NL184185C - Darlingtonschakeling met een geintegreerde halfgeleiderdiode. - Google Patents

Darlingtonschakeling met een geintegreerde halfgeleiderdiode.

Info

Publication number
NL184185C
NL184185C NLAANVRAGE7803706,A NL7803706A NL184185C NL 184185 C NL184185 C NL 184185C NL 7803706 A NL7803706 A NL 7803706A NL 184185 C NL184185 C NL 184185C
Authority
NL
Netherlands
Prior art keywords
diod
integrated semiconductor
darlington switching
darlington
switching
Prior art date
Application number
NLAANVRAGE7803706,A
Other languages
English (en)
Other versions
NL184185B (nl
NL7803706A (nl
Inventor
Theodoor Henri Enzlin
Antonius Johannes Janssen
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Priority to NLAANVRAGE7803706,A priority Critical patent/NL184185C/nl
Priority to US06/024,750 priority patent/US4288807A/en
Priority to FR7908230A priority patent/FR2422259A1/fr
Priority to SE7902980A priority patent/SE7902980L/xx
Priority to GB7911734A priority patent/GB2018511B/en
Priority to AU45802/79A priority patent/AU4580279A/en
Priority to DE2913536A priority patent/DE2913536C2/de
Priority to IT21595/79A priority patent/IT1111929B/it
Priority to JP4242379A priority patent/JPS54137284A/ja
Publication of NL7803706A publication Critical patent/NL7803706A/nl
Publication of NL184185B publication Critical patent/NL184185B/nl
Application granted granted Critical
Publication of NL184185C publication Critical patent/NL184185C/nl

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0825—Combination of vertical direct transistors of the same conductivity type having different characteristics,(e.g. Darlington transistors)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
    • H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/914—Polysilicon containing oxygen, nitrogen, or carbon, e.g. sipos

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
NLAANVRAGE7803706,A 1978-04-07 1978-04-07 Darlingtonschakeling met een geintegreerde halfgeleiderdiode. NL184185C (nl)

Priority Applications (9)

Application Number Priority Date Filing Date Title
NLAANVRAGE7803706,A NL184185C (nl) 1978-04-07 1978-04-07 Darlingtonschakeling met een geintegreerde halfgeleiderdiode.
US06/024,750 US4288807A (en) 1978-04-07 1979-03-28 Darlington circuit having an improved diode drain
FR7908230A FR2422259A1 (fr) 1978-04-07 1979-04-02 Dispositif semiconducteur muni d'un circuit du genre darlington
GB7911734A GB2018511B (en) 1978-04-07 1979-04-04 Semiconductor device
SE7902980A SE7902980L (sv) 1978-04-07 1979-04-04 Halvledaranordning
AU45802/79A AU4580279A (en) 1978-04-07 1979-04-04 Semiconductor device having a darlington circuit
DE2913536A DE2913536C2 (de) 1978-04-07 1979-04-04 Halbleiteranordnung
IT21595/79A IT1111929B (it) 1978-04-07 1979-04-04 Dispositivo semiconduttore
JP4242379A JPS54137284A (en) 1978-04-07 1979-04-07 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NLAANVRAGE7803706,A NL184185C (nl) 1978-04-07 1978-04-07 Darlingtonschakeling met een geintegreerde halfgeleiderdiode.

Publications (3)

Publication Number Publication Date
NL7803706A NL7803706A (nl) 1979-10-09
NL184185B NL184185B (nl) 1988-12-01
NL184185C true NL184185C (nl) 1989-05-01

Family

ID=19830612

Family Applications (1)

Application Number Title Priority Date Filing Date
NLAANVRAGE7803706,A NL184185C (nl) 1978-04-07 1978-04-07 Darlingtonschakeling met een geintegreerde halfgeleiderdiode.

Country Status (9)

Country Link
US (1) US4288807A (nl)
JP (1) JPS54137284A (nl)
AU (1) AU4580279A (nl)
DE (1) DE2913536C2 (nl)
FR (1) FR2422259A1 (nl)
GB (1) GB2018511B (nl)
IT (1) IT1111929B (nl)
NL (1) NL184185C (nl)
SE (1) SE7902980L (nl)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2449333A1 (fr) * 1979-02-14 1980-09-12 Radiotechnique Compelec Perfectionnement aux dispositifs semi-conducteurs de type darlington
JPS60777B2 (ja) * 1979-05-25 1985-01-10 株式会社東芝 Ｍｏｓ半導体集積回路
NL8005995A (nl) * 1980-11-03 1982-06-01 Philips Nv Halfgeleiderinrichting.
JPS5799771A (en) * 1980-12-12 1982-06-21 Hitachi Ltd Semiconductor device
US4486770A (en) * 1981-04-27 1984-12-04 General Motors Corporation Isolated integrated circuit transistor with transient protection
DE3331631A1 (de) * 1982-09-01 1984-03-01 Mitsubishi Denki K.K., Tokyo Halbleiter-bauelement
JPS5987157U (ja) * 1982-12-01 1984-06-13 株式会社三社電機製作所 ダ−リントントランジスタ
JPS59110166A (ja) * 1982-12-15 1984-06-26 Sansha Electric Mfg Co Ltd ダ−リントントランジスタ
US4783694A (en) * 1984-03-16 1988-11-08 Motorola Inc. Integrated bipolar-MOS semiconductor device with common collector and drain
US4887144A (en) * 1985-07-26 1989-12-12 Texas Instruments Incorporated Topside substrate contact in a trenched semiconductor structure and method of fabrication
US4936928A (en) * 1985-11-27 1990-06-26 Raytheon Company Semiconductor device
GB2183907B (en) * 1985-11-27 1989-10-04 Raytheon Co Semiconductor device

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3913213A (en) * 1974-08-02 1975-10-21 Trw Inc Integrated circuit transistor switch
JPS52149666U (nl) * 1976-05-11 1977-11-12

Also Published As

Publication number Publication date
JPS54137284A (en) 1979-10-24
JPS575061B2 (nl) 1982-01-28
AU4580279A (en) 1979-10-11
IT1111929B (it) 1986-01-13
DE2913536A1 (de) 1979-10-18
NL184185B (nl) 1988-12-01
DE2913536C2 (de) 1982-12-09
GB2018511B (en) 1982-04-28
SE7902980L (sv) 1979-10-08
US4288807A (en) 1981-09-08
FR2422259B1 (nl) 1983-01-07
NL7803706A (nl) 1979-10-09
GB2018511A (en) 1979-10-17
IT7921595A0 (it) 1979-04-04
FR2422259A1 (fr) 1979-11-02

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Legal Events

Date Code Title Description
A1B A search report has been drawn up
BC A request for examination has been filed
A85 Still pending on 85-01-01
V1 Lapsed because of non-payment of the annual fee