KR100774898B1 - 반도체 장치의 제조 방법 - Google Patents
반도체 장치의 제조 방법 Download PDFInfo
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- KR100774898B1 KR100774898B1 KR1020060011084A KR20060011084A KR100774898B1 KR 100774898 B1 KR100774898 B1 KR 100774898B1 KR 1020060011084 A KR1020060011084 A KR 1020060011084A KR 20060011084 A KR20060011084 A KR 20060011084A KR 100774898 B1 KR100774898 B1 KR 100774898B1
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 55
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 35
- 239000003990 capacitor Substances 0.000 claims abstract description 97
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 63
- 239000001301 oxygen Substances 0.000 claims abstract description 62
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 61
- 229910052751 metal Inorganic materials 0.000 claims abstract description 54
- 239000002184 metal Substances 0.000 claims abstract description 54
- 239000000758 substrate Substances 0.000 claims abstract description 47
- 230000004888 barrier function Effects 0.000 claims abstract description 38
- 239000000463 material Substances 0.000 claims abstract description 22
- 239000012535 impurity Substances 0.000 claims abstract description 20
- 238000009792 diffusion process Methods 0.000 claims abstract description 17
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims abstract description 15
- 238000010030 laminating Methods 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 44
- 238000000137 annealing Methods 0.000 claims description 26
- 230000001681 protective effect Effects 0.000 claims description 21
- 238000005498 polishing Methods 0.000 claims description 16
- 238000005530 etching Methods 0.000 claims description 12
- 239000010936 titanium Substances 0.000 claims description 12
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 10
- 229910052719 titanium Inorganic materials 0.000 claims description 10
- 239000002344 surface layer Substances 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 2
- 238000005121 nitriding Methods 0.000 claims description 2
- 238000002360 preparation method Methods 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 32
- 229910052710 silicon Inorganic materials 0.000 abstract description 32
- 239000010703 silicon Substances 0.000 abstract description 32
- 210000002381 plasma Anatomy 0.000 abstract 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 23
- 239000010410 layer Substances 0.000 description 22
- 238000004544 sputter deposition Methods 0.000 description 22
- 239000007789 gas Substances 0.000 description 18
- 229910052741 iridium Inorganic materials 0.000 description 18
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 18
- 239000013078 crystal Substances 0.000 description 11
- 230000008569 process Effects 0.000 description 11
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 11
- 229910052721 tungsten Inorganic materials 0.000 description 11
- 239000010937 tungsten Substances 0.000 description 11
- 239000003292 glue Substances 0.000 description 10
- 238000011084 recovery Methods 0.000 description 10
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 9
- 230000015654 memory Effects 0.000 description 8
- 238000009832 plasma treatment Methods 0.000 description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 8
- 230000009471 action Effects 0.000 description 6
- UQZIWOQVLUASCR-UHFFFAOYSA-N alumane;titanium Chemical compound [AlH3].[Ti] UQZIWOQVLUASCR-UHFFFAOYSA-N 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- HTXDPTMKBJXEOW-UHFFFAOYSA-N dioxoiridium Chemical compound O=[Ir]=O HTXDPTMKBJXEOW-UHFFFAOYSA-N 0.000 description 6
- 238000002955 isolation Methods 0.000 description 6
- 230000010287 polarization Effects 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 230000006870 function Effects 0.000 description 5
- 229910000457 iridium oxide Inorganic materials 0.000 description 5
- 238000002844 melting Methods 0.000 description 5
- 230000008018 melting Effects 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 4
- 229910052707 ruthenium Inorganic materials 0.000 description 4
- 230000003064 anti-oxidating effect Effects 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 238000002425 crystallisation Methods 0.000 description 3
- 230000008025 crystallization Effects 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- 229910021332 silicide Inorganic materials 0.000 description 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 3
- 230000002269 spontaneous effect Effects 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910004121 SrRuO Inorganic materials 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 229910052762 osmium Inorganic materials 0.000 description 2
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229910052702 rhenium Inorganic materials 0.000 description 2
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 2
- 229910052703 rhodium Inorganic materials 0.000 description 2
- 239000010948 rhodium Substances 0.000 description 2
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000004627 transmission electron microscopy Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- RZEADQZDBXGRSM-UHFFFAOYSA-N bismuth lanthanum Chemical compound [La].[Bi] RZEADQZDBXGRSM-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 239000005001 laminate film Substances 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 150000002926 oxygen Chemical class 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
- H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
Claims (10)
- 삭제
- 삭제
- 반도체 기판의 표층에 불순물 확산 영역을 형성하는 공정과,상기 반도체 기판 위에 절연막을 형성하는 공정과,상기 불순물 확산 영역 위의 절연막에 홀을 형성하는 공정과,상기 절연막의 상면과 상기 홀내에, 플러그용 도전막을 형성하는 공정과,상기 플러그용 도전막을 연마하여 상기 홀내에만 남기고, 상기 홀내의 상기 플러그용 도전막을 상기 불순물 확산 영역과 전기적으로 접속된 도전성 플러그로 하는 공정과,상기 절연막과 상기 도전성 플러그 각각의 상면에 바탕 도전막을 형성하는 공정과,상기 바탕 도전막의 상면을 연마하여 평탄화하는 공정과,상기 바탕 도전막 위에 결정성 도전막을 형성하는 공정과,상기 결정성 도전막 위에, 하부 전극, 강유전체 재료로 이루어진 커패시터 유전체막, 및 상부 전극을 순차로 적층하여 이루어지는 커패시터를 형성하는 공정을 갖는 것을 특징으로 하는 반도체 장치의 제조 방법.
- 제 3 항에 있어서,상기 바탕 도전막의 상면을 평탄화한 후에, 상기 바탕 도전막의 상면을 질소 함유 플라즈마에 노출하는 공정, 또는 상기 결정성 도전막의 상면을 질소 함유 플라즈마에 노출하는 공정을 행하는 것을 특징으로 하는 반도체 장치의 제조 방법.
- 제 4 항에 있어서,상기 질소 함유 플라즈마는 N2O플라즈마인 것을 특징으로 하는 반도체 장치의 제조 방법.
- 제 3 항에 있어서,상기 결정성 도전막을 형성하는 공정은 상기 바탕 도전막 위에 티탄막을 형성하는 공정과, 질소 함유 분위기내에서 상기 티탄막을 가열하여 질화하는 공정을 갖는 것을 특징으로 하는 반도체 장치의 제조 방법.
- 제 6 항에 있어서,상기 결정성 도전막을 형성한 후에, 상기 결정성 도전막 위에 산소 배리어 메탈막을 형성하는 공정을 가지며, 상기 커패시터를 형성하는 공정에서, 상기 산소 배리어 메탈막 위에 상기 커패시터를 형성하는 것을 특징으로 하는 반도체 장치의 제조 방법.
- 제 7 항에 있어서,상기 커패시터를 형성한 후에, 상기 커패시터 유전체막에 대하여 산소 함유 분위기중에서 어닐링을 행하는 공정을 갖는 것을 특징으로 하는 반도체 장치의 제조 방법.
- 제 8 항에 있어서,상기 어닐링을 행하는 공정 후에, 상기 커패시터로 덮여 있지 않는 부분의 상기 산소 배리어 메탈막, 상기 결정성 도전막, 및 상기 바탕 도전막을 에치백하여, 이 막들을 상기 커패시터 아래에 섬 형상으로 남기는 공정을 갖는 것을 특징으로 하는 반도체 장치의 제조 방법.
- 제 9 항에 있어서,상기 커패시터를 형성한 후에, 상기 커패시터 위와 상기 산소 배리어 메탈막 위에 커패시터 보호 절연막을 형성하는 공정을 가지며,상기 산소 배리어 메탈막을 에치백하는 공정에서, 상기 커패시터 보호 절연막도 에치백하여 상기 커패시터의 측면에만 상기 커패시터 보호 절연막을 남기는 것을 특징으로 하는 반도체 장치의 제조 방법.
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JPJP-P-2005-00307176 | 2005-10-21 | ||
JP2005307176A JP2007115972A (ja) | 2005-10-21 | 2005-10-21 | 半導体装置とその製造方法 |
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US (3) | US20070090438A1 (ko) |
JP (1) | JP2007115972A (ko) |
KR (2) | KR100774898B1 (ko) |
CN (1) | CN100552959C (ko) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
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JP5010121B2 (ja) * | 2005-08-17 | 2012-08-29 | セイコーエプソン株式会社 | 半導体装置の製造方法 |
JP2007115972A (ja) * | 2005-10-21 | 2007-05-10 | Fujitsu Ltd | 半導体装置とその製造方法 |
JP4721003B2 (ja) * | 2006-01-25 | 2011-07-13 | セイコーエプソン株式会社 | 半導体装置 |
JP4702550B2 (ja) * | 2006-01-27 | 2011-06-15 | セイコーエプソン株式会社 | 半導体装置の製造方法 |
JP4600322B2 (ja) * | 2006-03-14 | 2010-12-15 | セイコーエプソン株式会社 | 強誘電体メモリ装置の製造方法 |
KR101025189B1 (ko) * | 2006-03-30 | 2011-03-31 | 후지쯔 세미컨덕터 가부시키가이샤 | 반도체 장치 및 그 제조 방법 |
JP4164700B2 (ja) * | 2006-05-24 | 2008-10-15 | セイコーエプソン株式会社 | 強誘電体メモリおよびその製造方法 |
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US20100022031A1 (en) | 2010-01-28 |
US8124476B2 (en) | 2012-02-28 |
US20070090438A1 (en) | 2007-04-26 |
CN100552959C (zh) | 2009-10-21 |
US20120115252A1 (en) | 2012-05-10 |
KR20070094717A (ko) | 2007-09-21 |
CN1953184A (zh) | 2007-04-25 |
KR20070043563A (ko) | 2007-04-25 |
US8361861B2 (en) | 2013-01-29 |
KR100878868B1 (ko) | 2009-01-15 |
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