KR101871536B1 - 가스 배리어성 필름 - Google Patents

가스 배리어성 필름 Download PDF

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Publication number
KR101871536B1
KR101871536B1 KR1020137026419A KR20137026419A KR101871536B1 KR 101871536 B1 KR101871536 B1 KR 101871536B1 KR 1020137026419 A KR1020137026419 A KR 1020137026419A KR 20137026419 A KR20137026419 A KR 20137026419A KR 101871536 B1 KR101871536 B1 KR 101871536B1
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KR
South Korea
Prior art keywords
layer
gas barrier
barrier film
atomic
silicon
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KR1020137026419A
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English (en)
Korean (ko)
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KR20140018911A (ko
Inventor
히로유키 우에바야시
유스케 츠카무라
오사무 와타나베
Original Assignee
도레이 필름 카코우 가부시키가이샤
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Publication of KR20140018911A publication Critical patent/KR20140018911A/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H01L23/296—Organo-silicon compounds
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic Table
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/06—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03926—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate comprising a flexible substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/048—Encapsulation of modules
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24355—Continuous and nonuniform or irregular surface on layer or component [e.g., roofing, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
    • Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
    • Y10T428/264—Up to 3 mils
    • Y10T428/265—1 mil or less

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Laminated Bodies (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Inorganic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
KR1020137026419A 2011-04-05 2012-03-29 가스 배리어성 필름 KR101871536B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2011-083409 2011-04-05
JP2011083409 2011-04-05
PCT/JP2012/058388 WO2012137662A1 (ja) 2011-04-05 2012-03-29 ガスバリア性フィルム

Publications (2)

Publication Number Publication Date
KR20140018911A KR20140018911A (ko) 2014-02-13
KR101871536B1 true KR101871536B1 (ko) 2018-08-02

Family

ID=46969063

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KR1020137026419A KR101871536B1 (ko) 2011-04-05 2012-03-29 가스 배리어성 필름

Country Status (7)

Country Link
US (1) US9219018B2 (ja)
EP (1) EP2695732A4 (ja)
JP (2) JP6011337B2 (ja)
KR (1) KR101871536B1 (ja)
CN (1) CN103476579B (ja)
TW (2) TWI594892B (ja)
WO (1) WO2012137662A1 (ja)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012137662A1 (ja) * 2011-04-05 2012-10-11 東レ株式会社 ガスバリア性フィルム
US20150291753A1 (en) 2011-10-28 2015-10-15 Toray Industries, Inc. Gas barrier film
CN110300448B (zh) * 2012-10-08 2022-05-13 高通股份有限公司 针对lte tdd eimta的增强的上行链路和下行链路功率控制
CN104903089A (zh) 2013-01-11 2015-09-09 东丽株式会社 阻气性膜
US9878523B2 (en) 2013-03-29 2018-01-30 Toray Industries, Inc. Laminated film
WO2014163009A1 (ja) * 2013-04-04 2014-10-09 東レ株式会社 ガスバリア性フィルムおよびその製造方法
JP2014201033A (ja) * 2013-04-08 2014-10-27 コニカミノルタ株式会社 ガスバリア性フィルムおよびその製造方法
CN105829099B (zh) * 2013-12-25 2018-02-16 日本瑞翁株式会社 叠层膜、及复合膜的制造方法
CN105829093B (zh) 2014-01-29 2018-10-09 东丽株式会社 阻气性膜
CN106414062B (zh) * 2014-03-31 2019-06-04 大日本印刷株式会社 阻气性膜及其制备方法
CN104282847B (zh) * 2014-09-05 2017-04-12 石家庄铁道大学 一种可扰式钙钛矿型有机卤化物薄膜太阳能电池光阳极制备方法
JP6317681B2 (ja) * 2015-01-07 2018-04-25 富士フイルム株式会社 機能性フィルムおよび機能性フィルムの製造方法
CN104716270A (zh) * 2015-03-16 2015-06-17 上海和辉光电有限公司 一种薄膜封装结构和具有该结构的有机发光装置
KR102473646B1 (ko) * 2015-12-30 2022-12-01 엘지디스플레이 주식회사 배리어 필름, 편광판 및 표시장치의 제조 방법
JP2017144593A (ja) * 2016-02-16 2017-08-24 東レフィルム加工株式会社 ガスバリアフィルムの製造方法
KR102374301B1 (ko) * 2016-08-29 2022-03-15 도레이 카부시키가이샤 적층체
TWI675074B (zh) * 2016-12-09 2019-10-21 南韓商Ｌｇ化學股份有限公司 封裝組成物
CN108610896B (zh) * 2017-01-20 2020-05-29 宁波安特弗新材料科技有限公司 一种透明硬化层涂布液组合物、一种阻隔膜及一种量子点膜
CN110418859A (zh) * 2017-03-17 2019-11-05 柯尼卡美能达株式会社 气体阻隔膜、气体阻隔性膜、气体阻隔膜的制造方法、及气体阻隔性膜的制造方法
KR102582784B1 (ko) * 2017-03-30 2023-09-25 린텍 가부시키가이샤 기능성 필름 및 디바이스
JP6923415B2 (ja) * 2017-10-23 2021-08-18 日東電工株式会社 透明導電性フィルムおよび透明導電性フィルム積層体
JP7122108B2 (ja) * 2017-12-11 2022-08-19 株式会社きもと 電離放射線硬化性樹脂組成物、及びこれを用いたガスバリア層の保護膜、並びに、これらを用いた積層ガスバリア性フィルム
DE102019119600A1 (de) * 2019-07-19 2021-01-21 Brückner Maschinenbau GmbH & Co. KG Inline beschichtete biaxial orientierte Polyethylenfolie und Verfahren zu ihrer Herstellung
CN110412442B (zh) * 2019-07-30 2021-08-13 云谷（固安）科技有限公司 测试屏体及有机封装体的评估方法
JPWO2021095830A1 (ja) 2019-11-13 2021-05-20
JP2021123068A (ja) * 2020-02-07 2021-08-30 尾池工業株式会社 ガスバリアフィルム
WO2023120158A1 (ja) * 2021-12-24 2023-06-29 日東電工株式会社 防汚層付き光学フィルムおよびその製造方法
CN117295611A (zh) * 2021-12-24 2023-12-26 日东电工株式会社 带防污层的光学薄膜及其制造方法
CN116284938B (zh) * 2023-03-21 2023-10-20 江苏康辉新材料科技有限公司 一种高效水汽阻隔膜的制备方法

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JP4154069B2 (ja) * 1998-04-15 2008-09-24 株式会社クレハ ガスバリヤ性フィルム
JP2002113826A (ja) 2000-10-06 2002-04-16 Toppan Printing Co Ltd プラスチック基材及びそれを用いたガスバリアフィルム
WO2006049296A1 (ja) * 2004-11-08 2006-05-11 Mitsubishi Chemical Corporation 放射線硬化性組成物及びその硬化物、並びにその積層体
JP4716773B2 (ja) * 2005-04-06 2011-07-06 富士フイルム株式会社 ガスバリアフィルムとそれを用いた有機デバイス
JP5239230B2 (ja) * 2007-07-05 2013-07-17 凸版印刷株式会社 ガスバリアフィルム
JP2009083465A (ja) * 2007-09-14 2009-04-23 Fujifilm Corp ガスバリアフィルムおよびこれを用いた表示素子
CN101818331B (zh) * 2009-02-26 2013-10-09 富士胶片株式会社 功能性膜和用于制备功能性膜的方法
WO2012137662A1 (ja) * 2011-04-05 2012-10-11 東レ株式会社 ガスバリア性フィルム

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JP2002154184A (ja) 2000-08-07 2002-05-28 Jsr Corp 透明導電性シート
JP2005289041A (ja) * 2004-03-09 2005-10-20 Dainippon Printing Co Ltd 湾曲を防止したガスバリアフィルム
JP2009125965A (ja) * 2007-11-20 2009-06-11 Toppan Printing Co Ltd ガスバリアフィルム

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Publication number Publication date
CN103476579A (zh) 2013-12-25
US9219018B2 (en) 2015-12-22
US20140026961A1 (en) 2014-01-30
JPWO2012137662A1 (ja) 2014-07-28
TW201249655A (en) 2012-12-16
KR20140018911A (ko) 2014-02-13
EP2695732A4 (en) 2015-05-13
JP6391025B2 (ja) 2018-09-19
TWI546198B (zh) 2016-08-21
TWI594892B (zh) 2017-08-11
JP6011337B2 (ja) 2016-10-19
TW201634267A (zh) 2016-10-01
WO2012137662A1 (ja) 2012-10-11
CN103476579B (zh) 2015-11-25
JP2016185705A (ja) 2016-10-27
EP2695732A1 (en) 2014-02-12

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