KR100563853B1 - 발광 소자의 제조 방법 - Google Patents
발광 소자의 제조 방법 Download PDFInfo
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- KR100563853B1 KR100563853B1 KR1019997011064A KR19997011064A KR100563853B1 KR 100563853 B1 KR100563853 B1 KR 100563853B1 KR 1019997011064 A KR1019997011064 A KR 1019997011064A KR 19997011064 A KR19997011064 A KR 19997011064A KR 100563853 B1 KR100563853 B1 KR 100563853B1
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 87
- 238000000034 method Methods 0.000 claims abstract description 35
- 229910052751 metal Inorganic materials 0.000 claims abstract description 23
- 239000002184 metal Substances 0.000 claims abstract description 23
- 230000005496 eutectics Effects 0.000 claims abstract description 11
- 239000000463 material Substances 0.000 claims abstract description 9
- 238000003631 wet chemical etching Methods 0.000 claims abstract description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 9
- 229910000679 solder Inorganic materials 0.000 claims description 6
- 230000008878 coupling Effects 0.000 claims description 5
- 238000010168 coupling process Methods 0.000 claims description 5
- 238000005859 coupling reaction Methods 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 238000005304 joining Methods 0.000 claims description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims 1
- 239000012780 transparent material Substances 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 19
- 238000005530 etching Methods 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000005275 alloying Methods 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 239000006023 eutectic alloy Substances 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000001534 heteroepitaxy Methods 0.000 description 1
- 230000003100 immobilizing effect Effects 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
EP-0 616 376 A1호에는 LED-층을 웨이퍼 본딩하기 위한 방법이 공지되어 있으며, 상기 방법에서 LED-층은 추후에 제거될 성장 기판상에서 제조된다. 제 2 기판에서 낮은 콘택 저항 또는 원하는 광학 경계면 특성을 얻기 위해, 상기 LED-층은 종래의 웨이퍼 본딩 기술에 의해 적합한 광학적 특성을 갖는 제 2 기판과 표면 결합된다.
JP-A 5 251 739호에는 혼합색을 형성하기 위해서 적색의 GaAsP-LED 및 녹색의 GaP-LED가 전기적으로 콘택팅되는 발광 반도체 장치가 공지되어 있으며, 상기 장치에서는 2개의 LED를 서로 전기적으로 콘택팅하기 위해서 공융 합금의 사용이 제안된다.
Claims (9)
- - 베이스 기판(1)의 앞면에 적어도 하나의 활성층(3)을 포함하는 연속층(2, 3, 4, 5)을 형성한 후에 상기 베이스 기판(1)을 적어도 부분적으로 제거하고, 그 다음에 상기 연속층(2, 3, 4, 5)을 외부 기판(9)에 결합하는 단계, 및- 커버된 연속층(2, 3, 4, 5)의 뒷면(6)과 외부 기판(9)의 커버된 앞면(8)을 열을 이용한 공융 본딩에 의해서 서로 결합하는 단계로 이루어진, 발광 소자의 제조 방법에 있어서,- 제거된 베이스 기판(1)의 앞면을 향하고 있는 연속층(2, 3, 4, 5)의 뒷면(6)에는 제 1 금속 콘택층(7)을 구조화하고, 외부 기판(9)의 앞면(8)에는 제 2 금속 콘택층(10)을 구조화하는 단계,- 상기 제 1 및 제 2 금속 콘택층(7, 10)을 상기 2개의 구조화된 콘택층(7, 10) 사이에 있는 적어도 하나의 추가 납땜층을 이용한 공융 본딩에 의해서 서로 결합하는 단계, 및- 상기 연속층의 커버된 뒷면과 상기 외부 기판의 연속층의 커버된 앞면의 결합을 오직 구조화된 금속 콘택층을 통해서만 실행하는 단계를 포함하는 것을 특징으로 하는 방법.
- 제 1항에 있어서,상기 제 1 및 제 2 금속 콘택층(7, 10)을 공융 본딩하기 위해 금을 함유하는 납땜층을 사용하는 것을 특징으로 하는 방법.
- 제 1항 또는 제 2항에 있어서,상기 외부 기판(9)을 투과성 재료로 구성하는 것을 특징으로 하는 방법.
- 제 1항 또는 제 2항에 있어서,GaAs-베이스 기판(1)상에 에피택셜 증착된 연속층(2, 3, 4, 5)은 InGaAlP 또는 GaAs 또는 AlGaAs중 하나의 재료를 함유하는 활성층(3)을 갖는 것을 특징으로 하는 방법.
- 제 1항 또는 제 2항에 있어서,상기 에피택셜 증착된 연속층(2, 3, 4, 5)은 베이스 기판(1)으로부터 시작하여 제 1 외부층(2), 활성층(3), 제 2 외부층(4) 및 감결합층(5)을 포함하는 것을 특징으로 하는 방법.
- 제 1항 또는 제 2항에 있어서,다수의 발광성 소자를 웨이퍼 결합부내에서 제조하며, 상기 웨이퍼의 직경은 2인치 이상인 것을 특징으로 하는 방법.
- 제 1항 또는 제 2항에 있어서,상기 베이스 기판(1) 및 상기 외부 기판(9)으로부터 다른 쪽을 향하고 있는 연속층(2, 3, 4)의 앞면에 감결합층(5)을 제공하며, 상기 감결합층(5)상에 구조화되어 증착된 금속 전극층(13)을 제공하는 것을 특징으로 하는 방법.
- 제 1항 또는 제 2항에 있어서,상기 베이스 기판(1)을 습식-화학 에칭에 의해 상기 베이스 기판 재료에 대해 선택적으로 작용하는 에칭제로 제거하는 것을 특징으로 하는 방법.
- 제 8항에 있어서,상기 베이스 기판(1)을 습식-화학 에칭하는 단계 전에 베이스 기판(1)을 기 계적으로 얇게하는 단계를 선행적으로 실시하는 것을 특징으로 하는 방법.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19722156.4 | 1997-05-27 | ||
DE19722156 | 1997-05-27 | ||
PCT/DE1998/001412 WO1998054764A1 (de) | 1997-05-27 | 1998-05-22 | Verfahren zur herstellung eines lichtemittierenden bauelementes |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20010013085A KR20010013085A (ko) | 2001-02-26 |
KR100563853B1 true KR100563853B1 (ko) | 2006-03-24 |
Family
ID=7830629
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019997011064A KR100563853B1 (ko) | 1997-05-27 | 1998-05-22 | 발광 소자의 제조 방법 |
Country Status (8)
Country | Link |
---|---|
US (1) | US6221683B1 (ko) |
EP (1) | EP0985235B1 (ko) |
JP (3) | JP4020977B2 (ko) |
KR (1) | KR100563853B1 (ko) |
DE (1) | DE59809873D1 (ko) |
RU (1) | RU2177189C2 (ko) |
TW (1) | TW393787B (ko) |
WO (1) | WO1998054764A1 (ko) |
Families Citing this family (34)
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US6784463B2 (en) * | 1997-06-03 | 2004-08-31 | Lumileds Lighting U.S., Llc | III-Phospide and III-Arsenide flip chip light-emitting devices |
DE10017337C2 (de) * | 2000-04-07 | 2002-04-04 | Vishay Semiconductor Gmbh | Verfahren zum Herstellen lichtaussendender Halbleiterbauelemente |
US6903381B2 (en) * | 2003-04-24 | 2005-06-07 | Opto Tech Corporation | Light-emitting diode with cavity containing a filler |
DE102004016697B4 (de) * | 2004-02-27 | 2007-10-11 | Osram Opto Semiconductors Gmbh | Verfahren zum Herstellen von Halbleiterchips umfassend ein Verbindungsverfahren, das Löten mit einem Lot umfasst, und Halbleiterchip |
US7473936B2 (en) * | 2005-01-11 | 2009-01-06 | Semileds Corporation | Light emitting diodes (LEDs) with improved light extraction by roughening |
US20060154393A1 (en) * | 2005-01-11 | 2006-07-13 | Doan Trung T | Systems and methods for removing operating heat from a light emitting diode |
US7524686B2 (en) * | 2005-01-11 | 2009-04-28 | Semileds Corporation | Method of making light emitting diodes (LEDs) with improved light extraction by roughening |
US8680534B2 (en) | 2005-01-11 | 2014-03-25 | Semileds Corporation | Vertical light emitting diodes (LED) having metal substrate and spin coated phosphor layer for producing white light |
US7432119B2 (en) * | 2005-01-11 | 2008-10-07 | Semileds Corporation | Light emitting diode with conducting metal substrate |
US7195944B2 (en) * | 2005-01-11 | 2007-03-27 | Semileds Corporation | Systems and methods for producing white-light emitting diodes |
US8871547B2 (en) | 2005-01-11 | 2014-10-28 | SemiLEDs Optoelectronics Co., Ltd. | Method for fabricating vertical light emitting diode (VLED) structure using a laser pulse to remove a carrier substrate |
US7563625B2 (en) * | 2005-01-11 | 2009-07-21 | SemiLEDs Optoelectronics Co., Ltd. | Method of making light-emitting diodes (LEDs) with improved light extraction by roughening |
US7186580B2 (en) * | 2005-01-11 | 2007-03-06 | Semileds Corporation | Light emitting diodes (LEDs) with improved light extraction by roughening |
US7378288B2 (en) * | 2005-01-11 | 2008-05-27 | Semileds Corporation | Systems and methods for producing light emitting diode array |
US20060151801A1 (en) * | 2005-01-11 | 2006-07-13 | Doan Trung T | Light emitting diode with thermo-electric cooler |
US7897420B2 (en) * | 2005-01-11 | 2011-03-01 | SemiLEDs Optoelectronics Co., Ltd. | Light emitting diodes (LEDs) with improved light extraction by roughening |
US7413918B2 (en) * | 2005-01-11 | 2008-08-19 | Semileds Corporation | Method of making a light emitting diode |
US8802465B2 (en) | 2005-01-11 | 2014-08-12 | SemiLEDs Optoelectronics Co., Ltd. | Method for handling a semiconductor wafer assembly |
US7646033B2 (en) * | 2005-01-11 | 2010-01-12 | Semileds Corporation | Systems and methods for producing white-light light emitting diodes |
US9130114B2 (en) | 2005-01-11 | 2015-09-08 | SemiLEDs Optoelectronics Co., Ltd. | Vertical light emitting diode (VLED) dice having confinement layers with roughened surfaces and methods of fabrication |
US20060237735A1 (en) * | 2005-04-22 | 2006-10-26 | Jean-Yves Naulin | High-efficiency light extraction structures and methods for solid-state lighting |
CN101385145B (zh) | 2006-01-05 | 2011-06-08 | 伊鲁米特克斯公司 | 用于引导来自led的光的分立光学装置 |
TWI305960B (en) * | 2006-06-16 | 2009-02-01 | Opto Tech Corp | Light emitting diode and method manufacturing the same |
WO2008042351A2 (en) | 2006-10-02 | 2008-04-10 | Illumitex, Inc. | Led system and method |
TWI324403B (en) * | 2006-11-07 | 2010-05-01 | Opto Tech Corp | Light emitting diode and method manufacturing the same |
US8283683B2 (en) | 2006-11-07 | 2012-10-09 | Opto Tech Corporation | Chip-bonding light emitting diode chip |
KR101421415B1 (ko) * | 2007-02-12 | 2014-07-22 | 코닌클리케 필립스 엔.브이. | 대면적 발광 다이오드 광원 |
US20080303033A1 (en) * | 2007-06-05 | 2008-12-11 | Cree, Inc. | Formation of nitride-based optoelectronic and electronic device structures on lattice-matched substrates |
KR20100122485A (ko) | 2008-02-08 | 2010-11-22 | 일루미텍스, 인크. | 발광체층 쉐이핑을 위한 시스템 및 방법 |
TW201034256A (en) | 2008-12-11 | 2010-09-16 | Illumitex Inc | Systems and methods for packaging light-emitting diode devices |
JP2010267813A (ja) * | 2009-05-14 | 2010-11-25 | Toshiba Corp | 発光素子及びその製造方法 |
US8449128B2 (en) | 2009-08-20 | 2013-05-28 | Illumitex, Inc. | System and method for a lens and phosphor layer |
US8585253B2 (en) | 2009-08-20 | 2013-11-19 | Illumitex, Inc. | System and method for color mixing lens array |
US20140077246A1 (en) * | 2011-06-01 | 2014-03-20 | Koninklijke Philips N.V. | Light emitting device bonded to a support substrate |
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JPS6081884A (ja) * | 1983-10-11 | 1985-05-09 | Nec Corp | 半導体発光装置 |
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US5300788A (en) * | 1991-01-18 | 1994-04-05 | Kopin Corporation | Light emitting diode bars and arrays and method of making same |
JPH05251739A (ja) * | 1992-03-06 | 1993-09-28 | Toshiba Corp | 半導体発光デバイス |
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-
1998
- 1998-05-22 EP EP98934777A patent/EP0985235B1/de not_active Expired - Lifetime
- 1998-05-22 DE DE59809873T patent/DE59809873D1/de not_active Expired - Lifetime
- 1998-05-22 WO PCT/DE1998/001412 patent/WO1998054764A1/de active IP Right Grant
- 1998-05-22 RU RU99126759/28A patent/RU2177189C2/ru not_active IP Right Cessation
- 1998-05-22 KR KR1019997011064A patent/KR100563853B1/ko not_active IP Right Cessation
- 1998-05-22 JP JP50009199A patent/JP4020977B2/ja not_active Expired - Lifetime
- 1998-05-25 TW TW087108060A patent/TW393787B/zh not_active IP Right Cessation
-
1999
- 1999-11-29 US US09/450,398 patent/US6221683B1/en not_active Expired - Lifetime
-
2006
- 2006-03-10 JP JP2006065668A patent/JP2006196919A/ja active Pending
-
2007
- 2007-05-11 JP JP2007126779A patent/JP2007201516A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
WO1998054764A1 (de) | 1998-12-03 |
JP2007201516A (ja) | 2007-08-09 |
JP2006196919A (ja) | 2006-07-27 |
DE59809873D1 (de) | 2003-11-13 |
KR20010013085A (ko) | 2001-02-26 |
TW393787B (en) | 2000-06-11 |
RU2177189C2 (ru) | 2001-12-20 |
JP2002503391A (ja) | 2002-01-29 |
EP0985235A1 (de) | 2000-03-15 |
EP0985235B1 (de) | 2003-10-08 |
JP4020977B2 (ja) | 2007-12-12 |
US6221683B1 (en) | 2001-04-24 |
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