KR900702573A - 개량된 태양전지용 접촉구의 제조방법 - Google Patents
개량된 태양전지용 접촉구의 제조방법Info
- Publication number
- KR900702573A KR900702573A KR1019900700250A KR900700250A KR900702573A KR 900702573 A KR900702573 A KR 900702573A KR 1019900700250 A KR1019900700250 A KR 1019900700250A KR 900700250 A KR900700250 A KR 900700250A KR 900702573 A KR900702573 A KR 900702573A
- Authority
- KR
- South Korea
- Prior art keywords
- metal
- paste
- substrate
- glass
- nickel
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims 2
- 238000000034 method Methods 0.000 claims 20
- 229910052751 metal Inorganic materials 0.000 claims 11
- 239000002184 metal Substances 0.000 claims 11
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 10
- 239000000758 substrate Substances 0.000 claims 9
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims 6
- 238000010438 heat treatment Methods 0.000 claims 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims 6
- 229910052759 nickel Inorganic materials 0.000 claims 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims 4
- 239000011521 glass Substances 0.000 claims 4
- 229910052710 silicon Inorganic materials 0.000 claims 4
- 239000010703 silicon Substances 0.000 claims 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 4
- 229910052763 palladium Inorganic materials 0.000 claims 3
- 229910052697 platinum Inorganic materials 0.000 claims 3
- 229910052703 rhodium Inorganic materials 0.000 claims 3
- 239000010948 rhodium Substances 0.000 claims 3
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims 3
- 239000005368 silicate glass Substances 0.000 claims 3
- 229910052709 silver Inorganic materials 0.000 claims 3
- 239000004332 silver Substances 0.000 claims 3
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims 2
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 claims 2
- 229910052782 aluminium Inorganic materials 0.000 claims 2
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 claims 2
- 239000003960 organic solvent Substances 0.000 claims 2
- 229940116411 terpineol Drugs 0.000 claims 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical compound [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 239000012080 ambient air Substances 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 229910052796 boron Inorganic materials 0.000 claims 1
- 229910052810 boron oxide Inorganic materials 0.000 claims 1
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 claims 1
- -1 ethyl lysyl glycol monoethyl ether Chemical compound 0.000 claims 1
- 238000010304 firing Methods 0.000 claims 1
- 239000005355 lead glass Substances 0.000 claims 1
- 150000002739 metals Chemical class 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 238000007650 screen-printing Methods 0.000 claims 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
Claims (25)
- (a) (1) 반대로 접한 첫번째와 두번째 표면과, (2) 상기 첫번째 표면에 질화규소층을 갖는 실리콘 기재를 설치하고; (b) (1) 니켈, 은, 팔라듐, 백금과 로듐 류에서 선택한 금속, (2) 규산 납 유리 또는 규산붕소 납 유리로 된 유리 프릿과, (3) 유기 용제를 함유하는 페이스트로 상기 질화 규소층을 선택적으로 커버하고; (c) 상기 기재를 가열하여 상기 페이스트가 상기 질화규소에 침투하고 상기 첫번째 표면에서 오옴 접촉구를 형성하는 단계로 순서적으로 이루어짐을 특징으로 하는 고체 상태 반도체 장치의 제조방법.
- 제1항에 있어서, 실리콘 기재가 상기 첫번째 표면에 인접한 PN 접합부를 이룸을 특징으로 하는 제조방법.
- 제1항에 있어서, 상기 장치가 습식임을 특징으로 하는 제조방법.
- 제1항에 있어서, 상기 금속이 니켈임을 특징으로 하는 제조방법.
- 제1항에 있어서, 상기 금속이 니켈임을 특징으로 하는 제조방법.
- 제1항에 있어서, 상기 유리 프릿이 규산 납 유리임을 특징으로 하는 제조방법.
- 제1항에 있어서, 상기 유리가 약 5-80중량%의 납을 함유함을 특징으로 하는 제조방법.
- 제7항에 있어서, 상기 유리가 약 30중량% 이하의 산화붕소를 함유함을 특징으로 하는 제조방법.
- 제1항에 있어서, 상기 페이스트가 스크린 인쇄에 의하여 사용됨을 특징으로 하는 제조방법.
- 제1항에 있어서, 가열단계(C)를 산소-함유 분위기를 행함을 특징으로 하는 제조방법.
- 제1항에 있어서, 상기 금속이 은임을 특징으로 하는 제조방법.
- 제1항에 있어서, 상기 가열 단계가 주위 공기하에 로에서 이루어짐을 특징으로 하는 제조방법.
- 제12항에 있어서, 상기 가열 단계가 650-850℃의 온도에서 이루어짐을 특징으로 하는 제조방법.
- 제13항에 있어서, 상기 가열 단계에, 15-60초 동안 650-850℃의 온도에서 기재를 소성하는 것을 포함함을 특징으로 하는 제조방법.
- 제14항에 있어서, 상기 금속이 니켈임을 특징으로 하는 제조방법.
- 제1항에 있어서, 상기 금속이 팔라듐임을 특징으로 하는 제조방법.
- 제1항에 있어서, 상기 금속이 백금임을 특징으로 하는 제조방법.
- 제1항에 있어서, 상기 금속이 로듐암을 특징으로 하는 제조방법.
- 제1항에 있어서, 상기 기재가 상기 두번째 표면에서 두번째 오옴 접촉구를 가짐을 특징으로 하는 제조방법.
- 제19항에 있어서, 상기 두번째 오옴 접촉구가 알루미늄 또는 은 금속을 이루어짐을 특징으로 하는 제조방법.
- 제1항에 있어서, 두번째 알루미늄-함유 피막을 상기 기재에 사용함을 특징으로 하는 제조방법.
- 제1항에 있어서, 상기 페이스트가 테르피네올의 경우에는 페이스트중 10중량%이하, 에테르의 경우에는 2.0중량%의 테르피네올 또는 에틸련 글리클 모노에틸 에테르로 이루어짐을 특징으로 하는 제조방법.
- (a) (1) 반대편의 첫번째 및 두번째 표면과, (2) 상기 첫번째 표면에 질화규소층을 갖는 실리콘 기재를 설치하고; (b) (1) 하나이상의 선택된 전기 전도성 금속; (2) 규산납 유리 또는 프릿; (3) 유기 용제를 함유하는 페이스트로 상기 첫번째 표면을 선택적으로 커버하고; (c) 상기 기재를 가열하여 상기 페이스트가 상기 질화 규소에 침투하므로서 상기 선택된 금속이 상기 첫번째 표면에서 오옴 접촉구를 형성하는 방법에 의하여 형성됨을 특징으로 하는 고체 상태 반도체 장치.
- 제23항에 있어서, 상기 실리콘 기재가 상기 첫번째 표면에 인접한 PN 접합부를 이룸을 특징으로 하는 장치.
- 제24항에 있어서, 상기 페이스트가 니켈, 은, 팔라듐, 백금과 로듐에서 선택한 금속을 함유함을 특징으로 하는 장치.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US20530488A | 1988-06-10 | 1988-06-10 | |
US205,304 | 1988-06-10 | ||
PCT/US1989/002241 WO1989012321A1 (en) | 1988-06-10 | 1989-05-22 | An improved method of fabricating contacts for solar cells |
Publications (1)
Publication Number | Publication Date |
---|---|
KR900702573A true KR900702573A (ko) | 1990-12-07 |
Family
ID=22761652
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019900700250A KR900702573A (ko) | 1988-06-10 | 1989-05-22 | 개량된 태양전지용 접촉구의 제조방법 |
Country Status (10)
Country | Link |
---|---|
EP (1) | EP0374244B1 (ko) |
JP (1) | JPH03502627A (ko) |
KR (1) | KR900702573A (ko) |
CN (1) | CN1025905C (ko) |
AU (1) | AU626895B2 (ko) |
CA (1) | CA1323452C (ko) |
DE (1) | DE68918565T2 (ko) |
IL (1) | IL90456A (ko) |
WO (1) | WO1989012321A1 (ko) |
ZA (1) | ZA893988B (ko) |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5118362A (en) * | 1990-09-24 | 1992-06-02 | Mobil Solar Energy Corporation | Electrical contacts and methods of manufacturing same |
US5178685A (en) * | 1991-06-11 | 1993-01-12 | Mobil Solar Energy Corporation | Method for forming solar cell contacts and interconnecting solar cells |
CA2087707A1 (en) * | 1991-06-11 | 1992-12-12 | Fritz Wald | Solar cell and method of making same |
DE59207945D1 (de) * | 1991-11-11 | 1997-03-06 | Siemens Solar Gmbh | Verfahren zum Erzeugen feiner Elektrodenstruckturen |
DE4220158A1 (de) * | 1992-06-19 | 1993-12-23 | Battelle Institut E V | Verfahren zur selektiven Abscheidung von Aluminiumstrukturen aus der Gasphase |
US5411897A (en) * | 1994-02-04 | 1995-05-02 | Mobil Solar Energy Corporation | Machine and method for applying solder paste to electronic devices such as solar cells |
US5478402A (en) * | 1994-02-17 | 1995-12-26 | Ase Americas, Inc. | Solar cell modules and method of making same |
US5476553A (en) * | 1994-02-18 | 1995-12-19 | Ase Americas, Inc. | Solar cell modules and method of making same |
US20030178057A1 (en) | 2001-10-24 | 2003-09-25 | Shuichi Fujii | Solar cell, manufacturing method thereof and electrode material |
US7960645B2 (en) | 2003-05-07 | 2011-06-14 | Imec | Germanium solar cell and method for the production thereof |
US7964789B2 (en) | 2003-05-07 | 2011-06-21 | Imec | Germanium solar cell and method for the production thereof |
US7736940B2 (en) * | 2004-03-15 | 2010-06-15 | Solopower, Inc. | Technique and apparatus for depositing layers of semiconductors for solar cell and module fabrication |
DE102004032706A1 (de) | 2004-07-06 | 2006-02-02 | Epcos Ag | Verfahren zur Herstellung eines elektrischen Bauelements und das Bauelement |
DE602008003218D1 (de) * | 2007-05-07 | 2010-12-09 | Georgia Tech Res Inst | Herstellung eines hochwertigen rückseitigen kontakts mit lokaler rückseitiger siebdruckfläche |
US7820540B2 (en) * | 2007-12-21 | 2010-10-26 | Palo Alto Research Center Incorporated | Metallization contact structures and methods for forming multiple-layer electrode structures for silicon solar cells |
GB2459274A (en) * | 2008-04-15 | 2009-10-21 | Renewable Energy Corp Asa | Wafer based solar panels |
DE102008033169A1 (de) * | 2008-05-07 | 2009-11-12 | Ersol Solar Energy Ag | Verfahren zur Herstellung einer monokristallinen Solarzelle |
JP2012527782A (ja) * | 2009-05-20 | 2012-11-08 | イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー | シリコンウエハの前面にグリッド電極を形成する方法 |
CN102428567B (zh) | 2009-05-20 | 2015-01-07 | E.I.内穆尔杜邦公司 | 在硅片正面上形成栅极的方法 |
TWI504001B (zh) * | 2009-05-20 | 2015-10-11 | Du Pont | 在矽晶圓前側上形成柵極電極的方法 |
CN101807611B (zh) * | 2010-04-01 | 2011-12-21 | 中国石油大学(华东) | 一种具有光伏效应的钯掺杂碳薄膜材料 |
GB201219961D0 (en) | 2012-11-06 | 2012-12-19 | Intrinsiq Materials Ltd | Ink |
WO2015096581A1 (zh) * | 2013-12-23 | 2015-07-02 | 伍震威 | 用于功率半导体装置的场板结构及其制造方法 |
RU2568421C1 (ru) * | 2014-07-25 | 2015-11-20 | Федеральное государственное автономное образовательное учреждение высшего профессионального образования "Белгородский государственный национальный исследовательский университет", (НИУ "БелГУ") | СОЛНЕЧНЫЙ ЭЛЕМЕНТ НА ОСНОВЕ ГЕТЕРОСТРУКТУРЫ СМЕШАННЫЙ АМОРФНЫЙ И НАНОКРИСТАЛЛИЧЕСКИЙ НИТРИД КРЕМНИЯ - КРЕМНИЙ p-ТИПА |
AU2016229966B2 (en) | 2015-03-06 | 2018-09-27 | Atea Pharmaceuticals, Inc. | Beta-D-2'-deoxy-2'alpha-fluoro-2'-beta-C-substituted-2-modified-N6-substituted purine nucleotides for HCV treatment |
US11804558B2 (en) | 2017-12-29 | 2023-10-31 | Maxeon Solar Pte. Ltd. | Conductive contacts for polycrystalline silicon features of solar cells |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4256513A (en) * | 1978-10-19 | 1981-03-17 | Matsushita Electric Industrial Co., Ltd. | Photoelectric conversion device |
US4235644A (en) * | 1979-08-31 | 1980-11-25 | E. I. Du Pont De Nemours And Company | Thick film silver metallizations for silicon solar cells |
US4347262A (en) * | 1980-11-26 | 1982-08-31 | E. I. Du Pont De Nemours And Company | Aluminum-magnesium alloys in low resistance contacts to silicon |
US4375007A (en) * | 1980-11-26 | 1983-02-22 | E. I. Du Pont De Nemours & Co. | Silicon solar cells with aluminum-magnesium alloy low resistance contacts |
US4602120A (en) * | 1983-11-25 | 1986-07-22 | Atlantic Richfield Company | Solar cell manufacture |
JPS60140880A (ja) * | 1983-12-28 | 1985-07-25 | Hitachi Ltd | 太陽電池の製造方法 |
JPS60202921A (ja) * | 1984-03-28 | 1985-10-14 | Hitachi Ltd | 太陽電池の製造方法 |
JPS6249676A (ja) * | 1985-08-29 | 1987-03-04 | Sharp Corp | 太陽電池 |
DE3790981B4 (de) * | 1987-07-07 | 2006-04-20 | Rwe Schott Solar Inc. (N.D.Ges.D. Staates Delaware), Billerica | Verfahren zum Herstellen einer Photovoltaik-Solarzelle |
-
1989
- 1989-05-22 EP EP89907945A patent/EP0374244B1/en not_active Expired - Lifetime
- 1989-05-22 KR KR1019900700250A patent/KR900702573A/ko not_active IP Right Cessation
- 1989-05-22 DE DE68918565T patent/DE68918565T2/de not_active Expired - Lifetime
- 1989-05-22 AU AU38534/89A patent/AU626895B2/en not_active Ceased
- 1989-05-22 JP JP1507317A patent/JPH03502627A/ja active Pending
- 1989-05-22 WO PCT/US1989/002241 patent/WO1989012321A1/en active IP Right Grant
- 1989-05-25 ZA ZA893988A patent/ZA893988B/xx unknown
- 1989-05-30 IL IL9045689A patent/IL90456A/en not_active IP Right Cessation
- 1989-06-07 CA CA000602039A patent/CA1323452C/en not_active Expired - Fee Related
- 1989-06-10 CN CN89103886A patent/CN1025905C/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
IL90456A0 (en) | 1990-01-18 |
CA1323452C (en) | 1993-10-19 |
WO1989012321A1 (en) | 1989-12-14 |
EP0374244A4 (en) | 1991-01-30 |
DE68918565D1 (de) | 1994-11-03 |
EP0374244A1 (en) | 1990-06-27 |
IL90456A (en) | 1996-01-31 |
DE68918565T2 (de) | 1995-03-09 |
CN1025905C (zh) | 1994-09-07 |
AU626895B2 (en) | 1992-08-13 |
CN1038902A (zh) | 1990-01-17 |
ZA893988B (en) | 1991-04-24 |
AU3853489A (en) | 1990-01-05 |
JPH03502627A (ja) | 1991-06-13 |
EP0374244B1 (en) | 1994-09-28 |
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