KR19980069868A - 혼합된 신호 집적회로 장치를 고도로 집적하는 절연체 상의 다중 두께 실리콘 웨이퍼 - Google Patents
혼합된 신호 집적회로 장치를 고도로 집적하는 절연체 상의 다중 두께 실리콘 웨이퍼 Download PDFInfo
- Publication number
- KR19980069868A KR19980069868A KR1019970036206A KR19970036206A KR19980069868A KR 19980069868 A KR19980069868 A KR 19980069868A KR 1019970036206 A KR1019970036206 A KR 1019970036206A KR 19970036206 A KR19970036206 A KR 19970036206A KR 19980069868 A KR19980069868 A KR 19980069868A
- Authority
- KR
- South Korea
- Prior art keywords
- thickness
- silicon
- region
- semiconductor die
- substrate
- Prior art date
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 78
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 74
- 239000010703 silicon Substances 0.000 title claims abstract description 74
- 239000012212 insulator Substances 0.000 title claims description 10
- 235000012431 wafers Nutrition 0.000 title abstract description 60
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 239000004065 semiconductor Substances 0.000 claims abstract description 24
- 238000000034 method Methods 0.000 claims abstract description 18
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 15
- 239000010409 thin film Substances 0.000 claims abstract description 14
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 239000003795 chemical substances by application Substances 0.000 claims 2
- 230000000873 masking effect Effects 0.000 claims 2
- 238000005530 etching Methods 0.000 claims 1
- 150000004767 nitrides Chemical class 0.000 abstract description 5
- 230000003647 oxidation Effects 0.000 abstract description 2
- 238000007254 oxidation reaction Methods 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 13
- 230000000694 effects Effects 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 238000010924 continuous production Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0922—Combination of complementary transistors having a different structure, e.g. stacked CMOS, high-voltage and low-voltage CMOS
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Element Separation (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US78219297A | 1997-01-10 | 1997-01-10 | |
| US8/782,192 | 1997-01-10 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR19980069868A true KR19980069868A (ko) | 1998-10-26 |
Family
ID=25125287
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019970036206A KR19980069868A (ko) | 1997-01-10 | 1997-07-30 | 혼합된 신호 집적회로 장치를 고도로 집적하는 절연체 상의 다중 두께 실리콘 웨이퍼 |
Country Status (2)
| Country | Link |
|---|---|
| KR (1) | KR19980069868A (de) |
| DE (1) | DE19732237C2 (de) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100520466B1 (ko) * | 1998-12-30 | 2006-01-12 | 주식회사 하이닉스반도체 | 이미지센서 및 그 제조방법 |
| KR100730669B1 (ko) * | 2004-07-30 | 2007-06-21 | 세이코 엡슨 가부시키가이샤 | 반도체 기판의 제조 방법 및 반도체 장치의 제조 방법 |
| KR100734229B1 (ko) * | 2002-10-22 | 2007-07-02 | 주식회사 사무코 | 접합 ｓｏｉ 기판, 그 제조 방법 및 반도체 장치 |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1067600B1 (de) * | 1999-07-06 | 2006-11-02 | ELMOS Semiconductor AG | CMOS kompatibler SOI-Prozess |
| DE102004005506B4 (de) * | 2004-01-30 | 2009-11-19 | Atmel Automotive Gmbh | Verfahren zur Erzeugung von aktiven Halbleiterschichten verschiedener Dicke in einem SOI-Wafer |
| DE102004005951B4 (de) * | 2004-02-02 | 2005-12-29 | Atmel Germany Gmbh | Verfahren zur Herstellung von vertikal isolierten Bauelementen auf SOI-Material unterschiedlicher Dicke |
| DE102006035073B4 (de) | 2006-07-28 | 2014-03-20 | Austriamicrosystems Ag | Halbleiterbauelement mit einem Dünnfilmtransistor und CMOS-Transistoren, Verfahren zur Herstellung eines solchen Bauelements sowie Verwendung eines solchen Bauelements |
| US10748934B2 (en) * | 2018-08-28 | 2020-08-18 | Qualcomm Incorporated | Silicon on insulator with multiple semiconductor thicknesses using layer transfer |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63119218A (ja) * | 1986-11-07 | 1988-05-23 | Canon Inc | 半導体基材とその製造方法 |
-
1997
- 1997-07-26 DE DE19732237A patent/DE19732237C2/de not_active Expired - Fee Related
- 1997-07-30 KR KR1019970036206A patent/KR19980069868A/ko not_active Application Discontinuation
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100520466B1 (ko) * | 1998-12-30 | 2006-01-12 | 주식회사 하이닉스반도체 | 이미지센서 및 그 제조방법 |
| KR100734229B1 (ko) * | 2002-10-22 | 2007-07-02 | 주식회사 사무코 | 접합 ｓｏｉ 기판, 그 제조 방법 및 반도체 장치 |
| US7253082B2 (en) | 2002-10-22 | 2007-08-07 | Sumitomo Mitsubishi Silicon Corporation | Pasted SOI substrate, process for producing the same and semiconductor device |
| KR100730669B1 (ko) * | 2004-07-30 | 2007-06-21 | 세이코 엡슨 가부시키가이샤 | 반도체 기판의 제조 방법 및 반도체 장치의 제조 방법 |
| US7351616B2 (en) | 2004-07-30 | 2008-04-01 | Seiko Epson Corporation | Semiconductor substrate, semiconductor device, method for manufacturing semiconductor substrate and method for manufacturing semiconductor device |
| US7956414B2 (en) | 2004-07-30 | 2011-06-07 | Seiko Epson Corporation | Semiconductor substrate, semiconductor device, method for manufacturing semiconductor substrate, and method for manufacturing semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| DE19732237A1 (de) | 1998-07-16 |
| DE19732237C2 (de) | 2003-07-17 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E902 | Notification of reason for refusal | ||
| E601 | Decision to refuse application |