KR101021488B1 - 니켈-플라티늄 합금 및 동(同) 합금 타겟트 - Google Patents
니켈-플라티늄 합금 및 동(同) 합금 타겟트 Download PDFInfo
- Publication number
- KR101021488B1 KR101021488B1 KR1020097019099A KR20097019099A KR101021488B1 KR 101021488 B1 KR101021488 B1 KR 101021488B1 KR 1020097019099 A KR1020097019099 A KR 1020097019099A KR 20097019099 A KR20097019099 A KR 20097019099A KR 101021488 B1 KR101021488 B1 KR 101021488B1
- Authority
- KR
- South Korea
- Prior art keywords
- alloy
- target
- high purity
- hardness
- powder
- Prior art date
Links
- 229910001260 Pt alloy Inorganic materials 0.000 title claims abstract description 45
- 239000000956 alloy Substances 0.000 title description 6
- 229910045601 alloy Inorganic materials 0.000 title description 5
- 238000005477 sputtering target Methods 0.000 claims description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract description 17
- 238000000034 method Methods 0.000 abstract description 15
- 239000000843 powder Substances 0.000 abstract description 11
- 238000005096 rolling process Methods 0.000 abstract description 11
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 9
- 239000002994 raw material Substances 0.000 abstract description 9
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 abstract description 8
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 abstract description 8
- 238000004519 manufacturing process Methods 0.000 abstract description 8
- 239000012535 impurity Substances 0.000 abstract description 6
- 238000002386 leaching Methods 0.000 abstract description 5
- 229910021529 ammonia Inorganic materials 0.000 abstract description 4
- 239000001569 carbon dioxide Substances 0.000 abstract description 4
- 229910002092 carbon dioxide Inorganic materials 0.000 abstract description 4
- 229910000008 nickel(II) carbonate Inorganic materials 0.000 abstract description 4
- ZULUUIKRFGGGTL-UHFFFAOYSA-L nickel(ii) carbonate Chemical compound [Ni+2].[O-]C([O-])=O ZULUUIKRFGGGTL-UHFFFAOYSA-L 0.000 abstract description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 3
- 239000002253 acid Substances 0.000 abstract description 3
- 239000010949 copper Substances 0.000 abstract description 3
- 229910052802 copper Inorganic materials 0.000 abstract description 3
- 238000001914 filtration Methods 0.000 abstract description 2
- 230000003472 neutralizing effect Effects 0.000 abstract description 2
- 238000007664 blowing Methods 0.000 abstract 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 27
- 238000005336 cracking Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 5
- 230000002159 abnormal effect Effects 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 238000005266 casting Methods 0.000 description 3
- 238000004070 electrodeposition Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000005097 cold rolling Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000004663 powder metallurgy Methods 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000009770 conventional sintering Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F9/00—Making metallic powder or suspensions thereof
- B22F9/16—Making metallic powder or suspensions thereof using chemical processes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F9/00—Making metallic powder or suspensions thereof
- B22F9/16—Making metallic powder or suspensions thereof using chemical processes
- B22F9/18—Making metallic powder or suspensions thereof using chemical processes with reduction of metal compounds
- B22F9/24—Making metallic powder or suspensions thereof using chemical processes with reduction of metal compounds starting from liquid metal compounds, e.g. solutions
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C19/00—Alloys based on nickel or cobalt
- C22C19/03—Alloys based on nickel or cobalt based on nickel
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25C—PROCESSES FOR THE ELECTROLYTIC PRODUCTION, RECOVERY OR REFINING OF METALS; APPARATUS THEREFOR
- C25C1/00—Electrolytic production, recovery or refining of metals by electrolysis of solutions
- C25C1/20—Electrolytic production, recovery or refining of metals by electrolysis of solutions of noble metals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28088—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being a composite, e.g. TiN
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Electrochemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Physical Vapour Deposition (AREA)
- Manufacture And Refinement Of Metals (AREA)
- Manufacture Of Metal Powder And Suspensions Thereof (AREA)
Abstract
Description
Claims (4)
- Pt 함유량이 0.1~20wt%인 Ni-Pt 합금으로서, 비커스 경도가 40~90인 것을 특징으로 하는 가공성이 우수한 스퍼터링 타겟트 용 Ni-Pt 합금.
- 제1항에 있어서, 99.99% 이상의 순도를 가지는 것을 특징으로 하는 스퍼터링 타겟트 용 Ni-Pt 합금
- Pt 함유량이 0.1~20wt%인 Ni-Pt 합금으로서, 비커스 경도가 40~90인 것을 특징으로 하는 가공성이 우수한 Ni-Pt 합금 타겟트.
- 제3항에 있어서, 99.99% 이상의 순도를 가지는 것을 특징으로 하는 Ni-Pt 합금 타겟트.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2004-056097 | 2004-03-01 | ||
JP2004056097 | 2004-03-01 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020067019867A Division KR100925691B1 (ko) | 2004-03-01 | 2005-02-08 | 니켈-플라티늄 합금 및 동(同) 합금 타겟트 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20090101393A KR20090101393A (ko) | 2009-09-25 |
KR101021488B1 true KR101021488B1 (ko) | 2011-03-16 |
Family
ID=34908895
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020097019099A KR101021488B1 (ko) | 2004-03-01 | 2005-02-08 | 니켈-플라티늄 합금 및 동(同) 합금 타겟트 |
KR1020067019867A KR100925691B1 (ko) | 2004-03-01 | 2005-02-08 | 니켈-플라티늄 합금 및 동(同) 합금 타겟트 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020067019867A KR100925691B1 (ko) | 2004-03-01 | 2005-02-08 | 니켈-플라티늄 합금 및 동(同) 합금 타겟트 |
Country Status (7)
Country | Link |
---|---|
US (2) | US20070098590A1 (ko) |
EP (2) | EP1721997B1 (ko) |
JP (2) | JP4409572B2 (ko) |
KR (2) | KR101021488B1 (ko) |
CN (1) | CN100567535C (ko) |
TW (1) | TWI264480B (ko) |
WO (1) | WO2005083138A1 (ko) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4376487B2 (ja) * | 2002-01-18 | 2009-12-02 | 日鉱金属株式会社 | 高純度ニッケル合金ターゲットの製造方法 |
JP4466902B2 (ja) * | 2003-01-10 | 2010-05-26 | 日鉱金属株式会社 | ニッケル合金スパッタリングターゲット |
WO2005035809A1 (ja) * | 2003-10-07 | 2005-04-21 | Nikko Materials Co., Ltd. | 高純度Ni−V合金、同Ni−V合金からなるターゲット及び同Ni−V合金薄膜並びに高純度Ni−V合金の製造方法 |
WO2005041290A1 (ja) * | 2003-10-24 | 2005-05-06 | Nikko Materials Co., Ltd. | ニッケル合金スパッタリングターゲット及びニッケル合金薄膜 |
KR101021488B1 (ko) * | 2004-03-01 | 2011-03-16 | Jx닛코 닛세끼 킨조쿠 가부시키가이샤 | 니켈-플라티늄 합금 및 동(同) 합금 타겟트 |
US20090028744A1 (en) * | 2007-07-23 | 2009-01-29 | Heraeus, Inc. | Ultra-high purity NiPt alloys and sputtering targets comprising same |
WO2009119196A1 (ja) * | 2008-03-28 | 2009-10-01 | 日鉱金属株式会社 | 磁性材ターゲット用白金粉末、同粉末の製造方法、白金焼結体からなる磁性材ターゲットの製造方法及び同焼結磁性材ターゲット |
US20100154867A1 (en) | 2008-12-19 | 2010-06-24 | E. I. Du Pont De Nemours And Company | Mechanically reliable solar cell modules |
KR101032011B1 (ko) | 2009-02-10 | 2011-05-02 | 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 | 니켈 합금 스퍼터링 타겟 및 니켈실리사이드막 |
JP2009167530A (ja) * | 2009-02-10 | 2009-07-30 | Nippon Mining & Metals Co Ltd | ニッケル合金スパッタリングターゲット及びニッケルシリサイド膜 |
EP2548994B1 (en) | 2010-03-19 | 2015-11-04 | JX Nippon Mining & Metals Corporation | NICKEL ALLOY SPUTTERING TARGET, THIN Ni ALLOY FILM, AND NICKEL SILICIDE FILM |
JP5226155B2 (ja) | 2010-08-31 | 2013-07-03 | Jx日鉱日石金属株式会社 | Fe−Pt系強磁性材スパッタリングターゲット |
US8968537B2 (en) * | 2011-02-09 | 2015-03-03 | Applied Materials, Inc. | PVD sputtering target with a protected backing plate |
JP6340621B2 (ja) * | 2013-07-26 | 2018-06-13 | 三菱マテリアル株式会社 | Niスパッタリングターゲット及びその製造方法 |
CN104726829A (zh) * | 2013-12-18 | 2015-06-24 | 有研亿金新材料股份有限公司 | 一种高纯NiPt合金靶材及其制备方法 |
KR101908334B1 (ko) | 2014-03-27 | 2018-10-16 | 제이엑스금속주식회사 | Ni-P 합금 또는 Ni-Pt-P 합금으로 이루어지는 스퍼터링 타깃 및 그 제조 방법 |
CN104018128B (zh) * | 2014-05-29 | 2016-08-24 | 贵研铂业股份有限公司 | 一种镍铂合金溅射靶材及其制备方法 |
EP3149333A1 (en) | 2014-05-30 | 2017-04-05 | National Oilwell Varco, L.P. | Wellsite pump with integrated driver and hydraulic motor and method of using same |
WO2016208704A1 (ja) | 2015-06-26 | 2016-12-29 | 国立大学法人東京工業大学 | 半導体デバイス電極用のシリサイド合金膜及びシリサイド合金膜の製造方法 |
CN106282639B (zh) * | 2016-09-19 | 2018-02-16 | 中材科技股份有限公司 | 一种铂镍合金溅射靶材及其制备方法 |
CN111304608B (zh) * | 2020-03-17 | 2021-10-15 | 贵研铂业股份有限公司 | 一种晶粒高定向取向的镍铂合金溅射靶材及其制备方法 |
CN113881920A (zh) * | 2020-07-03 | 2022-01-04 | 光洋应用材料科技股份有限公司 | 镍铂合金靶材及其制法 |
CN112853131B (zh) * | 2020-12-30 | 2022-07-19 | 有研亿金新材料有限公司 | 一种高纯度低气体含量镍铂合金的制备方法 |
IT202100003281A1 (it) | 2021-02-15 | 2022-08-15 | Bluclad S P A | Lega pt-ni elettrodepositata anallergica e relativi bagno e ciclo galvanico |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
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GB2242203A (en) | 1990-03-21 | 1991-09-25 | Johnson Matthey Plc | Catalyst material comprising platinum alloy supported on carbon |
JP2003213406A (ja) * | 2002-01-18 | 2003-07-30 | Nikko Materials Co Ltd | 高純度ニッケル又はニッケル合金ターゲット及びその製造方法 |
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US2269497A (en) * | 1940-08-26 | 1942-01-13 | Owens Corning Flberglas Corp | Nickel-platinum alloy |
JPS6333563A (ja) | 1986-07-25 | 1988-02-13 | Tanaka Kikinzoku Kogyo Kk | スパツタリング用Pt−Ni合金タ−ゲツトの製造方法 |
US5188713A (en) * | 1991-03-05 | 1993-02-23 | Envirochip Technologies Ltd. | Process for recovery of metal |
JPH0543921A (ja) * | 1991-08-12 | 1993-02-23 | Murata Mfg Co Ltd | ニツケル微粉末の製造方法 |
US5282946A (en) * | 1991-08-30 | 1994-02-01 | Mitsubishi Materials Corporation | Platinum-cobalt alloy sputtering target and method for manufacturing same |
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JPH11152592A (ja) * | 1997-11-18 | 1999-06-08 | Japan Energy Corp | 高純度ニッケルの製造方法及び薄膜形成用高純度ニッケル材料 |
JPH11335821A (ja) | 1998-05-20 | 1999-12-07 | Japan Energy Corp | 磁性薄膜形成用Ni−Fe合金スパッタリングターゲット、磁性薄膜および磁性薄膜形成用Ni−Fe合金スパッタリングターゲットの製造方法 |
SG97821A1 (en) * | 1999-11-17 | 2003-08-20 | Inst Materials Research & Eng | A method of fabricating semiconductor structures and a semiconductor structure formed thereby |
US20020139457A1 (en) * | 2001-04-02 | 2002-10-03 | Coppola Vito A. | Method of suppressing the oxidation characteristics of nickel |
US7435325B2 (en) * | 2001-08-01 | 2008-10-14 | Nippon Mining & Metals Co., Ltd | Method for producing high purity nickle, high purity nickle, sputtering target comprising the high purity nickel, and thin film formed by using said spattering target |
JP2003213405A (ja) * | 2002-01-18 | 2003-07-30 | Nikko Materials Co Ltd | 高純度ニッケル又はニッケル合金ターゲット及びその製造方法 |
JP2003213407A (ja) * | 2002-01-24 | 2003-07-30 | Nikko Materials Co Ltd | 高純度ニッケル又はニッケル合金スパッタリングターゲット及びその製造方法 |
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JP4466902B2 (ja) * | 2003-01-10 | 2010-05-26 | 日鉱金属株式会社 | ニッケル合金スパッタリングターゲット |
WO2005035809A1 (ja) * | 2003-10-07 | 2005-04-21 | Nikko Materials Co., Ltd. | 高純度Ni−V合金、同Ni−V合金からなるターゲット及び同Ni−V合金薄膜並びに高純度Ni−V合金の製造方法 |
WO2005041290A1 (ja) * | 2003-10-24 | 2005-05-06 | Nikko Materials Co., Ltd. | ニッケル合金スパッタリングターゲット及びニッケル合金薄膜 |
KR101021488B1 (ko) * | 2004-03-01 | 2011-03-16 | Jx닛코 닛세끼 킨조쿠 가부시키가이샤 | 니켈-플라티늄 합금 및 동(同) 합금 타겟트 |
-
2005
- 2005-02-08 KR KR1020097019099A patent/KR101021488B1/ko active IP Right Grant
- 2005-02-08 EP EP05709865A patent/EP1721997B1/en active Active
- 2005-02-08 WO PCT/JP2005/001813 patent/WO2005083138A1/ja active Application Filing
- 2005-02-08 EP EP11188413.6A patent/EP2468906B1/en active Active
- 2005-02-08 KR KR1020067019867A patent/KR100925691B1/ko active IP Right Grant
- 2005-02-08 JP JP2006510388A patent/JP4409572B2/ja active Active
- 2005-02-08 US US10/596,671 patent/US20070098590A1/en not_active Abandoned
- 2005-02-08 CN CNB2005800065132A patent/CN100567535C/zh active Active
- 2005-02-21 TW TW094105007A patent/TWI264480B/zh active
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2009
- 2009-10-09 JP JP2009235184A patent/JP5113134B2/ja active Active
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2010
- 2010-11-30 US US12/957,013 patent/US7959782B2/en active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2242203A (en) | 1990-03-21 | 1991-09-25 | Johnson Matthey Plc | Catalyst material comprising platinum alloy supported on carbon |
JP2003213406A (ja) * | 2002-01-18 | 2003-07-30 | Nikko Materials Co Ltd | 高純度ニッケル又はニッケル合金ターゲット及びその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
KR20060114384A (ko) | 2006-11-06 |
TW200530429A (en) | 2005-09-16 |
KR20090101393A (ko) | 2009-09-25 |
JP4409572B2 (ja) | 2010-02-03 |
KR100925691B1 (ko) | 2009-11-10 |
EP2468906B1 (en) | 2014-07-23 |
US7959782B2 (en) | 2011-06-14 |
JP5113134B2 (ja) | 2013-01-09 |
TWI264480B (en) | 2006-10-21 |
JPWO2005083138A1 (ja) | 2007-11-22 |
WO2005083138A1 (ja) | 2005-09-09 |
CN1926254A (zh) | 2007-03-07 |
JP2010047843A (ja) | 2010-03-04 |
EP1721997A4 (en) | 2009-11-11 |
EP1721997A1 (en) | 2006-11-15 |
US20070098590A1 (en) | 2007-05-03 |
CN100567535C (zh) | 2009-12-09 |
EP1721997B1 (en) | 2012-03-28 |
US20110068014A1 (en) | 2011-03-24 |
EP2468906A1 (en) | 2012-06-27 |
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