KR830001743A - 고압용 게이트 다이오드 스위치 - Google Patents
고압용 게이트 다이오드 스위치 Download PDFInfo
- Publication number
- KR830001743A KR830001743A KR1019790004540A KR790004540A KR830001743A KR 830001743 A KR830001743 A KR 830001743A KR 1019790004540 A KR1019790004540 A KR 1019790004540A KR 790004540 A KR790004540 A KR 790004540A KR 830001743 A KR830001743 A KR 830001743A
- Authority
- KR
- South Korea
- Prior art keywords
- high voltage
- diode switch
- voltage gate
- gate diode
- gate
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 claims 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76297—Dielectric isolation using EPIC techniques, i.e. epitaxial passivated integrated circuit
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
- H01L21/743—Making of internal connections, substrate contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7391—Gated diode structures
- H01L29/7392—Gated diode structures with PN junction gate, e.g. field controlled thyristors (FCTh), static induction thyristors (SITh)
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thyristors (AREA)
- Junction Field-Effect Transistors (AREA)
- Electronic Switches (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Thin Film Transistor (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 한 실시예에 따른 구조물을 도시한 것. 제2도는 제1도의 구조물의 회로 성분을 도시한 것. 제3도는 본 발명의 다른 실시예에 따른 쌍방향 스위치 회로를 도시한 것. 제4도는 본 발명의 다른 실시예 따른 구조물을 도시한 것. 제5도는 본 발명의 또 다른 실시예에 따른 구조물을 도시한 것. 제6도는 본 발명의 또 다른 실시예 따른 구조물을 도시한 것. 제7도는 본 발명의 또다른 실시예에 따른 구조물을 도시한 것. 제8도는 제6도 구조물의 평면도.
Claims (2)
- 반도체 게이트 다이오드 스위치에 있어서, 제1(18) 및 제2(24) 그리고 게이트 영역(20)은 각각 반도체부분(16)의 제1주 표면상에 포함된 면을 갖는 것을 특징으로하는 고압용 게이트 다이오드 스위치.
- ※ 참고사항 : 최초출원 내용의 일부를 보정하여 공개하는 것임.
Applications Claiming Priority (9)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US97202278A | 1978-12-20 | 1978-12-20 | |
US97205678A | 1978-12-20 | 1978-12-20 | |
US97202178A | 1978-12-20 | 1978-12-20 | |
US?972022? | 1978-12-20 | ||
US972056 | 1978-12-20 | ||
US?972056? | 1978-12-20 | ||
US972022 | 1978-12-20 | ||
US972021 | 1978-12-20 | ||
US?972021? | 1978-12-20 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR830001743A true KR830001743A (ko) | 1983-05-18 |
KR830002293B1 KR830002293B1 (ko) | 1983-10-21 |
Family
ID=27420763
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019790004540A KR830002293B1 (ko) | 1978-12-20 | 1979-12-20 | 고압용 게이트 다이오드 스위치 |
Country Status (18)
Country | Link |
---|---|
JP (1) | JPS6412106B2 (ko) |
KR (1) | KR830002293B1 (ko) |
AU (1) | AU529702B2 (ko) |
CH (1) | CH659151A5 (ko) |
DD (1) | DD147897A5 (ko) |
ES (1) | ES487066A1 (ko) |
FR (1) | FR2445026A1 (ko) |
GB (1) | GB2049283B (ko) |
HU (1) | HU181030B (ko) |
IE (1) | IE48892B1 (ko) |
IL (1) | IL58970A (ko) |
IN (1) | IN153497B (ko) |
IT (1) | IT1126603B (ko) |
NL (1) | NL7920184A (ko) |
PL (1) | PL220494A1 (ko) |
SE (1) | SE446139B (ko) |
SG (1) | SG32884G (ko) |
WO (1) | WO1980001337A1 (ko) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4242697A (en) * | 1979-03-14 | 1980-12-30 | Bell Telephone Laboratories, Incorporated | Dielectrically isolated high voltage semiconductor devices |
CA1145057A (en) * | 1979-12-28 | 1983-04-19 | Adrian R. Hartman | High voltage solid-state switch |
NL8220133A (nl) * | 1981-03-27 | 1983-02-01 | Western Electric Co | Gepoorte diodeschakelaar. |
US4467344A (en) * | 1981-12-23 | 1984-08-21 | At&T Bell Telephone Laboratories, Incorporated | Bidirectional switch using two gated diode switches in a single dielectrically isolated tub |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1547287A (fr) * | 1966-12-19 | 1968-11-22 | Lucas Industries Ltd | Diode semiconductrice |
US3417393A (en) * | 1967-10-18 | 1968-12-17 | Texas Instruments Inc | Integrated circuit modular radar antenna |
JPS4933432B1 (ko) * | 1968-12-20 | 1974-09-06 | ||
DE2102103A1 (de) * | 1970-01-22 | 1971-07-29 | Rca Corp | Durch Feldeffekt gesteuerte Diode |
US3722079A (en) * | 1970-06-05 | 1973-03-27 | Radiation Inc | Process for forming buried layers to reduce collector resistance in top contact transistors |
DE2241600A1 (de) * | 1971-08-26 | 1973-03-01 | Dionics Inc | Hochspannungs-p-n-uebergang und seine anwendung in halbleiterschaltelementen, sowie verfahren zu seiner herstellung |
JPS5032942U (ko) * | 1973-07-23 | 1975-04-10 | ||
US3911463A (en) * | 1974-01-07 | 1975-10-07 | Gen Electric | Planar unijunction transistor |
US4146905A (en) * | 1974-06-18 | 1979-03-27 | U.S. Philips Corporation | Semiconductor device having complementary transistor structures and method of manufacturing same |
-
1979
- 1979-12-06 JP JP55500207A patent/JPS6412106B2/ja not_active Expired
- 1979-12-06 WO PCT/US1979/001043 patent/WO1980001337A1/en unknown
- 1979-12-06 CH CH6266/80A patent/CH659151A5/de not_active IP Right Cessation
- 1979-12-06 GB GB8025972A patent/GB2049283B/en not_active Expired
- 1979-12-06 NL NL7920184A patent/NL7920184A/nl unknown
- 1979-12-10 HU HU79WE614A patent/HU181030B/hu unknown
- 1979-12-14 DD DD79217696A patent/DD147897A5/de unknown
- 1979-12-14 AU AU53866/79A patent/AU529702B2/en not_active Ceased
- 1979-12-17 IL IL58970A patent/IL58970A/xx unknown
- 1979-12-18 FR FR7930946A patent/FR2445026A1/fr active Granted
- 1979-12-18 PL PL22049479A patent/PL220494A1/xx unknown
- 1979-12-19 IE IE2474/79A patent/IE48892B1/en not_active IP Right Cessation
- 1979-12-19 IT IT28206/79A patent/IT1126603B/it active
- 1979-12-19 ES ES487066A patent/ES487066A1/es not_active Expired
- 1979-12-20 KR KR1019790004540A patent/KR830002293B1/ko active
-
1980
- 1980-08-13 SE SE8005703A patent/SE446139B/sv not_active IP Right Cessation
- 1980-11-28 IN IN1328/CAL/80A patent/IN153497B/en unknown
-
1984
- 1984-04-25 SG SG328/84A patent/SG32884G/en unknown
Also Published As
Publication number | Publication date |
---|---|
JPS6412106B2 (ko) | 1989-02-28 |
SG32884G (en) | 1985-02-08 |
ES487066A1 (es) | 1980-09-16 |
IT7928206A0 (it) | 1979-12-19 |
KR830002293B1 (ko) | 1983-10-21 |
IL58970A0 (en) | 1980-03-31 |
PL220494A1 (ko) | 1980-09-08 |
JPS55501079A (ko) | 1980-12-04 |
GB2049283B (en) | 1983-07-27 |
IE792474L (en) | 1980-06-20 |
IN153497B (ko) | 1984-07-21 |
GB2049283A (en) | 1980-12-17 |
SE8005703L (sv) | 1980-08-13 |
IT1126603B (it) | 1986-05-21 |
AU5386679A (en) | 1980-06-26 |
SE446139B (sv) | 1986-08-11 |
HU181030B (en) | 1983-05-30 |
IE48892B1 (en) | 1985-06-12 |
FR2445026B1 (ko) | 1983-08-19 |
WO1980001337A1 (en) | 1980-06-26 |
DD147897A5 (de) | 1981-04-22 |
FR2445026A1 (fr) | 1980-07-18 |
CH659151A5 (de) | 1986-12-31 |
AU529702B2 (en) | 1983-06-16 |
NL7920184A (nl) | 1980-10-31 |
IL58970A (en) | 1982-07-30 |
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