KR20080023652A - 탄성파 디바이스 및 필터 - Google Patents
탄성파 디바이스 및 필터 Download PDFInfo
- Publication number
- KR20080023652A KR20080023652A KR1020070091489A KR20070091489A KR20080023652A KR 20080023652 A KR20080023652 A KR 20080023652A KR 1020070091489 A KR1020070091489 A KR 1020070091489A KR 20070091489 A KR20070091489 A KR 20070091489A KR 20080023652 A KR20080023652 A KR 20080023652A
- Authority
- KR
- South Korea
- Prior art keywords
- dielectric
- acoustic wave
- oxide film
- wave device
- filter
- Prior art date
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 42
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 42
- 239000000758 substrate Substances 0.000 claims abstract description 39
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 28
- 239000003989 dielectric material Substances 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 10
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 8
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 claims description 5
- 230000008878 coupling Effects 0.000 description 23
- 238000010168 coupling process Methods 0.000 description 23
- 238000005859 coupling reaction Methods 0.000 description 23
- 230000008859 change Effects 0.000 description 21
- 230000009977 dual effect Effects 0.000 description 10
- 238000010586 diagram Methods 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 238000010897 surface acoustic wave method Methods 0.000 description 4
- 239000010949 copper Substances 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 238000004886 process control Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
- H03H9/02559—Characteristics of substrate, e.g. cutting angles of lithium niobate or lithium-tantalate substrates
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/0023—Balance-unbalance or balance-balance networks
- H03H9/0028—Balance-unbalance or balance-balance networks using surface acoustic wave devices
- H03H9/0033—Balance-unbalance or balance-balance networks using surface acoustic wave devices having one acoustic track only
- H03H9/0038—Balance-unbalance or balance-balance networks using surface acoustic wave devices having one acoustic track only the balanced terminals being on the same side of the track
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/0222—Details of interface-acoustic, boundary, pseudo-acoustic or Stonely wave devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
- H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
- H03H9/6423—Means for obtaining a particular transfer characteristic
- H03H9/6433—Coupled resonator filters
- H03H9/644—Coupled resonator filters having two acoustic tracks
- H03H9/6456—Coupled resonator filters having two acoustic tracks being electrically coupled
- H03H9/6469—Coupled resonator filters having two acoustic tracks being electrically coupled via two connecting electrodes
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
Description
Claims (10)
- 압전 기판과,상기 압전 기판 상에 형성된 제1 유전체와,상기 제1 유전체 상에 형성된 탄성파를 여진하는 전극과,상기 전극을 덮도록 형성된 상기 전극의 막 두께보다 두꺼운 막 두께를 갖는 제2 유전체를 구비하는 것을 특징으로 하는 탄성파 디바이스.
- 제1항에 있어서,상기 제2 유전체 상에 제3 유전체를 구비하고,상기 제3 유전체의 음속이 상기 제2 유전체의 음속보다 빠른 것을 특징으로 하는 탄성파 디바이스.
- 제1항 또는 제2항에 있어서,상기 제2 유전체는 산화실리콘막인 것을 특징으로 하는 탄성파 디바이스.
- 제1항 또는 제2항에 있어서,상기 제1 유전체의 유전률의 온도 계수가 상기 압전 기판의 유전률의 온도 계수보다 작은 것을 특징으로 하는 탄성파 디바이스.
- 제1항 또는 제2항에 있어서,상기 제1 유전체는 산화실리콘막인 것을 특징으로 하는 탄성파 디바이스.
- 제1항 또는 제2항에 있어서,상기 제1 유전체의 비유전률이 산화실리콘막의 비유전률보다 큰 것을 특징으로 하는 탄성파 디바이스.
- 제6항에 있어서,상기 제1 유전체는 산화알루미늄막인 것을 특징으로 하는 탄성파 디바이스.
- 제2항에 있어서,상기 제3 유전체는 산화알루미늄막인 것을 특징으로 하는 탄성파 디바이스.
- 제1항, 제2항, 또는 제8항 중 어느 한 항에 있어서,상기 압전 기판은 니오브산리튬 또는 탄탈산리튬 중 어느 하나인 것을 특징으로 하는 탄성파 디바이스.
- 제1항, 제2항, 또는 제8항 중 어느 한 항에 따른 탄성파 디바이스를 갖는 것을 특징으로 하는 필터.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006245596A JP2008067289A (ja) | 2006-09-11 | 2006-09-11 | 弾性波デバイスおよびフィルタ |
JPJP-P-2006-00245596 | 2006-09-11 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20080023652A true KR20080023652A (ko) | 2008-03-14 |
KR100890845B1 KR100890845B1 (ko) | 2009-03-27 |
Family
ID=39168840
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020070091489A KR100890845B1 (ko) | 2006-09-11 | 2007-09-10 | 탄성파 디바이스 및 필터 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7564174B2 (ko) |
JP (1) | JP2008067289A (ko) |
KR (1) | KR100890845B1 (ko) |
CN (1) | CN101145767B (ko) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9154110B2 (en) | 2012-03-23 | 2015-10-06 | Samsung Electronics Co., Ltd. | Radio frequency (RF) filter and RF transceiver using bulk acoustic wave resonator (BAWR) |
KR20190096425A (ko) * | 2017-02-22 | 2019-08-19 | 가부시키가이샤 무라타 세이사쿠쇼 | 탄성표면파 소자 |
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JP2008078739A (ja) * | 2006-09-19 | 2008-04-03 | Fujitsu Media Device Kk | 弾性波デバイスおよびフィルタ |
DE112007002083B4 (de) * | 2006-09-21 | 2018-05-30 | Murata Manufacturing Co., Ltd. | Grenzflächenschallwellenvorrichtung |
US8154171B2 (en) | 2007-10-23 | 2012-04-10 | Panasonic Corporation | Boundary acoustic wave device |
JP4995923B2 (ja) * | 2007-11-19 | 2012-08-08 | 太陽誘電株式会社 | 弾性境界波デバイス、およびそれを用いた通信機 |
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JP5156448B2 (ja) * | 2008-03-24 | 2013-03-06 | 太陽誘電株式会社 | 弾性波素子、フィルタ、通信モジュール、および通信装置 |
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JP2010045533A (ja) | 2008-08-11 | 2010-02-25 | Fujitsu Ltd | 弾性波デバイスの製造方法 |
US8508100B2 (en) * | 2008-11-04 | 2013-08-13 | Samsung Electronics Co., Ltd. | Surface acoustic wave element, surface acoustic wave device and methods for manufacturing the same |
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US8044553B2 (en) * | 2010-02-22 | 2011-10-25 | Triquint Semiconductor, Inc. | Temperature compensated surface acoustic wave device and method having buried interdigital transducers for providing an improved insertion loss and quality factor |
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KR20160065113A (ko) * | 2013-10-09 | 2016-06-08 | 스카이워크스 파나소닉 필터 솔루션즈 재팬 씨오., 엘티디. | 탄성파 소자와, 이것을 사용한 듀플렉서, 전자 기기 |
CN106031034B (zh) * | 2014-03-31 | 2018-09-14 | 株式会社村田制作所 | 弹性波装置 |
US10284176B1 (en) * | 2015-06-03 | 2019-05-07 | Qorvo Us, Inc. | Temperature compensated surface acoustic wave device and methods of manufacturing the same |
WO2017154260A1 (ja) * | 2016-03-08 | 2017-09-14 | 株式会社村田製作所 | 弾性波装置及びデュプレクサ |
JP6556103B2 (ja) | 2016-06-28 | 2019-08-07 | 太陽誘電株式会社 | 弾性波デバイスの製造方法及び弾性波デバイス |
WO2018097203A1 (ja) | 2016-11-25 | 2018-05-31 | 株式会社村田製作所 | 弾性波フィルタ装置、マルチプレクサ、高周波フロントエンド回路および通信装置 |
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JP2019145886A (ja) * | 2018-02-16 | 2019-08-29 | 株式会社村田製作所 | 弾性波装置、高周波フロントエンド回路及び通信装置 |
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2006
- 2006-09-11 JP JP2006245596A patent/JP2008067289A/ja active Pending
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2007
- 2007-09-10 KR KR1020070091489A patent/KR100890845B1/ko active IP Right Grant
- 2007-09-11 CN CN2007101492874A patent/CN101145767B/zh active Active
- 2007-09-11 US US11/898,359 patent/US7564174B2/en active Active
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9154110B2 (en) | 2012-03-23 | 2015-10-06 | Samsung Electronics Co., Ltd. | Radio frequency (RF) filter and RF transceiver using bulk acoustic wave resonator (BAWR) |
KR20190096425A (ko) * | 2017-02-22 | 2019-08-19 | 가부시키가이샤 무라타 세이사쿠쇼 | 탄성표면파 소자 |
US11863155B2 (en) | 2017-02-22 | 2024-01-02 | Murata Manufacturing Co., Ltd. | Surface acoustic wave element |
Also Published As
Publication number | Publication date |
---|---|
CN101145767B (zh) | 2011-11-16 |
CN101145767A (zh) | 2008-03-19 |
US20080061657A1 (en) | 2008-03-13 |
JP2008067289A (ja) | 2008-03-21 |
KR100890845B1 (ko) | 2009-03-27 |
US7564174B2 (en) | 2009-07-21 |
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