KR101524712B1 - 블록화 이소시아네이트기를 갖는 실리콘 함유 레지스트 하층막 형성 조성물 - Google Patents
블록화 이소시아네이트기를 갖는 실리콘 함유 레지스트 하층막 형성 조성물 Download PDFInfo
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- KR101524712B1 KR101524712B1 KR1020107014591A KR20107014591A KR101524712B1 KR 101524712 B1 KR101524712 B1 KR 101524712B1 KR 1020107014591 A KR1020107014591 A KR 1020107014591A KR 20107014591 A KR20107014591 A KR 20107014591A KR 101524712 B1 KR101524712 B1 KR 101524712B1
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- resist
- film
- formula
- organic
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Materials For Photolithography (AREA)
- Silicon Polymers (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007311268 | 2007-11-30 | ||
JPJP-P-2007-311268 | 2007-11-30 | ||
JP2008011115 | 2008-01-22 | ||
JPJP-P-2008-011115 | 2008-01-22 | ||
PCT/JP2008/071577 WO2009069712A1 (ja) | 2007-11-30 | 2008-11-27 | ブロック化イソシアネート基を有するシリコン含有レジスト下層膜形成組成物 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20100099240A KR20100099240A (ko) | 2010-09-10 |
KR101524712B1 true KR101524712B1 (ko) | 2015-06-01 |
Family
ID=40678604
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020107014591A KR101524712B1 (ko) | 2007-11-30 | 2008-11-27 | 블록화 이소시아네이트기를 갖는 실리콘 함유 레지스트 하층막 형성 조성물 |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP5252234B2 (zh) |
KR (1) | KR101524712B1 (zh) |
CN (1) | CN101878451B (zh) |
TW (1) | TWI450042B (zh) |
WO (1) | WO2009069712A1 (zh) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7833692B2 (en) * | 2007-03-12 | 2010-11-16 | Brewer Science Inc. | Amine-arresting additives for materials used in photolithographic processes |
US8557877B2 (en) * | 2009-06-10 | 2013-10-15 | Honeywell International Inc. | Anti-reflective coatings for optically transparent substrates |
EP2669737A1 (en) * | 2011-01-24 | 2013-12-04 | Nissan Chemical Industries, Ltd. | Composition for forming resist underlayer films, containing silicon that bears diketone-structure-containing organic group |
US9093279B2 (en) * | 2011-07-20 | 2015-07-28 | Nissan Chemical Industries, Ltd. | Thin film forming composition for lithography containing titanium and silicon |
US9011591B2 (en) * | 2011-09-21 | 2015-04-21 | Dow Global Technologies Llc | Compositions and antireflective coatings for photolithography |
JP6510161B2 (ja) * | 2011-12-21 | 2019-05-08 | ダウ グローバル テクノロジーズ エルエルシー | 反射防止被膜用の組成物 |
WO2013187209A1 (ja) * | 2012-06-12 | 2013-12-19 | 株式会社Adeka | 感光性組成物 |
US20150184047A1 (en) * | 2012-08-30 | 2015-07-02 | Tokyo Ohka Kogyo Co., Ltd. | Method for modifying substrate surface, modifying film and coating solution used for modification of substrate surface |
KR102099712B1 (ko) | 2013-01-15 | 2020-04-10 | 삼성전자주식회사 | 패턴 형성 방법 및 이를 이용한 반도체 소자의 제조 방법 |
JP5830044B2 (ja) * | 2013-02-15 | 2015-12-09 | 信越化学工業株式会社 | レジスト下層膜形成用組成物及びパターン形成方法 |
JP6601628B2 (ja) * | 2014-05-22 | 2019-11-06 | 日産化学株式会社 | ブロックイソシアネート構造を含むポリマーを含むリソグラフィー用レジスト下層膜形成組成物 |
US11815815B2 (en) * | 2014-11-19 | 2023-11-14 | Nissan Chemical Industries, Ltd. | Composition for forming silicon-containing resist underlayer film removable by wet process |
US10372040B2 (en) * | 2014-12-08 | 2019-08-06 | Nissan Chemical Industries, Ltd. | Resist underlayer film forming composition for lithography containing hydrolyzable silane having halogen-containing carboxylic acid amide group |
EP3282318A4 (en) * | 2015-04-07 | 2018-08-15 | Mitsubishi Gas Chemical Company, Inc. | Material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography, and pattern formation method |
WO2018143359A1 (ja) * | 2017-02-03 | 2018-08-09 | 日産化学工業株式会社 | ウレア結合を有する構造単位を有するポリマーを含むレジスト下層膜形成組成物 |
KR20200098595A (ko) * | 2017-12-20 | 2020-08-20 | 닛산 가가쿠 가부시키가이샤 | 광경화성 실리콘함유 피복막 형성 조성물 |
US11326017B2 (en) * | 2018-09-10 | 2022-05-10 | Evonik Operations Gmbh | Tin-free catalysis of silane-functional polyurethane crosslinkers |
CN109111124A (zh) * | 2018-09-12 | 2019-01-01 | 江苏世泰实验器材有限公司 | 一种防粘连盖玻片及其制备方法 |
JP6981945B2 (ja) * | 2018-09-13 | 2021-12-17 | 信越化学工業株式会社 | パターン形成方法 |
KR20220161306A (ko) * | 2020-03-27 | 2022-12-06 | 제이에스알 가부시끼가이샤 | 전자선 또는 극단 자외선 리소그래피용 레지스트 하층막 형성 조성물, 전자선 또는 극단 자외선 리소그래피용 레지스트 하층막 및 반도체 기판의 제조 방법 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003122018A (ja) * | 2001-10-18 | 2003-04-25 | Shin Etsu Chem Co Ltd | 化学増幅型レジストパターン用表面処理剤及びパターン形成方法 |
KR20060111622A (ko) * | 2003-12-26 | 2006-10-27 | 후지 샤신 필름 가부시기가이샤 | 반사방지 필름, 편광판, 그의 제조 방법, 액정 디스플레이소자, 액정 디스플레이 장치, 및 영상 디스플레이 장치 |
JP2007178455A (ja) * | 2005-12-26 | 2007-07-12 | Tokyo Ohka Kogyo Co Ltd | レジスト下層膜用組成物、これを用いたレジスト下層膜及び基板のパターン形成方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW457403B (en) * | 1998-07-03 | 2001-10-01 | Clariant Int Ltd | Composition for forming a radiation absorbing coating containing blocked isocyanate compound and anti-reflective coating formed therefrom |
JP4491283B2 (ja) * | 2004-06-10 | 2010-06-30 | 信越化学工業株式会社 | 反射防止膜形成用組成物を用いたパターン形成方法 |
JP2007192875A (ja) * | 2006-01-17 | 2007-08-02 | Tokyo Ohka Kogyo Co Ltd | 下層膜形成用材料、積層体およびパターン形成方法 |
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2008
- 2008-11-27 KR KR1020107014591A patent/KR101524712B1/ko active IP Right Grant
- 2008-11-27 CN CN200880118089.4A patent/CN101878451B/zh active Active
- 2008-11-27 JP JP2009543854A patent/JP5252234B2/ja active Active
- 2008-11-27 WO PCT/JP2008/071577 patent/WO2009069712A1/ja active Application Filing
- 2008-11-28 TW TW097146378A patent/TWI450042B/zh active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003122018A (ja) * | 2001-10-18 | 2003-04-25 | Shin Etsu Chem Co Ltd | 化学増幅型レジストパターン用表面処理剤及びパターン形成方法 |
KR20060111622A (ko) * | 2003-12-26 | 2006-10-27 | 후지 샤신 필름 가부시기가이샤 | 반사방지 필름, 편광판, 그의 제조 방법, 액정 디스플레이소자, 액정 디스플레이 장치, 및 영상 디스플레이 장치 |
JP2007178455A (ja) * | 2005-12-26 | 2007-07-12 | Tokyo Ohka Kogyo Co Ltd | レジスト下層膜用組成物、これを用いたレジスト下層膜及び基板のパターン形成方法 |
Also Published As
Publication number | Publication date |
---|---|
CN101878451A (zh) | 2010-11-03 |
KR20100099240A (ko) | 2010-09-10 |
TW200941145A (en) | 2009-10-01 |
TWI450042B (zh) | 2014-08-21 |
JPWO2009069712A1 (ja) | 2011-04-14 |
JP5252234B2 (ja) | 2013-07-31 |
CN101878451B (zh) | 2013-04-24 |
WO2009069712A1 (ja) | 2009-06-04 |
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