FR1547287A - Diode semiconductrice - Google Patents
Diode semiconductriceInfo
- Publication number
- FR1547287A FR1547287A FR132818A FR132818A FR1547287A FR 1547287 A FR1547287 A FR 1547287A FR 132818 A FR132818 A FR 132818A FR 132818 A FR132818 A FR 132818A FR 1547287 A FR1547287 A FR 1547287A
- Authority
- FR
- France
- Prior art keywords
- semiconductor diode
- diode
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR132818A FR1547287A (fr) | 1966-12-19 | 1967-12-19 | Diode semiconductrice |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB5668666 | 1966-12-19 | ||
FR132818A FR1547287A (fr) | 1966-12-19 | 1967-12-19 | Diode semiconductrice |
Publications (1)
Publication Number | Publication Date |
---|---|
FR1547287A true FR1547287A (fr) | 1968-11-22 |
Family
ID=26181649
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR132818A Expired FR1547287A (fr) | 1966-12-19 | 1967-12-19 | Diode semiconductrice |
Country Status (1)
Country | Link |
---|---|
FR (1) | FR1547287A (fr) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2024942A1 (fr) * | 1968-11-28 | 1970-09-04 | Mitsubishi Electric Corp | |
FR2445026A1 (fr) * | 1978-12-20 | 1980-07-18 | Western Electric Co | Interrupteur a l'etat solide et a isolation dielectrique |
US4602268A (en) * | 1978-12-20 | 1986-07-22 | At&T Bell Laboratories | High voltage dielectrically isolated dual gate solid-state switch |
US4608590A (en) * | 1978-12-20 | 1986-08-26 | At&T Bell Laboratories | High voltage dielectrically isolated solid-state switch |
DE10196362B4 (de) * | 2000-06-26 | 2007-04-05 | Fairchild Semiconductor Corp. | Leistungsdiode mit weichem Ausschaltverhalten (Soft Recovery) und darauf bezogenes Verfahren |
-
1967
- 1967-12-19 FR FR132818A patent/FR1547287A/fr not_active Expired
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2024942A1 (fr) * | 1968-11-28 | 1970-09-04 | Mitsubishi Electric Corp | |
FR2445026A1 (fr) * | 1978-12-20 | 1980-07-18 | Western Electric Co | Interrupteur a l'etat solide et a isolation dielectrique |
US4602268A (en) * | 1978-12-20 | 1986-07-22 | At&T Bell Laboratories | High voltage dielectrically isolated dual gate solid-state switch |
US4608590A (en) * | 1978-12-20 | 1986-08-26 | At&T Bell Laboratories | High voltage dielectrically isolated solid-state switch |
DE10196362B4 (de) * | 2000-06-26 | 2007-04-05 | Fairchild Semiconductor Corp. | Leistungsdiode mit weichem Ausschaltverhalten (Soft Recovery) und darauf bezogenes Verfahren |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CH474851A (de) | Halbleiteranordnung | |
FR1523867A (fr) | Microcircuits semiconducteurs | |
CH499203A (de) | Halbleiterelement | |
AT320029B (de) | Halbleiterdiodenanordnung | |
AT273300B (de) | Halbleiterbauelement | |
CH438497A (de) | Halbleiteranordnung | |
CH472783A (de) | Lawinendiode | |
CH483724A (de) | Halbleiterbauelement | |
DK117909B (da) | Halvlederapparat. | |
AT277386B (de) | Stoßspannungsfeste Halbleiterdiode | |
FR1533810A (fr) | Semiconducteur électroluminescent | |
FR1547287A (fr) | Diode semiconductrice | |
CH469357A (de) | Halbleiteranordnung | |
FR1540198A (fr) | Redresseur semi-conducteur commandé | |
CH454279A (de) | Halbleiterventil | |
CH474862A (de) | Halbleiterbauelement | |
CH506184A (de) | Halbleiterbauelement | |
CH463628A (de) | Halbleiterbauteil | |
AT281120B (de) | Halbleiterbauelement | |
FR1481737A (fr) | Semi-conducteur | |
CH497790A (de) | Halbleiterelement | |
CH458545A (de) | Halbleiterelement | |
CH477093A (de) | Halbleiterelement | |
CH455050A (de) | Halbleiterdiode | |
CH474154A (de) | Halbleiterbauelement |