KR101346897B1 - 에칭 방법 및 플라즈마 처리 시스템 - Google Patents

에칭 방법 및 플라즈마 처리 시스템 Download PDF

Info

Publication number: KR101346897B1
Authority: KR; South Korea
Prior art keywords: plasma; mask layer; power; etching; electron beam
Prior art date: 2006-08-07

Application number

KR1020097004272A

Other languages

English (en)

Korean (ko)

Other versions

KR20090037495A (ko

Inventor

피터 엘.지. 벤체크

리 첸

아키라 고시이시

이쿠오 사와다

Original Assignee

도쿄엘렉트론가부시키가이샤

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2006-08-07

Filing date

2007-06-05

Publication date

2014-01-02

2006-08-07 Priority claimed from US11/499,678 external-priority patent/US7449414B2/en

2006-08-07 Priority claimed from US11/499,680 external-priority patent/US7642193B2/en

2006-08-07 Priority claimed from US11/499,679 external-priority patent/US7572386B2/en

2007-06-05 Application filed by 도쿄엘렉트론가부시키가이샤 filed Critical 도쿄엘렉트론가부시키가이샤

2009-04-15 Publication of KR20090037495A publication Critical patent/KR20090037495A/ko

2014-01-02 Application granted granted Critical

2014-01-02 Publication of KR101346897B1 publication Critical patent/KR101346897B1/ko

Links

238000000034 method Methods 0.000 title claims abstract description 180
238000005530 etching Methods 0.000 title claims abstract description 150
238000012545 processing Methods 0.000 title claims description 224
238000010894 electron beam technology Methods 0.000 claims abstract description 119
239000007789 gas Substances 0.000 claims abstract description 105
230000008569 process Effects 0.000 claims abstract description 91
239000010409 thin film Substances 0.000 claims abstract description 48
229910052736 halogen Inorganic materials 0.000 claims abstract description 36
150000002367 halogens Chemical class 0.000 claims abstract description 36
229910052760 oxygen Inorganic materials 0.000 claims abstract description 31
QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 26
239000001301 oxygen Substances 0.000 claims abstract description 26
239000010410 layer Substances 0.000 claims description 211
239000000758 substrate Substances 0.000 claims description 143
230000008878 coupling Effects 0.000 claims description 45
238000010168 coupling process Methods 0.000 claims description 45
238000005859 coupling reaction Methods 0.000 claims description 45
239000011241 protective layer Substances 0.000 claims description 33
230000008021 deposition Effects 0.000 claims description 17
238000012546 transfer Methods 0.000 claims description 17
238000001020 plasma etching Methods 0.000 claims description 9
238000009826 distribution Methods 0.000 claims description 7
LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 6
239000011261 inert gas Substances 0.000 claims description 6
239000000203 mixture Substances 0.000 claims description 6
229910052799 carbon Inorganic materials 0.000 claims description 5
229910052731 fluorine Inorganic materials 0.000 claims description 5
239000004215 Carbon black (E152) Substances 0.000 claims description 4
NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims description 4
230000004907 flux Effects 0.000 claims description 4
229910052734 helium Inorganic materials 0.000 claims description 4
229930195733 hydrocarbon Natural products 0.000 claims description 4
150000002430 hydrocarbons Chemical class 0.000 claims description 4
229910052757 nitrogen Inorganic materials 0.000 claims description 4
230000008093 supporting effect Effects 0.000 claims description 4
229910052786 argon Inorganic materials 0.000 claims description 3
229910052743 krypton Inorganic materials 0.000 claims description 3
229910052754 neon Inorganic materials 0.000 claims description 3
229910052724 xenon Inorganic materials 0.000 claims description 3
229910003902 SiCl 4 Inorganic materials 0.000 claims description 2
OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 2
238000007654 immersion Methods 0.000 claims 2
229910052698 phosphorus Inorganic materials 0.000 claims 2
239000011574 phosphorus Substances 0.000 claims 2
-1 NF 3 Inorganic materials 0.000 claims 1
239000010408 film Substances 0.000 abstract description 11
238000000151 deposition Methods 0.000 description 18
239000000463 material Substances 0.000 description 16
230000006698 induction Effects 0.000 description 12
229920002120 photoresistant polymer Polymers 0.000 description 11
230000015572 biosynthetic process Effects 0.000 description 10
150000002500 ions Chemical class 0.000 description 10
239000000126 substance Substances 0.000 description 10
238000011282 treatment Methods 0.000 description 9
238000010586 diagram Methods 0.000 description 8
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
229920000642 polymer Polymers 0.000 description 7
229910052710 silicon Inorganic materials 0.000 description 7
239000010703 silicon Substances 0.000 description 7
238000005086 pumping Methods 0.000 description 6
239000002344 surface layer Substances 0.000 description 6
239000003085 diluting agent Substances 0.000 description 5
238000010438 heat treatment Methods 0.000 description 5
230000002159 abnormal effect Effects 0.000 description 4
238000013461 design Methods 0.000 description 4
YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 3
238000001816 cooling Methods 0.000 description 3
238000010494 dissociation reaction Methods 0.000 description 3
230000005593 dissociations Effects 0.000 description 3
230000005284 excitation Effects 0.000 description 3
230000001976 improved effect Effects 0.000 description 3
238000009616 inductively coupled plasma Methods 0.000 description 3
238000012544 monitoring process Methods 0.000 description 3
239000004065 semiconductor Substances 0.000 description 3
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
239000006117 anti-reflective coating Substances 0.000 description 2
238000010790 dilution Methods 0.000 description 2
239000012895 dilution Substances 0.000 description 2
239000012530 fluid Substances 0.000 description 2
239000011737 fluorine Substances 0.000 description 2
229910052739 hydrogen Inorganic materials 0.000 description 2
238000002347 injection Methods 0.000 description 2
239000007924 injection Substances 0.000 description 2
238000012986 modification Methods 0.000 description 2
230000004048 modification Effects 0.000 description 2
238000000059 patterning Methods 0.000 description 2
230000035515 penetration Effects 0.000 description 2
BSYNRYMUTXBXSQ-UHFFFAOYSA-N Aspirin Chemical compound CC(=O)OC1=CC=CC=C1C(O)=O BSYNRYMUTXBXSQ-UHFFFAOYSA-N 0.000 description 1
OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
229910052581 Si3N4 Inorganic materials 0.000 description 1
229910004298 SiO 2 Inorganic materials 0.000 description 1
230000009471 action Effects 0.000 description 1
239000000654 additive Substances 0.000 description 1
230000000996 additive effect Effects 0.000 description 1
230000005540 biological transmission Effects 0.000 description 1
238000009529 body temperature measurement Methods 0.000 description 1
229910052794 bromium Inorganic materials 0.000 description 1
230000008859 change Effects 0.000 description 1
229910052801 chlorine Inorganic materials 0.000 description 1
238000003776 cleavage reaction Methods 0.000 description 1
230000000254 damaging effect Effects 0.000 description 1
230000007547 defect Effects 0.000 description 1
238000011161 development Methods 0.000 description 1
238000005315 distribution function Methods 0.000 description 1
230000006870 function Effects 0.000 description 1
239000001307 helium Substances 0.000 description 1
SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
239000001257 hydrogen Substances 0.000 description 1
230000001939 inductive effect Effects 0.000 description 1
239000012212 insulator Substances 0.000 description 1
239000004973 liquid crystal related substance Substances 0.000 description 1
230000007774 longterm Effects 0.000 description 1
238000004519 manufacturing process Methods 0.000 description 1
230000007246 mechanism Effects 0.000 description 1
238000001393 microlithography Methods 0.000 description 1
230000000116 mitigating effect Effects 0.000 description 1
229910052756 noble gas Inorganic materials 0.000 description 1
230000003647 oxidation Effects 0.000 description 1
238000007254 oxidation reaction Methods 0.000 description 1
235000012771 pancakes Nutrition 0.000 description 1
238000009832 plasma treatment Methods 0.000 description 1
229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
229920006254 polymer film Polymers 0.000 description 1
229920005591 polysilicon Polymers 0.000 description 1
238000003672 processing method Methods 0.000 description 1
230000001681 protective effect Effects 0.000 description 1
230000005855 radiation Effects 0.000 description 1
239000000376 reactant Substances 0.000 description 1
230000003134 recirculating effect Effects 0.000 description 1
230000007017 scission Effects 0.000 description 1
235000012239 silicon dioxide Nutrition 0.000 description 1
239000000377 silicon dioxide Substances 0.000 description 1
HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
239000002904 solvent Substances 0.000 description 1
238000004544 sputter deposition Methods 0.000 description 1

Images

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32321—Discharge generated by other radiation
- H01J37/3233—Discharge generated by other radiation using charged particles
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks

Landscapes

Engineering & Computer Science (AREA)
Physics & Mathematics (AREA)
General Physics & Mathematics (AREA)
Microelectronics & Electronic Packaging (AREA)
Manufacturing & Machinery (AREA)
Computer Hardware Design (AREA)
Condensed Matter Physics & Semiconductors (AREA)
Power Engineering (AREA)
Plasma & Fusion (AREA)
Chemical & Material Sciences (AREA)
Analytical Chemistry (AREA)
Inorganic Chemistry (AREA)
Drying Of Semiconductors (AREA)

KR1020097004272A 2006-08-07 2007-06-05 에칭 방법 및 플라즈마 처리 시스템 KR101346897B1 (ko)

Applications Claiming Priority (7)

Application Number	Priority Date	Filing Date	Title
US11/499,678		2006-08-07
US11/499,678 US7449414B2 (en)	2006-08-07	2006-08-07	Method of treating a mask layer prior to performing an etching process
US11/499,679		2006-08-07
US11/499,680 US7642193B2 (en)	2006-08-07	2006-08-07	Method of treating a mask layer prior to performing an etching process
US11/499,680		2006-08-07
US11/499,679 US7572386B2 (en)	2006-08-07	2006-08-07	Method of treating a mask layer prior to performing an etching process
PCT/US2007/070375 WO2008021609A1 (en)	2006-08-07	2007-06-05	Method of treating a mask layer prior to performing an etching process

Publications (2)

Publication Number	Publication Date
KR20090037495A KR20090037495A (ko)	2009-04-15
KR101346897B1 true KR101346897B1 (ko)	2014-01-02

Family

ID=39082334

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
KR1020097004272A KR101346897B1 (ko)	2006-08-07	2007-06-05	에칭 방법 및 플라즈마 처리 시스템

Country Status (4)

Country	Link
JP (1)	JP5271267B2 (ja)
KR (1)	KR101346897B1 (ja)
TW (2)	TWI445074B (ja)
WO (1)	WO2008021609A1 (ja)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP5578782B2 (ja) *	2008-03-31	2014-08-27	東京エレクトロン株式会社	プラズマ処理方法及びコンピュータ読み取り可能な記憶媒体
JP5171683B2 (ja) *	2009-02-18	2013-03-27	東京エレクトロン株式会社	プラズマ処理方法
US9373521B2 (en)	2010-02-24	2016-06-21	Tokyo Electron Limited	Etching processing method
JP5662079B2 (ja) *	2010-02-24	2015-01-28	東京エレクトロン株式会社	エッチング処理方法
CN102543687B (zh) *	2011-11-30	2015-08-05	中微半导体设备(上海)有限公司	掩膜层的刻蚀方法、刻蚀装置及层间介质层的刻蚀方法
JP6243722B2 (ja) *	2013-12-10	2017-12-06	東京エレクトロン株式会社	エッチング処理方法
US9368368B2 (en) *	2014-07-21	2016-06-14	Tokyo Electron Limited	Method for increasing oxide etch selectivity
JP6587580B2 (ja)	2016-06-10	2019-10-09	東京エレクトロン株式会社	エッチング処理方法
US10020183B1 (en) *	2017-06-29	2018-07-10	Lam Research Corporation	Edge roughness reduction
JP2023170791A (ja) *	2022-05-20	2023-12-01	東京エレクトロン株式会社	改質方法及び改質装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US6093332A (en) *	1998-02-04	2000-07-25	Lam Research Corporation	Methods for reducing mask erosion during plasma etching
JP2005072518A (ja)	2003-08-28	2005-03-17	Hitachi Ltd	半導体装置の製造方法およびその装置
JP2006514783A (ja)	2002-10-11	2006-05-11	ラム　リサーチ　コーポレーション	プラズマエッチングのパフォーマンスを改善する方法
KR20060086865A (ko) *	2005-01-27	2006-08-01	어플라이드 머티어리얼스, 인코포레이티드	포토마스크 제조에 적합한 크롬층의 플라즈마 에칭 방법

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS5641234A (en) *	1979-09-10	1981-04-17	Asahi Chem Ind Co Ltd	Novel molding dope composition
US5597438A (en) *	1995-09-14	1997-01-28	Siemens Aktiengesellschaft	Etch chamber having three independently controlled electrodes
JP4672456B2 (ja) *	2004-06-21	2011-04-20	東京エレクトロン株式会社	プラズマ処理装置
JP4672455B2 (ja) *	2004-06-21	2011-04-20	東京エレクトロン株式会社	プラズマエッチング装置およびプラズマエッチング方法、ならびにコンピュータ読み取り可能な記憶媒体
JP4827081B2 (ja) *	2005-12-28	2011-11-30	東京エレクトロン株式会社	プラズマエッチング方法およびコンピュータ読み取り可能な記憶媒体
JP5011782B2 (ja) *	2006-03-28	2012-08-29	東京エレクトロン株式会社	半導体装置の製造方法、プラズマ処理装置及び記憶媒体。
US8083961B2 (en) *	2006-07-31	2011-12-27	Tokyo Electron Limited	Method and system for controlling the uniformity of a ballistic electron beam by RF modulation

2007
- 2007-06-05 JP JP2009523873A patent/JP5271267B2/ja not_active Expired - Fee Related
- 2007-06-05 KR KR1020097004272A patent/KR101346897B1/ko active IP Right Grant
- 2007-06-05 WO PCT/US2007/070375 patent/WO2008021609A1/en active Application Filing
- 2007-08-07 TW TW096129002A patent/TWI445074B/zh not_active IP Right Cessation
- 2007-08-07 TW TW102148013A patent/TWI443743B/zh not_active IP Right Cessation

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US6093332A (en) *	1998-02-04	2000-07-25	Lam Research Corporation	Methods for reducing mask erosion during plasma etching
JP2006514783A (ja)	2002-10-11	2006-05-11	ラム　リサーチ　コーポレーション	プラズマエッチングのパフォーマンスを改善する方法
JP2005072518A (ja)	2003-08-28	2005-03-17	Hitachi Ltd	半導体装置の製造方法およびその装置
KR20060086865A (ko) *	2005-01-27	2006-08-01	어플라이드 머티어리얼스, 인코포레이티드	포토마스크 제조에 적합한 크롬층의 플라즈마 에칭 방법

Also Published As

Publication number	Publication date
KR20090037495A (ko)	2009-04-15
TW200828432A (en)	2008-07-01
JP5271267B2 (ja)	2013-08-21
TWI443743B (zh)	2014-07-01
TW201419411A (zh)	2014-05-16
JP2010500758A (ja)	2010-01-07
TWI445074B (zh)	2014-07-11
WO2008021609A1 (en)	2008-02-21

Legal Events

Date	Code	Title	Description
2012-06-05	A201	Request for examination
2013-08-23	E902	Notification of reason for refusal
2013-11-26	E701	Decision to grant or registration of patent right
2013-12-24	GRNT	Written decision to grant
2016-11-22	FPAY	Annual fee payment	Payment date: 20161122 Year of fee payment: 4
2017-11-20	FPAY	Annual fee payment	Payment date: 20171120 Year of fee payment: 5
2018-12-19	FPAY	Annual fee payment	Payment date: 20181219 Year of fee payment: 6
2019-12-16	FPAY	Annual fee payment	Payment date: 20191217 Year of fee payment: 7

Publication	Publication Date	Title
US7449414B2 (en)	2008-11-11	Method of treating a mask layer prior to performing an etching process
KR101346897B1 (ko)	2014-01-02	에칭 방법 및 플라즈마 처리 시스템
KR101333924B1 (ko)	2013-11-27	에칭 방법, 컴퓨터 판독 가능한 기록 매체, 및 플라즈마 처리 시스템
US7829469B2 (en)	2010-11-09	Method and system for uniformity control in ballistic electron beam enhanced plasma processing system
US7416677B2 (en)	2008-08-26	Exhaust assembly for plasma processing system and method
CN107431011B (zh)	2021-08-24	用于原子层蚀刻的方法
US7572386B2 (en)	2009-08-11	Method of treating a mask layer prior to performing an etching process
US7754615B2 (en)	2010-07-13	Method and apparatus for detecting endpoint in a dry etching system by monitoring a superimposed DC current
JP5674375B2 (ja)	2015-02-25	プラズマ処理方法及びプラズマ処理装置
TWI423323B (zh)	2014-01-11	光阻剝離室及蝕刻基材上光阻之方法
JP5238704B2 (ja)	2013-07-17	ハフニウム含有材料を乾式エッチングする方法およびシステム
US7642193B2 (en)	2010-01-05	Method of treating a mask layer prior to performing an etching process
JP2008244479A (ja)	2008-10-09	金属窒化物を乾式エッチングする方法及びシステム
KR101414307B1 (ko)	2014-08-06	반도체 처리에 있어서 마스크를 제공하는 방법 및 장치
JP2014512096A (ja)	2014-05-19	多層マスクのパターン限界寸法及びインテグリティを制御するためのエッチングプロセス
KR20110018266A (ko)	2011-02-23	Ｓｆ６ 및 탄화수소를 이용하여 ａｒｃ층을 패터닝하는 방법
KR20110013265A (ko)	2011-02-09	Ｃｏ2/ｃｏ계 처리를 이용하여 기판을 애싱하기 위한 저손상 방법
KR101540816B1 (ko)	2015-07-30	플라즈마 에칭 방법, 컴퓨터 기억 매체 및 플라즈마 에칭 장치
KR20190011600A (ko)	2019-02-07	플라즈마 처리 장치 및 방법, 및 이를 이용한 반도체 장치의 제조 방법
Pu	2023	Plasma Etch Equipment
JP3172340B2 (ja)	2001-06-04	プラズマ処理装置
JP2003234328A (ja)	2003-08-22	エッチング方法
JP2020177958A (ja)	2020-10-29	基板処理方法及び基板処理装置
JP2003332317A (ja)	2003-11-21	プラズマを用いたレジスト剥離装置及び方法