KR20060044724A - 규소 복합체 입자, 그것의 제조 방법 및 비수성 전해질 2차전지용 음극재 - Google Patents
규소 복합체 입자, 그것의 제조 방법 및 비수성 전해질 2차전지용 음극재 Download PDFInfo
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- KR20060044724A KR20060044724A KR1020050024772A KR20050024772A KR20060044724A KR 20060044724 A KR20060044724 A KR 20060044724A KR 1020050024772 A KR1020050024772 A KR 1020050024772A KR 20050024772 A KR20050024772 A KR 20050024772A KR 20060044724 A KR20060044724 A KR 20060044724A
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 230
- 239000010703 silicon Substances 0.000 title claims abstract description 225
- 239000011246 composite particle Substances 0.000 title claims abstract description 50
- -1 preparation thereof Substances 0.000 title claims description 50
- 239000007773 negative electrode material Substances 0.000 title claims description 47
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- 238000002360 preparation method Methods 0.000 title description 2
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- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical class [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 claims abstract description 34
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- 229910010272 inorganic material Inorganic materials 0.000 claims abstract description 27
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- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 claims description 13
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 13
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 13
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- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
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- 239000007784 solid electrolyte Substances 0.000 description 1
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- IIACRCGMVDHOTQ-UHFFFAOYSA-N sulfamic acid Chemical group NS(O)(=O)=O IIACRCGMVDHOTQ-UHFFFAOYSA-N 0.000 description 1
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- DGIJAZGPLFOQJE-UHFFFAOYSA-N trimethylsilyl n-trimethylsilylcarbamate Chemical compound C[Si](C)(C)NC(=O)O[Si](C)(C)C DGIJAZGPLFOQJE-UHFFFAOYSA-N 0.000 description 1
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Images
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Abstract
Description
실시예 | 비교예 | |||
1 | 2 | 3 | 1 | |
출발 물질 | 규소 | 규소 | 규소 | 규소 |
1차 입자(㎛)* | 0.8 | 1.0 | 1.0 | 0.8 |
2차 입자(㎛)* | 10 | 10 | 11 | 1 |
초기 충전 용량**(mAh/g) | 2100 | 2140 | 2185 | 2300 |
초기 효율(%) | 90 | 91 | 90 | 89 |
제50 주기에서의 유지율(%) | 83 | 85 | 84 | 4 |
실시예 | 비교예 | ||
4 | 5 | 2 | |
출발 물질 | 규소-이산화규소 복합체 | 산화규소 | 산화규소 |
1차 입자*(㎛) | 1.0 | 1.0 | 1.0 |
2차 입자*(㎛) | 10 | 10 | 1.0 |
초기 충전 용량**(mAh/g) | 930 | 910 | 780 |
초기 효율(%) | 74 | 73 | 60 |
제50 사이클에서의 유지율(%) | 93 | 94 | 15 |
실시예 6 | 비교예 3 | |
출발 물질 | 산화규소 | 산화규소 |
1차 입자*(㎛) | 1.0 | 1.0 |
2차 입자*(㎛) | 10 | 1.7 |
탄소 코팅 중량(%) | 15 | 17 |
초기 충전 용량**(mAh/g) | 910 | 850 |
초기 효율(%) | 78 | 76 |
제50 주기에서의 유지율(%) | 98 | 79 |
실시예 | 비교예 | |||
7 | 8 | 9 | 4 | |
침착된 탄소(중량%) | 0 | 0 | 14 | 15 |
초기 충전 용량*(mAh/g) | 1330 | 1370 | 1210 | 1950 |
초기 효율(%) | 92 | 90 | 89 | 91 |
제50 사이클에서의 유지율(%) | 92 | 87 | 90 | 5 |
Claims (38)
- 규소, 규소 합금 또는 산화규소의 1차 미립자를 유기규소 화합물 또는 이들의 혼합물과 함께 소결함으로써 제조되는 복합체 입자로서, 각기 규소 또는 규소 합금 미립자가 상기 무기 화합물 또는 이것의 혼합물을 소결하여 생성되고 결합제 역할을 하는 규소계 무기 화합물에 분산되고, 공극이 상기 입자에 존재하는 구조를 갖는 것을 특징으로 하는 복합체 입자.
- 제1항에 있어서, 상기 규소, 규소 합금 또는 산화규소의 1차 미립자는 100 nm 내지 10 ㎛의 크기를 가지며, 상기 규소계 무기 화합물은 Si-C-O 또는 Si-C-N 복합체, SiNx, SiOy, SiCz 또는 이들의 혼합물이고, 여기서 x, y 및 z는 0 < x ≤ 4/3, 0 < y ≤ 2 및 0 < z ≤ 1 범위인 양수인 것을 특징으로 하는 복합체 입자.
- 제1항에 있어서, 규소, 규소 합금 또는 산화규소의 1차 미립자 및 탄소의 1차 미립자를 유기규소 화합물 또는 이들의 혼합물과 함께 소결함으로써 제조되며, 각기 규소 또는 규소 합금 미립자 및 탄소 미립자가 상기 무기 화합물 또는 이것의 혼합물을 소결하여 생성되고 결합제 역할을 하는 규소계 무기 화합물에 분산되고, 공극이 상기 입자에 존재하는 구조를 갖는 것을 특징으로 하는 복합체 입자.
- 제3항에 있어서, 상기 규소, 규소 합금 또는 산화규소의 1차 미립자는 100 nm 내지 10 ㎛의 크기를 가지며, 상기 탄소의 1차 미립자는 100 nm 내지 20 ㎛의 크기를 갖고, 상기 규소계 무기 화합물은 Si-C-O 또는 Si-C-N 복합체, SiNx, SiOy, SiCz 또는 이들의 혼합물이며, 여기서 x, y 및 z는 0 < x ≤ 4/3, 0 < y ≤ 2 및 0 < z ≤ 1 범위인 양수인 것을 특징으로 하는 복합체 입자.
- 제3항에 있어서, 상기 탄소의 1차 미립자는 구형 또는 박편형의 천연 또는 합성 그래파이트인 것을 특징으로 하는 복합체 입자.
- 제1항에 있어서, 상기 유기규소 화합물 또는 이것의 혼합물은 가교성 기 또는 경화성 폴리실록산 조성물을 가진 반응성 유기규소 화합물인 것을 특징으로 하는 복합체 입자.
- 제6항에 있어서, 상기 가교성 기를 가진 반응성 유기규소 화합물은 하기 화학식 1 내지 5를 가진 실란 또는 실록산 화합물 중에서 선택되는 1 이상의 구성원인 것을 특징으로 하는 복합체 입자:화학식 1화학식 2화학식 3화학식 4화학식 5상기 식들에서, R1 내지 R7은 각각 독립적으로 수소 원자, 히드록실기, 가수분해 가능한 기 또는 1가 탄화수소기이고, 규소 원자에 부착된 2 이상의 치환기는 수소 원자, 히드록실기, 가수분해 가능한 기 또는 지방족 불포화 탄화수소기이며, m, n 및 k는 0 내지 2,000 범위의 수이고, p 및 q는 0 내지 10 범위의 수이며, 단, p = q = 0이 아니다.
- 제6항에 있어서, 상기 가교성 기를 가진 반응성 유기규소 화합물 또는 그것의 혼합물은 평균 화학식 ChHiSiOjNk(식 중, h, i 및 j는 양수이고, k는 0 또는 양수이며, (h-j)는 0 이상이다)로 표시되고, 4 규소 원자 당 1 이상의 가교성 부위를 가진 실란 또는 실록산인 것을 특징으로 하는 복합체 입자.
- 제6항에 있어서, 상기 경화성 폴리실록산 조성물은 첨가 경화성 유기폴리실록산 조성물인 것을 특징으로 하는 복합체 입자.
- 제3항에 있어서, 상기 유기규소 화합물 또는 그것의 혼합물은 가교성 기 또는 경화성 폴리실록산 조성물을 가진 반응성 유기규소 화합물인 것을 특징으로 하는 복합체 입자.
- 제10항에 있어서, 상기 가교성 기를 가진 반응성 유기규소 화합물은 하기 화학식 1 내지 5를 가진 실란 또는 실록산 화합물 중에서 선택되는 1 이상의 구성원인 것을 특징으로 하는 복합체 입자:화학식 1화학식 2화학식 3화학식 4화학식 5상기 식들에서, R1 내지 R7은 각각 독립적으로 수소 원자, 히드록실기, 가수분해 가능한 기 또는 1가 탄화수소기이고, 규소 원자에 부착된 2 이상의 치환기는 수소 원자, 히드록실기, 가수분해 가능한 기 또는 지방족 불포화 탄화수소기이며, m, n 및 k는 0 내지 2,000 범위의 수이고, p 및 q는 0 내지 10 범위의 수이며, 단, p = q = 0이 아니다.
- 제10항에 있어서, 상기 가교성 기를 가진 반응성 유기규소 화합물 또는 그것의 혼합물은 평균 화학식 ChHiSiOjNk(식 중, h, i 및 j는 양수이고, k는 0 또는 양수이며, (h-j)는 0 이상이다)로 표시되고, 4 규소 원자 당 1 이상의 가교성 부위를 가진 실란 또는 실록산인 것을 특징으로 하는 복합체 입자.
- 제10항에 있어서, 상기 경화성 폴리실록산 조성물은 첨가 경화성 유기폴리실록산 조성물인 것을 특징으로 하는 복합체 입자.
- 제1항에 있어서, 각기 공극 함량이 1 내지 70 부피%인 것을 특징으로 하는 복합체 입자.
- 제3항에 있어서, 각기 공극 함량이 1 내지 70 부피%인 것을 특징으로 하는 복합체 입자.
- 제1항의 복합체 입자가 탄소로 표면 코팅된 것을 특징으로 하는 전도성 복합체 입자.
- 제3항의 복합체 입자가 탄소로 표면 코팅된 것을 특징으로 하는 전도성 복합체 입자.
- 규소, 규소 합금 또는 산화규소의 1차 미립자를 유기규소 화합물 또는 그것의 혼합물과 함께 소결하는 단계 및 각기 규소 또는 규소 합금 미립자가 유기규소 화합물 또는 그것의 혼합물을 소결하고, 결합제 역할을 하여 생성된 규소계 무기 화합물 내에 분산되고, 공극이 각각의 입자에 존재하는 구조를 가진 규소 복합체 합금 미립자로 과립화하는 단계를 포함하는 규소 복합체 입자의 제조 방법.
- 제18항에 있어서, 상기 규소, 규소 합금 또는 산화규소의 1차 미립자는 100 nm 내지 10 ㎛의 크기를 가지며, 상기 규소계 무기 화합물은 Si-C-O 또는 Si-C-N 복합체, SiNx, SiOy, SiCz 또는 이들의 혼합물이고, 여기서 x, y 및 z는 0 < x ≤ 4/3, 0 < y ≤ 2 및 0 < z ≤ 1 범위인 양수인 것을 특징으로 하는 방법.
- 제18항에 있어서, 규소, 규소 합금 또는 산화규소의 1차 미립자 및 탄소의 1차 미립자를 유기규소 화합물 또는 그것의 혼합물과 함께 소결하는 단계 및 각기 규소 또는 규소 합금 미립자가 유기규소 화합물 또는 그것의 혼합물을 소결하고, 결합제 역할을 하여 생성된 규소계 무기 화합물 내에 분산되고, 공극이 각각의 입자에 존재하는 구조를 가진 규소 복합체 합금 미립자를 과립화하는 단계를 포함하는 것을 특징으로 하는 방법.
- 제20항에 있어서, 상기 규소, 규소 합금 또는 산화규소의 1차 미립자는 100 nm 내지 10 ㎛의 크기를 가지며, 상기 탄소의 1차 미립자는 100 nm 내지 20 ㎛의 크기를 갖고, 상기 규소계 무기 화합물은 Si-C-O 또는 Si-C-N 복합체, SiNx, SiOy, SiCz 또는 이들의 혼합물이며, 여기서 x, y 및 z는 0 < x ≤ 4/3, 0 < y ≤ 2 및 0 < z ≤ 1 범위인 양수인 것을 특징으로 하는 방법.
- 제20항에 있어서, 상기 탄소의 1차 미립자는 구형 또는 박편형의 천연 또는 합성 그래파이트인 것을 특징으로 하는 방법.
- 제18항에 있어서, 상기 유기규소 화합물 또는 그것의 혼합물은 가교성 기 또 는 경화성 폴리실록산 조성물을 가진 반응성 유기규소 화합물이고,반응성 유기규소 화합물 또는 경화성 폴리실록산 조성물을 규소 또는 규소 합금의 1차 미립자와 혼합하는 단계, 가교된 생성물로 경화시키기 위하여 열 경화 또는 촉매 반응을 수행하는 단계, 무기물이 되도록 비활성 가스 스트림 하에 500 내지 1,400℃ 범위의 온도에서 가교된 생성물을 가열 및 소결하는 단계 및 무기 생성물을 0.5 내지 30 ㎛의 크기로 미분하는 단계를 포함하는 것을 특징으로 하는 방법.
- 제23항에 있어서, 상기 가교성 기를 가진 반응성 유기규소 화합물은 하기 화학식 1 내지 5를 가진 실란 또는 실록산 화합물 중에서 선택되는 1 이상의 구성원인 것을 특징으로 하는 방법:화학식 1화학식 2화학식 3화학식 4화학식 5상기 식들에서, R1 내지 R7은 각각 독립적으로 수소 원자, 히드록실기, 가수분해 가능한 기 또는 1가 탄화수소기이고, 규소 원자에 부착된 2 이상의 치환기는 수소 원자, 히드록실기, 가수분해 가능한 기 또는 지방족 불포화 탄화수소기이며, m, n 및 k는 0 내지 2,000 범위의 수이고, p 및 q는 0 내지 10 범위의 수이며, 단, p = q = 0이 아니다.
- 제23항에 있어서, 상기 가교성 기를 가진 반응성 유기규소 화합물 또는 그것의 혼합물은 평균 화학식 ChHiSiOjNk(식 중, h, i 및 j는 양수이고, k는 0 또는 양수이며, (h-j)는 0 이상이다)로 표시되고, 4 규소 원자 당 1 이상의 가교성 부위를 가진 실란 또는 실록산인 것을 특징으로 하는 방법.
- 제23항에 있어서, 상기 경화성 폴리실록산 조성물은 첨가 경화성 유기폴리실록산 조성물인 것을 특징으로 하는 방법.
- 제20항에 있어서, 상기 유기규소 화합물 또는 그것의 혼합물은 가교성 기 또는 경화성 폴리실록산 조성물을 가진 반응성 유기규소 화합물이고,반응성 유기규소 화합물 또는 경화성 폴리실록산 조성물을 규소 또는 규소 합금의 1차 미립자와 혼합하는 단계, 가교된 생성물로 경화시키기 위하여 열 경화 또는 촉매 반응을 수행하는 단계, 무기물이 되도록 비활성 가스 스트림 하에 500 내지 1,400℃ 범위의 온도에서 가교된 생성물을 가열 및 소결하는 단계 및 무기 생성물을 0.5 내지 30 ㎛의 크기로 미분하는 단계를 포함하는 것을 특징으로 하는 방법.
- 제27항에 있어서, 상기 가교성 기를 가진 반응성 유기규소 화합물은 하기 화 학식 1 내지 5를 가진 실란 또는 실록산 화합물 중에서 선택되는 1 이상의 구성원인 것을 특징으로 하는 방법:화학식 1화학식 2화학식 3화학식 4화학식 5상기 식들에서, R1 내지 R7은 각각 독립적으로 수소 원자, 히드록실기, 가수분해 가능한 기 또는 1가 탄화수소기이고, 규소 원자에 부착된 2 이상의 치환기는 수소 원자, 히드록실기, 가수분해 가능한 기 또는 지방족 불포화 탄화수소기이며, m, n 및 k는 0 내지 2,000 범위의 수이고, p 및 q는 0 내지 10 범위의 수이며, 단, p = q = 0이 아니다.
- 제27항에 있어서, 상기 가교성 기를 가진 반응성 유기규소 화합물 또는 그것의 혼합물은 평균 화학식 ChHiSiOjNk(식 중, h, i 및 j는 양수이고, k는 0 또는 양수이며, (h-j)는 0 이상이다)로 표시되고, 4 규소 원자 당 1 이상의 가교성 부위를 가진 실란 또는 실록산인 것을 특징으로 하는 방법.
- 제27항에 있어서, 상기 경화성 폴리실록산 조성물은 첨가 경화성 유기폴리실록산 조성물인 것을 특징으로 하는 방법.
- 제18항에 있어서, 규소 또는 규소 합금의 1차 미립자를 실란 커플링제, 그것의 (부분) 가수분해 축합물, 실릴화제 및 실리콘 수지 중에서 선택되는 1 이상의 표면 처리제로 전처리하는 단계를 더 포함하는 것을 특징으로 하는 방법.
- 제20항에 있어서, 규소 또는 규소 합금의 1차 미립자를 실란 커플링제, 그것의 (부분) 가수분해 축합물, 실릴화제 및 실리콘 수지 중에서 선택되는 1 이상의 표면 처리제로 전처리하는 단계를 더 포함하는 것을 특징으로 하는 방법.
- 유기 물질 가스 및/또는 증기를 함유하는 분위기 중에 800 내지 1,400℃의 온도에서 제18항의 방법에 의해 제조된 규소 또는 규소-탄소 복합체 입자를 열 처리하여 규소 또는 규소-탄소 복합체 입자의 표면을 코팅하는 단계를 포함하는 전도성 규소-탄소 복합체 입자의 제조 방법.
- 유기 물질 가스 및/또는 증기를 함유하는 분위기 중에 800 내지 1,400℃의 온도에서 제20항의 방법에 의해 제조된 규소 또는 규소-탄소 복합체 입자를 열 처리하여 규소 또는 규소-탄소 복합체 입자의 표면을 코팅하는 단계를 포함하는 전도성 규소-탄소 복합체 입자의 제조 방법.
- 제1항의 규소 또는 규소-탄소 복합체 입자를 포함하는 것을 특징으로 하는 비수성 전해질 2차 전지용 음극재.
- 제3항의 규소 또는 규소-탄소 복합체 입자를 포함하는 것을 특징으로 하는 비수성 전해질 2차 전지용 음극재.
- 제1항의 규소 또는 규소-탄소 복합체 입자 및 전도성 제제 1 내지 60 중량%의 혼합물을 포함하며, 상기 혼합물은 총 탄소 함량이 25 내지 90 중량%인 것을 특징으로 하는 비수성 전해질 2차 전지용 음극재.
- 제3항의 규소 또는 규소-탄소 복합체 입자 및 전도성 제제 1 내지 60 중량%의 혼합물을 포함하며, 상기 혼합물은 총 탄소 함량이 25 내지 90 중량%인 것을 특징으로 하는 비수성 전해질 2차 전지용 음극재.
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-
2005
- 2005-03-22 US US11/085,518 patent/US7790316B2/en active Active
- 2005-03-24 TW TW094109153A patent/TWI373160B/zh not_active IP Right Cessation
- 2005-03-25 KR KR1020050024772A patent/KR100805133B1/ko active IP Right Grant
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Cited By (4)
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KR101139205B1 (ko) * | 2004-07-30 | 2012-04-26 | 신에쓰 가가꾸 고교 가부시끼가이샤 | Si-C-O계 복합체 및 그의 제조 방법 및 비수전해질이차 전지용 부극재 |
KR101451801B1 (ko) * | 2007-02-14 | 2014-10-17 | 삼성에스디아이 주식회사 | 음극 활물질, 그 제조 방법 및 이를 채용한 음극과 리튬전지 |
KR101375491B1 (ko) * | 2008-04-10 | 2014-04-01 | 주식회사 엘지화학 | 전극활물질용 복합체 및 그 제조방법 |
US9413003B2 (en) | 2011-04-13 | 2016-08-09 | Sei Corporation | Electrode material for lithium secondary battery and lithium secondary battery |
Also Published As
Publication number | Publication date |
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US7790316B2 (en) | 2010-09-07 |
CN1674325A (zh) | 2005-09-28 |
US20050214644A1 (en) | 2005-09-29 |
TW200603473A (en) | 2006-01-16 |
CN100459245C (zh) | 2009-02-04 |
TWI373160B (en) | 2012-09-21 |
KR100805133B1 (ko) | 2008-02-21 |
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