KR101524712B1 - 블록화 이소시아네이트기를 갖는 실리콘 함유 레지스트 하층막 형성 조성물 - Google Patents

블록화 이소시아네이트기를 갖는 실리콘 함유 레지스트 하층막 형성 조성물 Download PDF

Info

Publication number
KR101524712B1
KR101524712B1 KR1020107014591A KR20107014591A KR101524712B1 KR 101524712 B1 KR101524712 B1 KR 101524712B1 KR 1020107014591 A KR1020107014591 A KR 1020107014591A KR 20107014591 A KR20107014591 A KR 20107014591A KR 101524712 B1 KR101524712 B1 KR 101524712B1
Authority
KR
South Korea
Prior art keywords
group
resist
film
formula
organic
Prior art date
Application number
KR1020107014591A
Other languages
English (en)
Korean (ko)
Other versions
KR20100099240A (ko
Inventor
마코토 나카지마
유타 카노
와타루 시바야마
Original Assignee
닛산 가가쿠 고교 가부시키 가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 닛산 가가쿠 고교 가부시키 가이샤 filed Critical 닛산 가가쿠 고교 가부시키 가이샤
Publication of KR20100099240A publication Critical patent/KR20100099240A/ko
Application granted granted Critical
Publication of KR101524712B1 publication Critical patent/KR101524712B1/ko

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Silicon Polymers (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020107014591A 2007-11-30 2008-11-27 블록화 이소시아네이트기를 갖는 실리콘 함유 레지스트 하층막 형성 조성물 KR101524712B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2007311268 2007-11-30
JPJP-P-2007-311268 2007-11-30
JP2008011115 2008-01-22
JPJP-P-2008-011115 2008-01-22
PCT/JP2008/071577 WO2009069712A1 (ja) 2007-11-30 2008-11-27 ブロック化イソシアネート基を有するシリコン含有レジスト下層膜形成組成物

Publications (2)

Publication Number Publication Date
KR20100099240A KR20100099240A (ko) 2010-09-10
KR101524712B1 true KR101524712B1 (ko) 2015-06-01

Family

ID=40678604

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020107014591A KR101524712B1 (ko) 2007-11-30 2008-11-27 블록화 이소시아네이트기를 갖는 실리콘 함유 레지스트 하층막 형성 조성물

Country Status (5)

Country Link
JP (1) JP5252234B2 (zh)
KR (1) KR101524712B1 (zh)
CN (1) CN101878451B (zh)
TW (1) TWI450042B (zh)
WO (1) WO2009069712A1 (zh)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7833692B2 (en) * 2007-03-12 2010-11-16 Brewer Science Inc. Amine-arresting additives for materials used in photolithographic processes
US8557877B2 (en) * 2009-06-10 2013-10-15 Honeywell International Inc. Anti-reflective coatings for optically transparent substrates
EP2669737A1 (en) * 2011-01-24 2013-12-04 Nissan Chemical Industries, Ltd. Composition for forming resist underlayer films, containing silicon that bears diketone-structure-containing organic group
US9093279B2 (en) * 2011-07-20 2015-07-28 Nissan Chemical Industries, Ltd. Thin film forming composition for lithography containing titanium and silicon
US9011591B2 (en) * 2011-09-21 2015-04-21 Dow Global Technologies Llc Compositions and antireflective coatings for photolithography
JP6510161B2 (ja) * 2011-12-21 2019-05-08 ダウ グローバル テクノロジーズ エルエルシー 反射防止被膜用の組成物
WO2013187209A1 (ja) * 2012-06-12 2013-12-19 株式会社Adeka 感光性組成物
US20150184047A1 (en) * 2012-08-30 2015-07-02 Tokyo Ohka Kogyo Co., Ltd. Method for modifying substrate surface, modifying film and coating solution used for modification of substrate surface
KR102099712B1 (ko) 2013-01-15 2020-04-10 삼성전자주식회사 패턴 형성 방법 및 이를 이용한 반도체 소자의 제조 방법
JP5830044B2 (ja) * 2013-02-15 2015-12-09 信越化学工業株式会社 レジスト下層膜形成用組成物及びパターン形成方法
JP6601628B2 (ja) * 2014-05-22 2019-11-06 日産化学株式会社 ブロックイソシアネート構造を含むポリマーを含むリソグラフィー用レジスト下層膜形成組成物
US11815815B2 (en) * 2014-11-19 2023-11-14 Nissan Chemical Industries, Ltd. Composition for forming silicon-containing resist underlayer film removable by wet process
US10372040B2 (en) * 2014-12-08 2019-08-06 Nissan Chemical Industries, Ltd. Resist underlayer film forming composition for lithography containing hydrolyzable silane having halogen-containing carboxylic acid amide group
EP3282318A4 (en) * 2015-04-07 2018-08-15 Mitsubishi Gas Chemical Company, Inc. Material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography, and pattern formation method
WO2018143359A1 (ja) * 2017-02-03 2018-08-09 日産化学工業株式会社 ウレア結合を有する構造単位を有するポリマーを含むレジスト下層膜形成組成物
KR20200098595A (ko) * 2017-12-20 2020-08-20 닛산 가가쿠 가부시키가이샤 광경화성 실리콘함유 피복막 형성 조성물
US11326017B2 (en) * 2018-09-10 2022-05-10 Evonik Operations Gmbh Tin-free catalysis of silane-functional polyurethane crosslinkers
CN109111124A (zh) * 2018-09-12 2019-01-01 江苏世泰实验器材有限公司 一种防粘连盖玻片及其制备方法
JP6981945B2 (ja) * 2018-09-13 2021-12-17 信越化学工業株式会社 パターン形成方法
KR20220161306A (ko) * 2020-03-27 2022-12-06 제이에스알 가부시끼가이샤 전자선 또는 극단 자외선 리소그래피용 레지스트 하층막 형성 조성물, 전자선 또는 극단 자외선 리소그래피용 레지스트 하층막 및 반도체 기판의 제조 방법

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003122018A (ja) * 2001-10-18 2003-04-25 Shin Etsu Chem Co Ltd 化学増幅型レジストパターン用表面処理剤及びパターン形成方法
KR20060111622A (ko) * 2003-12-26 2006-10-27 후지 샤신 필름 가부시기가이샤 반사방지 필름, 편광판, 그의 제조 방법, 액정 디스플레이소자, 액정 디스플레이 장치, 및 영상 디스플레이 장치
JP2007178455A (ja) * 2005-12-26 2007-07-12 Tokyo Ohka Kogyo Co Ltd レジスト下層膜用組成物、これを用いたレジスト下層膜及び基板のパターン形成方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW457403B (en) * 1998-07-03 2001-10-01 Clariant Int Ltd Composition for forming a radiation absorbing coating containing blocked isocyanate compound and anti-reflective coating formed therefrom
JP4491283B2 (ja) * 2004-06-10 2010-06-30 信越化学工業株式会社 反射防止膜形成用組成物を用いたパターン形成方法
JP2007192875A (ja) * 2006-01-17 2007-08-02 Tokyo Ohka Kogyo Co Ltd 下層膜形成用材料、積層体およびパターン形成方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003122018A (ja) * 2001-10-18 2003-04-25 Shin Etsu Chem Co Ltd 化学増幅型レジストパターン用表面処理剤及びパターン形成方法
KR20060111622A (ko) * 2003-12-26 2006-10-27 후지 샤신 필름 가부시기가이샤 반사방지 필름, 편광판, 그의 제조 방법, 액정 디스플레이소자, 액정 디스플레이 장치, 및 영상 디스플레이 장치
JP2007178455A (ja) * 2005-12-26 2007-07-12 Tokyo Ohka Kogyo Co Ltd レジスト下層膜用組成物、これを用いたレジスト下層膜及び基板のパターン形成方法

Also Published As

Publication number Publication date
CN101878451A (zh) 2010-11-03
KR20100099240A (ko) 2010-09-10
TW200941145A (en) 2009-10-01
TWI450042B (zh) 2014-08-21
JPWO2009069712A1 (ja) 2011-04-14
JP5252234B2 (ja) 2013-07-31
CN101878451B (zh) 2013-04-24
WO2009069712A1 (ja) 2009-06-04

Similar Documents

Publication Publication Date Title
KR101524712B1 (ko) 블록화 이소시아네이트기를 갖는 실리콘 함유 레지스트 하층막 형성 조성물
KR101579266B1 (ko) 우레아기를 가지는 실리콘 함유 레지스트 하층막 형성 조성물
KR101749601B1 (ko) 설폰아미드기를 가지는 실리콘 함유 레지스트 하층막 형성 조성물
KR101655251B1 (ko) 환상 아미노기를 갖는 실리콘 함유 레지스트 하층막 형성 조성물
KR101764259B1 (ko) 설파이드 결합을 갖는 실리콘 함유 레지스트 하층막 형성 조성물
KR101766815B1 (ko) 음이온기를 가지는 실리콘 함유 레지스트 하층막 형성 조성물
KR102061530B1 (ko) 질소 함유환을 가지는 실리콘 함유 레지스트 하층막 형성 조성물
US10845703B2 (en) Film-forming composition containing silicone having crosslinking reactivity
JP5152532B2 (ja) 窒素含有シリル基を含むポリマーを含有するレジスト下層膜形成組成物
KR101847382B1 (ko) 아믹산을 포함하는 실리콘 함유 레지스트 하층막 형성 조성물
KR102417843B1 (ko) 할로겐화설포닐알킬기를 가지는 실리콘 함유 레지스트 하층막 형성 조성물
KR101921513B1 (ko) 디케톤 구조 함유 유기기를 포함하는 실리콘 함유 레지스트 하층막 형성 조성물
US10197917B2 (en) Silicon-containing resists underlayer film-forming composition having phenyl group-containing chromophore
KR20150081269A (ko) 에스테르기를 갖는 실리콘함유 레지스트 하층막 형성조성물
KR20150063416A (ko) 헤테로원자를 갖는 환상유기기함유 실리콘함유 레지스트 하층막 형성조성물
JP7157392B2 (ja) アルカリ性現像液可溶性シリコン含有レジスト下層膜形成組成物

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E601 Decision to refuse application
J201 Request for trial against refusal decision
B901 Examination by re-examination before a trial
B701 Decision to grant
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20180503

Year of fee payment: 4

FPAY Annual fee payment

Payment date: 20190503

Year of fee payment: 5