KR20070101367A - 포지티브형 레지스트 조성물 및 레지스트 패턴 형성 방법 - Google Patents
포지티브형 레지스트 조성물 및 레지스트 패턴 형성 방법 Download PDFInfo
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- KR20070101367A KR20070101367A KR1020077019784A KR20077019784A KR20070101367A KR 20070101367 A KR20070101367 A KR 20070101367A KR 1020077019784 A KR1020077019784 A KR 1020077019784A KR 20077019784 A KR20077019784 A KR 20077019784A KR 20070101367 A KR20070101367 A KR 20070101367A
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- 0 *C(CC(*1)(C2)C1(C1)O)SC21OCl=O Chemical compound *C(CC(*1)(C2)C1(C1)O)SC21OCl=O 0.000 description 1
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
- C08F212/02—Monomers containing only one unsaturated aliphatic radical
- C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
- C08F212/14—Monomers containing only one unsaturated aliphatic radical containing one ring substituted by heteroatoms or groups containing heteroatoms
- C08F212/22—Oxygen
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
- C08F212/02—Monomers containing only one unsaturated aliphatic radical
- C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
- C08F212/14—Monomers containing only one unsaturated aliphatic radical containing one ring substituted by heteroatoms or groups containing heteroatoms
- C08F212/22—Oxygen
- C08F212/24—Phenols or alcohols
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
- C08F212/02—Monomers containing only one unsaturated aliphatic radical
- C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
- C08F212/14—Monomers containing only one unsaturated aliphatic radical containing one ring substituted by heteroatoms or groups containing heteroatoms
- C08F212/30—Sulfur
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/12—Esters of monohydric alcohols or phenols
- C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
- C08F220/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
- C08F220/28—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
- C08F220/283—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety and containing one or more carboxylic moiety in the chain, e.g. acetoacetoxyethyl(meth)acrylate
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F228/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a bond to sulfur or by a heterocyclic ring containing sulfur
- C08F228/02—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a bond to sulfur or by a heterocyclic ring containing sulfur by a bond to sulfur
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
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- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Organic Chemistry (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Emergency Medicine (AREA)
- Materials For Photolithography (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
Abstract
Description
세퍼레이트 마진 | LER | 형상 | |
실시예 1 | 30.6% | 4.2㎚ | ○ |
실시예 2 | 30.6% | 3.9㎚ | ○ |
실시예 3 | 30.6% | 4.3㎚ | ○ |
비교예 1 | 27.8% | 5.1㎚ | ○ |
비교예 2 | 28.6% | 4.9㎚ | × |
Claims (6)
- 산의 작용에 의해 알칼리 가용성이 증대하는 수지 성분 (A) 와, 노광에 의해 산을 발생시키는 산 발생제 성분 (B) 을 함유하는 포지티브형 레지스트 조성물로서,상기 수지 성분 (A) 이 히드록시스티렌으로부터 유도되는 제 1 구성 단위 (a1) 와, 알코올성 수산기를 갖는 (메트)아크릴산에스테르로부터 유도되는 제 2 구성 단위 (a2) 와, 히드록시스티렌으로부터 유도되는 구성 단위의 수산기가 산 해리성 용해 억제기로 보호된 제 3 구성 단위 (a3) 및/또는 알코올성 수산기를 갖는 (메트)아크릴산에스테르로부터 유도되는 구성 단위의 알코올성 수산기가 산 해리성 용해 억제기로 보호된 제 4 구성 단위 (a4) 를 갖는 제 1 수지 성분 (A1) 과,히드록시스티렌으로부터 유도되는 제 5 구성 단위 (a5) 와, 히드록시스티렌으로부터 유도되는 구성 단위의 수산기가 산 해리성 용해 억제기로 보호된 제 6 구성 단위 (a6) 를 갖는 제 2 수지 성분 (A2) 을 함유하는 것을 특징으로 하는 포지티브형 레지스트 조성물.
- 제 1 항에 있어서,상기 제 1 수지 성분 (A1) 과 제 2 수지 성분 (A2) 의 질량비가 (A1):(A2)=9:1∼1:9 인 포지티브형 레지스트 조성물.
- 제 1 항 또는 제 2 항에 있어서,상기 산 발생제 성분 (B) 이 디아조메탄계 산 발생제 및/또는 오늄염계 산 발생제를 함유하는 포지티브형 레지스트 조성물.
- 제 1 항 또는 제 2 항에 있어서,추가로, 질소 함유 유기 화합물 (D) 을 함유하는 포지티브형 레지스트 조성물.
- 제 1 항 또는 제 2 항에 있어서,추가로, 용해 억제제 (C) 를 함유하는 포지티브형 레지스트 조성물.
- 제 1 항 또는 제 2 항에 기재된 포지티브형 레지스트 조성물을 이용하여 기판 상에 레지스트막을 형성하는 공정, 상기 레지스트막을 노광하는 공정, 상기 레지스트막을 현상하여 레지스트 패턴을 형성하는 공정을 포함하는 레지스트 패턴 형성 방법.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005060518A JP4184352B2 (ja) | 2005-03-04 | 2005-03-04 | ポジ型レジスト組成物及びレジストパターン形成方法 |
JPJP-P-2005-00060518 | 2005-03-04 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20070101367A true KR20070101367A (ko) | 2007-10-16 |
KR100881304B1 KR100881304B1 (ko) | 2009-02-03 |
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ID=36953142
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR1020077019784A KR100881304B1 (ko) | 2005-03-04 | 2006-02-14 | 포지티브형 레지스트 조성물 및 레지스트 패턴 형성 방법 |
Country Status (4)
Country | Link |
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JP (1) | JP4184352B2 (ko) |
KR (1) | KR100881304B1 (ko) |
TW (1) | TWI302639B (ko) |
WO (1) | WO2006095540A1 (ko) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101458469B (zh) * | 2007-12-14 | 2012-07-04 | 株式会社理光 | 电子照相图像形成方法以及装置 |
JP5844613B2 (ja) * | 2010-11-17 | 2016-01-20 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC | 感光性コポリマーおよびフォトレジスト組成物 |
JP6274205B2 (ja) | 2013-04-23 | 2018-02-07 | 三菱瓦斯化学株式会社 | 新規脂環式エステル化合物、(メタ)アクリル共重合体およびそれを含む感光性樹脂組成物 |
KR102142648B1 (ko) | 2013-12-16 | 2020-08-10 | 삼성디스플레이 주식회사 | 감광성 수지 조성물, 이를 이용한 유기막 형성방법 및 유기막을 포함하는 표시장치 |
KR102281960B1 (ko) | 2014-01-31 | 2021-07-26 | 미츠비시 가스 가가쿠 가부시키가이샤 | (메트)아크릴레이트 화합물, (메트)아크릴 공중합체 및 그것을 함유하는 감광성 수지 조성물 |
CN105980347B (zh) | 2014-02-14 | 2019-08-16 | 三菱瓦斯化学株式会社 | 新型脂环式酯化合物的制造方法、新型脂环式酯化合物、将其聚合的(甲基)丙烯酸系共聚物、和包含其的感光性树脂组合物 |
JP5802785B2 (ja) * | 2014-03-24 | 2015-11-04 | 富士フイルム株式会社 | パターン形成方法及びレジスト組成物 |
Family Cites Families (9)
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JP3587413B2 (ja) * | 1995-12-20 | 2004-11-10 | 東京応化工業株式会社 | 化学増幅型レジスト組成物及びそれに用いる酸発生剤 |
JP4069497B2 (ja) * | 1998-06-10 | 2008-04-02 | Jsr株式会社 | 感放射線性樹脂組成物 |
JP3757731B2 (ja) * | 1999-01-28 | 2006-03-22 | 住友化学株式会社 | レジスト組成物 |
JP3785846B2 (ja) * | 1999-02-05 | 2006-06-14 | 住友化学株式会社 | 化学増幅型ポジ型レジスト組成物 |
JP4178645B2 (ja) * | 1999-02-09 | 2008-11-12 | Jsr株式会社 | 感放射線性樹脂組成物 |
JP4329214B2 (ja) * | 2000-03-28 | 2009-09-09 | 住友化学株式会社 | 化学増幅型ポジ型レジスト組成物 |
US7666569B2 (en) * | 2002-12-26 | 2010-02-23 | Tokyo Ohka Kogyo Co., Ltd. | Positive resist composition and method for forming resist pattern |
JP4152810B2 (ja) * | 2003-06-13 | 2008-09-17 | 東京応化工業株式会社 | ポジ型レジスト組成物およびレジストパターン形成方法 |
TWI316645B (en) * | 2003-09-18 | 2009-11-01 | Tokyo Ohka Kogyo Co Ltd | Positive resist composition and resist pattern formation method |
-
2005
- 2005-03-04 JP JP2005060518A patent/JP4184352B2/ja active Active
-
2006
- 2006-02-14 TW TW095104927A patent/TWI302639B/zh active
- 2006-02-14 WO PCT/JP2006/302558 patent/WO2006095540A1/ja active Application Filing
- 2006-02-14 KR KR1020077019784A patent/KR100881304B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
WO2006095540A1 (ja) | 2006-09-14 |
KR100881304B1 (ko) | 2009-02-03 |
JP2006243474A (ja) | 2006-09-14 |
JP4184352B2 (ja) | 2008-11-19 |
TWI302639B (en) | 2008-11-01 |
TW200643627A (en) | 2006-12-16 |
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