JP4184352B2 - ポジ型レジスト組成物及びレジストパターン形成方法 - Google Patents
ポジ型レジスト組成物及びレジストパターン形成方法 Download PDFInfo
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- JP4184352B2 JP4184352B2 JP2005060518A JP2005060518A JP4184352B2 JP 4184352 B2 JP4184352 B2 JP 4184352B2 JP 2005060518 A JP2005060518 A JP 2005060518A JP 2005060518 A JP2005060518 A JP 2005060518A JP 4184352 B2 JP4184352 B2 JP 4184352B2
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- 0 C*C(CC*)c(cc1)ccc1O Chemical compound C*C(CC*)c(cc1)ccc1O 0.000 description 4
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
- C08F212/02—Monomers containing only one unsaturated aliphatic radical
- C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
- C08F212/14—Monomers containing only one unsaturated aliphatic radical containing one ring substituted by heteroatoms or groups containing heteroatoms
- C08F212/22—Oxygen
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
- C08F212/02—Monomers containing only one unsaturated aliphatic radical
- C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
- C08F212/14—Monomers containing only one unsaturated aliphatic radical containing one ring substituted by heteroatoms or groups containing heteroatoms
- C08F212/22—Oxygen
- C08F212/24—Phenols or alcohols
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
- C08F212/02—Monomers containing only one unsaturated aliphatic radical
- C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
- C08F212/14—Monomers containing only one unsaturated aliphatic radical containing one ring substituted by heteroatoms or groups containing heteroatoms
- C08F212/30—Sulfur
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/12—Esters of monohydric alcohols or phenols
- C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
- C08F220/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
- C08F220/28—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
- C08F220/283—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety and containing one or more carboxylic moiety in the chain, e.g. acetoacetoxyethyl(meth)acrylate
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F228/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a bond to sulfur or by a heterocyclic ring containing sulfur
- C08F228/02—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a bond to sulfur or by a heterocyclic ring containing sulfur by a bond to sulfur
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Organic Chemistry (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Emergency Medicine (AREA)
- Materials For Photolithography (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005060518A JP4184352B2 (ja) | 2005-03-04 | 2005-03-04 | ポジ型レジスト組成物及びレジストパターン形成方法 |
PCT/JP2006/302558 WO2006095540A1 (ja) | 2005-03-04 | 2006-02-14 | ポジ型レジスト組成物及びレジストパターン形成方法 |
TW095104927A TWI302639B (en) | 2005-03-04 | 2006-02-14 | Positive resist composition and process for forming resist pattern |
KR1020077019784A KR100881304B1 (ko) | 2005-03-04 | 2006-02-14 | 포지티브형 레지스트 조성물 및 레지스트 패턴 형성 방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005060518A JP4184352B2 (ja) | 2005-03-04 | 2005-03-04 | ポジ型レジスト組成物及びレジストパターン形成方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006243474A JP2006243474A (ja) | 2006-09-14 |
JP4184352B2 true JP4184352B2 (ja) | 2008-11-19 |
Family
ID=36953142
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005060518A Active JP4184352B2 (ja) | 2005-03-04 | 2005-03-04 | ポジ型レジスト組成物及びレジストパターン形成方法 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP4184352B2 (ko) |
KR (1) | KR100881304B1 (ko) |
TW (1) | TWI302639B (ko) |
WO (1) | WO2006095540A1 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101458469B (zh) * | 2007-12-14 | 2012-07-04 | 株式会社理光 | 电子照相图像形成方法以及装置 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5844613B2 (ja) * | 2010-11-17 | 2016-01-20 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC | 感光性コポリマーおよびフォトレジスト組成物 |
JP6274205B2 (ja) | 2013-04-23 | 2018-02-07 | 三菱瓦斯化学株式会社 | 新規脂環式エステル化合物、(メタ)アクリル共重合体およびそれを含む感光性樹脂組成物 |
KR102142648B1 (ko) | 2013-12-16 | 2020-08-10 | 삼성디스플레이 주식회사 | 감광성 수지 조성물, 이를 이용한 유기막 형성방법 및 유기막을 포함하는 표시장치 |
KR102281960B1 (ko) | 2014-01-31 | 2021-07-26 | 미츠비시 가스 가가쿠 가부시키가이샤 | (메트)아크릴레이트 화합물, (메트)아크릴 공중합체 및 그것을 함유하는 감광성 수지 조성물 |
CN105980347B (zh) | 2014-02-14 | 2019-08-16 | 三菱瓦斯化学株式会社 | 新型脂环式酯化合物的制造方法、新型脂环式酯化合物、将其聚合的(甲基)丙烯酸系共聚物、和包含其的感光性树脂组合物 |
JP5802785B2 (ja) * | 2014-03-24 | 2015-11-04 | 富士フイルム株式会社 | パターン形成方法及びレジスト組成物 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3587413B2 (ja) * | 1995-12-20 | 2004-11-10 | 東京応化工業株式会社 | 化学増幅型レジスト組成物及びそれに用いる酸発生剤 |
JP4069497B2 (ja) * | 1998-06-10 | 2008-04-02 | Jsr株式会社 | 感放射線性樹脂組成物 |
JP3757731B2 (ja) * | 1999-01-28 | 2006-03-22 | 住友化学株式会社 | レジスト組成物 |
JP3785846B2 (ja) * | 1999-02-05 | 2006-06-14 | 住友化学株式会社 | 化学増幅型ポジ型レジスト組成物 |
JP4178645B2 (ja) * | 1999-02-09 | 2008-11-12 | Jsr株式会社 | 感放射線性樹脂組成物 |
JP4329214B2 (ja) * | 2000-03-28 | 2009-09-09 | 住友化学株式会社 | 化学増幅型ポジ型レジスト組成物 |
US7666569B2 (en) * | 2002-12-26 | 2010-02-23 | Tokyo Ohka Kogyo Co., Ltd. | Positive resist composition and method for forming resist pattern |
JP4152810B2 (ja) * | 2003-06-13 | 2008-09-17 | 東京応化工業株式会社 | ポジ型レジスト組成物およびレジストパターン形成方法 |
TWI316645B (en) * | 2003-09-18 | 2009-11-01 | Tokyo Ohka Kogyo Co Ltd | Positive resist composition and resist pattern formation method |
-
2005
- 2005-03-04 JP JP2005060518A patent/JP4184352B2/ja active Active
-
2006
- 2006-02-14 TW TW095104927A patent/TWI302639B/zh active
- 2006-02-14 WO PCT/JP2006/302558 patent/WO2006095540A1/ja active Application Filing
- 2006-02-14 KR KR1020077019784A patent/KR100881304B1/ko active IP Right Grant
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101458469B (zh) * | 2007-12-14 | 2012-07-04 | 株式会社理光 | 电子照相图像形成方法以及装置 |
Also Published As
Publication number | Publication date |
---|---|
KR20070101367A (ko) | 2007-10-16 |
WO2006095540A1 (ja) | 2006-09-14 |
KR100881304B1 (ko) | 2009-02-03 |
JP2006243474A (ja) | 2006-09-14 |
TWI302639B (en) | 2008-11-01 |
TW200643627A (en) | 2006-12-16 |
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