FR1547287A - Diode semiconductrice - Google Patents

Diode semiconductrice

Info

Publication number
FR1547287A
FR1547287A FR132818A FR132818A FR1547287A FR 1547287 A FR1547287 A FR 1547287A FR 132818 A FR132818 A FR 132818A FR 132818 A FR132818 A FR 132818A FR 1547287 A FR1547287 A FR 1547287A
Authority
FR
France
Prior art keywords
semiconductor diode
diode
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR132818A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ZF International UK Ltd
Original Assignee
Lucas Industries Ltd
Joseph Lucas Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lucas Industries Ltd, Joseph Lucas Industries Ltd filed Critical Lucas Industries Ltd
Priority to FR132818A priority Critical patent/FR1547287A/fr
Application granted granted Critical
Publication of FR1547287A publication Critical patent/FR1547287A/fr
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/74Thyristor-type devices, e.g. having four-zone regenerative action
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
FR132818A 1966-12-19 1967-12-19 Diode semiconductrice Expired FR1547287A (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR132818A FR1547287A (fr) 1966-12-19 1967-12-19 Diode semiconductrice

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB5668666 1966-12-19
FR132818A FR1547287A (fr) 1966-12-19 1967-12-19 Diode semiconductrice

Publications (1)

Publication Number Publication Date
FR1547287A true FR1547287A (fr) 1968-11-22

Family

ID=26181649

Family Applications (1)

Application Number Title Priority Date Filing Date
FR132818A Expired FR1547287A (fr) 1966-12-19 1967-12-19 Diode semiconductrice

Country Status (1)

Country Link
FR (1) FR1547287A (fr)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2024942A1 (fr) * 1968-11-28 1970-09-04 Mitsubishi Electric Corp
FR2445026A1 (fr) * 1978-12-20 1980-07-18 Western Electric Co Interrupteur a l'etat solide et a isolation dielectrique
US4602268A (en) * 1978-12-20 1986-07-22 At&T Bell Laboratories High voltage dielectrically isolated dual gate solid-state switch
US4608590A (en) * 1978-12-20 1986-08-26 At&T Bell Laboratories High voltage dielectrically isolated solid-state switch
DE10196362B4 (de) * 2000-06-26 2007-04-05 Fairchild Semiconductor Corp. Leistungsdiode mit weichem Ausschaltverhalten (Soft Recovery) und darauf bezogenes Verfahren

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2024942A1 (fr) * 1968-11-28 1970-09-04 Mitsubishi Electric Corp
FR2445026A1 (fr) * 1978-12-20 1980-07-18 Western Electric Co Interrupteur a l'etat solide et a isolation dielectrique
US4602268A (en) * 1978-12-20 1986-07-22 At&T Bell Laboratories High voltage dielectrically isolated dual gate solid-state switch
US4608590A (en) * 1978-12-20 1986-08-26 At&T Bell Laboratories High voltage dielectrically isolated solid-state switch
DE10196362B4 (de) * 2000-06-26 2007-04-05 Fairchild Semiconductor Corp. Leistungsdiode mit weichem Ausschaltverhalten (Soft Recovery) und darauf bezogenes Verfahren

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