KR890015383A - 프린트 배선 포토레지스트용 전착도장 방법 - Google Patents

프린트 배선 포토레지스트용 전착도장 방법 Download PDF

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Publication number
KR890015383A
KR890015383A KR1019890003940A KR890003940A KR890015383A KR 890015383 A KR890015383 A KR 890015383A KR 1019890003940 A KR1019890003940 A KR 1019890003940A KR 890003940 A KR890003940 A KR 890003940A KR 890015383 A KR890015383 A KR 890015383A
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South Korea
Prior art keywords
electrodeposition coating
resin
coating composition
polymerizable unsaturated
water
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KR1019890003940A
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KR940008381B1 (ko
Inventor
겐지 세꼬
나오즈미 이와사와
고오 아까기
도시오 곤도오
마사히로 호시노
이사오 고바야시
Original Assignee
원본미기재
간사이빼인또 가부시끼가이샤
미쓰비시덴끼 가부시끼가이샤
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Priority claimed from JP63098400A external-priority patent/JPH0769612B2/ja
Priority claimed from JP63109482A external-priority patent/JPH0769613B2/ja
Priority claimed from JP18703188A external-priority patent/JPH0721637B2/ja
Application filed by 원본미기재, 간사이빼인또 가부시끼가이샤, 미쓰비시덴끼 가부시끼가이샤 filed Critical 원본미기재
Publication of KR890015383A publication Critical patent/KR890015383A/ko
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Publication of KR940008381B1 publication Critical patent/KR940008381B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/469—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers
    • H01L21/47—Organic layers, e.g. photoresist
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/0073—Masks not provided for in groups H05K3/02 - H05K3/46, e.g. for photomechanical production of patterned surfaces
    • H05K3/0079—Masks not provided for in groups H05K3/02 - H05K3/46, e.g. for photomechanical production of patterned surfaces characterised by the method of application or removal of the mask
    • D—TEXTILES; PAPER
    • D06—TREATMENT OF TEXTILES OR THE LIKE; LAUNDERING; FLEXIBLE MATERIALS NOT OTHERWISE PROVIDED FOR
    • D06F—LAUNDERING, DRYING, IRONING, PRESSING OR FOLDING TEXTILE ARTICLES
    • D06F39/00—Details of washing machines not specific to a single type of machines covered by groups D06F9/00 - D06F27/00 
    • D06F39/08—Liquid supply or discharge arrangements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/092—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by backside coating or layers, by lubricating-slip layers or means, by oxygen barrier layers or by stripping-release layers or means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/164—Coating processes; Apparatus therefor using electric, electrostatic or magnetic means; powder coating
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/05—Patterning and lithography; Masks; Details of resist
    • H05K2203/0562—Details of resist
    • H05K2203/0577—Double layer of resist having the same pattern
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/13—Moulding and encapsulation; Deposition techniques; Protective layers
    • H05K2203/1333—Deposition techniques, e.g. coating
    • H05K2203/135—Electrophoretic deposition of insulating material
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
    • H05K3/061—Etching masks
    • H05K3/064—Photoresists
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Structural Engineering (AREA)
  • Architecture (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Textile Engineering (AREA)
  • Paints Or Removers (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Materials For Photolithography (AREA)

Abstract

내용 없음

Description

프린트 배선 포토레지스트용 전착도장 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (16)

  1. 동장(銅張) 적층판상에, 감광성 전착도료 조성물(A)를 전착도장한후, 다시 그 도막상에, 유리 전이온도(TG) 20℃이상의 수용성 또는 수분산성 수지를 주성분으로 하는 전착 도료 조성물(B)를 전착도장하는 것을 특징으로 하는 프린트 배선 포토레지스트용 전착도장 방법.
  2. 제 1 항에 있어서, 전착 도료 조성물(A) 및 (B)는, 수용성 또는 수분산성 중합성 불포화수지 및 광중합 개시제를 주성분으로 하는 네가티브형 전착도료 조성물인 방법.
  3. 제 2 항에 있어서, 중합성 불포화수지가 150~3000의 불포화당량 및 300이상의 수평균 분자량을 갖는 음이온성 또는 양이온성수지인 방법.
  4. 제 3 항에 있어서, 중합성 불포화지수가 고산가아크릴 수지에, 분자중에 중합성 불포화 결합 및 글리시딜기를 갖는 화합물을 부가한 음이온성 수지인 방법.
  5. 제 1항에 있어서, 잔착도료 조성물(A) 및 (B)는, 감광성기를 갖는 수용성 또는 수분산성수지를 주성분으로 하는 포지티브형 전착도료 조성물인 방법.
  6. 제 5항에 있어서, 감광성기를 갖는 수지가 감광성기로서 벤조퀴논디아지드 단위 또는 나프로퀴논디아지드 단위를 수지를 기준으로 해서 5~60wt％ 함유하는 것인 방법.
  7. 제 1 항에 있어서, 전착도료 조성물(B)가 감광성기를 갖지않는 비광가교형 수지를 주성분으로 하는 전착도료 조성물인 방법.
  8. 제 7 항에 있어서, 감광성기를 갖지않는 비광가교형 수지는, 중합성 불포화 수지중의 중합성 불포화기를 제거한 수지인 방법.
  9. 제 1 항에 있어서, 전착도료 조성물(A)에 사용하는 수지는, -50℃~60℃의 Tg를 갖는 것인 방법.
  10. 제 1 항에 있어서, 전착도료 조성물(B)에 사용하는 수지는, 40℃~120℃의 Tg를 갖는 것인 방법.
  11. 제 1 항에 있어서, 전착도료 조성물(B)에 사용하는 수지의 Tg가 전착도료 조성물(A)에 사용하는 수지의 Tg보다 적어도 5℃ 높은 방법.
  12. 제 2 항에 있어서, 네가티브형 전착도료 조성물(A) 및 (B)의 도포막 두께는 각각 4~70㎛ 및 0.5~30㎛ 이며, 양자의 합계막 두께는 5~70㎛ 인 방법.
  13. 제 5 항에 있어서, 포지티브형 전착도료 조성물(A) 및 (B)의 도포막 두께는 각각 2~50㎛ 및 0.5~30㎛ 이며, 양자의 합계막 두께는 3~50㎛ 인 방법.
  14. 제 5 항에 있어서, 포지티브형 전착도료 조성물(B)의 도포후, 전착도막을 가열처리하는 방법.
  15. 제 14 항에 있어서, 가열처리 조건이 표면온도 100℃ ~180℃, 1초~30분간인 방법.
  16. 청구범위의 방법으로 전착 도장된 프린트배선 포토레지스트.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019890003940A 1988-03-28 1989-03-28 프린트 배선 포토레지스트의 전착 도장 방법 KR940008381B1 (ko)

Applications Claiming Priority (12)

Application Number Priority Date Filing Date Title
JP7208388 1988-03-28
JP72083/88 1988-03-28
JP88-72083 1988-03-28
JP63098400A JPH0769612B2 (ja) 1988-03-28 1988-04-22 プリント配線フオトレジスト用電着塗装方法
JP98400/88 1988-04-22
JP88-98400 1988-04-22
JP63109482A JPH0769613B2 (ja) 1988-05-02 1988-05-02 プリント配線フオトレジスト用カチオン型電着塗装方法
JP88-109482 1988-05-02
JP109482/88 1988-05-02
JP187031/88 1988-07-28
JP88-187031 1988-07-28
JP18703188A JPH0721637B2 (ja) 1988-07-28 1988-07-28 ポジ型フオトレジストの形成方法

Publications (2)

Publication Number Publication Date
KR890015383A true KR890015383A (ko) 1989-10-30
KR940008381B1 KR940008381B1 (ko) 1994-09-12

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KR1019890003940A KR940008381B1 (ko) 1988-03-28 1989-03-28 프린트 배선 포토레지스트의 전착 도장 방법

Country Status (6)

Country Link
US (1) US4898656A (ko)
EP (1) EP0335330B1 (ko)
KR (1) KR940008381B1 (ko)
AU (1) AU613463B2 (ko)
CA (1) CA1337864C (ko)
DE (1) DE68907101T2 (ko)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB8822145D0 (en) * 1988-09-21 1988-10-26 Ciba Geigy Ag Method
JPH03177586A (ja) * 1989-12-04 1991-08-01 Nippon Paint Co Ltd フォトレジスト膜の形成方法
JP2865147B2 (ja) * 1990-06-20 1999-03-08 関西ペイント株式会社 ポジ型感光性電着塗料組成物
ATE175280T1 (de) * 1990-08-02 1999-01-15 Ppg Industries Inc Lichtempfindliche, elektroabscheidbare photoresistzusammensetzung
US5268256A (en) * 1990-08-02 1993-12-07 Ppg Industries, Inc. Photoimageable electrodepositable photoresist composition for producing non-tacky films
JP2847321B2 (ja) * 1990-08-14 1999-01-20 日本石油株式会社 ポジ型フォトレジスト組成物
US5246816A (en) * 1990-09-03 1993-09-21 Nippon Oil Co., Ltd. Cationic electrodeposition negative type resist composition
JPH0539444A (ja) * 1990-11-30 1993-02-19 Hitachi Chem Co Ltd ポジ型感光性アニオン電着塗料樹脂組成物、これを用いた電着塗装浴、電着塗装法及びプリント回路板の製造方法
US5314789A (en) * 1991-10-01 1994-05-24 Shipley Company Inc. Method of forming a relief image comprising amphoteric compositions
US5384229A (en) * 1992-05-07 1995-01-24 Shipley Company Inc. Photoimageable compositions for electrodeposition
JPH06164102A (ja) * 1992-11-25 1994-06-10 Nippon Paint Co Ltd 電着型感光性樹脂被膜の表面処理方法
DE4339019A1 (de) * 1993-11-10 1995-05-11 Atotech Deutschland Gmbh Verfahren zur Herstellung von Leiterplatten
JP3648704B2 (ja) * 2000-02-14 2005-05-18 タムラ化研株式会社 活性エネルギー線硬化性組成物及びプリント配線板
US6541537B1 (en) 2001-01-19 2003-04-01 Renaissance Technology Llc Acrylate polymeric compositions and methods
JP2004343351A (ja) * 2003-05-14 2004-12-02 Kansai Paint Co Ltd 自動車用アンテナ形成方法
US7863485B2 (en) * 2004-12-10 2011-01-04 Omnitech Environmental, Llc Additive and vehicle for inks, paints, coatings and adhesives
US7635552B2 (en) * 2006-07-25 2009-12-22 Endicott Interconnect Technologies, Inc. Photoresist composition with antibacterial agent

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL270834A (ko) * 1960-10-31
CA1051707A (en) * 1973-10-25 1979-04-03 Michael Gulla Photoresist film with non-photosensitive resist layer
JPS50152803A (ko) * 1974-05-29 1975-12-09
US4421620A (en) * 1982-02-11 1983-12-20 Ppg Industries, Inc. Novel process for pretreating and coating metallic substrates electrophoretically
JPS61206293A (ja) * 1985-03-08 1986-09-12 日本ペイント株式会社 回路板の製造方法

Also Published As

Publication number Publication date
DE68907101D1 (de) 1993-07-22
US4898656A (en) 1990-02-06
AU3173589A (en) 1989-09-28
DE68907101T2 (de) 1993-11-11
EP0335330A3 (en) 1990-04-11
KR940008381B1 (ko) 1994-09-12
CA1337864C (en) 1996-01-02
EP0335330B1 (en) 1993-06-16
EP0335330A2 (en) 1989-10-04
AU613463B2 (en) 1991-08-01

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