KR900012364A - 더미비트선을 갖춘 반도체 메모리장치 - Google Patents
더미비트선을 갖춘 반도체 메모리장치Info
- Publication number
- KR900012364A KR900012364A KR1019900001106A KR900001106A KR900012364A KR 900012364 A KR900012364 A KR 900012364A KR 1019900001106 A KR1019900001106 A KR 1019900001106A KR 900001106 A KR900001106 A KR 900001106A KR 900012364 A KR900012364 A KR 900012364A
- Authority
- KR
- South Korea
- Prior art keywords
- memory device
- bit line
- semiconductor memory
- dummy bit
- dummy
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/14—Dummy cell management; Sense reference voltage generators
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
- G11C11/419—Read-write [R-W] circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
- G11C7/062—Differential amplifiers of non-latching type, e.g. comparators, long-tailed pairs
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Static Random-Access Memory (AREA)
- Read Only Memory (AREA)
- Dram (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1021004A JPH02201797A (ja) | 1989-01-31 | 1989-01-31 | 半導体メモリ装置 |
JP01-021004 | 1989-01-31 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR900012364A true KR900012364A (ko) | 1990-08-03 |
KR930007279B1 KR930007279B1 (ko) | 1993-08-04 |
Family
ID=12042936
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019900001106A KR930007279B1 (ko) | 1989-01-31 | 1990-01-31 | 더미비트선을 갖춘 반도체 메모리장치 |
Country Status (5)
Country | Link |
---|---|
US (1) | US5007024A (ko) |
EP (1) | EP0383080B1 (ko) |
JP (1) | JPH02201797A (ko) |
KR (1) | KR930007279B1 (ko) |
DE (1) | DE69007827T2 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100735642B1 (ko) * | 2001-06-15 | 2007-07-06 | 후지쯔 가부시끼가이샤 | 반도체 기억장치 |
Families Citing this family (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2789755B2 (ja) * | 1990-01-12 | 1998-08-20 | 日本電気株式会社 | 同期式半導体記憶装置 |
JPH04214297A (ja) * | 1990-12-13 | 1992-08-05 | Mitsubishi Electric Corp | 増幅回路 |
JP3057780B2 (ja) * | 1991-03-06 | 2000-07-04 | 日本電気アイシーマイコンシステム株式会社 | 半導体集積回路 |
JPH05266663A (ja) * | 1992-03-19 | 1993-10-15 | Fujitsu Ltd | 半導体記憶装置 |
US5289415A (en) * | 1992-04-17 | 1994-02-22 | Motorola, Inc. | Sense amplifier and latching circuit for an SRAM |
EP0600142B1 (en) * | 1992-11-30 | 1999-05-06 | STMicroelectronics S.r.l. | High performance single port RAM generator architecture |
GB2277390B (en) * | 1993-04-21 | 1997-02-26 | Plessey Semiconductors Ltd | Random access memory |
US5424985A (en) * | 1993-06-30 | 1995-06-13 | Sgs-Thomson Microelectronics, Inc. | Compensating delay element for clock generation in a memory device |
KR960011207B1 (ko) * | 1993-11-17 | 1996-08-21 | 김광호 | 반도체 메모리 장치의 데이타 센싱방법 및 그 회로 |
GB2286272A (en) * | 1994-01-31 | 1995-08-09 | Advanced Risc Mach Ltd | Data memory sense amplifier operation |
GB2286072B (en) * | 1994-01-31 | 1998-02-25 | Advanced Risc Mach Ltd | Sense amplification in data memories |
US5694143A (en) | 1994-06-02 | 1997-12-02 | Accelerix Limited | Single chip frame buffer and graphics accelerator |
JPH10502181A (ja) | 1994-06-20 | 1998-02-24 | ネオマジック・コーポレイション | メモリインタフェースのないグラフィックスコントローラ集積回路 |
US5481500A (en) * | 1994-07-22 | 1996-01-02 | International Business Machines Corporation | Precharged bit decoder and sense amplifier with integrated latch usable in pipelined memories |
US5687130A (en) * | 1994-11-30 | 1997-11-11 | Texas Instruments Incorporated | Memory cell with single bit line read back |
US5596539A (en) * | 1995-12-28 | 1997-01-21 | Lsi Logic Corporation | Method and apparatus for a low power self-timed memory control system |
US5828245A (en) * | 1996-10-24 | 1998-10-27 | Stmicroelectronics, Inc. | Driver circuit including amplifier operated in a switching mode |
US5708617A (en) * | 1997-01-28 | 1998-01-13 | Micron Technology, Inc. | Regressive drive sense amplifier |
EP0869506B1 (en) * | 1997-04-03 | 2003-07-02 | STMicroelectronics S.r.l. | Memory device with reduced power dissipation |
JP4059951B2 (ja) * | 1997-04-11 | 2008-03-12 | 株式会社ルネサステクノロジ | 半導体記憶装置 |
US5973974A (en) * | 1997-09-09 | 1999-10-26 | Micro Technology, Inc. | Regressive drive sense amplifier |
US5946267A (en) * | 1997-11-25 | 1999-08-31 | Atmel Corporation | Zero power high speed configuration memory |
EP0944089A1 (en) * | 1998-03-16 | 1999-09-22 | Nec Corporation | Semiconductor memory device |
JP2000243082A (ja) * | 1999-02-17 | 2000-09-08 | Mitsubishi Electric Corp | 半導体記憶装置 |
CA2277717C (en) * | 1999-07-12 | 2006-12-05 | Mosaid Technologies Incorporated | Circuit and method for multiple match detection in content addressable memories |
US6490214B2 (en) * | 2000-12-26 | 2002-12-03 | Kabushiki Kaisha Toshiba | Semiconductor memory device |
ITRM20010531A1 (it) * | 2001-08-31 | 2003-02-28 | Micron Technology Inc | Dispositivo rilevatore a bassa potenza e alta tensione per memorie ditipo flash. |
KR100454145B1 (ko) * | 2001-11-23 | 2004-10-26 | 주식회사 하이닉스반도체 | 플래쉬 메모리 장치 |
KR100555521B1 (ko) * | 2003-10-28 | 2006-03-03 | 삼성전자주식회사 | 두 번 이상 샘플링하는 감지 증폭기를 구비하는 반도체 장치 및 반도체 장치의 데이터 판독 방법 |
JP5343916B2 (ja) | 2010-04-16 | 2013-11-13 | 富士通セミコンダクター株式会社 | 半導体メモリ |
US8693264B2 (en) | 2012-02-21 | 2014-04-08 | Lsi Corporation | Memory device having sensing circuitry with automatic latching of sense amplifier output node |
JP6752126B2 (ja) * | 2016-11-25 | 2020-09-09 | ラピスセミコンダクタ株式会社 | センスアンプ回路 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4351034A (en) * | 1980-10-10 | 1982-09-21 | Inmos Corporation | Folded bit line-shared sense amplifiers |
JPS60125998A (ja) * | 1983-12-12 | 1985-07-05 | Fujitsu Ltd | 半導体記憶装置 |
US4715015A (en) * | 1984-06-01 | 1987-12-22 | Sharp Kabushiki Kaisha | Dynamic semiconductor memory with improved sense signal |
JPH0736273B2 (ja) * | 1984-11-26 | 1995-04-19 | 株式会社日立製作所 | 半導体集積回路 |
EP0189908B1 (en) * | 1985-01-30 | 1992-10-28 | Nec Corporation | Dynamic memory with improved arrangement for precharging bit lines |
EP0200500A3 (en) * | 1985-04-26 | 1989-03-08 | Advanced Micro Devices, Inc. | Cmos memory bias systems |
JPH0787032B2 (ja) * | 1985-07-08 | 1995-09-20 | 日本電気アイシ−マイコンシステム株式会社 | 半導体記憶装置 |
JPH0743938B2 (ja) * | 1985-10-09 | 1995-05-15 | 日本電気株式会社 | 差動増幅器 |
JPS6286599A (ja) * | 1985-10-09 | 1987-04-21 | Nec Corp | 半導体記憶装置 |
JPS62197996A (ja) * | 1986-02-24 | 1987-09-01 | Toshiba Corp | 半導体メモリのセンスアンプ |
JPS62197990A (ja) * | 1986-02-25 | 1987-09-01 | Mitsubishi Electric Corp | 半導体記憶回路 |
JP2618938B2 (ja) * | 1987-11-25 | 1997-06-11 | 株式会社東芝 | 半導体記憶装置 |
-
1989
- 1989-01-31 JP JP1021004A patent/JPH02201797A/ja active Pending
-
1990
- 1990-01-18 US US07/466,920 patent/US5007024A/en not_active Expired - Lifetime
- 1990-01-26 EP EP90101625A patent/EP0383080B1/en not_active Expired - Lifetime
- 1990-01-26 DE DE69007827T patent/DE69007827T2/de not_active Expired - Fee Related
- 1990-01-31 KR KR1019900001106A patent/KR930007279B1/ko not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100735642B1 (ko) * | 2001-06-15 | 2007-07-06 | 후지쯔 가부시끼가이샤 | 반도체 기억장치 |
Also Published As
Publication number | Publication date |
---|---|
EP0383080B1 (en) | 1994-04-06 |
JPH02201797A (ja) | 1990-08-09 |
DE69007827D1 (de) | 1994-05-11 |
US5007024A (en) | 1991-04-09 |
DE69007827T2 (de) | 1994-08-11 |
EP0383080A3 (en) | 1991-06-26 |
KR930007279B1 (ko) | 1993-08-04 |
EP0383080A2 (en) | 1990-08-22 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
G160 | Decision to publish patent application | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20090727 Year of fee payment: 17 |
|
EXPY | Expiration of term |