KR20020092251A - 반도체막, 반도체 디바이스 및 그것들의 제조방법 - Google Patents
반도체막, 반도체 디바이스 및 그것들의 제조방법 Download PDFInfo
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- 238000002425 crystallisation Methods 0.000 abstract description 26
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
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- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
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- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
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- 150000002367 halogens Chemical class 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
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- 238000004949 mass spectrometry Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- AIYYMMQIMJOTBM-UHFFFAOYSA-L nickel(ii) acetate Chemical compound [Ni+2].CC([O-])=O.CC([O-])=O AIYYMMQIMJOTBM-UHFFFAOYSA-L 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 150000002926 oxygen Chemical class 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
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- 238000000926 separation method Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
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- 229940073455 tetraethylammonium hydroxide Drugs 0.000 description 1
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 description 1
- 238000000624 total reflection X-ray fluorescence spectroscopy Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/7866—Non-monocrystalline silicon transistors
- H01L29/78663—Amorphous silicon transistors
- H01L29/78666—Amorphous silicon transistors with normal-type structure, e.g. with top gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/7866—Non-monocrystalline silicon transistors
- H01L29/78672—Polycrystalline or microcrystalline silicon transistor
- H01L29/78675—Polycrystalline or microcrystalline silicon transistor with normal-type structure, e.g. with top gate
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- Power Engineering (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Thin Film Transistor (AREA)
- Recrystallisation Techniques (AREA)
Abstract
Description
Claims (19)
- 비정질 반도체막을 형성하는 방법에 있어서,0.1 Pa 내지 5 Pa의 성막 압력으로 불활성 가스를 성막실에 도입함으로써 성막실에서 스퍼터링 법에 의해 표면 상에 비정질 반도체막을 형성하는 단계를 포함하며;상기 스퍼터링 법은 교류를 인가함으로써 글로우 방전이 일어나는 조건에서 실행되고,1×1019/cm3내지 1×1022/cm3의 상기 불활성 가스 원소가 상기 비정질 반도체막에 포함되는, 비정질 반도체막을 형성하는 방법.
- 제1 항에 있어서,상기 글로우 방전을 일으키는 RF 전력 밀도가 0.137W/cm2내지 6.847W/cm2인, 비정질 반도체막을 형성하는 방법.
- 제1 항에 있어서,상기 불활성 가스가 He, Ne, Kr 및 Xe으로 구성된 그룹으로부터 선택된 하나 또는 복수의 종인, 비정질 반도체막을 형성하는 방법.
- 1×1019/cm3내지 1×1022/cm3의 농도로 불활성 가스 원소를 포함하는 비정질 반도체막에 있어서,상기 비정질 반도체막 내의 내부 응력이 압축 응력인, 비정질 반도체막.
- 반도체 디바이스를 제조하는 방법에 있어서,절연 표면 상에 비정질 반도체막을 형성하는 단계,상기 비정질 반도체막에 금속원소를 첨가하는 단계,결정화된 반도체막을 형성하기 위해 상기 비정질 반도체막을 결정화하는 단계,상기 결정화된 반도체막 상에 배리어층을 형성하는 단계,스퍼터 법에 의해 상기 배리어층 상에 불활성 가스 원소를 포함하는 제2 반도체막을 형성하는 단계,상기 결정화된 반도체막에서 상기 금속 원소를 제거 또는 감소시키기 위해 상기 제2 반도체막으로 상기 금속 원소의 게터링을 실행하는 단계,상기 제2 반도체막을 제거하는 단계를 포함하는, 반도체 디바이스 제조 방법.
- 제5 항에 있어서,0.137W/cm2내지 6.847W/cm2의 RF 전력 밀도로 글로우 방전을 일으키기 위해0.1 Pa 내지 5 Pa의 성막 압력으로 성막실에서 불활성 가스가 도입되는 스퍼터 법에 의해 상기 제2 반도체막이 형성되는, 반도체 디바이스 제조 방법.
- 제5 항에 있어서,상기 금속 원소가 Fe, Ni, Co, Ru, Rh, Pd, Os, Ir, Pt, Cu 및 Au로 구성된 그룹으로부터 선택된 하나 또는 복수의 종인,반도체 디바이스 제조 방법.
- 제5 항에 있어서,상기 불활성 가스는 He, Ne, Ar, Kr 및 Xe로 구성된 그룹으로부터 선택된 하나 또는 복수의 종인,반도체 디바이스 제조 방법.
- 1×1020/cm3내지 6×1020/cm3의 범위의 농도로 Ar을 포함하는 비정질 실리콘막을 포함하는 반도체 디바이스.
- 압축 응력이 -10.0×1010dynes/cm2내지 -5.0×109dynes/cm2의 범위인 비정질 반도체막을 포함하는 반도체 디바이스.
- 반도체 디바이스를 제조하는 방법에 있어서,절연 표면 상에 비정질 반도체막을 형성하는 단계,상기 비정질 반도체막에 금속 원소를 첨가하는 단계,상기 비정질 반도체막을 결정화하는 단계,상기 결정화된 반도체막 상에 배리어층을 형성하는 단계,스퍼터 법에 의해 상기 배리어층 상에 불활성 가스 원소를 포함하는 제2 반도체막을 형성하는 단계,상기 결정화된 반도체막에서 상기 금속 원소를 제거 또는 감소시키기 위해 상기 제2 반도체막으로 상기 금속 원소를 게터링하는 단계,상기 제2 반도체막을 제거하는 단계를 포함하며,불활성 가스 원소의 농도가 1×1019/cm3내지 1×1022/cm3까지의 범위이고,상기 비정질 반도체막에서의 내부 응력이 압축 응력인, 반도체 디바이스 제조 방법.
- 제11 항에 있어서,상기 금속 원소가 Fe, Ni, Co, Ru, Rh, Pd, Os, Ir, Pt, Cu 및 Au로 구성된 그룹으로부터 선택된 하나 또는 복수의 종인 반도체 디바이스 제조 방법.
- 제11 항에 있어서,상기 불활성 가스가 He, Ne, Ar, Kr 및 Xe로 구성된 그룹으로부터 선택된 하나 또는 복수의 종인 반도체 디바이스 제조 방법.
- 반도체 디바이스를 제조하는 방법에 있어서,절연 표면 상에 비정질 반도체막을 형성하는 단계,상기 비정질 반도체막에 금속 원소를 첨가하는 단계,결정화된 반도체막을 형성하기 위해 상기 비정질 반도체막을 결정화하는 단계,상기 결정화된 반도체막 상에 배리어층을 형성하는 단계,스퍼터 법에 의해 상기 배리어층 상에 불활성 가스 원소를 포함하는 반도체막을 형성하는 단계,상기 결정화된 반도체막에서 상기 금속 원소를 제거 또는 감소시키기 위해 상기 반도체막으로 상기 금속 원소의 게터링을 실행하는 단계,상기 반도체막을 제거하는 단계를 포함하며,상기 반도체막에서 상기 불활성 가스 원소의 농도가 1×1019/cm3내지 1×1022/cm3이고,상기 반도체막의 압축 응력이 -10.0×1010dynes/cm2내지 -5.0×109dynes/cm2인, 반도체 디바이스 제조 방법.
- 제14 항에 있어서,상기 금속 원소가 Fe, Ni, Co, Ru, Rh, Pd, Os, Ir, Pt, Cu 및 Au로 구성된 그룹으로부터 선택된 하나 또는 복수의 종인, 반도체 디바이스 제조 방법.
- 제14 항에 있어서,상기 불활성 가스가 He, Ne, Ar, Kr 및 Xe로 구성된 그룹으로부터 선택된 하나 또는 복수의 종인, 반도체 디바이스 제조 방법.
- 반도체 디바이스를 제조하는 방법에 있어서,절연 표면 상에 제1 반도체막을 형성하는 단계,상기 제1 반도체막 상에 배리어막을 형성하는 단계,1×1019/cm3내지 1×1022/cm3의 농도로 불활성 가스 원소를 포함하는 제2 반도체막을 형성하는 단계를 포함하며,상기 제2 반도체막에서의 압축 응력이 -10.0×1010dynes/cm2내지 -5.0×109dynes/cm2의 범위인,반도체 디바이스 제조 방법.
- 제17 항에 있어서,상기 금속 원소가 Fe, Ni, Co, Ru, Rh, Pd, Os, Ir, Pt, Cu 및 Au로 구성된그룹으로부터 선택된 하나 또는 복수의 종인,반도체 디바이스 제조 방법.
- 제17 항에 있어서,상기 불활성 가스가 He, Ne, Ar, Kr 및 Xe로 구성된 그룹으로부터 선택된 하나 또는 복수의 종인,반도체 디바이스 제조 방법.
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TW541584B (en) | 2003-07-11 |
US20020182783A1 (en) | 2002-12-05 |
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