KR100773238B1 - 고순도 Ni―V 합금, 동Ni―V 합금으로 이루어진타겟트 및 동Ni―V 합금 박막과 고순도 Ni―V 합금의제조방법 - Google Patents
고순도 Ni―V 합금, 동Ni―V 합금으로 이루어진타겟트 및 동Ni―V 합금 박막과 고순도 Ni―V 합금의제조방법 Download PDFInfo
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- KR100773238B1 KR100773238B1 KR1020067005951A KR20067005951A KR100773238B1 KR 100773238 B1 KR100773238 B1 KR 100773238B1 KR 1020067005951 A KR1020067005951 A KR 1020067005951A KR 20067005951 A KR20067005951 A KR 20067005951A KR 100773238 B1 KR100773238 B1 KR 100773238B1
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- alloy
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- thin film
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C19/00—Alloys based on nickel or cobalt
- C22C19/03—Alloys based on nickel or cobalt based on nickel
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physical Vapour Deposition (AREA)
- Manufacture And Refinement Of Metals (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003348119 | 2003-10-07 | ||
JPJP-P-2003-00348119 | 2003-10-07 |
Publications (2)
Publication Number | Publication Date |
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KR20060057017A KR20060057017A (ko) | 2006-05-25 |
KR100773238B1 true KR100773238B1 (ko) | 2007-11-02 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020067005951A KR100773238B1 (ko) | 2003-10-07 | 2004-09-08 | 고순도 Ni―V 합금, 동Ni―V 합금으로 이루어진타겟트 및 동Ni―V 합금 박막과 고순도 Ni―V 합금의제조방법 |
Country Status (7)
Country | Link |
---|---|
US (2) | US8871144B2 (zh) |
EP (1) | EP1672086B1 (zh) |
JP (2) | JP4447556B2 (zh) |
KR (1) | KR100773238B1 (zh) |
CN (2) | CN100516266C (zh) |
TW (1) | TW200513544A (zh) |
WO (1) | WO2005035809A1 (zh) |
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JP4376487B2 (ja) * | 2002-01-18 | 2009-12-02 | 日鉱金属株式会社 | 高純度ニッケル合金ターゲットの製造方法 |
JP4466902B2 (ja) * | 2003-01-10 | 2010-05-26 | 日鉱金属株式会社 | ニッケル合金スパッタリングターゲット |
WO2005041290A1 (ja) * | 2003-10-24 | 2005-05-06 | Nikko Materials Co., Ltd. | ニッケル合金スパッタリングターゲット及びニッケル合金薄膜 |
KR101021488B1 (ko) * | 2004-03-01 | 2011-03-16 | Jx닛코 닛세끼 킨조쿠 가부시키가이샤 | 니켈-플라티늄 합금 및 동(同) 합금 타겟트 |
CN101660123B (zh) * | 2008-08-28 | 2013-08-14 | 长沙天鹰金属材料有限公司 | 一种镍基靶材及生产工艺 |
US20100108503A1 (en) * | 2008-10-31 | 2010-05-06 | Applied Quantum Technology, Llc | Chalcogenide alloy sputter targets for photovoltaic applications and methods of manufacturing the same |
JP2009167530A (ja) | 2009-02-10 | 2009-07-30 | Nippon Mining & Metals Co Ltd | ニッケル合金スパッタリングターゲット及びニッケルシリサイド膜 |
TWI408049B (zh) * | 2010-11-17 | 2013-09-11 | Jx Nippon Mining & Metals Corp | Copper foil for printed wiring board |
JP4799710B1 (ja) * | 2010-11-17 | 2011-10-26 | Jx日鉱日石金属株式会社 | プリント配線板用銅箔 |
CN102154578A (zh) * | 2011-03-22 | 2011-08-17 | 北京工业大学 | 一种无磁性织构NiV合金基带及其熔炼制备方法 |
CN104014767B (zh) * | 2014-06-05 | 2016-05-04 | 贵研铂业股份有限公司 | 一种制备NiV合金靶材的方法 |
CN104480329A (zh) * | 2014-12-07 | 2015-04-01 | 金川集团股份有限公司 | 一种制备金属合金铸块的方法 |
CN106290425A (zh) * | 2016-07-13 | 2017-01-04 | 东莞中子科学中心 | 一种用于制备中子散射实验样品盒的钒镍合金及其应用 |
CN110358957B (zh) * | 2019-07-31 | 2021-05-14 | 江苏美特林科特殊合金股份有限公司 | 一种镍钒中间合金及其制备方法 |
CN110468382B (zh) * | 2019-09-12 | 2021-04-09 | 南京达迈科技实业有限公司 | 一种含微量元素的大管径Ni-V旋转靶材及其制备方法 |
CN111549324A (zh) * | 2020-06-17 | 2020-08-18 | 宁波江丰电子材料股份有限公司 | 一种NiV合金靶材及其成型的方法与用途 |
CN115747536A (zh) * | 2022-10-11 | 2023-03-07 | 散裂中子源科学中心 | 一种中子散射实验用钒镍合金及其制备方法和应用 |
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KR101136065B1 (ko) * | 2009-11-10 | 2012-04-24 | 홀텍 크리스탈 컴퍼니 리미티드 | 레이저 가공 장치 |
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CA1180779A (en) * | 1981-09-25 | 1985-01-08 | Elliott Philofsky | Ceramic capacitor and method of making same |
JPH0635654B2 (ja) | 1985-08-13 | 1994-05-11 | 住友特殊金属株式会社 | 雰囲気変動に対する薄膜磁気特性の安定度の高いタ−ゲツト材 |
JPH06104120A (ja) * | 1992-08-03 | 1994-04-15 | Hitachi Metals Ltd | 磁気記録媒体用スパッタリングターゲットおよびその製造方法 |
JPH1136065A (ja) | 1997-07-16 | 1999-02-09 | Sanken Electric Co Ltd | ニッケルを主成分とする導体層の形成方法 |
US5964966A (en) * | 1997-09-19 | 1999-10-12 | Lockheed Martin Energy Research Corporation | Method of forming biaxially textured alloy substrates and devices thereon |
JPH11335821A (ja) * | 1998-05-20 | 1999-12-07 | Japan Energy Corp | 磁性薄膜形成用Ni−Fe合金スパッタリングターゲット、磁性薄膜および磁性薄膜形成用Ni−Fe合金スパッタリングターゲットの製造方法 |
JP4017747B2 (ja) | 1998-06-04 | 2007-12-05 | 株式会社アルバック | Bm膜製造方法 |
IT1302855B1 (it) | 1998-06-15 | 2000-10-10 | Enea Ente Nuove Tec | Substrato metallico non magnetico per superconduttori ad altatemperatura e relativo procedimento di produzione. |
JP2000169957A (ja) | 1998-12-04 | 2000-06-20 | Sumitomo Metal Mining Co Ltd | V−Ni系ターゲット材料、電極材料、及び実装部品 |
US6342114B1 (en) * | 1999-03-31 | 2002-01-29 | Praxair S.T. Technology, Inc. | Nickel/vanadium sputtering target with ultra-low alpha emission |
AU1750901A (en) * | 1999-07-23 | 2001-03-05 | American Superconductor Corporation | Dust cover/pellicle for a photomask |
JP3853591B2 (ja) | 1999-12-17 | 2006-12-06 | ジオマテック株式会社 | 遮光膜、低反射膜およびその用途 |
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JP4376487B2 (ja) * | 2002-01-18 | 2009-12-02 | 日鉱金属株式会社 | 高純度ニッケル合金ターゲットの製造方法 |
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WO2005041290A1 (ja) | 2003-10-24 | 2005-05-06 | Nikko Materials Co., Ltd. | ニッケル合金スパッタリングターゲット及びニッケル合金薄膜 |
KR101021488B1 (ko) * | 2004-03-01 | 2011-03-16 | Jx닛코 닛세끼 킨조쿠 가부시키가이샤 | 니켈-플라티늄 합금 및 동(同) 합금 타겟트 |
US20070074779A1 (en) * | 2005-09-27 | 2007-04-05 | Kim Sung S | Safety piping system |
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2004
- 2004-09-08 WO PCT/JP2004/013027 patent/WO2005035809A1/ja active Application Filing
- 2004-09-08 EP EP04787710.5A patent/EP1672086B1/en active Active
- 2004-09-08 KR KR1020067005951A patent/KR100773238B1/ko active IP Right Grant
- 2004-09-08 CN CNB2004800268128A patent/CN100516266C/zh active Active
- 2004-09-08 CN CN2007101865812A patent/CN101186979B/zh active Active
- 2004-09-08 JP JP2005514540A patent/JP4447556B2/ja active Active
- 2004-09-08 US US10/570,748 patent/US8871144B2/en active Active
- 2004-09-17 TW TW093128206A patent/TW200513544A/zh unknown
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2009
- 2009-10-19 JP JP2009240465A patent/JP5080543B2/ja active Active
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2010
- 2010-06-09 US US12/796,718 patent/US7938918B2/en active Active
Patent Citations (1)
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KR101136065B1 (ko) * | 2009-11-10 | 2012-04-24 | 홀텍 크리스탈 컴퍼니 리미티드 | 레이저 가공 장치 |
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Also Published As
Publication number | Publication date |
---|---|
CN101186979A (zh) | 2008-05-28 |
TW200513544A (en) | 2005-04-16 |
US8871144B2 (en) | 2014-10-28 |
JP5080543B2 (ja) | 2012-11-21 |
EP1672086B1 (en) | 2019-03-13 |
US20100242674A1 (en) | 2010-09-30 |
CN1852998A (zh) | 2006-10-25 |
WO2005035809A1 (ja) | 2005-04-21 |
US20060292028A1 (en) | 2006-12-28 |
EP1672086A4 (en) | 2008-04-09 |
TWI291995B (zh) | 2008-01-01 |
JP2010047845A (ja) | 2010-03-04 |
EP1672086A1 (en) | 2006-06-21 |
JP4447556B2 (ja) | 2010-04-07 |
JPWO2005035809A1 (ja) | 2008-06-12 |
US7938918B2 (en) | 2011-05-10 |
KR20060057017A (ko) | 2006-05-25 |
CN100516266C (zh) | 2009-07-22 |
CN101186979B (zh) | 2012-06-13 |
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