KR870005462A - 감지증폭회로 - Google Patents

감지증폭회로 Download PDF

Info

Publication number
KR870005462A
KR870005462A KR860009693A KR860009693A KR870005462A KR 870005462 A KR870005462 A KR 870005462A KR 860009693 A KR860009693 A KR 860009693A KR 860009693 A KR860009693 A KR 860009693A KR 870005462 A KR870005462 A KR 870005462A
Authority
KR
South Korea
Prior art keywords
semiconductor substrate
gate electrode
amplifier circuit
detection amplifier
drain
Prior art date
Application number
KR860009693A
Other languages
English (en)
Other versions
KR910001159B1 (ko
Inventor
가츠다카 노가미
Original Assignee
와타리 스기이치로
가부시키가이샤 도시바
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 와타리 스기이치로, 가부시키가이샤 도시바 filed Critical 와타리 스기이치로
Publication of KR870005462A publication Critical patent/KR870005462A/ko
Application granted granted Critical
Publication of KR910001159B1 publication Critical patent/KR910001159B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/919—Elements of similar construction connected in series or parallel to average out manufacturing variations in characteristics

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Memories (AREA)
  • Dram (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Amplifiers (AREA)

Abstract

내용 없음

Description

감지증폭회로
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 반도체메모리내의 랫치형 감지증폭회로의 회로도.
제5도는 본 발명의 제1실시예에 관한 감지증폭기 유니트의 구조를 나타낸 도면.
제6도는 본 발명의 제2실시예에 관한 CMOS감지증폭기 유니트의 구조를 나타낸 도면.
*도면의 주요 부분에 대한 부호의 설명
10A,10B,26 : 배선층 12,54 : 기판
14A,14B,30 : 게이트 전극
16A,16B,22A,22B,60A-60D,62A-60D,62A-62H,70A,70B : 접속구
18A,20B : 드레인영역 18B,20A : 소오스영역
24A,24B,52A-52D,58A-58A-58M,68 : 도전층 50A,50B,72A,72B : 감지증폭기
56A-56F : n-형 영역 64A,64B : 전극층
74 : n-형 웰영역 76A-76F : P-형 영역

Claims (1)

  1. 반도체기판과 이 반도체기판의 상방에서 한 방향으로 연장된 제1게이트전극 및 이 제1게이트전극의 양측에서 반도체기판내에 자기정합적으로 형성되어 1쌍의 소오스와 드레인으로 동작하는 제1, 제2반도체영역으로 이루어진 제1 MIS트랜지스터와, 반도체기판의 상방에서 한 방향으로 연장된 제2게이트전극과 이 제2게이트전극의 양측에서 반도체기판내에 자기정합적으로 형성되어 1쌍의 소오스와 드레인으로 동작하는 제3, 제4반도체영역으로 이루어진 제2 MIS트랜지스터를 구비하고 있는 감지증폭회로에 있어서,
    상기 제1, 제2MIS트랜지스터 상호간에 그 드레인으로부터 소오스로의 배열방향을 일치시킨 것을 특징으로 하는 감지증폭회로.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019860009693A 1985-11-15 1986-11-14 감지증폭회로 KR910001159B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP60-256084 1985-11-15
JP60256084A JPH0642537B2 (ja) 1985-11-15 1985-11-15 半導体装置

Publications (2)

Publication Number Publication Date
KR870005462A true KR870005462A (ko) 1987-06-09
KR910001159B1 KR910001159B1 (ko) 1991-02-25

Family

ID=17287667

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019860009693A KR910001159B1 (ko) 1985-11-15 1986-11-14 감지증폭회로

Country Status (5)

Country Link
US (1) US5175604A (ko)
EP (1) EP0222396B1 (ko)
JP (1) JPH0642537B2 (ko)
KR (1) KR910001159B1 (ko)
DE (1) DE3677141D1 (ko)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0192992A (ja) 1987-10-02 1989-04-12 Matsushita Electric Ind Co Ltd センスアンプ回路
JPH01130574A (ja) * 1987-11-17 1989-05-23 Rohm Co Ltd 半導体装置
JPH0738547B2 (ja) * 1988-07-25 1995-04-26 日本電気株式会社 演算増幅器
JP2700489B2 (ja) * 1989-05-18 1998-01-21 三菱電機株式会社 半導体記憶装置
US5289040A (en) * 1991-08-12 1994-02-22 National Semiconductor Corporation Compensating lead structure for distributed IC components
US5389810A (en) * 1992-03-27 1995-02-14 Matsushita Electric Industrial Co., Ltd. Semiconductor device having at least one symmetrical pair of MOSFETs
JP3533227B2 (ja) * 1992-09-10 2004-05-31 株式会社日立製作所 半導体記憶装置
JP3004177B2 (ja) * 1993-09-16 2000-01-31 株式会社東芝 半導体集積回路装置
TW310470B (ko) * 1995-05-01 1997-07-11 Micron Technology Inc
JP2004235515A (ja) 2003-01-31 2004-08-19 Renesas Technology Corp 半導体装置
US20080031029A1 (en) * 2006-08-05 2008-02-07 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor memory device with split bit-line structure
KR100761854B1 (ko) 2006-08-08 2007-09-28 삼성전자주식회사 비트라인 이퀄라이저 및 이를 구비하는 반도체 메모리장치, 그리고 비트라인 이퀄라이저의 제조 방법

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3477031A (en) * 1966-09-09 1969-11-04 Hitachi Ltd Differential amplifier circuit employing multiple differential amplifier stages
FR1563879A (ko) * 1968-02-09 1969-04-18
JPS53675B2 (ko) * 1972-03-16 1978-01-11
JPS5927101B2 (ja) * 1976-06-21 1984-07-03 日本電信電話株式会社 半導体装置
JPS538528A (en) * 1976-07-12 1978-01-26 Nec Corp Memory circuit
JPS5925381B2 (ja) * 1977-12-30 1984-06-16 富士通株式会社 半導体集積回路装置
JPS55115353A (en) * 1979-02-27 1980-09-05 Fujitsu Ltd Cell rotatable by 90
JPS5615079A (en) * 1979-07-16 1981-02-13 Mitsubishi Electric Corp Insulated gate field effect transistor couple
US4280855A (en) * 1980-01-23 1981-07-28 Ibm Corporation Method of making a dual DMOS device by ion implantation and diffusion
US4356504A (en) * 1980-03-28 1982-10-26 International Microcircuits, Inc. MOS Integrated circuit structure for discretionary interconnection
DE3101520A1 (de) * 1981-01-19 1982-08-26 Siemens AG, 1000 Berlin und 8000 München Monolithisch integrierter halbleiterspeicher
JPS5812195A (ja) * 1981-07-15 1983-01-24 Nec Corp 半導体記憶装置
JPS5943824B2 (ja) * 1982-03-03 1984-10-24 三菱電機株式会社 半導体集積回路装置
JPS5927101A (ja) * 1982-08-02 1984-02-13 大阪瓦斯株式会社 廃熱回収装置
JPS6065547A (ja) * 1983-09-20 1985-04-15 Sharp Corp 半導体装置
JPS60130855A (ja) * 1983-12-20 1985-07-12 Toshiba Corp 半導体集積回路
EP0170052B1 (en) * 1984-07-02 1992-04-01 Fujitsu Limited Master slice type semiconductor circuit device
JPS61100947A (ja) * 1984-10-22 1986-05-19 Toshiba Corp 半導体集積回路装置
JPH0638468B2 (ja) * 1984-12-18 1994-05-18 三洋電機株式会社 半導体集積回路装置
JPH0752757B2 (ja) * 1985-04-12 1995-06-05 株式会社日立製作所 半導体記憶装置
US4602270A (en) * 1985-05-17 1986-07-22 United Technologies Corporation Gate array with reduced isolation

Also Published As

Publication number Publication date
JPS62115861A (ja) 1987-05-27
US5175604A (en) 1992-12-29
JPH0642537B2 (ja) 1994-06-01
DE3677141D1 (de) 1991-02-28
EP0222396B1 (en) 1991-01-23
EP0222396A1 (en) 1987-05-20
KR910001159B1 (ko) 1991-02-25

Similar Documents

Publication Publication Date Title
KR900019265A (ko) 트랜치 게이트 mos fet
KR940010352A (ko) 반도체기억장치
KR960026941A (ko) 반도체장치
KR850005160A (ko) 적층형 반도체 기억장치
KR890702254A (ko) 집적회로 트랜치 셀
KR910020904A (ko) 반도체기억장치 및 그 제조 방법
KR960036075A (ko) 반도체 장치
KR870005462A (ko) 감지증폭회로
KR930006950A (ko) 정적 메모리 장치
KR920000145A (ko) 반도체 메모리
KR920010902A (ko) 반도체장치
KR940020424A (ko) 정적 반도체 기억 장치
KR890004444A (ko) Mos트랜지스터
KR950015755A (ko) 반도체 집적 회로장치
KR960032771A (ko) 접합 전계 효과 트랜지스터를 갖는 반도체 장치
KR880004589A (ko) 기판바이어스 전압발생기를 구비한 상보형 집적회로 배열
KR890017769A (ko) 반도체 장치 및 제조방법
KR880006775A (ko) 씨모오스 디램에서 레이아웃이 최적화된 감지증폭기
KR860009489A (ko) 반도체 집적회로장치 및 그 제조방법
KR920003552A (ko) 반도체 장치
KR870004529A (ko) 반도체 기억장치
KR950021538A (ko) 반도체 집적 회로
KR880009448A (ko) 반도체 집적회로 장치
KR960015896A (ko) 큰 기판 접촉 영역을 갖는 반도체 장치
KR920018982A (ko) 반도체 장치 및 반도체 기억장치

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20060131

Year of fee payment: 16

EXPY Expiration of term