KR20030074451A - 트랜지스터 회로 - Google Patents
트랜지스터 회로 Download PDFInfo
- Publication number
- KR20030074451A KR20030074451A KR10-2003-0015975A KR20030015975A KR20030074451A KR 20030074451 A KR20030074451 A KR 20030074451A KR 20030015975 A KR20030015975 A KR 20030015975A KR 20030074451 A KR20030074451 A KR 20030074451A
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- transistor
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- 239000003990 capacitor Substances 0.000 claims abstract description 36
- 238000000034 method Methods 0.000 claims description 10
- 230000014759 maintenance of location Effects 0.000 claims description 2
- 239000010408 film Substances 0.000 description 25
- 239000010410 layer Substances 0.000 description 24
- 238000003860 storage Methods 0.000 description 13
- 239000011229 interlayer Substances 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 6
- 230000007547 defect Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000007689 inspection Methods 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 230000002950 deficient Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Classifications
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
- G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/006—Electronic inspection or testing of displays and display drivers, e.g. of LED or LCD displays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
- G09G2300/0809—Several active elements per pixel in active matrix panels
- G09G2300/0842—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electroluminescent Light Sources (AREA)
- Thin Film Transistor (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (8)
- 일단이 신호선에 접속되며, 게이트로 선택 신호를 받아 동작하는 제1 트랜지스터와,상기 제1 트랜지스터의 타단이 게이트에 접속되며, 전류 소비 또는 전류 발생 소자에 대한 전류를 제어하는 제2 트랜지스터를 포함하며,상기 제2 트랜지스터는, 그 게이트와 소스 또는 드레인 사이에서 발생하는 트랜지스터 용량이 5fF 이상인 것을 특징으로 하는 트랜지스터 회로.
- 제1항에 있어서,상기 제1 트랜지스터의 타단 및 제2 트랜지스터의 게이트에는, 전하 유지용의 유지 용량이 접속되어 있는 것을 특징으로 하는 트랜지스터 회로.
- 일단이 신호선에 접속되며, 게이트로 선택 신호를 받아 동작하는 제1 트랜지스터와,상기 제1 트랜지스터의 타단이 게이트에 접속되며, 전류 소비 또는 전류 발생 소자에 대한 전류를 제어하는 제2 트랜지스터와,상기 제1 트랜지스터의 타단 및 상기 제2 트랜지스터의 게이트에 접속된 전하 유지용의 유지 용량을 포함하며,상기 제2 트랜지스터는, 그 게이트와 소스 또는 드레인 사이에서 발생하는 트랜지스터 용량의 크기가, 상기 유지 용량의 용량의 5% 이상인 것을 특징으로 하는 트랜지스터 회로.
- 일단이 신호선에 접속되며, 게이트로 선택 신호를 받아 동작하는 제1 트랜지스터와,상기 제1 트랜지스터의 타단이 게이트에 접속되며, 전류 소비 또는 전류 발생 소자에 대한 전류를 제어하는 제2 트랜지스터를 포함하며,상기 제2 트랜지스터는, 그 게이트와 소스 또는 드레인 사이에서 발생하는 트랜지스터 용량을 증가시키는 용량 증가 수단을 갖는 것을 특징으로 하는 트랜지스터 회로.
- 제4항에 있어서,상기 용량 증가 수단은, 상기 제2 트랜지스터의 채널 영역의 일부를 평면적으로 확대하고, 채널 폭, 채널 길이를 유지하면서 채널 영역을 확대하여, 트랜지스터 용량을 크게 하는 것을 특징으로 하는 트랜지스터 회로.
- 제4항 또는 제5항에 있어서,상기 제1 트랜지스터의 타단 및 제2 트랜지스터의 게이트에는, 전하 유지용의 유지 용량이 접속되어 있는 것을 특징으로 하는 트랜지스터 회로.
- 제2항 또는 제3항에 있어서,상기 제1 트랜지스터의 일단이 접속되는 신호선은, 표시 데이터를 공급하는 데이터선이고,상기 제2 트랜지스터는, 유지 용량에 유지된 전압에 따른 전류를 전원선으로부터 유기 EL 소자에 공급하는 것을 특징으로 하는 트랜지스터 회로.
- 제6항에 있어서,상기 제1 트랜지스터의 일단이 접속되는 신호선은, 표시 데이터를 공급하는 데이터선이고,상기 제2 트랜지스터는, 유지 용량에 유지된 전압에 따른 전류를 전원선으로부터 유기 EL 소자에 공급하는 것을 특징으로 하는 트랜지스터 회로.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2002-00072248 | 2002-03-15 | ||
JP2002072248A JP4274734B2 (ja) | 2002-03-15 | 2002-03-15 | トランジスタ回路 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20030074451A true KR20030074451A (ko) | 2003-09-19 |
KR100499841B1 KR100499841B1 (ko) | 2005-07-07 |
Family
ID=29202295
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR10-2003-0015975A KR100499841B1 (ko) | 2002-03-15 | 2003-03-14 | 트랜지스터 회로 |
Country Status (5)
Country | Link |
---|---|
US (1) | US6914448B2 (ko) |
JP (1) | JP4274734B2 (ko) |
KR (1) | KR100499841B1 (ko) |
CN (1) | CN1278490C (ko) |
TW (1) | TW591803B (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20140023846A (ko) * | 2011-06-27 | 2014-02-27 | 파나소닉 주식회사 | 표시 장치 및 그 제조 방법 |
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- 2002-03-15 JP JP2002072248A patent/JP4274734B2/ja not_active Expired - Lifetime
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- 2003-02-21 TW TW092103619A patent/TW591803B/zh not_active IP Right Cessation
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KR20140023846A (ko) * | 2011-06-27 | 2014-02-27 | 파나소닉 주식회사 | 표시 장치 및 그 제조 방법 |
Also Published As
Publication number | Publication date |
---|---|
JP2003273122A (ja) | 2003-09-26 |
CN1278490C (zh) | 2006-10-04 |
JP4274734B2 (ja) | 2009-06-10 |
TW591803B (en) | 2004-06-11 |
TW200304228A (en) | 2003-09-16 |
US6914448B2 (en) | 2005-07-05 |
US20040004218A1 (en) | 2004-01-08 |
KR100499841B1 (ko) | 2005-07-07 |
CN1461107A (zh) | 2003-12-10 |
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