CN1852998A - 高纯度Ni-V合金、由该Ni-V合金形成的靶以及该Ni-V合金薄膜和高纯度Ni-V合金的制造方法 - Google Patents
高纯度Ni-V合金、由该Ni-V合金形成的靶以及该Ni-V合金薄膜和高纯度Ni-V合金的制造方法 Download PDFInfo
- Publication number
- CN1852998A CN1852998A CNA2004800268128A CN200480026812A CN1852998A CN 1852998 A CN1852998 A CN 1852998A CN A2004800268128 A CNA2004800268128 A CN A2004800268128A CN 200480026812 A CN200480026812 A CN 200480026812A CN 1852998 A CN1852998 A CN 1852998A
- Authority
- CN
- China
- Prior art keywords
- alloy
- purity
- target
- weight
- raw material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C19/00—Alloys based on nickel or cobalt
- C22C19/03—Alloys based on nickel or cobalt based on nickel
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physical Vapour Deposition (AREA)
- Manufacture And Refinement Of Metals (AREA)
Abstract
Description
Cr | Al | Mg | U | Th | Pb | Bi | N | 纯度 | |
Ni原料 | 300 | 100 | 60 | 300 | 100 | 100 | 60 | 100 | 99.9 |
V原料 | 800 | 550 | 300 | 1100 | 1050 | 750 | 100 | 700 | 99.0 |
实施例1 | 1 | 2 | 1 | <0.1 | <0.1 | <0.1 | <0.1 | <10 | 99.999 |
1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 差 | |
V(%) | 7.20 | 7.17 | 7.19 | 7.21 | 7.18 | 7.21 | 7.22 | 7.18 | 7.23 | 7.24 | 0.07 |
N(ppm) | 30 | 20 | 30 | 40 | 30 | 30 | 20 | 30 | 20 | 20 | - |
Cr | Al | Mg | U | Th | Pb | Bi | N | 纯度 | |
Ni原料 | 7 | 6 | 3 | 1 | 1 | 5 | 3 | 30 | 99.9 |
V原料 | 500 | 40000 | 100 | 250 | 550 | 1000 | 300 | 1000 | 95.0 |
实施例2 | 9 | 10 | 7 | 1 | 1 | <0.1 | <0.1 | 30 | 99.995 |
1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 差 | |
V(%) | 7.10 | 7.22 | 7.25 | 7.28 | 7.20 | 7.15 | 7.11 | 7.28 | 7.10 | 7.25 | 0.18 |
N(ppm) | 90 | 20 | 30 | 10 | 20 | 50 | 100 | 40 | 70 | 5 | - |
Cr | Al | Mg | U | Th | Pb | Bi | N | 纯度 | |
Ni原料 | 300 | 100 | 60 | 300 | 100 | 100 | 60 | 100 | 99.0 |
V原料 | 70 | 10 | 10 | 10 | 10 | 15 | 12 | 100 | 99.95 |
实施例3 | 5 | 8 | 9 | 2 | 1 | 1 | 1 | 70 | 99.995 |
1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 差 | |
V(%) | 7.23 | 7.15 | 7.13 | 7.26 | 7.23 | 7.20 | 7.18 | 7.25 | 7.16 | 7.19 | 0.12 |
N(ppm) | 30 | 20 | 30 | 40 | 30 | 30 | 20 | 30 | 20 | 20 | - |
Cr | Al | Mg | U | Th | Pb | Bi | N | 纯度 | |
Ni原料 | 300 | 100 | 60 | 300 | 100 | 100 | 60 | 100 | 99.0 |
V原料 | 800 | 550 | 300 | 1100 | 1050 | 750 | 100 | 700 | 99.0 |
比较例1 | 350 | 120 | 70 | 380 | 200 | 120 | 70 | 150 | 99.0 |
1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 差 | |
V(%) | 6.8 | 7.5 | 6.9 | 7.8 | 7.3 | 7.5 | 7.0 | 7.2 | 7.7 | 6.7 | 1.1 |
N(ppm) | 150 | 100 | 130 | 180 | 120 | 250 | 110 | 160 | 130 | 190 | - |
Cr | Al | Mg | U | Th | Pb | Bi | N | 纯度 | |
Ni原料 | 7 | 6 | 3 | 1 | 1 | 5 | 3 | 30 | 99.9 |
V原料 | 500 | 40000 | 100 | 250 | 550 | 1000 | 300 | 1000 | 95.0 |
比较例2 | 12 | 80 | 10 | 12 | 36 | 32 | 15 | 100 | - |
1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 差 | |
V(%) | 7.3 | 8.1 | 7.9 | 8.5 | 7.6 | 7.4 | 8.3 | 8.0 | 7.7 | 7.9 | 1.2 |
N(ppm) | 80 | 90 | 130 | 50 | 80 | 60 | 140 | 50 | 90 | 100 | - |
Claims (6)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP348119/2003 | 2003-10-07 | ||
JP2003348119 | 2003-10-07 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2007101865812A Division CN101186979B (zh) | 2003-10-07 | 2004-09-08 | 高纯度Ni-V合金的制造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1852998A true CN1852998A (zh) | 2006-10-25 |
CN100516266C CN100516266C (zh) | 2009-07-22 |
Family
ID=34430953
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2004800268128A Active CN100516266C (zh) | 2003-10-07 | 2004-09-08 | 高纯度Ni-V合金、由该Ni-V合金形成的靶以及该Ni-V合金薄膜和高纯度Ni-V合金的制造方法 |
CN2007101865812A Active CN101186979B (zh) | 2003-10-07 | 2004-09-08 | 高纯度Ni-V合金的制造方法 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2007101865812A Active CN101186979B (zh) | 2003-10-07 | 2004-09-08 | 高纯度Ni-V合金的制造方法 |
Country Status (7)
Country | Link |
---|---|
US (2) | US8871144B2 (zh) |
EP (1) | EP1672086B1 (zh) |
JP (2) | JP4447556B2 (zh) |
KR (1) | KR100773238B1 (zh) |
CN (2) | CN100516266C (zh) |
TW (1) | TW200513544A (zh) |
WO (1) | WO2005035809A1 (zh) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102154578A (zh) * | 2011-03-22 | 2011-08-17 | 北京工业大学 | 一种无磁性织构NiV合金基带及其熔炼制备方法 |
CN104480329A (zh) * | 2014-12-07 | 2015-04-01 | 金川集团股份有限公司 | 一种制备金属合金铸块的方法 |
CN106290425A (zh) * | 2016-07-13 | 2017-01-04 | 东莞中子科学中心 | 一种用于制备中子散射实验样品盒的钒镍合金及其应用 |
CN110358957A (zh) * | 2019-07-31 | 2019-10-22 | 江苏美特林科特殊合金股份有限公司 | 一种镍钒中间合金及其制备方法 |
CN110468382A (zh) * | 2019-09-12 | 2019-11-19 | 南京达迈科技实业有限公司 | 一种含微量元素的大管径Ni-V旋转靶材及其制备方法 |
CN111549324A (zh) * | 2020-06-17 | 2020-08-18 | 宁波江丰电子材料股份有限公司 | 一种NiV合金靶材及其成型的方法与用途 |
CN115747536A (zh) * | 2022-10-11 | 2023-03-07 | 散裂中子源科学中心 | 一种中子散射实验用钒镍合金及其制备方法和应用 |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4376487B2 (ja) * | 2002-01-18 | 2009-12-02 | 日鉱金属株式会社 | 高純度ニッケル合金ターゲットの製造方法 |
JP4466902B2 (ja) * | 2003-01-10 | 2010-05-26 | 日鉱金属株式会社 | ニッケル合金スパッタリングターゲット |
WO2005041290A1 (ja) * | 2003-10-24 | 2005-05-06 | Nikko Materials Co., Ltd. | ニッケル合金スパッタリングターゲット及びニッケル合金薄膜 |
KR101021488B1 (ko) * | 2004-03-01 | 2011-03-16 | Jx닛코 닛세끼 킨조쿠 가부시키가이샤 | 니켈-플라티늄 합금 및 동(同) 합금 타겟트 |
CN101660123B (zh) * | 2008-08-28 | 2013-08-14 | 长沙天鹰金属材料有限公司 | 一种镍基靶材及生产工艺 |
US20100108503A1 (en) * | 2008-10-31 | 2010-05-06 | Applied Quantum Technology, Llc | Chalcogenide alloy sputter targets for photovoltaic applications and methods of manufacturing the same |
JP2009167530A (ja) | 2009-02-10 | 2009-07-30 | Nippon Mining & Metals Co Ltd | ニッケル合金スパッタリングターゲット及びニッケルシリサイド膜 |
TWI408049B (zh) * | 2010-11-17 | 2013-09-11 | Jx Nippon Mining & Metals Corp | Copper foil for printed wiring board |
JP4799710B1 (ja) * | 2010-11-17 | 2011-10-26 | Jx日鉱日石金属株式会社 | プリント配線板用銅箔 |
CN104014767B (zh) * | 2014-06-05 | 2016-05-04 | 贵研铂业股份有限公司 | 一种制备NiV合金靶材的方法 |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA1180779A (en) * | 1981-09-25 | 1985-01-08 | Elliott Philofsky | Ceramic capacitor and method of making same |
JPH0635654B2 (ja) | 1985-08-13 | 1994-05-11 | 住友特殊金属株式会社 | 雰囲気変動に対する薄膜磁気特性の安定度の高いタ−ゲツト材 |
JPH06104120A (ja) * | 1992-08-03 | 1994-04-15 | Hitachi Metals Ltd | 磁気記録媒体用スパッタリングターゲットおよびその製造方法 |
JPH1136065A (ja) | 1997-07-16 | 1999-02-09 | Sanken Electric Co Ltd | ニッケルを主成分とする導体層の形成方法 |
US5964966A (en) * | 1997-09-19 | 1999-10-12 | Lockheed Martin Energy Research Corporation | Method of forming biaxially textured alloy substrates and devices thereon |
JPH11335821A (ja) * | 1998-05-20 | 1999-12-07 | Japan Energy Corp | 磁性薄膜形成用Ni−Fe合金スパッタリングターゲット、磁性薄膜および磁性薄膜形成用Ni−Fe合金スパッタリングターゲットの製造方法 |
JP4017747B2 (ja) | 1998-06-04 | 2007-12-05 | 株式会社アルバック | Bm膜製造方法 |
IT1302855B1 (it) | 1998-06-15 | 2000-10-10 | Enea Ente Nuove Tec | Substrato metallico non magnetico per superconduttori ad altatemperatura e relativo procedimento di produzione. |
JP2000169957A (ja) | 1998-12-04 | 2000-06-20 | Sumitomo Metal Mining Co Ltd | V−Ni系ターゲット材料、電極材料、及び実装部品 |
US6342114B1 (en) * | 1999-03-31 | 2002-01-29 | Praxair S.T. Technology, Inc. | Nickel/vanadium sputtering target with ultra-low alpha emission |
AU1750901A (en) * | 1999-07-23 | 2001-03-05 | American Superconductor Corporation | Dust cover/pellicle for a photomask |
JP3853591B2 (ja) | 1999-12-17 | 2006-12-06 | ジオマテック株式会社 | 遮光膜、低反射膜およびその用途 |
JP4487225B2 (ja) | 2000-03-23 | 2010-06-23 | 日立金属株式会社 | Ni−Nb系ターゲット材およびロウ材用下地膜 |
US7435325B2 (en) * | 2001-08-01 | 2008-10-14 | Nippon Mining & Metals Co., Ltd | Method for producing high purity nickle, high purity nickle, sputtering target comprising the high purity nickel, and thin film formed by using said spattering target |
JP2003213405A (ja) | 2002-01-18 | 2003-07-30 | Nikko Materials Co Ltd | 高純度ニッケル又はニッケル合金ターゲット及びその製造方法 |
JP4376487B2 (ja) * | 2002-01-18 | 2009-12-02 | 日鉱金属株式会社 | 高純度ニッケル合金ターゲットの製造方法 |
US20030188426A1 (en) * | 2002-04-05 | 2003-10-09 | Display Research Laboratories, Inc. | Method and system for fabricating and transferring microcircuits |
CN1723292A (zh) * | 2002-12-09 | 2006-01-18 | 霍尼韦尔国际公司 | 高纯镍/钒溅射构件和制备溅射构件的方法 |
JP4466902B2 (ja) * | 2003-01-10 | 2010-05-26 | 日鉱金属株式会社 | ニッケル合金スパッタリングターゲット |
WO2005041290A1 (ja) | 2003-10-24 | 2005-05-06 | Nikko Materials Co., Ltd. | ニッケル合金スパッタリングターゲット及びニッケル合金薄膜 |
KR101021488B1 (ko) * | 2004-03-01 | 2011-03-16 | Jx닛코 닛세끼 킨조쿠 가부시키가이샤 | 니켈-플라티늄 합금 및 동(同) 합금 타겟트 |
US20070074779A1 (en) * | 2005-09-27 | 2007-04-05 | Kim Sung S | Safety piping system |
TWI428671B (zh) * | 2009-11-10 | 2014-03-01 | Hortek Crystal Co Ltd | 雷射加工裝置 |
-
2004
- 2004-09-08 WO PCT/JP2004/013027 patent/WO2005035809A1/ja active Application Filing
- 2004-09-08 EP EP04787710.5A patent/EP1672086B1/en active Active
- 2004-09-08 KR KR1020067005951A patent/KR100773238B1/ko active IP Right Grant
- 2004-09-08 CN CNB2004800268128A patent/CN100516266C/zh active Active
- 2004-09-08 CN CN2007101865812A patent/CN101186979B/zh active Active
- 2004-09-08 JP JP2005514540A patent/JP4447556B2/ja active Active
- 2004-09-08 US US10/570,748 patent/US8871144B2/en active Active
- 2004-09-17 TW TW093128206A patent/TW200513544A/zh unknown
-
2009
- 2009-10-19 JP JP2009240465A patent/JP5080543B2/ja active Active
-
2010
- 2010-06-09 US US12/796,718 patent/US7938918B2/en active Active
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102154578A (zh) * | 2011-03-22 | 2011-08-17 | 北京工业大学 | 一种无磁性织构NiV合金基带及其熔炼制备方法 |
CN104480329A (zh) * | 2014-12-07 | 2015-04-01 | 金川集团股份有限公司 | 一种制备金属合金铸块的方法 |
CN106290425A (zh) * | 2016-07-13 | 2017-01-04 | 东莞中子科学中心 | 一种用于制备中子散射实验样品盒的钒镍合金及其应用 |
CN110358957A (zh) * | 2019-07-31 | 2019-10-22 | 江苏美特林科特殊合金股份有限公司 | 一种镍钒中间合金及其制备方法 |
CN110468382A (zh) * | 2019-09-12 | 2019-11-19 | 南京达迈科技实业有限公司 | 一种含微量元素的大管径Ni-V旋转靶材及其制备方法 |
WO2021046928A1 (zh) * | 2019-09-12 | 2021-03-18 | 南京达迈科技实业有限公司 | 一种含微量元素的大管径Ni-V旋转靶材及其制备方法 |
CN110468382B (zh) * | 2019-09-12 | 2021-04-09 | 南京达迈科技实业有限公司 | 一种含微量元素的大管径Ni-V旋转靶材及其制备方法 |
CN111549324A (zh) * | 2020-06-17 | 2020-08-18 | 宁波江丰电子材料股份有限公司 | 一种NiV合金靶材及其成型的方法与用途 |
CN115747536A (zh) * | 2022-10-11 | 2023-03-07 | 散裂中子源科学中心 | 一种中子散射实验用钒镍合金及其制备方法和应用 |
Also Published As
Publication number | Publication date |
---|---|
KR100773238B1 (ko) | 2007-11-02 |
CN101186979A (zh) | 2008-05-28 |
TW200513544A (en) | 2005-04-16 |
US8871144B2 (en) | 2014-10-28 |
JP5080543B2 (ja) | 2012-11-21 |
EP1672086B1 (en) | 2019-03-13 |
US20100242674A1 (en) | 2010-09-30 |
WO2005035809A1 (ja) | 2005-04-21 |
US20060292028A1 (en) | 2006-12-28 |
EP1672086A4 (en) | 2008-04-09 |
TWI291995B (zh) | 2008-01-01 |
JP2010047845A (ja) | 2010-03-04 |
EP1672086A1 (en) | 2006-06-21 |
JP4447556B2 (ja) | 2010-04-07 |
JPWO2005035809A1 (ja) | 2008-06-12 |
US7938918B2 (en) | 2011-05-10 |
KR20060057017A (ko) | 2006-05-25 |
CN100516266C (zh) | 2009-07-22 |
CN101186979B (zh) | 2012-06-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1852998A (zh) | 高纯度Ni-V合金、由该Ni-V合金形成的靶以及该Ni-V合金薄膜和高纯度Ni-V合金的制造方法 | |
US9441289B2 (en) | High-purity copper or high-purity copper alloy sputtering target, process for manufacturing the sputtering target, and high-purity copper or high-purity copper alloy sputtered film | |
CN1280446C (zh) | Ag-Bi基合金溅射靶及其制备方法 | |
US7578965B2 (en) | High-purity Ru powder, sputtering target obtained by sintering the same, thin film obtained by sputtering the target and process for producing high-purity Ru powder | |
CN107923034B (zh) | 高纯度铜溅射靶材 | |
CN1314832C (zh) | 高纯度镍或镍合金靶及其制造方法 | |
EP2284289B1 (en) | Tungsten sintered material sputtering target | |
EP2484463B1 (en) | Method for producing high-purity tungsten powder | |
US20110123389A1 (en) | High Purity Copper and Method of Producing High Purity Copper Based on Electrolysis | |
JP2008045161A (ja) | プラズマ処理装置に用いられる陽極酸化処理用アルミニウム合金およびその製造方法、陽極酸化皮膜を有するアルミニウム合金部材、ならびにプラズマ処理装置 | |
WO2015151498A1 (ja) | スパッタリングターゲットの製造方法およびスパッタリングターゲット | |
JP2015034337A (ja) | 高純度銅スパッタリングターゲット用銅素材及び高純度銅スパッタリングターゲット | |
JP7121883B2 (ja) | スパッタリングターゲット材 | |
KR20150114584A (ko) | 스퍼터링용 티탄 타깃 | |
JP4198811B2 (ja) | 高純度チタンの製造方法 | |
CN1759202A (zh) | 铪合金靶及其制造方法 | |
JP5660701B2 (ja) | 高純度バナジウム、高純度バナジウムターゲット及び高純度バナジウムス薄膜 | |
JP2002129313A (ja) | パーティクル発生の少ない高純度銅スパッタリングターゲット | |
JP2000212678A (ja) | 薄膜形成用高純度タンタル及びその製造方法 | |
JP4831594B2 (ja) | 高純度バナジウムスパッタリングターゲットの製造方法 | |
WO2015046319A1 (ja) | In合金スパッタリングターゲット、その製造方法及びIn合金膜 | |
JPH1161392A (ja) | Ru薄膜形成用スパッタリングターゲットの製造方法 | |
CN1777703A (zh) | 溅射沉积薄膜的均匀固溶体合金 | |
JP4286367B2 (ja) | スパッタリングターゲット、配線膜および電子部品 | |
TWI433953B (zh) | Sputtering titanium target |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C56 | Change in the name or address of the patentee |
Owner name: JX NIPPON MINING + METALS CORPORATION Free format text: FORMER NAME: NIPPON MINING + METALS CO., LTD. |
|
CP03 | Change of name, title or address |
Address after: Tokyo, Japan Patentee after: JX Nippon Mining & Metals Corporation Address before: Tokyo, Japan Patentee before: Nippon Mining & Metals Co., Ltd. |
|
CP01 | Change in the name or title of a patent holder |
Address after: Tokyo, Japan Patentee after: JX NIPPON MINING & METALS CORPORATION Address before: Tokyo, Japan Patentee before: JX Nippon Mining & Metals Corporation |
|
CP01 | Change in the name or title of a patent holder |