KR20060044921A - 공진자, 필터 및 공진자의 제조 방법 - Google Patents
공진자, 필터 및 공진자의 제조 방법 Download PDFInfo
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- KR20060044921A KR20060044921A KR20050025945A KR20050025945A KR20060044921A KR 20060044921 A KR20060044921 A KR 20060044921A KR 20050025945 A KR20050025945 A KR 20050025945A KR 20050025945 A KR20050025945 A KR 20050025945A KR 20060044921 A KR20060044921 A KR 20060044921A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
- H03H9/02094—Means for compensation or elimination of undesirable effects of adherence
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
- H03H9/02149—Means for compensation or elimination of undesirable effects of ageing changes of characteristics, e.g. electro-acousto-migration
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/174—Membranes
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/56—Monolithic crystal filters
- H03H9/564—Monolithic crystal filters implemented with thin-film techniques
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/56—Monolithic crystal filters
- H03H9/566—Electric coupling means therefor
- H03H9/568—Electric coupling means therefor consisting of a ladder configuration
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/023—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
- H03H2003/0414—Resonance frequency
- H03H2003/0421—Modification of the thickness of an element
- H03H2003/0428—Modification of the thickness of an element of an electrode
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
Description
Claims (19)
- 기판 주면 상에, 압전 박막의 한쪽 주면 상에 형성된 제1 전극막과, 상기 압전 박막의 다른쪽 주면 상에 형성된 제2 전극막과, 상기 제1 또는 제2 전극막 상에 형성된 주파수 조정층을 구비하고, 상기 주파수 조정층은, 상기 전극막 상에 형성된 제1 조정층과 그 제1 조정층 상에 형성된 제2 조정층의 적층막인 것을 특징으로 하는 공진자.
- 제1항에 있어서,상기 제2 조정층은, 상기 제1 조정층과는 재질을 달리하는 것을 특징으로 하는 공진자.
- 제1항에 있어서,상기 제2 조정층은, 상기 제1 조정층과는 재질을 달리하는 절연체막인 것을 특징으로 하는 공진자.
- 기판 주면 상에, 압전 박막의 한쪽 주면 상에 형성된 제1 전극막과, 상기 압전 박막의 다른쪽 주면 상에 형성된 제2 전극막과, 상기 제1 또는 제2 전극막 상에 형성된 주파수 조정층을 구비하고, 상기 주파수 조정층은 난산화성의 절연체막인 것을 특징으로 하는 공진자.
- 제1항 내지 제4항 중 어느 한 항에 있어서,상기 제1 조정층은, 서로 다른 에칭 선택성을 갖는 적어도 2종의 막이 적층되어 구성되어 있는 것을 특징으로 하는 공진자.
- 제1항 내지 제4항 중 어느 한 항에 있어서,상기 기판은 캐비티를 구비하고, 상기 주파수 조정층은 적어도 상기 캐비티 상부의 전역을 피복하도록 형성되어 있는 것을 특징으로 하는 공진자.
- 제1항 내지 제4항 중 어느 한 항에 있어서,상기 기판은 캐비티를 구비하고, 상기 주파수 조정층은 적어도 상기 캐비티 상부의 전역을 피복하도록, 상기 제1 또는 제2 전극막 상에 부분적으로 형성되어 있는 것을 특징으로 하는 공진자.
- 제6항에 있어서,상기 캐비티는 상기 기판 이면측에 형성된 공극인 것을 특징으로 하는 공진자.
- 단일 기체 상에 형성된 제1항 내지 제4항 중 어느 한 항의 공진자를 복수 조합해서 구성된 필터.
- 제9항에 있어서,상기 필터는 서로 다른 두께의 상기 주파수 조정층을 갖는 공진자를 포함하는 것을 특징으로 하는 필터.
- 제9항에 있어서,상기 필터는, 상기 복수의 공진자를 사다리형으로 조합해서 구성된 래더 필터로서, 상기 공진자 중의 병렬 접속된 공진자의 상기 주파수 조정층의 두께는, 직렬 접속된 공진자의 상기 주파수 조정층의 두께보다 큰 것을 특징으로 하는 필터.
- 제9항에 있어서,상기 필터는, 상기 복수의 공진자를 사다리형으로 조합해서 구성된 래더 필터로서, 상기 공진자 중의 병렬 접속된 공진자의 공진 주파수는, 직렬 접속된 공진자의 공진 주파수보다 저주파수로 되도록 조정되어 있는 것을 특징으로 하는 필터.
- 제9항에 있어서,상기 직렬 접속되어 있는 공진자가 구비하고 있는 제1 조정층은 단일층이고, 상기 병렬 접속되어 있는 공진자가 구비하고 있는 제1 조정층은 서로 다른 에칭 선택성을 갖는 2종의 막이 적층되어 구성되어 있는 것을 특징으로 하는 필터.
- 제9항에 있어서,상기 주파수 조정층의 막 두께에 따라서 상기 공진자의 각각의 공진 주파수 및 상기 필터의 중심 주파수가 조정되어 있는 것을 특징으로 하는 필터.
- 제9항에 있어서,상기 공진 주파수는 상기 제1 조정층의 막 두께에 의해 조정되고, 상기 중심 주파수는 상기 제2 조정층의 막 두께에 의해 조정되어 있는 것을 특징으로 하는 필터.
- 압전 박막의 한쪽 주면 상의 제1 전극막과, 상기 압전 박막의 다른쪽 주면 상의 제2 전극막과, 상기 제1 또는 제2 전극막 상에 주파수 조정층을 형성하는 제1 단계와,상기 주파수 조정층의 원하는 영역의 막 두께를 제어하여 상기 압전 박막의 공진 주파수를 조정하는 제2 단계를 구비하는 것을 특징으로 하는 공진자의 제조 방법.
- 압전 박막의 한쪽 주면 상의 제1 전극막과, 상기 압전 박막의 다른쪽 주면 상의 제2 전극막과, 상기 제1 또는 제2 전극막 상에 제1 주파수 조정층을 형성하는 제1 단계와,상기 제1 주파수 조정층의 원하는 영역의 막 두께를 제어하여 상기 압전 박 막의 제1 공진 주파수를 조정하는 제2 단계와,상기 제1 주파수 조정층 상에 제2 주파수 조정층을 형성하는 제3 단계와,상기 제2 주파수 조정층의 원하는 영역의 막 두께를 제어하여 상기 압전 박막의 제2 공진 주파수를 조정하는 제4 단계를 구비하는 것을 특징으로 하는 공진자의 제조 방법.
- 제16항 또는 제17항에 있어서,상기 주파수 조정층의 막 두께 제어는, 에칭에 의해 실행되는 것을 특징으로 하는 공진자의 제조 방법.
- 제18항에 있어서,상기 에칭은, 이온 밀링, 반응성 이온 에칭, 또는 펄스 레이저에 의해 실행되는 것을 특징으로 하는 공진자의 제조 방법.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2004-00101878 | 2004-03-31 | ||
JP2004101878A JP4223428B2 (ja) | 2004-03-31 | 2004-03-31 | フィルタおよびその製造方法 |
Publications (2)
Publication Number | Publication Date |
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KR20060044921A true KR20060044921A (ko) | 2006-05-16 |
KR100698985B1 KR100698985B1 (ko) | 2007-03-26 |
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KR20050025945A KR100698985B1 (ko) | 2004-03-31 | 2005-03-29 | 필터 및 필터의 제조 방법 |
Country Status (6)
Country | Link |
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US (1) | US7498717B2 (ko) |
EP (1) | EP1583233B1 (ko) |
JP (1) | JP4223428B2 (ko) |
KR (1) | KR100698985B1 (ko) |
CN (1) | CN100542022C (ko) |
DE (1) | DE602005011697D1 (ko) |
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KR20140030177A (ko) * | 2011-05-04 | 2014-03-11 | 에프코스 아게 | 벌크 탄성파를 이용하여 동작하는 baw-필터 |
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KR100698985B1 (ko) | 2007-03-26 |
CN1677852A (zh) | 2005-10-05 |
JP2005286945A (ja) | 2005-10-13 |
US7498717B2 (en) | 2009-03-03 |
JP4223428B2 (ja) | 2009-02-12 |
DE602005011697D1 (de) | 2009-01-29 |
EP1583233A1 (en) | 2005-10-05 |
EP1583233B1 (en) | 2008-12-17 |
CN100542022C (zh) | 2009-09-16 |
US20050218754A1 (en) | 2005-10-06 |
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