KR850000803A - 반도체 장치 - Google Patents
반도체 장치 Download PDFInfo
- Publication number
- KR850000803A KR850000803A KR1019840002606A KR840002606A KR850000803A KR 850000803 A KR850000803 A KR 850000803A KR 1019840002606 A KR1019840002606 A KR 1019840002606A KR 840002606 A KR840002606 A KR 840002606A KR 850000803 A KR850000803 A KR 850000803A
- Authority
- KR
- South Korea
- Prior art keywords
- impurity region
- semiconductor devices
- semiconductor
- output pad
- semiconductor element
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 7
- 239000012535 impurity Substances 0.000 claims 4
- 230000001681 protective effect Effects 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
- G02B26/10—Scanning systems
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Power Engineering (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Optics & Photonics (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Mechanical Optical Scanning Systems (AREA)
- Laser Beam Printer (AREA)
- Diffracting Gratings Or Hologram Optical Elements (AREA)
Abstract
내용 없음.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 종래의 정전보호회로를 나터내는 도면. 제2도는 본 발명의 일실시예의 평면도. 제3도는 제2도의 장치의입력회로부를 형성하는 공정에 있어서의 반도체 장치 요부의 단면도.
Claims (1)
- 반도체기판(基板)상에 형성한 반도체소자(素子), 입력 또는 출력팻드 및 전기(前記) 입출력팻드와 반도체소자를 접속하는 회로를 포함하며, 전기(前記) 입출력팻드와 반도체 소자는 상기한 반도체소자의 불순물영역보다도 깊이 형성된 제1의 불순물영역과 이 제1의 불순물영역보다 얕은 깊이에 형성된 제2의 불순물영역으 되는 보호회로 소자를 거쳐 접속되는 것을 특징으로 하는 반도체 장치.※참고사항:최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58-119083 | 1983-06-30 | ||
JP58119083A JPS6010765A (ja) | 1983-06-30 | 1983-06-30 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR850000803A true KR850000803A (ko) | 1985-03-09 |
KR900003257B1 KR900003257B1 (ko) | 1990-05-12 |
Family
ID=14752456
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019840002606A KR900003257B1 (ko) | 1983-06-30 | 1984-05-14 | 보호회로를 갖는 반도체장치 |
KR8403791A KR900002967B1 (en) | 1983-06-30 | 1984-06-30 | Light beam scanning apparatus |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR8403791A KR900002967B1 (en) | 1983-06-30 | 1984-06-30 | Light beam scanning apparatus |
Country Status (6)
Country | Link |
---|---|
US (1) | US4720737A (ko) |
EP (1) | EP0130412B1 (ko) |
JP (1) | JPS6010765A (ko) |
KR (2) | KR900003257B1 (ko) |
CA (1) | CA1204524A (ko) |
DE (1) | DE3469246D1 (ko) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0659364B2 (ja) * | 1985-08-23 | 1994-08-10 | 株式会社日立製作所 | 放射性有機溶媒のイオン処理装置 |
JPS6271275A (ja) * | 1985-09-25 | 1987-04-01 | Toshiba Corp | 半導体集積回路 |
IT1186227B (it) * | 1985-12-03 | 1987-11-18 | Sgs Microelettronica Spa | Dispositivo di protezione contro le sovratensioni in ingresso per un circuito integrato di tipo mos |
JPH065749B2 (ja) * | 1986-05-22 | 1994-01-19 | 日本電気株式会社 | 半導体装置 |
USRE37477E1 (en) * | 1987-11-06 | 2001-12-18 | Sgs-Thomson Microelectronics, Inc. | Integrated circuit protected against electrostatic discharges, with variable protection threshold |
FR2623018B1 (fr) * | 1987-11-06 | 1990-02-09 | Thomson Semiconducteurs | Circuit integre protege contre les decharges electrostatiques avec seuil de protection variable |
US5141898A (en) * | 1988-02-02 | 1992-08-25 | Analog Devices, Incorporated | Integrated circuit with means for reducing ESD damage |
US5687109A (en) * | 1988-05-31 | 1997-11-11 | Micron Technology, Inc. | Integrated circuit module having on-chip surge capacitors |
US6124625A (en) | 1988-05-31 | 2000-09-26 | Micron Technology, Inc. | Chip decoupling capacitor |
CA2021184C (en) * | 1990-07-13 | 2000-10-17 | Orchard-Webb, John | Input protection device |
EP0517391A1 (en) * | 1991-06-05 | 1992-12-09 | STMicroelectronics, Inc. | ESD protection circuit |
JPH0617257U (ja) * | 1992-07-30 | 1994-03-04 | 鐘淵化学工業株式会社 | 太陽電池モジュール |
BE1007672A3 (nl) * | 1993-10-27 | 1995-09-12 | Philips Electronics Nv | Hoogfrequent halfgeleiderinrichting met beveiligingsinrichting. |
FR2716294B1 (fr) | 1994-01-28 | 1996-05-31 | Sgs Thomson Microelectronics | Procédé de réalisation d'un transistor bipolaire pour protection d'un circuit intégré contre les décharges électrostatiques. |
JPH0951078A (ja) * | 1995-05-29 | 1997-02-18 | Mitsubishi Electric Corp | 半導体記憶装置および半導体装置 |
JP3019760B2 (ja) * | 1995-11-15 | 2000-03-13 | 日本電気株式会社 | 半導体集積回路装置 |
US6410964B1 (en) * | 1998-03-31 | 2002-06-25 | Nec Corporation | Semiconductor device capable of preventing gate oxide film from damage by plasma process and method of manufacturing the same |
US6114756A (en) | 1998-04-01 | 2000-09-05 | Micron Technology, Inc. | Interdigitated capacitor design for integrated circuit leadframes |
US6414391B1 (en) * | 1998-06-30 | 2002-07-02 | Micron Technology, Inc. | Module assembly for stacked BGA packages with a common bus bar in the assembly |
US20020060343A1 (en) * | 1999-03-19 | 2002-05-23 | Robert J. Gauthier | Diffusion resistor/capacitor (drc) non-aligned mosfet structure |
JP3678212B2 (ja) * | 2002-05-20 | 2005-08-03 | ウシオ電機株式会社 | 超高圧水銀ランプ |
US6755700B2 (en) * | 2002-11-12 | 2004-06-29 | Modevation Enterprises Inc. | Reset speed control for watercraft |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1170705A (en) * | 1967-02-27 | 1969-11-12 | Hitachi Ltd | An Insulated Gate Type Field Effect Semiconductor Device having a Breakdown Preventing Circuit Device and a method of manufacturing the same |
US3673428A (en) * | 1970-09-18 | 1972-06-27 | Rca Corp | Input transient protection for complementary insulated gate field effect transistor integrated circuit device |
JPS5189392A (ko) * | 1975-02-03 | 1976-08-05 | ||
US4100561A (en) * | 1976-05-24 | 1978-07-11 | Rca Corp. | Protective circuit for MOS devices |
JPS5392675A (en) * | 1977-01-26 | 1978-08-14 | Nippon Precision Circuits | Protecting circuit |
JPS54140480A (en) * | 1978-04-24 | 1979-10-31 | Hitachi Ltd | Semiconductor device |
US4476476A (en) * | 1979-04-05 | 1984-10-09 | National Semiconductor Corporation | CMOS Input and output protection circuit |
JPS5694664A (en) * | 1979-12-27 | 1981-07-31 | Fujitsu Ltd | Semiconductor element |
JPS56138953A (en) * | 1980-03-31 | 1981-10-29 | Fujitsu Ltd | Semiconductor device |
JPS5715459A (en) * | 1980-07-01 | 1982-01-26 | Fujitsu Ltd | Semiconductor integrated circuit |
JPS57109375A (en) * | 1980-12-26 | 1982-07-07 | Fujitsu Ltd | Mis type transistor protection circuit |
US4602267A (en) * | 1981-02-17 | 1986-07-22 | Fujitsu Limited | Protection element for semiconductor device |
JPS57190359A (en) * | 1981-05-19 | 1982-11-22 | Toshiba Corp | Protecting device for semiconductor |
JPS57190360A (en) * | 1981-05-19 | 1982-11-22 | Toshiba Corp | Protecting device for semiconductor |
JPS57211272A (en) * | 1981-06-23 | 1982-12-25 | Toshiba Corp | Semiconductor device |
JPS5952866A (ja) * | 1982-09-20 | 1984-03-27 | Fujitsu Ltd | 半導体装置 |
-
1983
- 1983-06-30 JP JP58119083A patent/JPS6010765A/ja active Granted
-
1984
- 1984-05-14 KR KR1019840002606A patent/KR900003257B1/ko not_active IP Right Cessation
- 1984-06-07 EP EP84106503A patent/EP0130412B1/en not_active Expired
- 1984-06-07 DE DE8484106503T patent/DE3469246D1/de not_active Expired
- 1984-06-29 CA CA000457879A patent/CA1204524A/en not_active Expired
- 1984-06-30 KR KR8403791A patent/KR900002967B1/ko not_active IP Right Cessation
-
1986
- 1986-12-22 US US06/943,867 patent/US4720737A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE3469246D1 (en) | 1988-03-10 |
KR900002967B1 (en) | 1990-05-03 |
JPH0348663B2 (ko) | 1991-07-25 |
EP0130412B1 (en) | 1988-02-03 |
EP0130412A1 (en) | 1985-01-09 |
KR900003257B1 (ko) | 1990-05-12 |
KR850000705A (ko) | 1985-02-28 |
US4720737A (en) | 1988-01-19 |
JPS6010765A (ja) | 1985-01-19 |
CA1204524A (en) | 1986-05-13 |
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Legal Events
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A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
G160 | Decision to publish patent application | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20020502 Year of fee payment: 13 |
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LAPS | Lapse due to unpaid annual fee |