KR100878868B1 - 반도체 장치 - Google Patents
반도체 장치 Download PDFInfo
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- KR100878868B1 KR100878868B1 KR1020070088850A KR20070088850A KR100878868B1 KR 100878868 B1 KR100878868 B1 KR 100878868B1 KR 1020070088850 A KR1020070088850 A KR 1020070088850A KR 20070088850 A KR20070088850 A KR 20070088850A KR 100878868 B1 KR100878868 B1 KR 100878868B1
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- South Korea
- Prior art keywords
- film
- conductive film
- conductive
- insulating film
- capacitor
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 54
- 239000003990 capacitor Substances 0.000 claims abstract description 86
- 239000000758 substrate Substances 0.000 claims abstract description 48
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 33
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 33
- 239000010703 silicon Substances 0.000 claims abstract description 33
- 239000000463 material Substances 0.000 claims abstract description 22
- 239000012535 impurity Substances 0.000 claims abstract description 20
- 238000009792 diffusion process Methods 0.000 claims abstract description 17
- 238000000034 method Methods 0.000 claims description 41
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 25
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 12
- 229910052721 tungsten Inorganic materials 0.000 claims description 12
- 239000010937 tungsten Substances 0.000 claims description 12
- 239000002344 surface layer Substances 0.000 claims description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 abstract description 57
- 239000001301 oxygen Substances 0.000 abstract description 56
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 55
- 229910052751 metal Inorganic materials 0.000 abstract description 49
- 239000002184 metal Substances 0.000 abstract description 49
- 230000004888 barrier function Effects 0.000 abstract description 33
- 238000004519 manufacturing process Methods 0.000 abstract description 32
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 abstract description 11
- 238000010030 laminating Methods 0.000 abstract description 4
- 210000002381 plasma Anatomy 0.000 abstract 1
- 238000000137 annealing Methods 0.000 description 24
- 239000010410 layer Substances 0.000 description 22
- 238000004544 sputter deposition Methods 0.000 description 22
- 239000007789 gas Substances 0.000 description 18
- 229910052741 iridium Inorganic materials 0.000 description 18
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 18
- 230000001681 protective effect Effects 0.000 description 18
- 238000005498 polishing Methods 0.000 description 15
- 230000008569 process Effects 0.000 description 13
- 239000013078 crystal Substances 0.000 description 11
- 238000005530 etching Methods 0.000 description 11
- 239000003292 glue Substances 0.000 description 10
- 238000011084 recovery Methods 0.000 description 10
- 239000010936 titanium Substances 0.000 description 10
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 9
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 8
- 230000015654 memory Effects 0.000 description 8
- 238000009832 plasma treatment Methods 0.000 description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 8
- 229910052719 titanium Inorganic materials 0.000 description 8
- 230000009471 action Effects 0.000 description 6
- UQZIWOQVLUASCR-UHFFFAOYSA-N alumane;titanium Chemical compound [AlH3].[Ti] UQZIWOQVLUASCR-UHFFFAOYSA-N 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- HTXDPTMKBJXEOW-UHFFFAOYSA-N dioxoiridium Chemical compound O=[Ir]=O HTXDPTMKBJXEOW-UHFFFAOYSA-N 0.000 description 6
- 238000002955 isolation Methods 0.000 description 6
- 230000010287 polarization Effects 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 230000006870 function Effects 0.000 description 5
- 229910000457 iridium oxide Inorganic materials 0.000 description 5
- 238000002844 melting Methods 0.000 description 5
- 230000008018 melting Effects 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 4
- 229910052707 ruthenium Inorganic materials 0.000 description 4
- 230000003064 anti-oxidating effect Effects 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 238000002425 crystallisation Methods 0.000 description 3
- 230000008025 crystallization Effects 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- 229910021332 silicide Inorganic materials 0.000 description 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 3
- 230000002269 spontaneous effect Effects 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910004121 SrRuO Inorganic materials 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 229910052762 osmium Inorganic materials 0.000 description 2
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229910052702 rhenium Inorganic materials 0.000 description 2
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 2
- 229910052703 rhodium Inorganic materials 0.000 description 2
- 239000010948 rhodium Substances 0.000 description 2
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000004627 transmission electron microscopy Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- RZEADQZDBXGRSM-UHFFFAOYSA-N bismuth lanthanum Chemical compound [La].[Bi] RZEADQZDBXGRSM-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 239000005001 laminate film Substances 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 150000002926 oxygen Chemical class 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
- H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
Claims (3)
- 반도체 기판과,상기 반도체 기판의 표층에 형성된 불순물 확산 영역과,상기 반도체 기판 위에 형성되며, 상기 불순물 확산 영역 위에 홀을 구비한 절연막과,상기 홀 내에 형성되어 상기 불순물 확산 영역과 전기적으로 접속되며, 상기 절연막의 상면보다도 상면의 높이가 낮은 도전성 플러그와,상기 도전성 플러그 위에 상기 절연막의 상면보다도 낮게 되어 있는 부분을 갖고, 상기 도전성 플러그와 상기 절연막 위에 상기 도전성 플러그의 폭보다도 넓은 범위에서 형성되어, 상면이 평탄한 바탕 도전막과,상기 바탕 도전막 위에 형성된 결정성 도전막과,상기 결정성 도전막 위에, 하부 전극, 강유전체 재료로 이루어진 커패시터 유전체막, 및 상부 전극을 순차로 적층하여 형성된 커패시터를 갖는 것을 특징으로 하는 반도체 장치.
- 제 1 항에 있어서,상기 바탕 도전막은 텅스텐막, 실리콘막, 질화 티탄막, 및 구리막 중 어느 하나인 것을 특징으로 하는 반도체 장치.
- 제 1 항에 있어서,상기 결정성 도전막은 질화 티탄막인 것을 특징으로 하는 반도체 장치.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005307176A JP2007115972A (ja) | 2005-10-21 | 2005-10-21 | 半導体装置とその製造方法 |
JPJP-P-2005-00307176 | 2005-10-21 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020060011084A Division KR100774898B1 (ko) | 2005-10-21 | 2006-02-06 | 반도체 장치의 제조 방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20070094717A KR20070094717A (ko) | 2007-09-21 |
KR100878868B1 true KR100878868B1 (ko) | 2009-01-15 |
Family
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Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020060011084A KR100774898B1 (ko) | 2005-10-21 | 2006-02-06 | 반도체 장치의 제조 방법 |
KR1020070088850A KR100878868B1 (ko) | 2005-10-21 | 2007-09-03 | 반도체 장치 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
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KR1020060011084A KR100774898B1 (ko) | 2005-10-21 | 2006-02-06 | 반도체 장치의 제조 방법 |
Country Status (4)
Country | Link |
---|---|
US (3) | US20070090438A1 (ko) |
JP (1) | JP2007115972A (ko) |
KR (2) | KR100774898B1 (ko) |
CN (1) | CN100552959C (ko) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5010121B2 (ja) * | 2005-08-17 | 2012-08-29 | セイコーエプソン株式会社 | 半導体装置の製造方法 |
JP2007115972A (ja) * | 2005-10-21 | 2007-05-10 | Fujitsu Ltd | 半導体装置とその製造方法 |
JP4721003B2 (ja) * | 2006-01-25 | 2011-07-13 | セイコーエプソン株式会社 | 半導体装置 |
JP4702550B2 (ja) * | 2006-01-27 | 2011-06-15 | セイコーエプソン株式会社 | 半導体装置の製造方法 |
JP4600322B2 (ja) * | 2006-03-14 | 2010-12-15 | セイコーエプソン株式会社 | 強誘電体メモリ装置の製造方法 |
WO2007116445A1 (ja) * | 2006-03-30 | 2007-10-18 | Fujitsu Limited | 半導体装置及びその製造方法 |
JP4164700B2 (ja) * | 2006-05-24 | 2008-10-15 | セイコーエプソン株式会社 | 強誘電体メモリおよびその製造方法 |
KR100755373B1 (ko) * | 2006-09-15 | 2007-09-04 | 삼성전자주식회사 | 도전성 산화막을 갖는 콘택 구조체, 이를 채택하는강유전체 메모리 소자 및 그 제조방법들 |
JP5242044B2 (ja) * | 2006-11-29 | 2013-07-24 | セイコーエプソン株式会社 | 強誘電体メモリ装置とその製造方法 |
US7772014B2 (en) * | 2007-08-28 | 2010-08-10 | Texas Instruments Incorporated | Semiconductor device having reduced single bit fails and a method of manufacture thereof |
JP5232935B2 (ja) * | 2010-06-21 | 2013-07-10 | パナソニック株式会社 | 抵抗変化素子の製造方法 |
US8815706B2 (en) * | 2012-01-20 | 2014-08-26 | Infineon Technologies Ag | Methods of forming semiconductor devices |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
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KR20020058573A (ko) * | 2000-12-30 | 2002-07-12 | 박종섭 | 반도체소자 및 그 제조 방법 |
KR20020094175A (ko) * | 2001-06-12 | 2002-12-18 | 주식회사 하이닉스반도체 | 메모리 소자의 제조방법 |
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JPH0722578A (ja) | 1993-07-05 | 1995-01-24 | Hitachi Ltd | 積層集積半導体装置及びその製造方法 |
JP3679814B2 (ja) * | 1993-09-03 | 2005-08-03 | セイコーエプソン株式会社 | 記憶装置 |
JP3380372B2 (ja) * | 1995-06-30 | 2003-02-24 | 三菱電機株式会社 | 半導体記憶装置の製造方法 |
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JP4703937B2 (ja) * | 2002-11-18 | 2011-06-15 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
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JP2007115972A (ja) * | 2005-10-21 | 2007-05-10 | Fujitsu Ltd | 半導体装置とその製造方法 |
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2005
- 2005-10-21 JP JP2005307176A patent/JP2007115972A/ja active Pending
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2006
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- 2006-02-15 CN CNB2006100092085A patent/CN100552959C/zh not_active Expired - Fee Related
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2007
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Patent Citations (2)
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KR20020058573A (ko) * | 2000-12-30 | 2002-07-12 | 박종섭 | 반도체소자 및 그 제조 방법 |
KR20020094175A (ko) * | 2001-06-12 | 2002-12-18 | 주식회사 하이닉스반도체 | 메모리 소자의 제조방법 |
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KR100774898B1 (ko) | 2007-11-09 |
US8124476B2 (en) | 2012-02-28 |
CN100552959C (zh) | 2009-10-21 |
CN1953184A (zh) | 2007-04-25 |
JP2007115972A (ja) | 2007-05-10 |
US20120115252A1 (en) | 2012-05-10 |
US20070090438A1 (en) | 2007-04-26 |
KR20070043563A (ko) | 2007-04-25 |
US20100022031A1 (en) | 2010-01-28 |
US8361861B2 (en) | 2013-01-29 |
KR20070094717A (ko) | 2007-09-21 |
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