KR20040065331A - 클램프 회로를 갖는 이미지센서 - Google Patents
클램프 회로를 갖는 이미지센서 Download PDFInfo
- Publication number
- KR20040065331A KR20040065331A KR1020030002189A KR20030002189A KR20040065331A KR 20040065331 A KR20040065331 A KR 20040065331A KR 1020030002189 A KR1020030002189 A KR 1020030002189A KR 20030002189 A KR20030002189 A KR 20030002189A KR 20040065331 A KR20040065331 A KR 20040065331A
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- South Korea
- Prior art keywords
- clamp
- image sensor
- voltage
- transistor
- signal
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- 230000003287 optical effect Effects 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 9
- 238000005070 sampling Methods 0.000 claims description 5
- 230000001276 controlling effect Effects 0.000 claims description 2
- 230000002596 correlated effect Effects 0.000 claims 1
- 230000002542 deteriorative effect Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 11
- 230000003760 hair shine Effects 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 2
- 244000025254 Cannabis sativa Species 0.000 description 1
- 235000012766 Cannabis sativa ssp. sativa var. sativa Nutrition 0.000 description 1
- 235000012765 Cannabis sativa ssp. sativa var. spontanea Nutrition 0.000 description 1
- 244000269722 Thea sinensis Species 0.000 description 1
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- 235000005607 chanvre indien Nutrition 0.000 description 1
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- 230000002093 peripheral effect Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/616—Noise processing, e.g. detecting, correcting, reducing or removing noise involving a correlated sampling function, e.g. correlated double sampling [CDS] or triple sampling
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
- H04N25/627—Detection or reduction of inverted contrast or eclipsing effects
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
Claims (3)
- M ×N 사이즈의 단위화소 어레이를 갖으며, 상기 단위화소의 리셋신호와 광신호에 의한 데이타 신호의 차를 이용하여 피사체에 대한 데이타를 출력하는 상관이중샘플링 방식의 이미지센서에 있어서,상기 리셋신호와 상기 데이타 신호를 각각 출력하는 복수개의 단위화소;상기 리셋신호를 소정의 전압레벨로 클램핑하기 위하여 상기 복수개의 단위화소의 출력단에 연결된 복수개의 클램핑 트랜지스터: 및상기 복수개의 클램핑 트랜지스터의 게이트 전압을 제어하는 전압조절부을 포함하는 이미지센서.
- 제 1 항에 있어서,상기 전압조절부는디지탈 코드를 입력받아 아날로그 전압값을 출력하는 D/A 변환기;상기 D/A 변환기와 클램프 트랜지스터의 게이트 사이에 접속되어 제1 제어신호에 따라 개폐되는 제1 스위칭 소자;제1 제어신호를 입력받아 반전하여 출력하는 인버터; 및접지단과 클램프 트랜지스터의 게이트 사이에 접속되어 상기 인버터의 출력에 따라 개패되는 제2 스위칭 소자를 포함하여 이루어지는 것을 특징으로 하는 이미지센서.
- 제 1 항에 있어서,상기 클램핑 트랜지스터는 상기 M ×N 사이즈의 단위화소 어레이구조에서 각 칼럼마다 구비되어 있으며, 상기 전압조절부는 이미지센서 칩 전체에 하나가 구비되어 있는 것을 특징으로 하는 이미지센서.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020030002189A KR100574891B1 (ko) | 2003-01-13 | 2003-01-13 | 클램프 회로를 갖는 이미지센서 |
JP2003433193A JP4455874B2 (ja) | 2003-01-13 | 2003-12-26 | クランプ回路を有するイメージセンサ |
US10/749,340 US7394491B2 (en) | 2003-01-13 | 2003-12-30 | Image sensor having clamp circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020030002189A KR100574891B1 (ko) | 2003-01-13 | 2003-01-13 | 클램프 회로를 갖는 이미지센서 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20040065331A true KR20040065331A (ko) | 2004-07-22 |
KR100574891B1 KR100574891B1 (ko) | 2006-04-27 |
Family
ID=32822582
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020030002189A KR100574891B1 (ko) | 2003-01-13 | 2003-01-13 | 클램프 회로를 갖는 이미지센서 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7394491B2 (ko) |
JP (1) | JP4455874B2 (ko) |
KR (1) | KR100574891B1 (ko) |
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JP5340374B2 (ja) * | 2005-06-09 | 2013-11-13 | キヤノン株式会社 | 撮像装置及び撮像システム |
JP5247007B2 (ja) | 2005-06-09 | 2013-07-24 | キヤノン株式会社 | 撮像装置及び撮像システム |
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JP4997137B2 (ja) * | 2008-02-20 | 2012-08-08 | オリンパス株式会社 | 固体撮像装置 |
JP5531417B2 (ja) | 2009-02-12 | 2014-06-25 | 株式会社ニコン | 固体撮像装置 |
JP2010251829A (ja) * | 2009-04-10 | 2010-11-04 | Olympus Corp | 固体撮像素子、カメラシステム、及び信号読み出し方法 |
JP5218309B2 (ja) * | 2009-07-14 | 2013-06-26 | ソニー株式会社 | 固体撮像素子およびその制御方法、並びにカメラシステム |
JP2011176762A (ja) * | 2010-02-25 | 2011-09-08 | Panasonic Corp | 固体撮像装置およびカメラ |
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KR102178825B1 (ko) | 2013-11-15 | 2020-11-13 | 삼성전자 주식회사 | 픽셀 출력 레벨 제어 장치 및 이를 적용하는 이미지 센서 |
US10101373B2 (en) | 2014-04-21 | 2018-10-16 | Palo Alto Research Center Incorporated | Capacitive imaging device with active pixels and method |
JP6399871B2 (ja) * | 2014-09-11 | 2018-10-03 | キヤノン株式会社 | 撮像装置及びその制御方法 |
JP2017117828A (ja) * | 2015-12-21 | 2017-06-29 | ソニー株式会社 | 固体撮像素子および電子装置 |
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US11430821B2 (en) * | 2020-12-07 | 2022-08-30 | Semiconductor Components Industries, Llc | Image sensor with active clamp to suppress transfer gate feedthrough |
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-
2003
- 2003-01-13 KR KR1020030002189A patent/KR100574891B1/ko active IP Right Grant
- 2003-12-26 JP JP2003433193A patent/JP4455874B2/ja not_active Expired - Lifetime
- 2003-12-30 US US10/749,340 patent/US7394491B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
JP4455874B2 (ja) | 2010-04-21 |
US20040155973A1 (en) | 2004-08-12 |
KR100574891B1 (ko) | 2006-04-27 |
JP2004222273A (ja) | 2004-08-05 |
US7394491B2 (en) | 2008-07-01 |
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