KR101267718B1 - 광반도체 장치용 리드 프레임 및 그 제조방법 - Google Patents
광반도체 장치용 리드 프레임 및 그 제조방법 Download PDFInfo
- Publication number
- KR101267718B1 KR101267718B1 KR1020117016384A KR20117016384A KR101267718B1 KR 101267718 B1 KR101267718 B1 KR 101267718B1 KR 1020117016384 A KR1020117016384 A KR 1020117016384A KR 20117016384 A KR20117016384 A KR 20117016384A KR 101267718 B1 KR101267718 B1 KR 101267718B1
- Authority
- KR
- South Korea
- Prior art keywords
- silver
- alloys
- lead frame
- optical semiconductor
- semiconductor device
- Prior art date
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 81
- 239000004065 semiconductor Substances 0.000 title claims abstract description 80
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 92
- 229910052709 silver Inorganic materials 0.000 claims abstract description 91
- 239000004332 silver Substances 0.000 claims abstract description 91
- 230000007797 corrosion Effects 0.000 claims abstract description 48
- 238000005260 corrosion Methods 0.000 claims abstract description 48
- 239000007769 metal material Substances 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 21
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 18
- 239000000956 alloy Substances 0.000 claims description 18
- 229910052751 metal Inorganic materials 0.000 claims description 18
- 239000002184 metal Substances 0.000 claims description 18
- 229910045601 alloy Inorganic materials 0.000 claims description 17
- 239000010949 copper Substances 0.000 claims description 17
- 229910001316 Ag alloy Inorganic materials 0.000 claims description 16
- 229910052802 copper Inorganic materials 0.000 claims description 16
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 15
- 229910001020 Au alloy Inorganic materials 0.000 claims description 13
- 229910000846 In alloy Inorganic materials 0.000 claims description 13
- 229910000629 Rh alloy Inorganic materials 0.000 claims description 13
- 239000003353 gold alloy Substances 0.000 claims description 13
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 13
- 239000011248 coating agent Substances 0.000 claims description 11
- 238000000576 coating method Methods 0.000 claims description 11
- 229910000838 Al alloy Inorganic materials 0.000 claims description 9
- 229910052782 aluminium Inorganic materials 0.000 claims description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 9
- 229910052759 nickel Inorganic materials 0.000 claims description 9
- NEIHULKJZQTQKJ-UHFFFAOYSA-N [Cu].[Ag] Chemical compound [Cu].[Ag] NEIHULKJZQTQKJ-UHFFFAOYSA-N 0.000 claims description 8
- IOBIJTFWSZQXPN-UHFFFAOYSA-N [Rh].[Ag] Chemical compound [Rh].[Ag] IOBIJTFWSZQXPN-UHFFFAOYSA-N 0.000 claims description 8
- 238000009713 electroplating Methods 0.000 claims description 8
- PQTCMBYFWMFIGM-UHFFFAOYSA-N gold silver Chemical compound [Ag].[Au] PQTCMBYFWMFIGM-UHFFFAOYSA-N 0.000 claims description 8
- YZASAXHKAQYPEH-UHFFFAOYSA-N indium silver Chemical compound [Ag].[In] YZASAXHKAQYPEH-UHFFFAOYSA-N 0.000 claims description 8
- 239000010948 rhodium Substances 0.000 claims description 8
- 229910000990 Ni alloy Inorganic materials 0.000 claims description 7
- 239000010931 gold Substances 0.000 claims description 7
- 229910052738 indium Inorganic materials 0.000 claims description 7
- 229910052703 rhodium Inorganic materials 0.000 claims description 7
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims description 7
- 229910000531 Co alloy Inorganic materials 0.000 claims description 6
- 229910017052 cobalt Inorganic materials 0.000 claims description 6
- 239000010941 cobalt Substances 0.000 claims description 6
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 6
- 239000007789 gas Substances 0.000 claims description 6
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 6
- 229910001260 Pt alloy Inorganic materials 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 229910052697 platinum Inorganic materials 0.000 claims description 5
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 claims description 2
- 229910000037 hydrogen sulfide Inorganic materials 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 108
- 238000007747 plating Methods 0.000 description 80
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 10
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 9
- 230000017525 heat dissipation Effects 0.000 description 8
- 230000007774 longterm Effects 0.000 description 6
- 229910000640 Fe alloy Inorganic materials 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 230000007423 decrease Effects 0.000 description 5
- 238000005238 degreasing Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- LFAGQMCIGQNPJG-UHFFFAOYSA-N silver cyanide Chemical compound [Ag+].N#[C-] LFAGQMCIGQNPJG-UHFFFAOYSA-N 0.000 description 5
- 239000002344 surface layer Substances 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 229910052763 palladium Inorganic materials 0.000 description 4
- 238000005554 pickling Methods 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 239000010944 silver (metal) Substances 0.000 description 4
- 238000005486 sulfidation Methods 0.000 description 4
- 230000003746 surface roughness Effects 0.000 description 4
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical group [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 3
- 230000033228 biological regulation Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 238000002845 discoloration Methods 0.000 description 3
- 230000002349 favourable effect Effects 0.000 description 3
- 238000013508 migration Methods 0.000 description 3
- 230000005012 migration Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 229910052717 sulfur Inorganic materials 0.000 description 3
- 239000011593 sulfur Substances 0.000 description 3
- 229910021617 Indium monochloride Inorganic materials 0.000 description 2
- 241000080590 Niso Species 0.000 description 2
- 229910001252 Pd alloy Inorganic materials 0.000 description 2
- GLUUGHFHXGJENI-UHFFFAOYSA-N Piperazine Chemical compound C1CNCCN1 GLUUGHFHXGJENI-UHFFFAOYSA-N 0.000 description 2
- 229910000929 Ru alloy Inorganic materials 0.000 description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- APHGZSBLRQFRCA-UHFFFAOYSA-M indium(1+);chloride Chemical compound [In]Cl APHGZSBLRQFRCA-UHFFFAOYSA-M 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 229910017944 Ag—Cu Inorganic materials 0.000 description 1
- 229910017392 Au—Co Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229920001353 Dextrin Polymers 0.000 description 1
- 239000004375 Dextrin Substances 0.000 description 1
- BWGNESOTFCXPMA-UHFFFAOYSA-N Dihydrogen disulfide Chemical compound SS BWGNESOTFCXPMA-UHFFFAOYSA-N 0.000 description 1
- 229910000575 Ir alloy Inorganic materials 0.000 description 1
- 229910018104 Ni-P Inorganic materials 0.000 description 1
- 229910018536 Ni—P Inorganic materials 0.000 description 1
- 101150003085 Pdcl gene Proteins 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 1
- QCEUXSAXTBNJGO-UHFFFAOYSA-N [Ag].[Sn] Chemical compound [Ag].[Sn] QCEUXSAXTBNJGO-UHFFFAOYSA-N 0.000 description 1
- JMGVPAUIBBRNCO-UHFFFAOYSA-N [Ru].[Ag] Chemical compound [Ru].[Ag] JMGVPAUIBBRNCO-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- DOBRDRYODQBAMW-UHFFFAOYSA-N copper(i) cyanide Chemical compound [Cu+].N#[C-] DOBRDRYODQBAMW-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000013527 degreasing agent Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 235000019425 dextrin Nutrition 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- LWUVWAREOOAHDW-UHFFFAOYSA-N lead silver Chemical compound [Ag].[Pb] LWUVWAREOOAHDW-UHFFFAOYSA-N 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- MOFOBJHOKRNACT-UHFFFAOYSA-N nickel silver Chemical compound [Ni].[Ag] MOFOBJHOKRNACT-UHFFFAOYSA-N 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- SWELZOZIOHGSPA-UHFFFAOYSA-N palladium silver Chemical compound [Pd].[Ag] SWELZOZIOHGSPA-UHFFFAOYSA-N 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- ZNNZYHKDIALBAK-UHFFFAOYSA-M potassium thiocyanate Chemical compound [K+].[S-]C#N ZNNZYHKDIALBAK-UHFFFAOYSA-M 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 229910000898 sterling silver Inorganic materials 0.000 description 1
- 239000010934 sterling silver Substances 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Lead Frames For Integrated Circuits (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2008-324716 | 2008-12-19 | ||
JP2008324716 | 2008-12-19 | ||
PCT/JP2009/071064 WO2010071182A1 (ja) | 2008-12-19 | 2009-12-17 | 光半導体装置用リードフレーム及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20110100281A KR20110100281A (ko) | 2011-09-09 |
KR101267718B1 true KR101267718B1 (ko) | 2013-05-24 |
Family
ID=42268851
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020117016384A KR101267718B1 (ko) | 2008-12-19 | 2009-12-17 | 광반도체 장치용 리드 프레임 및 그 제조방법 |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP4763094B2 (ja) |
KR (1) | KR101267718B1 (ja) |
CN (1) | CN102257647B (ja) |
TW (1) | TWI465614B (ja) |
WO (1) | WO2010071182A1 (ja) |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106067511A (zh) | 2010-03-30 | 2016-11-02 | 大日本印刷株式会社 | 带树脂引线框、半导体装置及其制造方法 |
JP5839861B2 (ja) * | 2010-07-09 | 2016-01-06 | 古河電気工業株式会社 | 光半導体装置用リードフレーム、光半導体装置用リードフレームの製造方法、および光半導体装置 |
CN102403437A (zh) * | 2010-09-16 | 2012-04-04 | 日立电线株式会社 | 半导体发光元件搭载用基板以及使用其的半导体发光装置 |
JP5857355B2 (ja) * | 2010-09-16 | 2016-02-10 | Shマテリアル株式会社 | 半導体発光素子搭載用基板、及びそれを用いた半導体発光装置 |
US8933548B2 (en) | 2010-11-02 | 2015-01-13 | Dai Nippon Printing Co., Ltd. | Lead frame for mounting LED elements, lead frame with resin, method for manufacturing semiconductor devices, and lead frame for mounting semiconductor elements |
JP2012107263A (ja) * | 2010-11-15 | 2012-06-07 | Kyowa Densen Kk | メッキ構造及び被覆方法 |
JP5736770B2 (ja) * | 2010-12-27 | 2015-06-17 | 大日本印刷株式会社 | Led用基板とその製造方法および半導体装置 |
JP2012151289A (ja) * | 2011-01-19 | 2012-08-09 | Furukawa Electric Co Ltd:The | 光半導体実装用基板、その製造方法、及び光半導体装置 |
JP5985201B2 (ja) | 2012-02-20 | 2016-09-06 | シャープ株式会社 | 発光装置および照明装置 |
JP5881501B2 (ja) * | 2012-03-29 | 2016-03-09 | 株式会社Neomaxマテリアル | 発光素子用基板および発光モジュール |
CN102709267A (zh) * | 2012-05-23 | 2012-10-03 | 顺德工业(江苏)有限公司 | 半导体中的导线架 |
KR102088267B1 (ko) * | 2012-10-05 | 2020-03-12 | 후루카와 덴키 고교 가부시키가이샤 | 은 반사막, 광반사 부재, 및 광반사 부재의 제조방법 |
JP6085536B2 (ja) * | 2013-08-05 | 2017-02-22 | 株式会社Shカッパープロダクツ | 銅条、めっき付銅条、リードフレーム及びledモジュール |
JP6187201B2 (ja) * | 2013-11-29 | 2017-08-30 | 日亜化学工業株式会社 | 発光装置用反射膜、並びに、それを備えるリードフレーム、配線基板、ワイヤ、及び発光装置 |
CN104022295B (zh) * | 2014-05-07 | 2016-10-19 | 南通大学 | 一种直接甲醇燃料电池PdAg/TiO2纳米管电极的制备方法 |
DE102014111895A1 (de) * | 2014-08-20 | 2016-02-25 | Infineon Technologies Ag | Metallisierte elektrische Komponente |
JP5851000B1 (ja) * | 2014-08-22 | 2016-02-03 | 株式会社神戸製鋼所 | Ledのリードフレーム用銅合金板条 |
JP6398541B2 (ja) * | 2014-09-29 | 2018-10-03 | 日亜化学工業株式会社 | リードフレーム及び発光装置 |
JP6237826B2 (ja) * | 2015-09-30 | 2017-11-29 | 日亜化学工業株式会社 | パッケージ及び発光装置、並びにそれらの製造方法 |
JP6411320B2 (ja) * | 2015-12-17 | 2018-10-24 | シャープ株式会社 | 発光装置および照明装置 |
JP7011142B2 (ja) * | 2016-09-30 | 2022-01-26 | 日亜化学工業株式会社 | 発光装置、発光装置用パッケージ及び発光装置の製造方法 |
JPWO2018198982A1 (ja) * | 2017-04-27 | 2019-06-27 | 京セラ株式会社 | 回路基板およびこれを備える発光装置 |
JP6744020B1 (ja) * | 2019-03-22 | 2020-08-19 | 大口マテリアル株式会社 | リードフレーム |
JP6733941B1 (ja) * | 2019-03-22 | 2020-08-05 | 大口マテリアル株式会社 | 半導体素子搭載用基板 |
JP6741356B1 (ja) * | 2019-03-22 | 2020-08-19 | 大口マテリアル株式会社 | リードフレーム |
JP6736716B1 (ja) * | 2019-03-22 | 2020-08-05 | 大口マテリアル株式会社 | リードフレーム |
JP6733940B1 (ja) * | 2019-03-22 | 2020-08-05 | 大口マテリアル株式会社 | リードフレーム |
JP6736719B1 (ja) * | 2019-03-28 | 2020-08-05 | 大口マテリアル株式会社 | 半導体素子搭載用部品、リードフレーム及び半導体素子搭載用基板 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2006269667A (ja) | 2005-03-23 | 2006-10-05 | Sumitomo Electric Ind Ltd | 光反射膜およびそれを用いた発光ダイオード用パッケージ |
JP2008091818A (ja) | 2006-10-05 | 2008-04-17 | Matsushita Electric Ind Co Ltd | 光半導体装置用リードフレームおよびこれを用いた光半導体装置、並びにこれらの製造方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2004064154A1 (en) * | 2003-01-16 | 2004-07-29 | Matsushita Electric Industrial Co., Ltd. | Lead frame for a semiconductor device |
JP4172770B2 (ja) * | 2003-03-26 | 2008-10-29 | 京セラ株式会社 | 発光素子収納用パッケージおよび発光装置 |
JP4480407B2 (ja) * | 2004-01-29 | 2010-06-16 | 京セラ株式会社 | 発光素子収納用パッケージおよび発光装置 |
JP2006303069A (ja) * | 2005-04-19 | 2006-11-02 | Sumitomo Metal Electronics Devices Inc | 発光素子搭載用パッケージ |
JP5226323B2 (ja) * | 2006-01-19 | 2013-07-03 | 株式会社東芝 | 発光モジュールとそれを用いたバックライトおよび液晶表示装置 |
JP2008192635A (ja) * | 2007-01-31 | 2008-08-21 | Matsushita Electric Ind Co Ltd | 光半導体装置、リードフレームおよび光半導体装置の製造方法 |
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2009
- 2009-12-17 JP JP2010543004A patent/JP4763094B2/ja not_active Expired - Fee Related
- 2009-12-17 WO PCT/JP2009/071064 patent/WO2010071182A1/ja active Application Filing
- 2009-12-17 CN CN200980151171.1A patent/CN102257647B/zh not_active Expired - Fee Related
- 2009-12-17 KR KR1020117016384A patent/KR101267718B1/ko active IP Right Grant
- 2009-12-18 TW TW098143567A patent/TWI465614B/zh not_active IP Right Cessation
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2006269667A (ja) | 2005-03-23 | 2006-10-05 | Sumitomo Electric Ind Ltd | 光反射膜およびそれを用いた発光ダイオード用パッケージ |
JP2008091818A (ja) | 2006-10-05 | 2008-04-17 | Matsushita Electric Ind Co Ltd | 光半導体装置用リードフレームおよびこれを用いた光半導体装置、並びにこれらの製造方法 |
Also Published As
Publication number | Publication date |
---|---|
WO2010071182A1 (ja) | 2010-06-24 |
JPWO2010071182A1 (ja) | 2012-05-31 |
TWI465614B (zh) | 2014-12-21 |
CN102257647A (zh) | 2011-11-23 |
JP4763094B2 (ja) | 2011-08-31 |
CN102257647B (zh) | 2014-07-23 |
TW201030191A (en) | 2010-08-16 |
KR20110100281A (ko) | 2011-09-09 |
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