DE68918565D1 - Verfahren zur herstellung von sonnenzellenkontakten. - Google Patents

Verfahren zur herstellung von sonnenzellenkontakten.

Info

Publication number
DE68918565D1
DE68918565D1 DE68918565T DE68918565T DE68918565D1 DE 68918565 D1 DE68918565 D1 DE 68918565D1 DE 68918565 T DE68918565 T DE 68918565T DE 68918565 T DE68918565 T DE 68918565T DE 68918565 D1 DE68918565 D1 DE 68918565D1
Authority
DE
Germany
Prior art keywords
cell contacts
sun cell
producing sun
producing
contacts
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE68918565T
Other languages
English (en)
Other versions
DE68918565T2 (de
Inventor
Jack Hanoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Schott Solar CSP Inc
Original Assignee
Mobil Solar Energy Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mobil Solar Energy Corp filed Critical Mobil Solar Energy Corp
Publication of DE68918565D1 publication Critical patent/DE68918565D1/de
Application granted granted Critical
Publication of DE68918565T2 publication Critical patent/DE68918565T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
DE68918565T 1988-06-10 1989-05-22 Verfahren zur herstellung von sonnenzellenkontakten. Expired - Lifetime DE68918565T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US20530488A 1988-06-10 1988-06-10
PCT/US1989/002241 WO1989012321A1 (en) 1988-06-10 1989-05-22 An improved method of fabricating contacts for solar cells

Publications (2)

Publication Number Publication Date
DE68918565D1 true DE68918565D1 (de) 1994-11-03
DE68918565T2 DE68918565T2 (de) 1995-03-09

Family

ID=22761652

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68918565T Expired - Lifetime DE68918565T2 (de) 1988-06-10 1989-05-22 Verfahren zur herstellung von sonnenzellenkontakten.

Country Status (10)

Country Link
EP (1) EP0374244B1 (de)
JP (1) JPH03502627A (de)
KR (1) KR900702573A (de)
CN (1) CN1025905C (de)
AU (1) AU626895B2 (de)
CA (1) CA1323452C (de)
DE (1) DE68918565T2 (de)
IL (1) IL90456A (de)
WO (1) WO1989012321A1 (de)
ZA (1) ZA893988B (de)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5118362A (en) * 1990-09-24 1992-06-02 Mobil Solar Energy Corporation Electrical contacts and methods of manufacturing same
DE69224965T2 (de) * 1991-06-11 1998-10-29 Ase Americas Inc Verbesserte solarzelle und verfahren zu ihrer herstellung
US5178685A (en) * 1991-06-11 1993-01-12 Mobil Solar Energy Corporation Method for forming solar cell contacts and interconnecting solar cells
DE59207945D1 (de) * 1991-11-11 1997-03-06 Siemens Solar Gmbh Verfahren zum Erzeugen feiner Elektrodenstruckturen
DE4220158A1 (de) * 1992-06-19 1993-12-23 Battelle Institut E V Verfahren zur selektiven Abscheidung von Aluminiumstrukturen aus der Gasphase
US5411897A (en) * 1994-02-04 1995-05-02 Mobil Solar Energy Corporation Machine and method for applying solder paste to electronic devices such as solar cells
US5478402A (en) * 1994-02-17 1995-12-26 Ase Americas, Inc. Solar cell modules and method of making same
US5476553A (en) * 1994-02-18 1995-12-19 Ase Americas, Inc. Solar cell modules and method of making same
US20030178057A1 (en) 2001-10-24 2003-09-25 Shuichi Fujii Solar cell, manufacturing method thereof and electrode material
US7964789B2 (en) 2003-05-07 2011-06-21 Imec Germanium solar cell and method for the production thereof
US7960645B2 (en) 2003-05-07 2011-06-14 Imec Germanium solar cell and method for the production thereof
US7736940B2 (en) * 2004-03-15 2010-06-15 Solopower, Inc. Technique and apparatus for depositing layers of semiconductors for solar cell and module fabrication
DE102004032706A1 (de) 2004-07-06 2006-02-02 Epcos Ag Verfahren zur Herstellung eines elektrischen Bauelements und das Bauelement
ES2354400T3 (es) * 2007-05-07 2011-03-14 Georgia Tech Research Corporation Formación de un contacto posterior de alta calidad con un campo en la superficie posterior local serigrafiada.
US7820540B2 (en) * 2007-12-21 2010-10-26 Palo Alto Research Center Incorporated Metallization contact structures and methods for forming multiple-layer electrode structures for silicon solar cells
GB2459274A (en) * 2008-04-15 2009-10-21 Renewable Energy Corp Asa Wafer based solar panels
DE102008033169A1 (de) * 2008-05-07 2009-11-12 Ersol Solar Energy Ag Verfahren zur Herstellung einer monokristallinen Solarzelle
KR101322142B1 (ko) * 2009-05-20 2013-10-28 이 아이 듀폰 디 네모아 앤드 캄파니 규소 웨이퍼의 전면 상에 그리드 전극을 형성하는 방법
EP2433304A1 (de) 2009-05-20 2012-03-28 E. I. du Pont de Nemours and Company Prozess zur bildung einer gitterelektrode auf der vorderseite eines siliciumwafers
TWI504001B (zh) * 2009-05-20 2015-10-11 Du Pont 在矽晶圓前側上形成柵極電極的方法
CN101807611B (zh) * 2010-04-01 2011-12-21 中国石油大学(华东) 一种具有光伏效应的钯掺杂碳薄膜材料
GB201219961D0 (en) 2012-11-06 2012-12-19 Intrinsiq Materials Ltd Ink
WO2015096581A1 (zh) * 2013-12-23 2015-07-02 伍震威 用于功率半导体装置的场板结构及其制造方法
RU2568421C1 (ru) * 2014-07-25 2015-11-20 Федеральное государственное автономное образовательное учреждение высшего профессионального образования "Белгородский государственный национальный исследовательский университет", (НИУ "БелГУ") СОЛНЕЧНЫЙ ЭЛЕМЕНТ НА ОСНОВЕ ГЕТЕРОСТРУКТУРЫ СМЕШАННЫЙ АМОРФНЫЙ И НАНОКРИСТАЛЛИЧЕСКИЙ НИТРИД КРЕМНИЯ - КРЕМНИЙ p-ТИПА
KR20220025914A (ko) 2015-03-06 2022-03-03 아테아 파마슈티컬즈, 인크. HCV 치료를 위한 β-D-2'-데옥시-2'-α-플루오로-2'-β-C-치환된-2-변형된-N6-치환된 퓨린 뉴클레오티드
US11804558B2 (en) 2017-12-29 2023-10-31 Maxeon Solar Pte. Ltd. Conductive contacts for polycrystalline silicon features of solar cells

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4256513A (en) * 1978-10-19 1981-03-17 Matsushita Electric Industrial Co., Ltd. Photoelectric conversion device
US4235644A (en) * 1979-08-31 1980-11-25 E. I. Du Pont De Nemours And Company Thick film silver metallizations for silicon solar cells
US4375007A (en) * 1980-11-26 1983-02-22 E. I. Du Pont De Nemours & Co. Silicon solar cells with aluminum-magnesium alloy low resistance contacts
US4347262A (en) * 1980-11-26 1982-08-31 E. I. Du Pont De Nemours And Company Aluminum-magnesium alloys in low resistance contacts to silicon
US4602120A (en) * 1983-11-25 1986-07-22 Atlantic Richfield Company Solar cell manufacture
JPS60140880A (ja) * 1983-12-28 1985-07-25 Hitachi Ltd 太陽電池の製造方法
JPS60202921A (ja) * 1984-03-28 1985-10-14 Hitachi Ltd 太陽電池の製造方法
JPS6249676A (ja) * 1985-08-29 1987-03-04 Sharp Corp 太陽電池
WO1989000341A1 (en) * 1987-07-07 1989-01-12 Mobil Solar Energy Corporation Method of fabricating solar cells with anti-reflection coating

Also Published As

Publication number Publication date
EP0374244B1 (de) 1994-09-28
JPH03502627A (ja) 1991-06-13
CN1038902A (zh) 1990-01-17
AU3853489A (en) 1990-01-05
EP0374244A1 (de) 1990-06-27
ZA893988B (en) 1991-04-24
IL90456A (en) 1996-01-31
CN1025905C (zh) 1994-09-07
CA1323452C (en) 1993-10-19
AU626895B2 (en) 1992-08-13
EP0374244A4 (en) 1991-01-30
WO1989012321A1 (en) 1989-12-14
DE68918565T2 (de) 1995-03-09
KR900702573A (ko) 1990-12-07
IL90456A0 (en) 1990-01-18

Similar Documents

Publication Publication Date Title
DE68918565D1 (de) Verfahren zur herstellung von sonnenzellenkontakten.
DE3762745D1 (de) Verfahren zur herstellung von 2-chlor-5-chlormethylthiazol.
DE3763558D1 (de) Verfahren zur herstellung von 2-chlor-5-chlormethylpyridin.
DE3577854D1 (de) Verfahren zur herstellung von aethylenkopolymer.
DE58901324D1 (de) Verfahren zur herstellung von solarsilicium.
DE3680394D1 (de) Verfahren zur herstellung von polyolefinen.
DE68908193D1 (de) Verfahren zur herstellung von fluorglimmer.
DE3587333D1 (de) Verfahren zur herstellung von festen loesungen.
ATE85030T1 (de) Verfahren zur herstellung von wasserstoffperoxid.
DE3781660D1 (de) Verfahren zur herstellung von elementen mit zwischenraum.
DE3785723D1 (de) Verfahren zur herstellung von polyolefinen.
DE68918601D1 (de) Verfahren zur herstellung von ortho-nitrobenzonitrilen.
DE68901908D1 (de) Verfahren zur herstellung von mesophasepech.
DE58902073D1 (de) Verfahren zur herstellung von organohalogensilanen.
DE68904436D1 (de) Verfahren zur herstellung von 1-alkyl-5-nitro-imidazolen.
DE3774298D1 (de) Verfahren zur herstellung von polyolefinen.
DE3769076D1 (de) Verfahren zur herstellung von fluorbenzaldehyden.
DE3766910D1 (de) Verfahren zur herstellung von dihydrocyclocitral.
DE68905908D1 (de) Verfahren zur herstellung von alkansulfonamiden.
DE3761903D1 (de) Verfahren zur herstellung von merkaptoalkoholen.
DE68906638D1 (de) Verfahren zur herstellung von 4-methylpyrazolen.
DE58901624D1 (de) Verfahren zur herstellung von fluorbenzolen.
DE68907097D1 (de) Verfahren zur herstellung von ketodiestern.
DE68903517D1 (de) Verfahren zur herstellung von acylisocyanaten.
DE58902083D1 (de) Verfahren zur herstellung von dihydroxydionen.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: ASE AMERICAS, INC. (N.D. GES. D. STAATES DELAWARE)

8327 Change in the person/name/address of the patent owner

Owner name: RWE SCHOTT SOLAR INC. (N.D.GES.D. STAATES DELAWARE

8327 Change in the person/name/address of the patent owner

Owner name: SCHOTT SOLAR, INC.(N.D.GES.D. STAATES DELAWARE, US