KR100745516B1 - 비휘발성 반도체 기억장치 및 판독방법 - Google Patents

비휘발성 반도체 기억장치 및 판독방법 Download PDF

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Publication number
KR100745516B1
KR100745516B1 KR1020050065632A KR20050065632A KR100745516B1 KR 100745516 B1 KR100745516 B1 KR 100745516B1 KR 1020050065632 A KR1020050065632 A KR 1020050065632A KR 20050065632 A KR20050065632 A KR 20050065632A KR 100745516 B1 KR100745516 B1 KR 100745516B1
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South Korea
Prior art keywords
memory cell
voltage
column
row
read
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KR1020050065632A
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Korean (ko)
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KR20060053918A (ko
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히데치카 카와조에
유키오 타마이
아쯔시 시마오카
히데노리 모리모토
노부요시 아와야
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샤프 가부시키가이샤
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0023—Address circuits or decoders
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/004—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/30—Resistive cell, memory material aspects
    • G11C2213/31—Material having complex metal oxide, e.g. perovskite structure
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/77—Array wherein the memory element being directly connected to the bit lines and word lines without any access device being used
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/79—Array wherein the access device being a transistor

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Read Only Memory (AREA)
KR1020050065632A 2004-07-28 2005-07-20 비휘발성 반도체 기억장치 및 판독방법 KR100745516B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2004219810 2004-07-28
JPJP-P-2004-00219810 2004-07-28
JPJP-P-2005-00193329 2005-07-01
JP2005193329A JP4189395B2 (ja) 2004-07-28 2005-07-01 不揮発性半導体記憶装置及び読み出し方法

Publications (2)

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KR20060053918A KR20060053918A (ko) 2006-05-22
KR100745516B1 true KR100745516B1 (ko) 2007-08-02

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Country Status (6)

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US (1) US7535746B2 (de)
EP (1) EP1622163B1 (de)
JP (1) JP4189395B2 (de)
KR (1) KR100745516B1 (de)
DE (1) DE602005012028D1 (de)
TW (1) TWI277973B (de)

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Also Published As

Publication number Publication date
DE602005012028D1 (de) 2009-02-12
US7535746B2 (en) 2009-05-19
TWI277973B (en) 2007-04-01
JP4189395B2 (ja) 2008-12-03
EP1622163A1 (de) 2006-02-01
JP2006066052A (ja) 2006-03-09
US20060023497A1 (en) 2006-02-02
TW200620276A (en) 2006-06-16
EP1622163B1 (de) 2008-12-31
KR20060053918A (ko) 2006-05-22

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