JPS6445176A - Manufacture of solar cell element - Google Patents

Manufacture of solar cell element

Info

Publication number
JPS6445176A
JPS6445176A JP62201713A JP20171387A JPS6445176A JP S6445176 A JPS6445176 A JP S6445176A JP 62201713 A JP62201713 A JP 62201713A JP 20171387 A JP20171387 A JP 20171387A JP S6445176 A JPS6445176 A JP S6445176A
Authority
JP
Japan
Prior art keywords
substrate
gas
main surface
atmosphere
boron
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62201713A
Other languages
Japanese (ja)
Inventor
Kunihiro Matsukuma
Shigeru Kokuuchi
Kazuyoshi Nagata
Kazuo Nishinoiri
Keiichi Morita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP62201713A priority Critical patent/JPS6445176A/en
Publication of JPS6445176A publication Critical patent/JPS6445176A/en
Pending legal-status Critical Current

Links

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells

Abstract

PURPOSE:To make possible the formation of a roughness, by which the reflection of light is reduced, by a method wherein a boron oxide is coated on one main surface of a substrate and the diffusion of boron is performed in the substrate while halogen gas is supplied in an inactive atmosphere. CONSTITUTION:Ethylene glycol monoether, in which a boric acid is dissolved, is coated on one main surface of a p-type poly Si substrate 1 and is dried to form a boron oxide coat film 2. Then, a heating treatment is performed in a nitrogen gas-containing atmosphere to react the film 2 with silicon and to form a borosilicate glass 3. Moreover, halogen gas, such as chlorine gas, is supplied in an atmosphere containing chlorine and nitrogen and the other main surface, which is not covered with the glass 3, of the substrate 1 is subjected to vapor phase etching with the chlorine gas. After this, the supply of the chlorine gas is stopped and a high-temperature heating treatment is performed in a nitrogen gas-containing atmosphere to form a surface roughness 5 and a boron diffused layer (a p<+> layer) 4. Thereby, the surface roughness, by which the reflection of light is reduced, can be formed using the low-cost substrate.
JP62201713A 1987-08-14 1987-08-14 Manufacture of solar cell element Pending JPS6445176A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62201713A JPS6445176A (en) 1987-08-14 1987-08-14 Manufacture of solar cell element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62201713A JPS6445176A (en) 1987-08-14 1987-08-14 Manufacture of solar cell element

Publications (1)

Publication Number Publication Date
JPS6445176A true JPS6445176A (en) 1989-02-17

Family

ID=16445696

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62201713A Pending JPS6445176A (en) 1987-08-14 1987-08-14 Manufacture of solar cell element

Country Status (1)

Country Link
JP (1) JPS6445176A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06260670A (en) * 1993-03-05 1994-09-16 Hitachi Ltd Light confining structure for solar cell
CN1082254C (en) * 1995-08-22 2002-04-03 松下电器产业株式会社 Silicon Structure, its mfg. method and apparatus, and solar cell using same
JP2002134410A (en) * 2000-10-27 2002-05-10 Shin Etsu Handotai Co Ltd Semiconductor substrate and solar cell utilizing the same their producing method
KR100416740B1 (en) * 1997-02-17 2004-05-17 삼성전자주식회사 Method for fabricating rear locally sintered silicon solar cell
JP2005191315A (en) * 2003-12-25 2005-07-14 Kyocera Corp Photoelectric converter and its manufacturing method
WO2014174613A1 (en) * 2013-04-24 2014-10-30 三菱電機株式会社 Method for producing solar cell

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5498189A (en) * 1977-12-30 1979-08-02 Mobil Tyco Solar Energy Corp Method of fabricating solar battery having shallow deep composite junction unit
JPS55105382A (en) * 1979-02-05 1980-08-12 Ibm Method of roughening surface of silicon substrate
JPS6231834A (en) * 1985-08-02 1987-02-10 Hitachi Ltd Shutter control device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5498189A (en) * 1977-12-30 1979-08-02 Mobil Tyco Solar Energy Corp Method of fabricating solar battery having shallow deep composite junction unit
JPS55105382A (en) * 1979-02-05 1980-08-12 Ibm Method of roughening surface of silicon substrate
JPS6231834A (en) * 1985-08-02 1987-02-10 Hitachi Ltd Shutter control device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06260670A (en) * 1993-03-05 1994-09-16 Hitachi Ltd Light confining structure for solar cell
CN1082254C (en) * 1995-08-22 2002-04-03 松下电器产业株式会社 Silicon Structure, its mfg. method and apparatus, and solar cell using same
KR100416740B1 (en) * 1997-02-17 2004-05-17 삼성전자주식회사 Method for fabricating rear locally sintered silicon solar cell
JP2002134410A (en) * 2000-10-27 2002-05-10 Shin Etsu Handotai Co Ltd Semiconductor substrate and solar cell utilizing the same their producing method
JP2005191315A (en) * 2003-12-25 2005-07-14 Kyocera Corp Photoelectric converter and its manufacturing method
WO2014174613A1 (en) * 2013-04-24 2014-10-30 三菱電機株式会社 Method for producing solar cell
US9685581B2 (en) 2013-04-24 2017-06-20 Mitsubishi Electric Corporation Manufacturing method of solar cell

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