1994-09-01 1996-12-03 International Business Machines Corporation Process for making a thin film magnetic head
US5898546A (en) * 1994-09-08 1999-04-27 Fujitsu Limited Magnetoresistive head and magnetic recording apparatus
US6001430A (en) * 1994-09-08 1999-12-14 Nec Corporation Magnetoresistance effect film and production process thereof
JP2738312B2 (ja) * 1994-09-08 1998-04-08 日本電気株式会社 磁気抵抗効果膜およびその製造方法
JPH0877519A (ja) * 1994-09-08 1996-03-22 Fujitsu Ltd 磁気抵抗効果型トランスジューサ
JPH08130337A (ja) * 1994-09-09 1996-05-21 Sanyo Electric Co Ltd 磁気抵抗素子及びその製造方法
JP3574186B2 (ja) * 1994-09-09 2004-10-06 富士通株式会社 磁気抵抗効果素子
JP3952515B2 (ja) * 1994-09-09 2007-08-01 富士通株式会社 磁気抵抗効果素子、磁気記録装置及び磁気抵抗効果素子の製造方法
US5991125A (en) * 1994-09-16 1999-11-23 Kabushiki Kaisha Toshiba Magnetic head
US5434826A (en) * 1994-09-26 1995-07-18 Read-Rite Corporation Multilayer hard bias films for longitudinal biasing in magnetoresistive transducer
US5561368A (en) * 1994-11-04 1996-10-01 International Business Machines Corporation Bridge circuit magnetic field sensor having spin valve magnetoresistive elements formed on common substrate
US5523898A (en) * 1994-11-08 1996-06-04 International Business Machines Corporation Partial MR sensor bias current during write
US5576914A (en) * 1994-11-14 1996-11-19 Read-Rite Corporation Compact read/write head having biased GMR element
US5588199A (en) * 1994-11-14 1996-12-31 International Business Machines Corporation Lapping process for a single element magnetoresistive head
US5539598A (en) * 1994-12-08 1996-07-23 International Business Machines Corporation Electrostatic protection for a shielded MR sensor
US5749769A (en) * 1994-12-16 1998-05-12 International Business Machines Corporation Lapping process using micro-advancement for optimizing flatness of a magnetic head air bearing surface
US5735036A (en) * 1994-12-16 1998-04-07 International Business Machines Corporation Lapping process for minimizing shorts and element recession at magnetic head air bearing surface
US5603156A (en) * 1994-12-16 1997-02-18 International Business Machines Corporation Lapping process for minimizing shorts and element recession at magnetic head air bearing surface
JPH08180328A (ja) * 1994-12-21 1996-07-12 Fujitsu Ltd スピンバルブ磁気抵抗効果素子及びその製造方法
US5491605A (en) * 1994-12-23 1996-02-13 International Business Machines Corporation Shorted magnetoresistive head elements for electrical overstress and electrostatic discharge protection
US5493467A (en) * 1994-12-27 1996-02-20 International Business Machines Corporation Yoke spin valve MR read head
US5664316A (en) * 1995-01-17 1997-09-09 International Business Machines Corporation Method of manufacturing magnetoresistive read transducer having a contiguous longitudinal bias layer
FR2729790A1 (fr) * 1995-01-24 1996-07-26 Commissariat Energie Atomique Magnetoresistance geante, procede de fabrication et application a un capteur magnetique
JP2748876B2 (ja) * 1995-01-27 1998-05-13 日本電気株式会社 磁気抵抗効果膜
JPH08221719A (ja) * 1995-02-16 1996-08-30 Tdk Corp スピンバルブ磁気抵抗ヘッド及びその製造方法
DE19507303A1 (de) * 1995-03-02 1996-09-05 Siemens Ag Sensoreinrichtung mit einer Brückenschaltung von magnetoresistiven Sensorelementen
US5608593A (en) * 1995-03-09 1997-03-04 Quantum Peripherals Colorado, Inc. Shaped spin valve type magnetoresistive transducer and method for fabricating the same incorporating domain stabilization technique
JPH08287420A (ja) * 1995-04-11 1996-11-01 Hitachi Metals Ltd 磁気抵抗効果膜
US6741494B2 (en) * 1995-04-21 2004-05-25 Mark B. Johnson Magnetoelectronic memory element with inductively coupled write wires
JP3629309B2 (ja) * 1995-09-05 2005-03-16 アルプス電気株式会社 薄膜磁気ヘッド
JP2778626B2 (ja) * 1995-06-02 1998-07-23 日本電気株式会社 磁気抵抗効果膜及びその製造方法並びに磁気抵抗効果素子
US5573809A (en) * 1995-06-05 1996-11-12 Quantum Peripherals Colorado, Inc. Process for forming a magnetoresistive device
US5532892A (en) * 1995-06-05 1996-07-02 Quantum Peripherals Colorado, Inc. Soft adjacent layer biased magnetoresistive device incorporating a natural flux closure design utilizing coplanar permanent magnet thin film stabilization
DE69619166T2 (de) * 1995-06-15 2002-06-20 Tdk Corp Magnetoresistiver Wandler mit "Spin-Valve" Struktur und Herstellungsverfahren
SG46731A1 (en) * 1995-06-30 1998-02-20 Ibm Spin valve magnetoresistive sensor with antiparallel pinned layer and improved exchange bias layer and magnetic recording system using the senor
JP2849354B2 (ja) * 1995-07-28 1999-01-20 ティーディーケイ株式会社 磁気変換素子及び薄膜磁気ヘッド
US5896252A (en) * 1995-08-11 1999-04-20 Fujitsu Limited Multilayer spin valve magneto-resistive effect magnetic head with free magnetic layer including two sublayers and magnetic disk drive including same
US5638237A (en) * 1995-08-25 1997-06-10 International Business Machines Corporation Fusible-link removable shorting of magnetoresistive heads for electrostatic discharge protection
US5701222A (en) * 1995-09-11 1997-12-23 International Business Machines Corporation Spin valve sensor with antiparallel magnetization of pinned layers
JPH0983039A (ja) * 1995-09-14 1997-03-28 Nec Corp 磁気抵抗効果素子
US5768067A (en) 1995-09-19 1998-06-16 Alps Electric Co., Ltd. Magnetoresistive head using exchange anisotropic magnetic field with an antiferromagnetic layer
JP2746226B2 (ja) * 1995-09-23 1998-05-06 日本電気株式会社 磁気抵抗効果素子を用いた磁界の検出方法
EP0768641A1 (en) * 1995-10-09 1997-04-16 TDK Corporation Manufacturing method of magnetic head apparatus with spin valve effect magnetoresistive head
US5654854A (en) * 1995-11-30 1997-08-05 Quantum Corporation Longitudinally biased magnetoresistive sensor having a concave shaped active region to reduce Barkhausen noise by achieving a substantially single magnetic domain state
KR100201681B1 (ko) * 1996-01-03 1999-06-15 포만 제프리 엘 직교 자기저항 센서와 자기 저장 시스템 및 직교 자기저항 센서 제조 방법
US5969896A (en) * 1996-01-08 1999-10-19 Hitachi, Ltd. Magnetic recording/reproducing device with a function of correcting waveform of magnetoresistive-effect head
JPH09205234A (ja) * 1996-01-26 1997-08-05 Nec Corp 磁気抵抗効果素子及び磁気抵抗効果センサ
US6545847B2 (en) 1996-02-14 2003-04-08 Hitachi, Ltd. Magnetoresistive effect head
US5936810A (en) 1996-02-14 1999-08-10 Hitachi, Ltd. Magnetoresistive effect head
US5650887A (en) * 1996-02-26 1997-07-22 International Business Machines Corporation System for resetting sensor magnetization in a spin valve magnetoresistive sensor
DE19612422C2 (de) * 1996-03-28 2000-06-15 Siemens Ag Potentiometereinrichtung mit einem linear verschiebbaren Stellelement und signalerzeugenden Mitteln
JP3388685B2 (ja) * 1996-04-01 2003-03-24 ティーディーケイ株式会社 磁気ヘッド
JP3327375B2 (ja) * 1996-04-26 2002-09-24 富士通株式会社 磁気抵抗効果型トランスデューサ、その製造方法及び磁気記録装置
US5668688A (en) * 1996-05-24 1997-09-16 Quantum Peripherals Colorado, Inc. Current perpendicular-to-the-plane spin valve type magnetoresistive transducer
US6166539A (en) * 1996-10-30 2000-12-26 Regents Of The University Of Minnesota Magnetoresistance sensor having minimal hysteresis problems
US5747997A (en) * 1996-06-05 1998-05-05 Regents Of The University Of Minnesota Spin-valve magnetoresistance sensor having minimal hysteresis problems
US5742459A (en) * 1996-06-20 1998-04-21 Read-Rite Corporation Magnetic head having encapsulated magnetoresistive transducer and multilayered lead structure
US5939134A (en) * 1996-07-10 1999-08-17 International Business Machines Corporation Process for making a thin film magnetic head
US5742162A (en) * 1996-07-17 1998-04-21 Read-Rite Corporation Magnetoresistive spin valve sensor with multilayered keeper
JP2856165B2 (ja) * 1996-08-12 1999-02-10 日本電気株式会社 磁気抵抗効果素子及びその製造方法
US5793279A (en) * 1996-08-26 1998-08-11 Read-Rite Corporation Methods and compositions for optimizing interfacial properties of magnetoresistive sensors
US5966322A (en) * 1996-09-06 1999-10-12 Nonvolatile Electronics, Incorporated Giant magnetoresistive effect memory cell
US5945904A (en) * 1996-09-06 1999-08-31 Ford Motor Company Giant magnetoresistors with high sensitivity and reduced hysteresis and thin layers
US5869963A (en) 1996-09-12 1999-02-09 Alps Electric Co., Ltd. Magnetoresistive sensor and head
US5739988A (en) * 1996-09-18 1998-04-14 International Business Machines Corporation Spin valve sensor with enhanced magnetoresistance
SG72760A1 (en) * 1996-09-19 2000-05-23 Tdk Corp Ferromagnetic tunnel junction magnetoresistive element and magnetic head
JPH1098220A (ja) * 1996-09-20 1998-04-14 Sanyo Electric Co Ltd 磁気抵抗効果素子
JP3291208B2 (ja) 1996-10-07 2002-06-10 アルプス電気株式会社 磁気抵抗効果型センサおよびその製造方法とそのセンサを備えた磁気ヘッド
US5715120A (en) * 1996-10-09 1998-02-03 International Business Machines Corporation Magnetoresistance sensor with enhanced magnetoresistive effect
JP2924819B2 (ja) 1996-10-09 1999-07-26 日本電気株式会社 磁気抵抗効果膜及びその製造方法
JP3593220B2 (ja) * 1996-10-11 2004-11-24 アルプス電気株式会社 磁気抵抗効果多層膜
JP2924825B2 (ja) * 1996-10-31 1999-07-26 日本電気株式会社 磁気抵抗効果素子及びこれを用いた磁気抵抗効果センサ
JP3387934B2 (ja) * 1996-11-20 2003-03-17 株式会社東芝 スパッタリングターゲット
JPH10162320A (ja) * 1996-11-26 1998-06-19 Nec Corp 磁気抵抗効果型ヘッドおよびその使用方法
US5796561A (en) * 1996-11-27 1998-08-18 International Business Machines Corporation Self-biased spin valve sensor
JPH10162322A (ja) 1996-11-28 1998-06-19 Nec Corp 磁気抵抗効果型複合ヘッドおよびその製造方法
JPH10188235A (ja) * 1996-12-26 1998-07-21 Nec Corp 磁気抵抗効果膜及びその製造方法
US6090498A (en) * 1996-12-27 2000-07-18 Tdk Corporation Magnetoresistance effect element and magnetoresistance device
JPH10198927A (ja) * 1997-01-08 1998-07-31 Nec Corp 磁気抵抗効果膜およびその製造方法
JP2937237B2 (ja) * 1997-01-22 1999-08-23 日本電気株式会社 磁気抵抗効果ヘッドおよびその初期化方法
JP3219713B2 (ja) * 1997-02-07 2001-10-15 アルプス電気株式会社 磁気抵抗効果素子の製造方法
DE69819574T2 (de) * 1997-02-14 2004-09-16 Alps Electric Co., Ltd. Rotationsdetektionsvorrichtung für Multirotationskörper
JP3368788B2 (ja) * 1997-02-17 2003-01-20 ティーディーケイ株式会社 スピンバルブ磁気抵抗素子を備えた磁気ヘッドの検査方法及び検査装置
JPH10241124A (ja) * 1997-02-28 1998-09-11 Tdk Corp スピンバルブ磁気抵抗素子の磁気特性制御方法及び該素子を備えた磁気ヘッドの磁気特性制御方法
JP3886589B2 (ja) 1997-03-07 2007-02-28 アルプス電気株式会社 巨大磁気抵抗効果素子センサ
SG75829A1 (en) * 1997-03-14 2000-10-24 Toshiba Kk Magneto-resistance effect element and magnetic head
JP2914339B2 (ja) 1997-03-18 1999-06-28 日本電気株式会社 磁気抵抗効果素子並びにそれを用いた磁気抵抗効果センサ及び磁気抵抗検出システム
JP3334552B2 (ja) * 1997-03-21 2002-10-15 ティーディーケイ株式会社 スピンバルブ磁気抵抗素子を備えた磁気ヘッドの検査方法及び装置
JP2924845B2 (ja) * 1997-03-24 1999-07-26 ティーディーケイ株式会社 スピンバルブ磁気抵抗素子を備えた磁気ヘッド及びその製造方法
JP2933056B2 (ja) * 1997-04-30 1999-08-09 日本電気株式会社 磁気抵抗効果素子並びにこれを用いた磁気抵抗効果センサ、磁気抵抗検出システム及び磁気記憶システム
US6118622A (en) 1997-05-13 2000-09-12 International Business Machines Corporation Technique for robust resetting of spin valve head
US5748399A (en) * 1997-05-13 1998-05-05 International Business Machines Corporation Resettable symmetric spin valve
US5825595A (en) * 1997-05-13 1998-10-20 International Business Machines Corporation Spin valve sensor with two spun values separated by an insulated current conductor
JP2950284B2 (ja) 1997-05-14 1999-09-20 日本電気株式会社 磁気抵抗効果素子、並びにこれを用いた磁気抵抗効果センサ、磁気抵抗検出システム及び磁気記憶システム
JP2970590B2 (ja) 1997-05-14 1999-11-02 日本電気株式会社 磁気抵抗効果素子並びにこれを用いた磁気抵抗効果センサ、磁気抵抗検出システム及び磁気記憶システム
US5871622A (en) * 1997-05-23 1999-02-16 International Business Machines Corporation Method for making a spin valve magnetoresistive sensor
JP3263004B2 (ja) * 1997-06-06 2002-03-04 アルプス電気株式会社 スピンバルブ型薄膜素子
JPH10340430A (ja) 1997-06-10 1998-12-22 Fujitsu Ltd スピンバルブ磁気抵抗効果型ヘッドおよび磁気記憶装置
US5792510A (en) * 1997-06-10 1998-08-11 International Business Machines Corporation Method for making a chemically-ordered magnetic metal alloy film
US5768071A (en) * 1997-06-19 1998-06-16 International Business Machines Corporation Spin valve sensor with improved magnetic stability of the pinned layer
JP2985964B2 (ja) * 1997-06-30 1999-12-06 日本電気株式会社 磁気抵抗効果型ヘッド及びその初期化方法
JP3541245B2 (ja) 1997-07-15 2004-07-07 株式会社日立グローバルストレージテクノロジーズ 磁気ヘッド及びそれを有する磁気記憶装置
US5867351A (en) * 1997-07-25 1999-02-02 International Business Machines Corporation Spin valve read head with low moment, high coercivity pinning layer
WO1999008265A1 (fr) * 1997-08-07 1999-02-18 Tdk Corporation Autocollant adhesif en caoutchouc et feuille autocollante adhesive en caoutchouc fabriquee avec cet adhesif
US5856617A (en) * 1997-09-02 1999-01-05 International Business Machines Corporation Atomic force microscope system with cantilever having unbiased spin valve magnetoresistive strain gauge
US5993566A (en) * 1997-09-03 1999-11-30 International Business Machines Corporation Fabrication process of Ni-Mn spin valve sensor
US6033491A (en) * 1997-09-03 2000-03-07 International Business Machines Corporation Fabrication process of Ni-Mn spin valve sensor
JPH1196519A (ja) * 1997-09-17 1999-04-09 Alps Electric Co Ltd スピンバルブ型薄膜素子およびその製造方法
JP3274392B2 (ja) * 1997-09-17 2002-04-15 アルプス電気株式会社 スピンバルブ型薄膜素子
JPH1196516A (ja) * 1997-09-19 1999-04-09 Fujitsu Ltd スピンバルブ磁気抵抗効果型ヘッドの製造法及びこの製造方法で製造されたスピンバルブ磁気抵抗効果型ヘッド
US6350487B1 (en) 1997-09-24 2002-02-26 Alps Electric Co., Ltd. Spin-valve type thin film element and its manufacturing method
JP2924875B2 (ja) * 1997-10-17 1999-07-26 日本電気株式会社 磁気抵抗効果ヘッド
JP3263016B2 (ja) * 1997-10-20 2002-03-04 アルプス電気株式会社 スピンバルブ型薄膜素子
JP2962415B2 (ja) 1997-10-22 1999-10-12 アルプス電気株式会社 交換結合膜
JP3175922B2 (ja) * 1997-10-24 2001-06-11 アルプス電気株式会社 スピンバルブ型薄膜素子の製造方法
US5898549A (en) * 1997-10-27 1999-04-27 International Business Machines Corporation Anti-parallel-pinned spin valve sensor with minimal pinned layer shunting
JP2001507806A (ja) 1997-10-29 2001-06-12 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ スピン−トンネル接合から成る磁界センサー
US5969523A (en) * 1997-11-14 1999-10-19 International Business Machines Corporation Preamplifier bias mode to re-initialize a GMR head after losing initialization
JPH11161921A (ja) 1997-12-01 1999-06-18 Nec Corp 磁気抵抗効果素子およびその製造方法
US6141191A (en) 1997-12-05 2000-10-31 International Business Machines Corporation Spin valves with enhanced GMR and thermal stability
US6175477B1 (en) 1997-12-05 2001-01-16 International Business Machines Corporation Spin valve sensor with nonmagnetic oxide seed layer
JP3269999B2 (ja) * 1997-12-09 2002-04-02 アルプス電気株式会社 薄膜磁気ヘッドの製造方法
JPH11185224A (ja) 1997-12-24 1999-07-09 Tdk Corp 薄膜磁気ヘッドの製造方法
US5920446A (en) * 1998-01-06 1999-07-06 International Business Machines Corporation Ultra high density GMR sensor
US6072382A (en) * 1998-01-06 2000-06-06 Nonvolatile Electronics, Incorporated Spin dependent tunneling sensor
US6300617B1 (en) 1998-03-04 2001-10-09 Nonvolatile Electronics, Incorporated Magnetic digital signal coupler having selected/reversal directions of magnetization
JP3334599B2 (ja) 1998-03-12 2002-10-15 ティーディーケイ株式会社 磁気抵抗効果素子の磁化方向測定方法及び装置
US6074767A (en) * 1998-03-12 2000-06-13 International Business Machines Corporation Spin valve magnetoresistive head with two sets of ferromagnetic/antiferromagnetic films having high blocking temperatures and fabrication method
JP3790356B2 (ja) * 1998-03-19 2006-06-28 富士通株式会社 Gmrヘッド、gmrヘッドの製造方法及び磁気ディスク駆動装置
US6134090A (en) * 1998-03-20 2000-10-17 Seagate Technology Llc Enhanced spin-valve/GMR magnetic sensor with an insulating boundary layer
JP3456409B2 (ja) 1998-03-23 2003-10-14 Tdk株式会社 薄膜磁気ヘッドの製造方法
JP3755291B2 (ja) 1998-04-02 2006-03-15 Tdk株式会社 薄膜磁気ヘッドの製造方法
JPH11296823A (ja) 1998-04-09 1999-10-29 Nec Corp 磁気抵抗効果素子およびその製造方法、ならびに磁気抵抗効果センサ,磁気記録システム
JP3838469B2 (ja) 1998-04-20 2006-10-25 Tdk株式会社 磁気抵抗素子の磁気特性制御方法、該素子を備えた磁気ヘッドの磁気特性制御方法、該素子を備えた磁気ヘッド装置、及び磁気ディスク装置
US6191926B1 (en) 1998-05-07 2001-02-20 Seagate Technology Llc Spin valve magnetoresistive sensor using permanent magnet biased artificial antiferromagnet layer
US6356420B1 (en) 1998-05-07 2002-03-12 Seagate Technology Llc Storage system having read head utilizing GMR and AMr effects
US6738236B1 (en) 1998-05-07 2004-05-18 Seagate Technology Llc Spin valve/GMR sensor using synthetic antiferromagnetic layer pinned by Mn-alloy having a high blocking temperature
US6127045A (en) * 1998-05-13 2000-10-03 International Business Machines Corporation Magnetic tunnel junction device with optimized ferromagnetic layer
US6063244A (en) * 1998-05-21 2000-05-16 International Business Machines Corporation Dual chamber ion beam sputter deposition system
US6175475B1 (en) 1998-05-27 2001-01-16 International Business Machines Corporation Fully-pinned, flux-closed spin valve
US6086727A (en) 1998-06-05 2000-07-11 International Business Machines Corporation Method and apparatus to improve the properties of ion beam deposited films in an ion beam sputtering system
US6169647B1 (en) 1998-06-11 2001-01-02 Seagate Technology Llc Giant magnetoresistive sensor having weakly pinned ferromagnetic layer
JP2000030223A (ja) 1998-07-08 2000-01-28 Tdk Corp 磁気抵抗効果素子及び薄膜磁気ヘッド
JP2000030226A (ja) 1998-07-14 2000-01-28 Tdk Corp 磁気抵抗効果素子、該素子を備えた薄膜磁気ヘッド、及び該素子の製造方法
JP2000040212A (ja) 1998-07-24 2000-02-08 Alps Electric Co Ltd スピンバルブ型薄膜素子
JP2000057527A (ja) 1998-08-04 2000-02-25 Alps Electric Co Ltd スピンバルブ型薄膜素子
JP2000057538A (ja) * 1998-08-05 2000-02-25 Hitachi Ltd 磁気抵抗センサを用いた磁気ヘッドおよび磁気記録再生装置
JP3521755B2 (ja) 1998-08-11 2004-04-19 Tdk株式会社 磁気抵抗効果素子の磁区制御バイアス磁界測定方法及び装置
US6175476B1 (en) 1998-08-18 2001-01-16 Read-Rite Corporation Synthetic spin-valve device having high resistivity anti parallel coupling layer
JP3799168B2 (ja) 1998-08-20 2006-07-19 株式会社日立グローバルストレージテクノロジーズ 磁気記録再生装置
US6097579A (en) * 1998-08-21 2000-08-01 International Business Machines Corporation Tunnel junction head structure without current shunting
US6052263A (en) * 1998-08-21 2000-04-18 International Business Machines Corporation Low moment/high coercivity pinned layer for magnetic tunnel junction sensors
US6552882B1 (en) 1998-09-01 2003-04-22 Nec Corporation Information reproduction head apparatus and information recording/reproduction system
US6219212B1 (en) 1998-09-08 2001-04-17 International Business Machines Corporation Magnetic tunnel junction head structure with insulating antiferromagnetic layer
JP3235572B2 (ja) 1998-09-18 2001-12-04 日本電気株式会社 磁気抵抗効果素子,磁気抵抗効果センサ及びそれらを利用したシステム
WO2000022612A1 (fr) 1998-10-12 2000-04-20 Fujitsu Limited Capteur magnetique, tete magnetique, codeur magnetique et entrainement de disque dur
JP2000149228A (ja) 1998-11-05 2000-05-30 Tdk Corp 薄膜磁気ヘッドの製造方法
US6664784B1 (en) 1998-11-26 2003-12-16 Nec Corporation Magneto-resistive sensor with ZR base layer and method of fabricating the same
US6542342B1 (en) 1998-11-30 2003-04-01 Nec Corporation Magnetoresistive effect transducer having longitudinal bias layer directly connected to free layer
US6140139A (en) 1998-12-22 2000-10-31 Pageant Technologies, Inc. Hall effect ferromagnetic random access memory device and its method of manufacture
US6418000B1 (en) 1999-01-21 2002-07-09 Read-Rite Corporation Dual, synthetic spin valve sensor using current pinning
US6277505B1 (en) 1999-01-21 2001-08-21 Read-Rite Corporation Read sensor with improved thermal stability and manufacturing method therefor
JP2000215415A (ja) 1999-01-26 2000-08-04 Nec Corp 磁気抵抗効果素子
JP3959881B2 (ja) 1999-02-08 2007-08-15 Tdk株式会社 磁気抵抗効果センサの製造方法
US6469878B1 (en) 1999-02-11 2002-10-22 Seagate Technology Llc Data head and method using a single antiferromagnetic material to pin multiple magnetic layers with differing orientation
WO2000052699A1 (en) * 1999-03-04 2000-09-08 Pageant Technologies (Usa), Inc. Magneto resistor sensor with diode short for a non-volatile random access ferromagnetic memory
US6288929B1 (en) * 1999-03-04 2001-09-11 Pageant Technologies, Inc. Magneto resistor sensor with differential collectors for a non-volatile random access ferromagnetic memory
US6330183B1 (en) 1999-03-04 2001-12-11 Pageant Technologies, Inc. (Micromem Technologies, Inc.) Dual conductor inductive sensor for a non-volatile random access ferromagnetic memory
US6266267B1 (en) * 1999-03-04 2001-07-24 Pageant Technologies, Inc. Single conductor inductive sensor for a non-volatile random access ferromagnetic memory
US6229729B1 (en) 1999-03-04 2001-05-08 Pageant Technologies, Inc. (Micromem Technologies, Inc.) Magneto resistor sensor with diode short for a non-volatile random access ferromagnetic memory
WO2000052698A1 (en) * 1999-03-04 2000-09-08 Pageant Technologies (Usa), Inc. Dual conductor inductive sensor for a non-volatile random access ferromagnetic memory
JP2000293823A (ja) 1999-04-08 2000-10-20 Nec Corp 磁気抵抗効果素子およびその製造方法、磁気抵抗効果ヘッド並びに磁気記録再生装置
US6331773B1 (en) 1999-04-16 2001-12-18 Storage Technology Corporation Pinned synthetic anti-ferromagnet with oxidation protection layer
JP2002542618A (ja) * 1999-04-20 2002-12-10 シーゲイト テクノロジー エルエルシー 自由層の鏡電子散乱によるスピンバルブ・センサ
US6462919B1 (en) 1999-04-28 2002-10-08 Seagate Technology Llc Spin valve sensor with exchange tabs
US6153320A (en) * 1999-05-05 2000-11-28 International Business Machines Corporation Magnetic devices with laminated ferromagnetic structures formed with improved antiferromagnetically coupling films
JP2001028108A (ja) * 1999-05-11 2001-01-30 Nec Corp 磁気抵抗効果ヘッドの製造方法
DE10017374B4 (de) * 1999-05-25 2007-05-10 Siemens Ag Magnetische Koppeleinrichtung und deren Verwendung
JP3575672B2 (ja) 1999-05-26 2004-10-13 Tdk株式会社 磁気抵抗効果膜及び磁気抵抗効果素子
US6913836B1 (en) 1999-06-03 2005-07-05 Alps Electric Co., Ltd. Spin-valve type magnetoresistive sensor and method of manufacturing the same
JP3710324B2 (ja) 1999-06-03 2005-10-26 アルプス電気株式会社 スピンバルブ型薄膜磁気素子及び薄膜磁気ヘッド及びスピンバルブ型薄膜磁気素子の製造方法
US6687098B1 (en) 1999-07-08 2004-02-03 Western Digital (Fremont), Inc. Top spin valve with improved seed layer
US6889555B1 (en) * 1999-07-20 2005-05-10 Fidelica Microsystems, Inc. Magnetoresistive semiconductor pressure sensors and fingerprint identification/verification sensors using same
US6694822B1 (en) 1999-07-20 2004-02-24 Fidelica Microsystems, Inc. Use of multi-layer thin films as stress sensor
JP3272329B2 (ja) 1999-07-26 2002-04-08 アルプス電気株式会社 薄膜磁気ヘッド及び浮上式磁気ヘッド
US6324037B1 (en) 1999-07-26 2001-11-27 Headway Technologies, Inc. Magnetically stable spin-valve sensor
JP3367477B2 (ja) 1999-07-28 2003-01-14 日本電気株式会社 磁気抵抗効果素子、磁気抵抗効果ヘッド及び磁気抵抗検出システム並びに磁気記憶システム
US6219209B1 (en) 1999-07-29 2001-04-17 International Business Machines Corporation Spin valve head with multiple antiparallel coupling layers
JP3793669B2 (ja) 1999-08-26 2006-07-05 株式会社日立グローバルストレージテクノロジーズ 巨大磁気抵抗効果ヘッド、薄膜磁気ヘッドならびに磁気記録再生装置
JP2001067625A (ja) 1999-08-30 2001-03-16 Alps Electric Co Ltd 磁気抵抗効果型素子及びその製造方法
US6788502B1 (en) 1999-09-02 2004-09-07 International Business Machines Corporation Co-Fe supermalloy free layer for magnetic tunnel junction heads
US6259586B1 (en) 1999-09-02 2001-07-10 International Business Machines Corporation Magnetic tunnel junction sensor with AP-coupled free layer
JP2001084530A (ja) 1999-09-16 2001-03-30 Alps Electric Co Ltd 磁気抵抗効果素子及びその製造方法
US6421212B1 (en) 1999-09-21 2002-07-16 Read-Rite Corporation Thin film read head structure with improved bias magnet-to-magnetoresistive element interface and method of fabrication
US6455177B1 (en) * 1999-10-05 2002-09-24 Seagate Technology Llc Stabilization of GMR devices
US6317297B1 (en) 1999-10-06 2001-11-13 Read-Rite Corporation Current pinned dual spin valve with synthetic pinned layers
US6381105B1 (en) 1999-10-22 2002-04-30 Read-Rite Corporation Hybrid dual spin valve sensor and method for making same
US6542341B1 (en) 1999-11-18 2003-04-01 International Business Machines Corporation Magnetic sensors having an antiferromagnetic layer exchange-coupled to a free layer
US6447935B1 (en) 1999-11-23 2002-09-10 Read-Rite Corporation Method and system for reducing assymetry in a spin valve having a synthetic pinned layer
US6613240B2 (en) 1999-12-06 2003-09-02 Epion Corporation Method and apparatus for smoothing thin conductive films by gas cluster ion beam
US6480365B1 (en) 1999-12-09 2002-11-12 International Business Machines Corporation Spin valve transistor using a magnetic tunnel junction
US6783635B2 (en) 1999-12-09 2004-08-31 International Business Machines Corporation Spin valve sensor free layer structure with a cobalt based layer that promotes magnetic stability and high magnetoresistance
JP2001176027A (ja) 1999-12-14 2001-06-29 Nec Corp 磁気抵抗効果ヘッド及びこれを用いた磁気記憶装置
JP3817399B2 (ja) * 1999-12-24 2006-09-06 株式会社日立グローバルストレージテクノロジーズ 磁気抵抗センサー
JP2001229511A (ja) 2000-02-10 2001-08-24 Fujitsu Ltd 磁気抵抗効果膜、磁気抵抗効果型ヘッド、情報再生装置、および磁気抵抗効果膜製造方法
JP2001236612A (ja) 2000-02-17 2001-08-31 Tdk Corp 磁気抵抗センサ、薄膜磁気ヘッド、磁気ヘッド装置及び磁気ディスク装置
WO2001067459A1 (en) * 2000-03-09 2001-09-13 Lienau Richard M Method and apparatus for reading data from a ferromagnetic memory cell
JP2001256620A (ja) 2000-03-13 2001-09-21 Hitachi Ltd 磁気抵抗センサおよびこれを搭載した磁気記録再生装置
US6396668B1 (en) 2000-03-24 2002-05-28 Seagate Technology Llc Planar double spin valve read head
JP2001283413A (ja) * 2000-03-29 2001-10-12 Tdk Corp スピンバルブ膜の製造方法
US6466419B1 (en) 2000-03-31 2002-10-15 Seagate Technology Llc Current perpendicular to plane spin valve head
US6385016B1 (en) 2000-03-31 2002-05-07 Seagate Technology Llc Magnetic read head with an insulator layer between an MR sensor and rear portions of current contacts to provide enhanced sensitivity
US6700760B1 (en) 2000-04-27 2004-03-02 Seagate Technology Llc Tunneling magnetoresistive head in current perpendicular to plane mode
US6496334B1 (en) 2000-05-26 2002-12-17 Read-Rite Corportion Data storage and retrieval apparatus with thin film read head having planarized extra gap and shield layers and method of fabrication thereof
US6473275B1 (en) 2000-06-06 2002-10-29 International Business Machines Corporation Dual hybrid magnetic tunnel junction/giant magnetoresistive sensor
JP3550533B2 (ja) 2000-07-06 2004-08-04 株式会社日立製作所 磁界センサー、磁気ヘッド、磁気記録再生装置及び磁気記憶素子
JP3260741B1 (ja) * 2000-08-04 2002-02-25 ティーディーケイ株式会社 磁気抵抗効果装置およびその製造方法ならびに薄膜磁気ヘッドおよびその製造方法
US6853520B2 (en) 2000-09-05 2005-02-08 Kabushiki Kaisha Toshiba Magnetoresistance effect element
GB2382452A (en) * 2000-09-19 2003-05-28 Seagate Technology Llc Giant magnetoresistive sensor having self-consistent demagnetization fields
AU2002230791A1 (en) * 2000-10-26 2002-05-06 University Of Iowa Research Foundation Unipolar spin diode and transistor and the applications of the same
US6801408B1 (en) 2000-11-02 2004-10-05 Western Digital (Fremont), Inc. Data storage and retrieval apparatus with thin film read head having a planar sensor element and an extra gap and method of fabrication thereof
US6738237B2 (en) 2001-01-04 2004-05-18 Hitachi Global Storage Technologies Netherlands B.V. AP-pinned spin valve design using very thin Pt-Mn AFM layer
US6473279B2 (en) 2001-01-04 2002-10-29 International Business Machines Corporation In-stack single-domain stabilization of free layers for CIP and CPP spin-valve or tunnel-valve read heads
US6794862B2 (en) * 2001-05-08 2004-09-21 Ramot At Tel-Aviv University Ltd. Magnetic thin film sensor based on the extraordinary hall effect
JP3807254B2 (ja) * 2001-05-30 2006-08-09 ソニー株式会社 磁気抵抗効果素子、磁気抵抗効果型磁気センサ、および磁気抵抗効果型磁気ヘッド
JP2002367160A (ja) * 2001-06-05 2002-12-20 Fuji Electric Co Ltd 磁気記録媒体の製造方法および磁気記録媒体
DE10128135A1 (de) * 2001-06-09 2002-12-19 Bosch Gmbh Robert Magnetoresistive Schichtanordnung und Gradiometer mit einer derartigen Schichtanordnung
US20030002232A1 (en) * 2001-06-29 2003-01-02 Storage Technology Corporation Apparatus and method of making a reduced sensitivity spin valve sensor apparatus in which a flux carrying capacity is increased
US20030002231A1 (en) * 2001-06-29 2003-01-02 Dee Richard Henry Reduced sensitivity spin valve head for magnetic tape applications
US6785101B2 (en) 2001-07-12 2004-08-31 Hitachi Global Storage Technologies Netherlands B.V. Overlaid lead giant magnetoresistive head with side reading reduction
JP3955195B2 (ja) 2001-08-24 2007-08-08 株式会社日立グローバルストレージテクノロジーズ 磁界センサー及び磁気ヘッド
JP2003067904A (ja) 2001-08-28 2003-03-07 Hitachi Ltd 磁気抵抗効果型磁気ヘッドおよびその製造方法
SG103326A1 (en) * 2001-11-30 2004-04-29 Inst Data Storage Magnetic force microscopy having a magnetic probe coated with exchange coupled magnetic mutiple layers
US6785099B2 (en) 2002-02-04 2004-08-31 Hitachi Global Storage Technologies Netherlands B.V. Read gap improvements through high resistance magnetic shield layers
US7486457B2 (en) * 2002-02-15 2009-02-03 Hitachi Global Storage Technologies Netherlands B.V. Method and apparatus for predicting write failure resulting from flying height modulation
JP2003281705A (ja) 2002-03-25 2003-10-03 Hitachi Ltd 磁気ヘッド、磁気ヘッドジンバルアッセンブリ、磁気記録再生装置及び磁性メモリ
DE10214946B4 (de) * 2002-04-04 2006-01-19 "Stiftung Caesar" (Center Of Advanced European Studies And Research) TMR-Sensor
US6846683B2 (en) 2002-05-10 2005-01-25 Infineon Technologies Ag Method of forming surface-smoothing layer for semiconductor devices with magnetic material layers
US7005958B2 (en) 2002-06-14 2006-02-28 Honeywell International Inc. Dual axis magnetic sensor
JP4487472B2 (ja) 2002-07-05 2010-06-23 株式会社日立製作所 磁気抵抗効果素子、及びこれを備える磁気ヘッド、磁気記録装置、磁気メモリ
RU2316783C2 (ru) * 2002-07-26 2008-02-10 Роберт Бош Гмбх Магниторезистивная слоистая система и чувствительный элемент на основе такой слоистой системы
US20040027846A1 (en) * 2002-08-06 2004-02-12 Thaddeus Schroeder Method for forming ferromagnetic targets for position sensors
JP3648504B2 (ja) * 2002-09-06 2005-05-18 株式会社東芝 磁気抵抗効果素子、磁気ヘッドおよび磁気再生装置
JP3650092B2 (ja) * 2002-09-09 2005-05-18 Tdk株式会社 交換結合膜、スピンバルブ膜、薄膜磁気ヘッド、磁気ヘッド装置及び磁気記録再生装置
WO2004051629A1 (ja) 2002-12-05 2004-06-17 Matsushita Electric Industrial Co., Ltd. 磁気ディスク装置及びその製造方法
JP4147118B2 (ja) 2003-01-15 2008-09-10 株式会社日立製作所 3端子型磁気ヘッドとそれを搭載した磁気記録再生装置
US7016163B2 (en) * 2003-02-20 2006-03-21 Honeywell International Inc. Magnetic field sensor
US6775195B1 (en) 2003-02-28 2004-08-10 Union Semiconductor Technology Center Apparatus and method for accessing a magnetoresistive random access memory array
US7916435B1 (en) 2003-05-02 2011-03-29 Hitachi Global Storage Technologies Netherlands B.V. Magnetic tunnel transistor having a base structure that provides polarization of unpolarized electrons from an emitter based upon a magnetic orientation of a free layer and a self-pinned layer
US7230804B2 (en) * 2003-05-02 2007-06-12 Hitachi Global Storage Technologies Netherlands B.V. Method and apparatus for providing a magnetic tunnel transistor with a self-pinned emitter
JP4082274B2 (ja) 2003-05-22 2008-04-30 株式会社日立製作所 磁気センサ及びそれを備える磁気ヘッド
US20040265636A1 (en) * 2003-06-24 2004-12-30 Doerner Mary F. Magnetic recording disk with improved antiferromagnetically coupling film
US6893741B2 (en) * 2003-06-24 2005-05-17 Hitachi Global Storage Technologies Netherlands B.V. Magnetic device with improved antiferromagnetically coupling film
JP4469570B2 (ja) * 2003-07-24 2010-05-26 株式会社東芝 磁気抵抗効果素子、磁気ヘッドおよび磁気記録再生装置
JP2005056538A (ja) * 2003-08-07 2005-03-03 Tdk Corp 薄膜磁気ヘッドの製造方法
US7180714B2 (en) 2003-09-30 2007-02-20 Hitachi Global Storage Technolgies Netherlands B.V. Apparatus for providing a ballistic magnetoresistive sensor in a current perpendicular-to-plane mode
JP4128938B2 (ja) 2003-10-28 2008-07-30 株式会社日立製作所 磁気ヘッド及び磁気記録再生装置
US6956269B1 (en) * 2003-12-22 2005-10-18 National Semiconductor Corporation Spin-polarization of carriers in semiconductor materials for spin-based microelectronic devices
JP2005209301A (ja) 2004-01-23 2005-08-04 Hitachi Global Storage Technologies Netherlands Bv 磁気ヘッド及びその製造方法
US7019371B2 (en) * 2004-01-26 2006-03-28 Seagate Technology Llc Current-in-plane magnetic sensor including a trilayer structure
US7112375B2 (en) * 2004-01-26 2006-09-26 Hitachi Global Storage Technologies Netherlands B.V. Seed layer structure for improved crystallographic orientation of a hard magnetic material
US7283333B2 (en) * 2004-02-11 2007-10-16 Hitachi Global Storage Technologies Netherlands B.V. Self-pinned double tunnel junction head
US7190560B2 (en) * 2004-02-18 2007-03-13 Hitachi Global Storage Technologies Netherlands B.V. Self-pinned CPP sensor using Fe/Cr/Fe structure
US7221545B2 (en) * 2004-02-18 2007-05-22 Hitachi Global Storage Technologies Netherlands B.V. High HC reference layer structure for self-pinned GMR heads
JP4433820B2 (ja) * 2004-02-20 2010-03-17 Tdk株式会社 磁気検出素子およびその形成方法ならびに磁気センサ、電流計
WO2005088655A1 (en) * 2004-03-12 2005-09-22 The Provost Fellows And Scholars Of The College Of The Holy And Undivided Trinity Of Queen Elizabeth Near Dublin A magnetoresistive medium
JP4202958B2 (ja) * 2004-03-30 2008-12-24 株式会社東芝 磁気抵抗効果素子
JP2005347495A (ja) * 2004-06-02 2005-12-15 Tdk Corp 磁気抵抗効果素子、薄膜磁気ヘッド、磁気ヘッド装置及び磁気記録再生装置
JP4692805B2 (ja) * 2004-06-30 2011-06-01 Tdk株式会社 磁気検出素子およびその形成方法
US7397637B2 (en) * 2004-08-30 2008-07-08 Hitachi Global Storage Technologies Netherlands B.V. Sensor with in-stack bias structure providing enhanced magnetostatic stabilization
US7557562B2 (en) 2004-09-17 2009-07-07 Nve Corporation Inverted magnetic isolator
CN100340697C (zh) * 2004-10-28 2007-10-03 复旦大学 一种可提高巨磁电阻效应的自旋阀制备方法
CN100368820C (zh) * 2004-11-10 2008-02-13 中国科学院物理研究所 自旋阀型数字式磁场传感器及其制作方法
JP2006139886A (ja) 2004-11-15 2006-06-01 Hitachi Global Storage Technologies Netherlands Bv 磁気抵抗効果型磁気ヘッド及びその製造方法
CN100389326C (zh) * 2004-12-31 2008-05-21 中山大学 利用免疫磁珠的生物检测装置及其检测方法
JP4573736B2 (ja) 2005-08-31 2010-11-04 三菱電機株式会社 磁界検出装置
KR100730385B1 (ko) * 2005-10-19 2007-06-19 상지대학교산학협력단 자성박막을 이용한 맥진 센서
JP2007200428A (ja) * 2006-01-25 2007-08-09 Hitachi Global Storage Technologies Netherlands Bv 磁気抵抗効果型磁気ヘッド及びその製造方法
JP2007299880A (ja) * 2006-04-28 2007-11-15 Toshiba Corp 磁気抵抗効果素子,および磁気抵抗効果素子の製造方法
JP4731393B2 (ja) 2006-04-28 2011-07-20 株式会社日立製作所 磁気再生ヘッド
JP5044157B2 (ja) * 2006-07-11 2012-10-10 株式会社東芝 磁気抵抗効果素子,磁気ヘッド,および磁気再生装置
US7750627B2 (en) * 2006-10-24 2010-07-06 Headway Technologies, Inc. Magnetic film sensor having a magnetic film for generating a magnetostriction and a depressed insulating layer
JP4388093B2 (ja) * 2007-03-27 2009-12-24 株式会社東芝 磁気抵抗効果素子、磁気ヘッド、磁気記録再生装置
JP4964301B2 (ja) * 2007-05-28 2012-06-27 三菱電機株式会社 磁界検出装置
US8519703B2 (en) * 2008-03-20 2013-08-27 Infineon Technologies Ag Magnetic sensor device and method of determining resistance values
US8106654B2 (en) * 2008-05-27 2012-01-31 Infineon Technologies Ag Magnetic sensor integrated circuit device and method
US8093892B2 (en) * 2008-07-24 2012-01-10 Infineon Technologies Ag System with 90 degree sense layer magnetic orientation
JP5032430B2 (ja) * 2008-09-26 2012-09-26 株式会社東芝 磁気抵抗効果素子の製造方法、磁気抵抗効果素子、磁気ヘッドアセンブリ及び磁気記録再生装置
JP5039007B2 (ja) * 2008-09-26 2012-10-03 株式会社東芝 磁気抵抗効果素子の製造方法、磁気抵抗効果素子、磁気ヘッドアセンブリ及び磁気記録再生装置
JP5039006B2 (ja) 2008-09-26 2012-10-03 株式会社東芝 磁気抵抗効果素子の製造方法、磁気抵抗効果素子、磁気ヘッドアセンブリ及び磁気記録再生装置
JP5032429B2 (ja) * 2008-09-26 2012-09-26 株式会社東芝 磁気抵抗効果素子の製造方法、磁気抵抗効果素子、磁気ヘッドアセンブリ及び磁気記録再生装置
CN101672903B (zh) * 2009-09-23 2011-09-14 电子科技大学 一种惠斯通电桥式自旋阀磁传感器的制备方法
US8694280B2 (en) * 2009-09-28 2014-04-08 International Business Machines Corporation Servo control circuit for detecting analytes via nanoparticle-labeled substances with electromagnetic read-write heads
US8154957B1 (en) 2010-03-01 2012-04-10 Katsnelson Esfir Z Magneto-optical device with an optically induced magnetization
JP5101659B2 (ja) * 2010-05-25 2012-12-19 株式会社東芝 血圧センサ
US9304130B2 (en) 2010-12-16 2016-04-05 International Business Machines Corporation Trenched sample assembly for detection of analytes with electromagnetic read-write heads
US9040311B2 (en) 2011-05-03 2015-05-26 International Business Machines Corporation Calibration assembly for aide in detection of analytes with electromagnetic read-write heads
US8855957B2 (en) 2011-05-03 2014-10-07 International Business Machines Corporation Method for calibrating read sensors of electromagnetic read-write heads
US9229071B2 (en) 2011-06-01 2016-01-05 International Business Machines Corporation Identification of molecules based on frequency responses using electromagnetic write-heads and magneto-resistive sensors
US9417237B2 (en) 2011-06-01 2016-08-16 International Business Machines Corporation Biosample plate with data storage and wireless communication means
TWI449067B (zh) * 2011-06-01 2014-08-11 Voltafield Technology Corp 自旋閥磁阻感測器
DE112012005322B4 (de) 2011-12-20 2022-02-10 Mitsubishi Electric Corporation Drehwinkel-Detektiervorrichtung
US8643981B2 (en) 2011-12-28 2014-02-04 HGST Netherlands B. V. Magnetic domain control for an embedded contact sensor for a magnetic recording head
US9435800B2 (en) 2012-09-14 2016-09-06 International Business Machines Corporation Sample assembly with an electromagnetic field to accelerate the bonding of target antigens and nanoparticles
US9214172B2 (en) * 2013-10-23 2015-12-15 Western Digital (Fremont), Llc Method of manufacturing a magnetic read head
CN106597102B (zh) * 2016-12-12 2020-05-05 四川大学 磁性薄膜结构以及含有其的磁敏传感器器件、应用方法
CN107576718A (zh) * 2017-10-26 2018-01-12 北京航空航天大学 一种固体内杂质浓度的测量***及测量方法
CN107807142A (zh) * 2017-10-26 2018-03-16 北京航空航天大学 一种固体所含杂质浓度的测量***及测量方法
CN111740010B (zh) * 2020-06-18 2022-11-15 电子科技大学 一种基于多层磁性复合结构的各向异性磁电阻

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH651151A5 (de) * 1979-11-27 1985-08-30 Landis & Gyr Ag Messwandler zum messen eines insbesondere von einem messstrom erzeugten magnetfeldes.
US4447839A (en) * 1980-10-28 1984-05-08 Compagnie Internationale Pour L'informatique Cii-Honeywell Bull (Societe Anonyme) Magnetoresistant transducer
NL8101962A (nl) * 1981-04-22 1982-11-16 Philips Nv Magnetische sensor.
US4663685A (en) * 1985-08-15 1987-05-05 International Business Machines Magnetoresistive read transducer having patterned longitudinal bias
US4755897A (en) * 1987-04-28 1988-07-05 International Business Machines Corporation Magnetoresistive sensor with improved antiferromagnetic film
US4785366A (en) * 1987-07-09 1988-11-15 International Business Machine Corporation Magnetoresistive read transducer having patterned orientation of longitudinal bias
DE3820475C1 (ko) * 1988-06-16 1989-12-21 Kernforschungsanlage Juelich Gmbh, 5170 Juelich, De
DE4027226A1 (de) * 1990-02-13 1991-08-14 Forschungszentrum Juelich Gmbh Magnetfeldsensor mit ferromagnetischer, duenner schicht

Also Published As

Publication number Publication date
EP0490608B1 (en) 2000-03-08
DE69132027D1 (de) 2000-04-13
EP0490608A3 (en) 1993-05-26
KR960015920B1 (en) 1996-11-23
CA2054580C (en) 1994-05-03
JPH04358310A (ja) 1992-12-11
US5206590A (en) 1993-04-27
DE69132027T2 (de) 2000-09-14
CA2054580A1 (en) 1992-06-12
CN1062425A (zh) 1992-07-01
CN1022142C (zh) 1993-09-15
SG42305A1 (en) 1997-08-15
EP0490608A2 (en) 1992-06-17
JPH0821166B2 (ja) 1996-03-04
MY107672A (en) 1996-05-30

Similar Documents

Publication Publication Date Title
KR920013258A (ko) 자기성 전기저항 센서
KR870002551A (ko) 자기 저항성 판독 변환기
KR930006645A (ko) 자기 저항 효과형 자기 헤드
MY110478A (en) Magnetoresistive spin valve sensor having a nonmagnetic back layer
MY110737A (en) Current biased magnetoresistive spin valve sensor
CA1241058A (en) Magnetic reluctance sensing apparatus and method
KR950704820A (ko) 자기 저항 장치 및, 이 장치를 이용한 자기헤드(Magneto-resistance device, and magnetic head employing such a device)
KR970063044A (ko) 박막 자기헤드
MY108176A (en) Magnetoresistive sensor based on oscillations in the magnetoresistance
EP0534791A3 (en) Magnetoresistance effect type thin film magnetic head
KR960705187A (ko) 자기저항성 선형 변위센서, 각 변위센서 및, 가변저항
KR950704694A (ko) 합성 반강자성 자석을 갖춘 자기저항 센서 및 그 제조방법(magneto-resistive sensor with a synthetic anti-ferromagnet, and a method of producing the sensor)
MY136486A (en) Antiferromagnetic exchange coupling in magnetoresistive spin valve sensors
EP0357200A3 (en) Position sensor
KR840000018A (ko) 자기 감지기 및 자기 감지기용 자기 투입 부품
KR960011854A (ko) 자기저항효과 박막 및 그 제조방법
KR970018763A (ko) 자기저항 소자 및 센서
KR870001546A (ko) 자기 저항 효과형 자기 호출 장치
KR880011738A (ko) 자기 기록매체
KR860000629A (ko) 자기헤드
KR970007836A (ko) 자기 저항 헤드
KR970067110A (ko) 박막 자기 헤드
EP0357199A3 (en) Improved position sensor
JPS54158960A (en) Position detector
KR930016787A (ko) 자기저항 효과센서

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20101102

Year of fee payment: 15

EXPY Expiration of term