KR100926867B1 - 박막형성장치 및 박막형성방법 - Google Patents
박막형성장치 및 박막형성방법 Download PDFInfo
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- KR100926867B1 KR100926867B1 KR1020057023033A KR20057023033A KR100926867B1 KR 100926867 B1 KR100926867 B1 KR 100926867B1 KR 1020057023033 A KR1020057023033 A KR 1020057023033A KR 20057023033 A KR20057023033 A KR 20057023033A KR 100926867 B1 KR100926867 B1 KR 100926867B1
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- Prior art keywords
- plasma
- gas
- process zone
- thin film
- film forming
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- 239000010409 thin film Substances 0.000 title claims abstract description 90
- 238000000034 method Methods 0.000 title claims description 63
- 239000007789 gas Substances 0.000 claims abstract description 103
- 239000011261 inert gas Substances 0.000 claims abstract description 25
- 239000012212 insulator Substances 0.000 claims abstract description 25
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 8
- 238000006243 chemical reaction Methods 0.000 claims description 68
- 239000010408 film Substances 0.000 claims description 47
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 36
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 36
- 230000008569 process Effects 0.000 claims description 36
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 33
- 238000004544 sputter deposition Methods 0.000 claims description 32
- 238000009832 plasma treatment Methods 0.000 claims description 26
- 229910052786 argon Inorganic materials 0.000 claims description 18
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 16
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 6
- 238000012545 processing Methods 0.000 claims description 6
- 239000001307 helium Substances 0.000 claims description 5
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- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 5
- 239000007769 metal material Substances 0.000 claims description 5
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- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 claims description 5
- 229910052724 xenon Inorganic materials 0.000 claims description 5
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims description 5
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- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 claims description 4
- 238000005979 thermal decomposition reaction Methods 0.000 claims description 3
- 238000005507 spraying Methods 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims 1
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- 239000000463 material Substances 0.000 description 14
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- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 8
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
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- 239000010955 niobium Substances 0.000 description 3
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- 239000010935 stainless steel Substances 0.000 description 3
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- 239000010936 titanium Substances 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
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- 229910018487 Ni—Cr Inorganic materials 0.000 description 2
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- GEIAQOFPUVMAGM-UHFFFAOYSA-N ZrO Inorganic materials [Zr]=O GEIAQOFPUVMAGM-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
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- 239000003990 capacitor Substances 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
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- 239000012141 concentrate Substances 0.000 description 2
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- 238000002474 experimental method Methods 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 2
- 238000000504 luminescence detection Methods 0.000 description 2
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- 230000001590 oxidative effect Effects 0.000 description 2
- 125000004430 oxygen atom Chemical group O* 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- ZVTQDOIPKNCMAR-UHFFFAOYSA-N sulfanylidene(sulfanylideneboranylsulfanyl)borane Chemical compound S=BSB=S ZVTQDOIPKNCMAR-UHFFFAOYSA-N 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 238000011282 treatment Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- BSYNRYMUTXBXSQ-UHFFFAOYSA-N Aspirin Chemical compound CC(=O)OC1=CC=CC=C1C(O)=O BSYNRYMUTXBXSQ-UHFFFAOYSA-N 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
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- 229910045601 alloy Inorganic materials 0.000 description 1
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- WPPDFTBPZNZZRP-UHFFFAOYSA-N aluminum copper Chemical compound [Al].[Cu] WPPDFTBPZNZZRP-UHFFFAOYSA-N 0.000 description 1
- 238000001636 atomic emission spectroscopy Methods 0.000 description 1
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- 150000001723 carbon free-radicals Chemical class 0.000 description 1
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- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 238000004993 emission spectroscopy Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
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- 229930195733 hydrocarbon Natural products 0.000 description 1
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- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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Abstract
Description
또한 상기 절연체가 증착법, 용사법, 및 열분해법 중 어느 하나의 방법에 의해 상기 진공용기의 벽면에 피복되는 것이 바람직하다.
Claims (16)
- 스퍼터를 행하기 위한 성막프로세스존과, 상기 성막프로세스존에서 벗어난 위치에 형성되어 플라즈마처리를 행하기 위하여 반응프로세스존이 내부에 형성되어 내부를 진공으로 유지하는 진공용기와;상기 진공용기 내의 상기 반응프로세스존내에 반응성 가스를 도입하는 가스도입수단과;상기 진공용기내의 상기 반응프로세스존에 상기 반응성가스의 플라즈마를 발생하기 위한 플라즈마발생수단을 구비하는 박막형성장치에 있어서,상기 진공용기 내의 상기 반응프로세스존과 마주보는 벽면에 절연체가 피복되고,상기 가스도입수단은 상기 플라즈마 발생수단에 의해 플라즈마가 발생하는 영역으로 반응성 가스와 불활성 가스의 혼합가스를 도입하는 수단이고,상기 플라즈마발생수단은 표면이 전기저항이 낮은 금속재료로 형성된 안테나를 구비한 것을 특징으로 하는 박막형성장치.
- 제 1항에 있어서,상기 불활성 가스가 아르곤가스, 헬륨가스, 네온가스, 클립톤가스, 키세논가스로로 이뤄지는 군으로부터 선택되는 가스인 것을 특징으로 하는 박막형성장치.
- 삭제
- 제 1항에 있어서,상기 플라즈마 발생수단에 의해 플라즈마가 발생하는 영역에 면하여 상기 진공용기의 내벽면에서 세워 설치하는 플라즈마 수속벽(收束壁)을 구비하고,상기 절연체가 피복되는 상기 진공용기 내의 벽면은 상기 플라즈마 수속벽의 벽면인 것을 특징으로 하는 박막형성장치.
- 제1항에 있어서,상기 절연체가 열분해 질화붕소, 산화 알루미늄 및 산화규소로부터 이뤄지는 군으로부터 선택되는 절연체인 것을 특징으로 하는 박막형성장치.
- 제1항에 있어서,상기 절연체가 증착법, 용사법 및 열분해법 중 어느 하나의 방법에 의해 상기 진공용기내의 벽면에 피복되는 것을 특징으로 하는 박막형성장치.
- 스퍼터을 행하기 위한 성막프로세스존과, 상기 성막프로세스존에 벗어난 위치에 형성되어 플라즈마처리를 행하기 위한 반응프로세스존이 내부에 형성되는 진공용기내에서, 상기 진공용기 내의 상기 반응프로세스존과 마주하는 벽면에 절연체를 피복한 박막형성장치를 이용하여 표면이 전기저항이 낮은 금속재료에 형성되는 안테나를 구비한 플라즈마발생수단에 의해 플라즈마를 발생시켜, 박막에 대하여 플라즈마 처리를 실시하는 박막형성방법에 있어서,상기 반응프로세스존 내의 상기 플라즈마를 발생시키는 영역에 반응성 가스와 불활성 가스의 혼합가스를 도입하는 공정과;상기 반응프로세스존 내에서 상기 반응성 가스의 플라즈마를 발생시키는 공정을 구비하는 것을 특징으로 하는 박막형성방법.
- 제 7항에 있어서,상기 절연체가 열분해 질화붕소, 산화알루미늄 및 산화규소로부터 이뤄지는 군으로부터 선택되는 것을 특징으로 하는 박막형성방법.
- 제 7항 또는 제 8항에 있어서,상기 불활성가스가 아르곤가스, 헬륨가스, 네온가스, 크립톤가스, 키세논가스로 이뤄지는 군으로부터 선택되는 것을 특징으로 하는 박막형성방법.
- 삭제
- 삭제
- 삭제
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- 삭제
- 삭제
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PCT/JP2004/007483 WO2004108980A1 (ja) | 2003-06-02 | 2004-05-31 | 薄膜形成装置及び薄膜形成方法 |
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EP1637624B1 (en) * | 2003-06-02 | 2012-05-30 | Shincron Co., Ltd. | Thin film forming apparatus |
-
2003
- 2003-06-02 EP EP03733231A patent/EP1637624B1/en not_active Expired - Lifetime
- 2003-06-02 CN CNB038265753A patent/CN100513632C/zh not_active Expired - Lifetime
- 2003-06-02 WO PCT/JP2003/006951 patent/WO2004108979A1/ja active Application Filing
- 2003-06-02 JP JP2005500523A patent/JP3839038B2/ja not_active Expired - Fee Related
- 2003-06-02 US US10/559,326 patent/US20060124455A1/en not_active Abandoned
-
2004
- 2004-05-27 TW TW093115057A patent/TWI318242B/zh active
- 2004-05-31 CN CN2004800144036A patent/CN1795287B/zh not_active Expired - Fee Related
- 2004-05-31 US US10/558,777 patent/US20060266291A1/en not_active Abandoned
- 2004-05-31 EP EP04745448.3A patent/EP1640474B1/en not_active Expired - Lifetime
- 2004-05-31 WO PCT/JP2004/007483 patent/WO2004108980A1/ja active Application Filing
- 2004-05-31 KR KR1020057023033A patent/KR100926867B1/ko active IP Right Grant
- 2004-05-31 JP JP2005506749A patent/JP3874787B2/ja not_active Expired - Lifetime
-
2006
- 2006-07-25 HK HK06108238.9A patent/HK1088046A1/xx not_active IP Right Cessation
- 2006-08-01 HK HK06108542.0A patent/HK1088365A1/xx not_active IP Right Cessation
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH1126191A (ja) | 1997-07-04 | 1999-01-29 | Tokyo Electron Ltd | プラズマ処理装置 |
JP2001234338A (ja) * | 2000-02-25 | 2001-08-31 | Shincron:Kk | 金属化合物薄膜の形成方法およびその形成装置 |
JP2001353440A (ja) * | 2000-06-14 | 2001-12-25 | Matsushita Electric Ind Co Ltd | プラズマ処理方法及び装置 |
Also Published As
Publication number | Publication date |
---|---|
HK1088365A1 (en) | 2006-11-03 |
US20060124455A1 (en) | 2006-06-15 |
TWI318242B (en) | 2009-12-11 |
EP1637624B1 (en) | 2012-05-30 |
JP3874787B2 (ja) | 2007-01-31 |
EP1637624A4 (en) | 2007-12-26 |
CN1788104A (zh) | 2006-06-14 |
HK1088046A1 (en) | 2006-10-27 |
EP1640474B1 (en) | 2013-08-28 |
JPWO2004108979A1 (ja) | 2006-07-20 |
KR20060023982A (ko) | 2006-03-15 |
EP1637624A1 (en) | 2006-03-22 |
CN100513632C (zh) | 2009-07-15 |
CN1795287B (zh) | 2012-07-04 |
WO2004108979A1 (ja) | 2004-12-16 |
EP1640474A4 (en) | 2011-06-22 |
EP1640474A1 (en) | 2006-03-29 |
JPWO2004108980A1 (ja) | 2006-07-20 |
US20060266291A1 (en) | 2006-11-30 |
WO2004108980A1 (ja) | 2004-12-16 |
CN1795287A (zh) | 2006-06-28 |
JP3839038B2 (ja) | 2006-11-01 |
TW200510565A (en) | 2005-03-16 |
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