KR20100105734A - 히트 싱크 및 히트 싱크의 제조 방법 - Google Patents

히트 싱크 및 히트 싱크의 제조 방법 Download PDF

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Publication number
KR20100105734A
KR20100105734A KR1020107016429A KR20107016429A KR20100105734A KR 20100105734 A KR20100105734 A KR 20100105734A KR 1020107016429 A KR1020107016429 A KR 1020107016429A KR 20107016429 A KR20107016429 A KR 20107016429A KR 20100105734 A KR20100105734 A KR 20100105734A
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South Korea
Prior art keywords
heat sink
main extension
preliminary body
amount
composite
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KR1020107016429A
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English (en)
Korean (ko)
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마티아스 레온하르트
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로베르트 보쉬 게엠베하
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Publication of KR20100105734A publication Critical patent/KR20100105734A/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
    • C04B41/51—Metallising, e.g. infiltration of sintered ceramic preforms with molten metal
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C32/00—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ
    • C22C32/001—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with only oxides
    • C22C32/0015—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with only oxides with only single oxides as main non-metallic constituents
    • C22C32/0021—Matrix based on noble metals, Cu or alloys thereof
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C32/00—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ
    • C22C32/001—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with only oxides
    • C22C32/0015—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with only oxides with only single oxides as main non-metallic constituents
    • C22C32/0036—Matrix based on Al, Mg, Be or alloys thereof
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C32/00—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ
    • C22C32/0047—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with carbides, nitrides, borides or silicides as the main non-metallic constituents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2999/00—Aspects linked to processes or compositions used in powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2111/00—Mortars, concrete or artificial stone or mixtures to prepare them, characterised by specific function, property or use
    • C04B2111/00241—Physical properties of the materials not provided for elsewhere in C04B2111/00
    • C04B2111/00405—Materials with a gradually increasing or decreasing concentration of ingredients or property from one layer to another
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2111/00—Mortars, concrete or artificial stone or mixtures to prepare them, characterised by specific function, property or use
    • C04B2111/00439—Physico-chemical properties of the materials not provided for elsewhere in C04B2111/00
    • C04B2111/00465—Heat conducting materials
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2111/00—Mortars, concrete or artificial stone or mixtures to prepare them, characterised by specific function, property or use
    • C04B2111/00474—Uses not provided for elsewhere in C04B2111/00
    • C04B2111/00844—Uses not provided for elsewhere in C04B2111/00 for electronic applications
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/4935—Heat exchanger or boiler making

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Structural Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Cooling Or The Like Of Electrical Apparatus (AREA)
KR1020107016429A 2008-01-22 2008-11-27 히트 싱크 및 히트 싱크의 제조 방법 KR20100105734A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102008005529.8 2008-01-22
DE102008005529A DE102008005529A1 (de) 2008-01-22 2008-01-22 Kühlkörper und Verfahren zur Herstellung eines Kühlkörpers

Publications (1)

Publication Number Publication Date
KR20100105734A true KR20100105734A (ko) 2010-09-29

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ID=40433955

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020107016429A KR20100105734A (ko) 2008-01-22 2008-11-27 히트 싱크 및 히트 싱크의 제조 방법

Country Status (8)

Country Link
US (1) US20100282459A1 (de)
EP (1) EP2248166A1 (de)
JP (1) JP2011510502A (de)
KR (1) KR20100105734A (de)
CN (1) CN101925999A (de)
DE (1) DE102008005529A1 (de)
TW (1) TW200947643A (de)
WO (1) WO2009092480A1 (de)

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DE102010001565A1 (de) * 2010-02-04 2011-08-04 Robert Bosch GmbH, 70469 Leistungsmodul mit einer Schaltungsanordnung, elektrische/elektronische Schaltungsanordnung, Verfahren zur Herstellung eines Leistungsmoduls
JP5732798B2 (ja) * 2010-09-29 2015-06-10 住友大阪セメント株式会社 セラミック部材
US9324630B2 (en) * 2012-02-14 2016-04-26 Mitsubishi Electric Corporation Semiconductor device
TWM441213U (en) * 2012-04-12 2012-11-11 Jin-Huan Ni The porous heat dissipation module
CN104703442A (zh) * 2012-06-28 2015-06-10 蔡州 一种高效散热装置
DE102012213066B3 (de) * 2012-07-25 2013-09-05 Conti Temic Microelectronic Gmbh Kühlvorrichtung und Verfahren zum Herstellen einer Kühlvorrichtung sowie Schaltungsanordnung mit einer Kühlvorrichtung
CN104764350B (zh) * 2014-01-08 2017-04-26 江苏格业新材料科技有限公司 一种泡沫铜为吸液芯的均热板制造方法
JP6405758B2 (ja) * 2014-07-11 2018-10-17 株式会社デンソー 熱伝導部材
DE102014216994B4 (de) * 2014-08-26 2018-12-06 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Herstellung eines Temperierelements sowie mit dem Verfahren hergestelltes Temperierelement
DE102015215571A1 (de) * 2015-08-14 2017-02-16 Siemens Aktiengesellschaft Kühlkörper für eine elektronische Komponente und Verfahren zu dessen Herstellung
JP2017041479A (ja) * 2015-08-18 2017-02-23 セイコーエプソン株式会社 接合体、電子装置、プロジェクターおよび接合体の製造方法
DE102016115183A1 (de) * 2016-08-16 2018-02-22 Heraeus Sensor Technology Gmbh Poröses Material, Pulver zur Herstellung eines porösen Materials, Verfahren zur Herstellung eines porösen Materials und Bauteil
DE102018221160A1 (de) * 2018-12-06 2020-06-10 Siemens Aktiengesellschaft Isolierkeramik für elektrische Schaltungen und zugehörige Anwendungen
US11508641B2 (en) * 2019-02-01 2022-11-22 Toyota Motor Engineering & Manufacturing North America, Inc. Thermally conductive and electrically insulative material

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JP2924177B2 (ja) * 1990-11-30 1999-07-26 株式会社村田製作所 傾斜機能型回路用基板
US5570502A (en) * 1991-04-08 1996-11-05 Aluminum Company Of America Fabricating metal matrix composites containing electrical insulators
WO2004074210A1 (ja) * 1992-07-03 2004-09-02 Masanori Hirano セラミックス－金属複合体およびその製造方法
JPH08501500A (ja) * 1992-09-17 1996-02-20 エー． リットランド，マーカス セラミック−金属複合材の製造方法
US5886407A (en) 1993-04-14 1999-03-23 Frank J. Polese Heat-dissipating package for microcircuit devices
US5533257A (en) * 1994-05-24 1996-07-09 Motorola, Inc. Method for forming a heat dissipation apparatus
JP3259608B2 (ja) * 1995-09-27 2002-02-25 日産自動車株式会社 自動車用荷室艤装装置
US5981085A (en) * 1996-03-21 1999-11-09 The Furukawa Electric Co., Inc. Composite substrate for heat-generating semiconductor device and semiconductor apparatus using the same
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JPH1129379A (ja) 1997-02-14 1999-02-02 Ngk Insulators Ltd 半導体ヒートシンク用複合材料及びその製造方法
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JP2000294888A (ja) * 1999-04-01 2000-10-20 Kyocera Corp 放熱配線基板
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Also Published As

Publication number Publication date
CN101925999A (zh) 2010-12-22
TW200947643A (en) 2009-11-16
DE102008005529A1 (de) 2009-07-23
US20100282459A1 (en) 2010-11-11
JP2011510502A (ja) 2011-03-31
EP2248166A1 (de) 2010-11-10
WO2009092480A1 (de) 2009-07-30

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