KR102061969B1 - 기판 처리 장치 - Google Patents

기판 처리 장치 Download PDF

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Publication number
KR102061969B1
KR102061969B1 KR1020180045913A KR20180045913A KR102061969B1 KR 102061969 B1 KR102061969 B1 KR 102061969B1 KR 1020180045913 A KR1020180045913 A KR 1020180045913A KR 20180045913 A KR20180045913 A KR 20180045913A KR 102061969 B1 KR102061969 B1 KR 102061969B1
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KR
South Korea
Prior art keywords
substrate
gas
board
guide member
processing apparatus
Prior art date
Application number
KR1020180045913A
Other languages
English (en)
Korean (ko)
Other versions
KR20180120585A (ko
Inventor
히사시 요다
세이지 다나카
Original Assignee
도쿄엘렉트론가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 도쿄엘렉트론가부시키가이샤 filed Critical 도쿄엘렉트론가부시키가이샤
Publication of KR20180120585A publication Critical patent/KR20180120585A/ko
Application granted granted Critical
Publication of KR102061969B1 publication Critical patent/KR102061969B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32871—Means for trapping or directing unwanted particles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Drying Of Semiconductors (AREA)
  • Paper (AREA)
  • Plasma Technology (AREA)
KR1020180045913A 2017-04-27 2018-04-20 기판 처리 장치 KR102061969B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2017-088265 2017-04-27
JP2017088265A JP6861570B2 (ja) 2017-04-27 2017-04-27 基板処理装置

Publications (2)

Publication Number Publication Date
KR20180120585A KR20180120585A (ko) 2018-11-06
KR102061969B1 true KR102061969B1 (ko) 2020-01-02

Family

ID=64094140

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020180045913A KR102061969B1 (ko) 2017-04-27 2018-04-20 기판 처리 장치

Country Status (4)

Country Link
JP (1) JP6861570B2 (ja)
KR (1) KR102061969B1 (ja)
CN (1) CN108807124B (ja)
TW (1) TWI785032B (ja)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102203962B1 (ko) * 2019-04-15 2021-01-18 (주)위지트 비증착 구간 발생이 없는 서셉터
CN110211860B (zh) * 2019-06-26 2021-07-13 南京中电熊猫液晶显示科技有限公司 一种干法刻蚀设备
KR20210065054A (ko) * 2019-11-25 2021-06-03 주식회사 원익아이피에스 가스 공급 블록 및 이를 포함하는 기판 처리 장치
JP7437985B2 (ja) * 2020-03-16 2024-02-26 東京エレクトロン株式会社 基板処理装置および基板処理方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080142159A1 (en) 2004-12-17 2008-06-19 Tokyo Electron Limited Plasma Processing Apparatus
KR101057931B1 (ko) * 2008-02-05 2011-08-18 도쿄엘렉트론가부시키가이샤 처리 장치

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20120077546A (ko) * 2010-12-30 2012-07-10 엘지디스플레이 주식회사 플라즈마 화학 기상 증착장비
US8802545B2 (en) * 2011-03-14 2014-08-12 Plasma-Therm Llc Method and apparatus for plasma dicing a semi-conductor wafer
CN105190862B (zh) * 2013-03-06 2018-09-11 等离子瑟姆有限公司 用于对半导体晶圆进行等离子切片的方法和设备
KR102175082B1 (ko) * 2013-12-31 2020-11-05 세메스 주식회사 기판 처리 장치
JP6349796B2 (ja) * 2014-03-11 2018-07-04 東京エレクトロン株式会社 プラズマ処理装置、薄膜トランジスターの製造方法及び記憶媒体

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080142159A1 (en) 2004-12-17 2008-06-19 Tokyo Electron Limited Plasma Processing Apparatus
KR101057931B1 (ko) * 2008-02-05 2011-08-18 도쿄엘렉트론가부시키가이샤 처리 장치

Also Published As

Publication number Publication date
CN108807124A (zh) 2018-11-13
JP6861570B2 (ja) 2021-04-21
TW201907474A (zh) 2019-02-16
KR20180120585A (ko) 2018-11-06
JP2018186221A (ja) 2018-11-22
TWI785032B (zh) 2022-12-01
CN108807124B (zh) 2021-01-26

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