KR100527193B1 - 다층구조 화소전극을 갖는 유기전계발광소자 및 그의제조방법 - Google Patents
다층구조 화소전극을 갖는 유기전계발광소자 및 그의제조방법 Download PDFInfo
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- KR100527193B1 KR100527193B1 KR10-2003-0035760A KR20030035760A KR100527193B1 KR 100527193 B1 KR100527193 B1 KR 100527193B1 KR 20030035760 A KR20030035760 A KR 20030035760A KR 100527193 B1 KR100527193 B1 KR 100527193B1
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- Prior art keywords
- pixel electrode
- light emitting
- organic light
- substrate
- pixel
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 238000005401 electroluminescence Methods 0.000 title description 4
- 239000000758 substrate Substances 0.000 claims abstract description 27
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 18
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 18
- 239000011651 chromium Substances 0.000 claims description 12
- 239000010931 gold Substances 0.000 claims description 12
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 11
- UBSJOWMHLJZVDJ-UHFFFAOYSA-N aluminum neodymium Chemical group [Al].[Nd] UBSJOWMHLJZVDJ-UHFFFAOYSA-N 0.000 claims description 10
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052804 chromium Inorganic materials 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 229910052741 iridium Inorganic materials 0.000 claims description 6
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- 229910052697 platinum Inorganic materials 0.000 claims description 6
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 6
- 229910001316 Ag alloy Inorganic materials 0.000 claims description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 229910000838 Al alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 239000000243 solution Substances 0.000 abstract description 12
- 239000008151 electrolyte solution Substances 0.000 abstract description 7
- 238000001039 wet etching Methods 0.000 abstract description 6
- 239000010410 layer Substances 0.000 description 25
- 239000010408 film Substances 0.000 description 15
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 238000005530 etching Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 239000012044 organic layer Substances 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000002207 thermal evaporation Methods 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/26—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/26—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
- H05B33/28—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode of translucent electrodes
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
- H10K50/813—Anodes characterised by their shape
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
- H10K50/818—Reflective anodes, e.g. ITO combined with thick metallic layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
- H10K50/828—Transparent cathodes, e.g. comprising thin metal layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8051—Anodes
- H10K59/80515—Anodes characterised by their shape
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8051—Anodes
- H10K59/80518—Reflective anodes, e.g. ITO combined with thick metallic layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8052—Cathodes
- H10K59/80524—Transparent cathodes, e.g. comprising thin metal layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/302—Details of OLEDs of OLED structures
- H10K2102/3023—Direction of light emission
- H10K2102/3026—Top emission
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8051—Anodes
- H10K59/80517—Multilayers, e.g. transparent multilayers
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- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Description
Claims (12)
- 기판;상기 기판 상의 소정영역에 배치된 제1 화소전극;및상기 제1 화소전극의 상부에 위치하고, 상기 제1 화소전극을 완전히 덮는 제2 화소전극을 포함하는 유기전계발광소자.
- 제 1항에 있어서,상기 제1 화소전극과 상기 기판 사이에 제3 화소전극을 더 포함하되,상기 제1 화소전극은 상기 제3 화소전극을 완전히 덮는 것을 특징으로 하는 유기전계발광소자.
- 제 1항에 있어서,상기 제1 화소전극은그 측면이 상부를 향해 테이퍼(taper)진 형상인 것을 특징으로 하는 유기전계발광소자.
- 제 1항 또는 제 2항에 있어서,상기 제1 화소전극은알루미늄(Al), 알루미늄 합금, 은(Ag), 은 합금 및 이들의 합금으로 이루어진 군으로부터 선택된 하나 이상으로 이루어진 것을 특징으로 하는 유기전계발광소자.
- 제 1항 또는 제 2항에 있어서,상기 제2 화소전극은ITO(Indium Tin Oxide), IZO(Indium Zinc Oxide), 니켈(Ni), 백금(Pt), 금(Au), 이리듐(Ir), 크롬(Cr) 및 그 산화물로 이루어진 군으로부터 선택된 하나 이상으로 이루어진 것을 특징으로 하는 유기전계발광소자.
- 제 2항에 있어서,상기 제3 화소전극은ITO(Indium Tin Oxide), IZO(Indium Zinc Oxide), 니켈(Ni), 백금(Pt), 금(Au), 이리듐(Ir), 크롬(Cr) 및 그 산화물로 이루어진 군으로부터 선택된 하나 이상으로 이루어진 것을 특징으로 하는 유기전계발광소자.
- 제 1항에 있어서,상기 제1 화소전극은 알루미늄-네오디늄(AlNd)이고,상기 제2 화소전극은 ITO(Indium Tin Oxide)인 것을 특징으로 하는 유기전계발광소자.
- 제 2항에 있어서,상기 제1 화소전극은 알루미늄-네오디늄(AlNd)이고,상기 제2 화소전극과 상기 제3 화소전극은 ITO(Indium Tin Oxide)인 것을 특징으로 하는 유기전계발광소자.
- 기판 상의 소정영역에 제1 화소전극을 형성하고,상기 제1 화소전극의 상부에 상기 제1 화소전극을 완전히 덮는 제2 화소전극을 형성하는 것을 포함하는 유기전계발광소자 제조방법.
- 제 9항에 있어서,상기 제1 화소전극을 형성하기 전에,상기 제1 화소전극과 상기 기판 사이에 제3 화소전극을 형성하는 것을 더 포함하고;상기 제1 화소전극은상기 제3 화소전극을 완전히 덮도록 형성하는 것을 특징으로 하는 유기전계발광소자 제조방법.
- 제 9항에 있어서,상기 제1 화소전극은그 측면이 상부를 향해 테이퍼(taper)진 형상으로 형성되는 것을 특징으로 하는 유기전계발광소자 제조방법.
- 제 9항에 있어서,상기 제1 화소전극과 상기 제2 화소전극은동일 포토마스크를 이용하여 형성하는 것을 특징으로 하는 유기전계발광소자 제조방법.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2003-0035760A KR100527193B1 (ko) | 2003-06-03 | 2003-06-03 | 다층구조 화소전극을 갖는 유기전계발광소자 및 그의제조방법 |
US10/805,230 US7298083B2 (en) | 2003-06-03 | 2004-03-22 | Organic electroluminescence device employing multi-layered pixel electrode and method of fabricating the same |
CNB2004100465560A CN100442569C (zh) | 2003-06-03 | 2004-06-02 | 采用多层型像素电极的有机电致发光器件及其制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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KR10-2003-0035760A KR100527193B1 (ko) | 2003-06-03 | 2003-06-03 | 다층구조 화소전극을 갖는 유기전계발광소자 및 그의제조방법 |
Publications (2)
Publication Number | Publication Date |
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KR20040104226A KR20040104226A (ko) | 2004-12-10 |
KR100527193B1 true KR100527193B1 (ko) | 2005-11-08 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR10-2003-0035760A KR100527193B1 (ko) | 2003-06-03 | 2003-06-03 | 다층구조 화소전극을 갖는 유기전계발광소자 및 그의제조방법 |
Country Status (3)
Country | Link |
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US (1) | US7298083B2 (ko) |
KR (1) | KR100527193B1 (ko) |
CN (1) | CN100442569C (ko) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
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US8278818B2 (en) * | 2004-06-04 | 2012-10-02 | Samsung Mobile Display Co., Ltd. | Electroluminescent display device and method of fabricating the same |
US7306970B2 (en) * | 2004-08-30 | 2007-12-11 | International Business Machines Corporation | Method and apparatus for manufacturing an optoelectronic device |
JP4254668B2 (ja) * | 2004-09-07 | 2009-04-15 | ソニー株式会社 | 有機電界発光素子および表示装置 |
KR100685424B1 (ko) * | 2004-11-24 | 2007-02-22 | 삼성에스디아이 주식회사 | 유기전계 발광표시장치 및 그 제조방법 |
KR100546632B1 (ko) * | 2004-12-23 | 2006-01-26 | (주)플라웍스 | 이온빔 스퍼터링 증착 및 디씨 스퍼터링 증착을 이용한투명 전극용 아이티오 복합층, 동 증착 방법 및 동 증착장치 |
US20060214567A1 (en) * | 2005-03-25 | 2006-09-28 | Yongchun Luo | Organic electroluminescent element |
JP5006108B2 (ja) * | 2007-06-01 | 2012-08-22 | 株式会社ジャパンディスプレイイースト | 表示装置 |
KR100982412B1 (ko) * | 2008-05-29 | 2010-09-15 | (주)에이디에스 | 전기광학소자 및 이의 제작 방법 |
KR101365909B1 (ko) * | 2008-09-05 | 2014-02-21 | 금오공과대학교 산학협력단 | 유기전계발광표시장치와 이의 제조방법 |
JP2010192413A (ja) * | 2009-01-22 | 2010-09-02 | Sony Corp | 有機電界発光素子および表示装置 |
JP5437895B2 (ja) * | 2010-04-20 | 2014-03-12 | 株式会社ジャパンディスプレイ | 表示装置及びその製造方法 |
CN102169852B (zh) * | 2011-02-24 | 2013-08-07 | 华映视讯(吴江)有限公司 | 像素结构的制作方法以及像素结构 |
KR101784994B1 (ko) | 2011-03-31 | 2017-10-13 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
KR102192592B1 (ko) | 2013-07-22 | 2020-12-18 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
CN103500804B (zh) * | 2013-08-28 | 2016-03-16 | 京东方科技集团股份有限公司 | 一种薄膜及其制备方法、发光显示器件 |
CN104701460B (zh) * | 2013-12-09 | 2017-03-29 | 昆山工研院新型平板显示技术中心有限公司 | 一种反射电极及其制备方法和应用 |
JP6514999B2 (ja) * | 2015-09-15 | 2019-05-15 | 株式会社ジャパンディスプレイ | 表示装置 |
CN107086274A (zh) * | 2017-05-15 | 2017-08-22 | 京东方科技集团股份有限公司 | 有机发光二极管及其制备方法 |
CN110571357B (zh) * | 2018-06-05 | 2022-03-04 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件及其制造方法 |
CN110165080B (zh) * | 2019-05-30 | 2021-12-03 | 京东方科技集团股份有限公司 | 发光器件、显示面板及其制备方法 |
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JPH10289784A (ja) * | 1997-04-14 | 1998-10-27 | Mitsubishi Chem Corp | 有機電界発光素子 |
WO2001006576A1 (en) * | 1999-07-19 | 2001-01-25 | Uniax Corporation | Long-lifetime polymer light-emitting devices with improved luminous efficiency and radiance |
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JP2002202737A (ja) | 2000-12-28 | 2002-07-19 | Nec Corp | 発光素子の製造方法、発光素子 |
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JP3804858B2 (ja) * | 2001-08-31 | 2006-08-02 | ソニー株式会社 | 有機電界発光素子およびその製造方法 |
KR100464864B1 (ko) * | 2002-04-25 | 2005-01-06 | 엘지.필립스 엘시디 주식회사 | 유기전계발광 소자 및 그의 제조방법 |
JP2003317971A (ja) * | 2002-04-26 | 2003-11-07 | Semiconductor Energy Lab Co Ltd | 発光装置およびその作製方法 |
-
2003
- 2003-06-03 KR KR10-2003-0035760A patent/KR100527193B1/ko active IP Right Grant
-
2004
- 2004-03-22 US US10/805,230 patent/US7298083B2/en active Active
- 2004-06-02 CN CNB2004100465560A patent/CN100442569C/zh not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US7298083B2 (en) | 2007-11-20 |
CN100442569C (zh) | 2008-12-10 |
CN1575078A (zh) | 2005-02-02 |
US20040245923A1 (en) | 2004-12-09 |
KR20040104226A (ko) | 2004-12-10 |
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