KR100868599B1 - 유기 전계 발광 소자 및 그 제조 방법 - Google Patents
유기 전계 발광 소자 및 그 제조 방법 Download PDFInfo
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- KR100868599B1 KR100868599B1 KR1020037005946A KR20037005946A KR100868599B1 KR 100868599 B1 KR100868599 B1 KR 100868599B1 KR 1020037005946 A KR1020037005946 A KR 1020037005946A KR 20037005946 A KR20037005946 A KR 20037005946A KR 100868599 B1 KR100868599 B1 KR 100868599B1
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- anode
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- light emitting
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- silver
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- 238000005401 electroluminescence Methods 0.000 title description 2
- 239000010410 layer Substances 0.000 claims abstract description 129
- 239000004332 silver Substances 0.000 claims abstract description 66
- 229910052709 silver Inorganic materials 0.000 claims abstract description 65
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 62
- 238000002347 injection Methods 0.000 claims abstract description 62
- 239000007924 injection Substances 0.000 claims abstract description 62
- 239000010409 thin film Substances 0.000 claims abstract description 51
- 239000000956 alloy Substances 0.000 claims abstract description 35
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 35
- 239000012044 organic layer Substances 0.000 claims abstract description 27
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 239000010949 copper Substances 0.000 claims abstract description 9
- 229910052763 palladium Inorganic materials 0.000 claims abstract description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052802 copper Inorganic materials 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims description 23
- 239000000463 material Substances 0.000 claims description 17
- 230000008569 process Effects 0.000 claims description 10
- 239000011261 inert gas Substances 0.000 claims description 8
- 239000000284 extract Substances 0.000 claims description 5
- 230000003287 optical effect Effects 0.000 claims description 4
- 238000001228 spectrum Methods 0.000 claims description 4
- 230000010363 phase shift Effects 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 abstract description 10
- 239000002184 metal Substances 0.000 abstract description 10
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 abstract description 6
- 230000001965 increasing effect Effects 0.000 abstract description 6
- 229910000423 chromium oxide Inorganic materials 0.000 abstract description 5
- 238000000605 extraction Methods 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 14
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 8
- 239000011651 chromium Substances 0.000 description 8
- 239000001301 oxygen Substances 0.000 description 8
- 229910052760 oxygen Inorganic materials 0.000 description 8
- 238000004544 sputter deposition Methods 0.000 description 8
- 230000004048 modification Effects 0.000 description 7
- 238000012986 modification Methods 0.000 description 7
- 238000000059 patterning Methods 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 230000005525 hole transport Effects 0.000 description 6
- 238000001459 lithography Methods 0.000 description 6
- 239000011777 magnesium Substances 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 5
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 5
- 229910052804 chromium Inorganic materials 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 229910052749 magnesium Inorganic materials 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 4
- 230000004075 alteration Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 238000002834 transmittance Methods 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 229910001316 Ag alloy Inorganic materials 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 230000035699 permeability Effects 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 229910052717 sulfur Inorganic materials 0.000 description 3
- 239000011593 sulfur Substances 0.000 description 3
- 229910000861 Mg alloy Inorganic materials 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- -1 8-quinolinol aluminum Chemical compound 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- HFACYLZERDEVSX-UHFFFAOYSA-N benzidine Chemical compound C1=CC(N)=CC=C1C1=CC=C(N)C=C1 HFACYLZERDEVSX-UHFFFAOYSA-N 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- SJCKRGFTWFGHGZ-UHFFFAOYSA-N magnesium silver Chemical compound [Mg].[Ag] SJCKRGFTWFGHGZ-UHFFFAOYSA-N 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical compound C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
- H10K50/818—Reflective anodes, e.g. ITO combined with thick metallic layers
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/26—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C5/00—Alloys based on noble metals
- C22C5/06—Alloys based on silver
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- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C5/00—Alloys based on noble metals
- C22C5/06—Alloys based on silver
- C22C5/08—Alloys based on silver with copper as the next major constituent
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Abstract
Description
Claims (8)
- 양극과 음극 사이에 발광층을 포함하는 1층 이상의 유기층을 구비하며, 상기 발광층에서 발생한 광을 상기 음극의 측으로부터 추출하는 유기 전계 발광 소자에 있어서,상기 양극은, 은(Ag)을 50 질량% 이상 포함하는 합금으로 구성된 것을 특징으로 하는 유기 전계 발광 소자.
- 제1항에 있어서,상기 양극은, 은과, 팔라듐(Pd)과, 구리(Cu)를 포함하는 합금으로 구성된 것을 특징으로 하는 유기 전계 발광 소자.
- 삭제
- 제1항에 있어서,상기 양극과 상기 유기 전계 발광층 사이에, 상기 양극보다도 일 함수가 높은 재료로 이루어지는 정공 주입용 박막층을 더 구비한 것을 특징으로 하는 유기 전계 발광 소자.
- 제1항에 있어서,상기 음극은, 상기 발광층에서 발생한 광에 대하여 반투과성의 반투과성 전극을 갖고,이 반투과성 전극과 상기 양극은, 상기 발광층에서 발생한 광을 공진시키는 공진기의 공진부를 구성하고 있는 것을 특징으로 하는 유기 전계 발광 소자.
- 양극과 음극 사이에 발광층을 포함하는 1층 이상의 유기층을 구비하여, 상기 발광층에서 발생한 광을 상기 음극의 측으로부터 추출하는 유기 전계 발광 소자의 제조 방법에 있어서,기판의 위에, 은(Ag) 또는 은을 포함하는 합금으로 이루어지는 양극을 성막하는 공정과,이 양극의 위에, 양극보다도 일 함수가 높은 재료로 이루어지는 정공 주입용 박막층을, 불활성 가스 분위기 내에서 성막하는 공정과,이 정공 주입용 박막층의 위에, 발광층을 포함하는 1층 이상의 유기층을 형성하는 공정과,이 유기층의 위에, 음극을 형성하는 공정을 포함하는 것을 특징으로 하는 유기 전계 발광 소자의 제조 방법.
- 양극과 음극 사이에 발광층을 포함하는 1층 이상의 유기층을 구비하여, 상기 발광층에서 발생한 광을 상기 음극의 측으로부터 추출하는 유기 전계 발광 소자의 제조 방법에 있어서,기판의 위에, 은(Ag) 또는 은을 포함하는 합금으로 이루어지는 양극을 성막하는 공정과,이 양극의 위에, 양극보다도 일 함수가 높은 재료로 이루어지는 정공 주입용 박막층을, 형성 예정 영역에 대응하여 개구를 갖는 에리어 마스크를 이용하여 성막하는 공정과,이 정공 주입용 박막층의 위에, 발광층을 포함하는 1층 이상의 유기층을 형성하는 공정과,이 유기층의 위에, 음극을 형성하는 공정을 포함하는 것을 특징으로 하는 유기 전계 발광 소자의 제조 방법.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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JPJP-P-2001-00264410 | 2001-08-31 | ||
JP2001264410A JP3804858B2 (ja) | 2001-08-31 | 2001-08-31 | 有機電界発光素子およびその製造方法 |
PCT/JP2002/006354 WO2003022011A1 (fr) | 2001-08-31 | 2002-06-25 | Dispositif electroluminescent organique et son procede de fabrication |
Publications (2)
Publication Number | Publication Date |
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KR20040030445A KR20040030445A (ko) | 2004-04-09 |
KR100868599B1 true KR100868599B1 (ko) | 2008-11-13 |
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KR1020037005946A KR100868599B1 (ko) | 2001-08-31 | 2002-06-25 | 유기 전계 발광 소자 및 그 제조 방법 |
Country Status (7)
Country | Link |
---|---|
US (6) | US7285905B2 (ko) |
EP (1) | EP1422977A4 (ko) |
JP (1) | JP3804858B2 (ko) |
KR (1) | KR100868599B1 (ko) |
CN (1) | CN100416885C (ko) |
TW (1) | TW557638B (ko) |
WO (1) | WO2003022011A1 (ko) |
Families Citing this family (49)
Publication number | Priority date | Publication date | Assignee | Title |
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JP3804858B2 (ja) | 2001-08-31 | 2006-08-02 | ソニー株式会社 | 有機電界発光素子およびその製造方法 |
JP2003109775A (ja) * | 2001-09-28 | 2003-04-11 | Sony Corp | 有機電界発光素子 |
US7488986B2 (en) * | 2001-10-26 | 2009-02-10 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
US20040140757A1 (en) * | 2003-01-17 | 2004-07-22 | Eastman Kodak Company | Microcavity OLED devices |
US20040149984A1 (en) * | 2003-01-31 | 2004-08-05 | Eastman Kodak Company | Color OLED display with improved emission |
JP4362696B2 (ja) | 2003-03-26 | 2009-11-11 | ソニー株式会社 | 発光素子およびその製造方法、ならびに表示装置 |
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EP1422977A4 (en) | 2009-06-17 |
US20160233454A1 (en) | 2016-08-11 |
JP3804858B2 (ja) | 2006-08-02 |
US20150137104A1 (en) | 2015-05-21 |
TW557638B (en) | 2003-10-11 |
US20040021414A1 (en) | 2004-02-05 |
US8937428B2 (en) | 2015-01-20 |
KR20040030445A (ko) | 2004-04-09 |
US10522781B2 (en) | 2019-12-31 |
US9722201B2 (en) | 2017-08-01 |
CN100416885C (zh) | 2008-09-03 |
WO2003022011A1 (fr) | 2003-03-13 |
US10020460B2 (en) | 2018-07-10 |
US7285905B2 (en) | 2007-10-23 |
US9240564B2 (en) | 2016-01-19 |
US20080067927A1 (en) | 2008-03-20 |
EP1422977A1 (en) | 2004-05-26 |
JP2003077681A (ja) | 2003-03-14 |
US20160268539A1 (en) | 2016-09-15 |
US20180294430A1 (en) | 2018-10-11 |
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