KR20080015273A - 저유전율 저손실의 열경화성 복합 수지 조성물 - Google Patents
저유전율 저손실의 열경화성 복합 수지 조성물 Download PDFInfo
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- KR20080015273A KR20080015273A KR1020060076775A KR20060076775A KR20080015273A KR 20080015273 A KR20080015273 A KR 20080015273A KR 1020060076775 A KR1020060076775 A KR 1020060076775A KR 20060076775 A KR20060076775 A KR 20060076775A KR 20080015273 A KR20080015273 A KR 20080015273A
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- C—CHEMISTRY; METALLURGY
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- C08L71/00—Compositions of polyethers obtained by reactions forming an ether link in the main chain; Compositions of derivatives of such polymers
- C08L71/08—Polyethers derived from hydroxy compounds or from their metallic derivatives
- C08L71/10—Polyethers derived from hydroxy compounds or from their metallic derivatives from phenols
- C08L71/12—Polyphenylene oxides
- C08L71/123—Polyphenylene oxides not modified by chemical after-treatment
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- C08K5/00—Use of organic ingredients
- C08K5/16—Nitrogen-containing compounds
- C08K5/34—Heterocyclic compounds having nitrogen in the ring
- C08K5/3467—Heterocyclic compounds having nitrogen in the ring having more than two nitrogen atoms in the ring
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- C08K5/3492—Triazines
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- C08L25/00—Compositions of, homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring; Compositions of derivatives of such polymers
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- C08L25/04—Homopolymers or copolymers of styrene
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- C08L25/00—Compositions of, homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring; Compositions of derivatives of such polymers
- C08L25/02—Homopolymers or copolymers of hydrocarbons
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- H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
- H01B3/18—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
- H01B3/30—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes
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- C08J2371/00—Characterised by the use of polyethers obtained by reactions forming an ether link in the main chain; Derivatives of such polymers
- C08J2371/08—Polyethers derived from hydroxy compounds or from their metallic derivatives
- C08J2371/10—Polyethers derived from hydroxy compounds or from their metallic derivatives from phenols
- C08J2371/12—Polyphenylene oxides
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- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2425/00—Characterised by the use of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring; Derivatives of such polymers
- C08J2425/02—Homopolymers or copolymers of hydrocarbons
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- C08J2425/06—Polystyrene
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- C08L2312/00—Crosslinking
Abstract
Description
Claims (6)
- 폴리페닐렌옥사이드(PPO)와 폴리스티렌(PS)이 6:4 내지 8:2 의 중량비율로 혼합된 모수지;상기 모수지에 대하여 1:9 내지 3:7의 중량비율에 해당하는 양의 가교제;상기 모수지에 대하여 1:10 내지 1:5의 중량비율에 해당하는 양의 첨가제; 및상기 가교제에 대하여 1:20 내지 1:5의 중량비율에 해당하는 양의 개시제가 포함된 저유전율 저손실의 열경화성 복합 수지 조성물.
- 제1항에 있어서, 상기 가교제는 상기 모수지에 대하여 2:8의 중량비율에 해당하는 양으로 포함되는 열가교성 수지로써, TAIC(Triallyl isocyanurate), 아크릴계 가교제 또는 TMPTM(Trimethylolpropanetrimethacrylate)인 것을 특징으로 하는 저유전율 저손실의 열경화성 복합 수지 조성물.
- 제1항에 있어서, 상기 첨가제는 상기 모수지에 대하여 1:10 또는 1:5의 중량비율에 해당하는 양으로 포함되는 스티렌계의 공중합체로써, SBS(styren-butadiene-styren)인 것을 특징으로 하는 저유전율 저손실의 열경화성 복합 수지 조성물.
- 제1항에 있어서, 상기 개시제는 상기 가교제에 대하여 1:20, 1:10 또는 1:5의 중량비율에 해당하는 양으로 포함되는 과산화물계 촉진제로써, TBPB(Tert-butyl peroxybenzoate)인 것을 특징으로 하는 저유전율 저손실의 열경화성 복합 수지 조성물.
- 폴리페닐렌옥사이드(PPO)와 폴리스티렌(PS)이 6:4 내지 8:2 의 중량비율로 혼합된 모수지;상기 모수지에 대하여 1:9 내지 3:7의 중량비율에 해당하는 양의 TAIC(Triallyl isocyanurate), 아크릴계 가교제 또는 TMPTM(Trimethylolpropanetrimethacrylate);상기 모수지에 대하여 1:10 내지 1:5의 중량비율에 해당하는 양의 SBS(styren-butadiene-styren); 및상기 가교제에 대하여 1:20 내지 1:5의 중량비율에 해당하는 양의 TBPB(Tert-butyl peroxybenzoate)가 포함되어 이루어진 것으로써, 고주파 대역에 적합한 전송 특성을 가지는 저유전율 저손실의 열경화성 복합 수지 조성물.
- 제1항 내지 제5항 중 어느 한 항에 따른 열경화성 복합 수지 조성물과 섬유재를 포함하는 것을 특징으로 하는 프리프레그.
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KR1020060076775A KR100832803B1 (ko) | 2006-08-14 | 2006-08-14 | 저유전율 저손실의 열경화성 복합 수지 조성물 |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100954996B1 (ko) * | 2008-05-30 | 2010-04-27 | 전자부품연구원 | 저유전손실 복합수지 조성물 |
CN102161823A (zh) * | 2010-07-14 | 2011-08-24 | 广东生益科技股份有限公司 | 复合材料、用其制作的高频电路基板及其制作方法 |
CN116080211A (zh) * | 2022-10-14 | 2023-05-09 | 江苏耀鸿电子有限公司 | 一种低介电损耗的ppo树脂基覆铜板及其制备方法 |
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Publication number | Priority date | Publication date | Assignee | Title |
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JP3151397B2 (ja) * | 1995-10-26 | 2001-04-03 | 松下電工株式会社 | プリプレグ及び金属箔張り積層板 |
JPH09246429A (ja) * | 1996-03-13 | 1997-09-19 | Asahi Chem Ind Co Ltd | 半導体装置およびその製造方法 |
TW548683B (en) * | 2001-10-23 | 2003-08-21 | Toray Industries | Dielectric paste and manufacturing method of plasma display |
JP2003160662A (ja) | 2001-11-27 | 2003-06-03 | Matsushita Electric Works Ltd | ポリフェニレンオキサイドの製造方法、ポリフェニレンオキサイド樹脂組成物、プリプレグ、積層板、プリント配線板及び多層プリント配線板 |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100954996B1 (ko) * | 2008-05-30 | 2010-04-27 | 전자부품연구원 | 저유전손실 복합수지 조성물 |
CN102161823A (zh) * | 2010-07-14 | 2011-08-24 | 广东生益科技股份有限公司 | 复合材料、用其制作的高频电路基板及其制作方法 |
CN102161823B (zh) * | 2010-07-14 | 2012-09-26 | 广东生益科技股份有限公司 | 复合材料、用其制作的高频电路基板及其制作方法 |
CN116080211A (zh) * | 2022-10-14 | 2023-05-09 | 江苏耀鸿电子有限公司 | 一种低介电损耗的ppo树脂基覆铜板及其制备方法 |
CN116080211B (zh) * | 2022-10-14 | 2023-12-29 | 江苏耀鸿电子有限公司 | 一种低介电损耗的ppo树脂基覆铜板及其制备方法 |
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