KR0148325B1 - 반도체 소자의 금속 배선 형성방법 - Google Patents
반도체 소자의 금속 배선 형성방법 Download PDFInfo
- Publication number
- KR0148325B1 KR0148325B1 KR1019950004447A KR19950004447A KR0148325B1 KR 0148325 B1 KR0148325 B1 KR 0148325B1 KR 1019950004447 A KR1019950004447 A KR 1019950004447A KR 19950004447 A KR19950004447 A KR 19950004447A KR 0148325 B1 KR0148325 B1 KR 0148325B1
- Authority
- KR
- South Korea
- Prior art keywords
- titanium nitride
- nitride film
- film
- forming
- titanium
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 33
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 29
- 239000002184 metal Substances 0.000 title claims abstract description 29
- 239000004065 semiconductor Substances 0.000 title claims abstract description 21
- 230000015572 biosynthetic process Effects 0.000 title 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims abstract description 44
- 239000010936 titanium Substances 0.000 claims abstract description 19
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 16
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 13
- 238000000151 deposition Methods 0.000 claims abstract description 11
- 239000010408 film Substances 0.000 claims description 61
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- 239000010409 thin film Substances 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 2
- 230000004888 barrier function Effects 0.000 abstract description 13
- 238000009792 diffusion process Methods 0.000 abstract description 13
- 239000002245 particle Substances 0.000 abstract description 9
- 239000002994 raw material Substances 0.000 abstract description 5
- 230000008021 deposition Effects 0.000 abstract description 3
- 238000010438 heat treatment Methods 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 238000005240 physical vapour deposition Methods 0.000 abstract description 3
- 239000012528 membrane Substances 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 239000010949 copper Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
- H01L21/76861—Post-treatment or after-treatment not introducing additional chemical elements into the layer
- H01L21/76864—Thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
- H01L21/76846—Layer combinations
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950004447A KR0148325B1 (ko) | 1995-03-04 | 1995-03-04 | 반도체 소자의 금속 배선 형성방법 |
JP8070955A JPH08250596A (ja) | 1995-03-04 | 1996-03-04 | 半導体装置の金属配線形成方法 |
TW085102622A TW288171B (ja) | 1995-03-04 | 1996-03-04 | |
CN96104048A CN1057868C (zh) | 1995-03-04 | 1996-03-04 | 形成半导体器件金属互连的方法 |
GB9604614A GB2298657B (en) | 1995-03-04 | 1996-03-04 | Methods of forming metal interconnects in semiconductor devices |
DE19608208A DE19608208B4 (de) | 1995-03-04 | 1996-03-04 | Verfahren zur Herstellung von Metallzwischenverbindungen in Halbleitereinrichtungen |
JP11290109A JP3122845B2 (ja) | 1995-03-04 | 1999-10-12 | 半導体装置の金属配線形成方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950004447A KR0148325B1 (ko) | 1995-03-04 | 1995-03-04 | 반도체 소자의 금속 배선 형성방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR960035843A KR960035843A (ko) | 1996-10-28 |
KR0148325B1 true KR0148325B1 (ko) | 1998-12-01 |
Family
ID=19409231
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019950004447A KR0148325B1 (ko) | 1995-03-04 | 1995-03-04 | 반도체 소자의 금속 배선 형성방법 |
Country Status (6)
Country | Link |
---|---|
JP (2) | JPH08250596A (ja) |
KR (1) | KR0148325B1 (ja) |
CN (1) | CN1057868C (ja) |
DE (1) | DE19608208B4 (ja) |
GB (1) | GB2298657B (ja) |
TW (1) | TW288171B (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100480576B1 (ko) * | 1997-12-15 | 2005-05-16 | 삼성전자주식회사 | 반도체장치의금속배선형성방법 |
KR100494320B1 (ko) * | 1997-12-30 | 2005-08-31 | 주식회사 하이닉스반도체 | 반도체소자의확산방지막형성방법 |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100430684B1 (ko) * | 1996-12-31 | 2004-07-30 | 주식회사 하이닉스반도체 | 반도체소자의금속배선형성방법 |
JP3040715U (ja) * | 1997-02-19 | 1997-08-26 | 株式会社熊谷 | 包装袋 |
KR100559028B1 (ko) * | 1998-12-29 | 2006-06-15 | 주식회사 하이닉스반도체 | 반도체 소자의 구리 배선 형성 방법 |
KR100495856B1 (ko) * | 1998-12-30 | 2005-09-02 | 주식회사 하이닉스반도체 | 반도체 소자의 구리 금속 배선 형성 방법 |
JP3562628B2 (ja) * | 1999-06-24 | 2004-09-08 | 日本電気株式会社 | 拡散バリア膜、多層配線構造、およびそれらの製造方法 |
US6569751B1 (en) * | 2000-07-17 | 2003-05-27 | Lsi Logic Corporation | Low via resistance system |
DE10154500B4 (de) * | 2001-11-07 | 2004-09-23 | Infineon Technologies Ag | Verfahren zur Herstellung dünner, strukturierter, metallhaltiger Schichten mit geringem elektrischen Widerstand |
JP4683188B2 (ja) | 2002-11-29 | 2011-05-11 | 日本電気株式会社 | 半導体装置およびその製造方法 |
JP4222841B2 (ja) * | 2003-01-15 | 2009-02-12 | 三洋電機株式会社 | 半導体装置の製造方法 |
TW200526806A (en) * | 2004-01-15 | 2005-08-16 | Tokyo Electron Ltd | Film-forming method |
US7253501B2 (en) * | 2004-08-03 | 2007-08-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | High performance metallization cap layer |
US20060113675A1 (en) * | 2004-12-01 | 2006-06-01 | Chung-Liang Chang | Barrier material and process for Cu interconnect |
JP5204964B2 (ja) * | 2006-10-17 | 2013-06-05 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
CN101017793B (zh) * | 2007-02-16 | 2013-06-05 | 上海集成电路研发中心有限公司 | 一种扩散阻挡层的制作方法 |
CN101459174B (zh) * | 2007-12-13 | 2010-07-07 | 和舰科技(苏州)有限公司 | 一种半导体晶片的导电结构及其制造方法 |
CN102810504A (zh) * | 2011-05-31 | 2012-12-05 | 无锡华润上华半导体有限公司 | 厚铝生长工艺方法 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0174743A3 (en) * | 1984-09-05 | 1988-06-08 | Morton Thiokol, Inc. | Process for transition metal nitrides thin film deposition |
EP0209654B1 (en) * | 1985-05-13 | 1994-12-14 | Kabushiki Kaisha Toshiba | Semiconductor device having wiring electrodes |
US4998157A (en) * | 1988-08-06 | 1991-03-05 | Seiko Epson Corporation | Ohmic contact to silicon substrate |
EP0448763A1 (de) * | 1990-03-30 | 1991-10-02 | Siemens Aktiengesellschaft | Verfahren und Vorrichtung zur Herstellung von leitenden Schichten oder Strukturen für höchstintegrierte Schaltungen |
US5136362A (en) * | 1990-11-27 | 1992-08-04 | Grief Malcolm K | Electrical contact with diffusion barrier |
EP0514103A1 (en) * | 1991-05-14 | 1992-11-19 | STMicroelectronics, Inc. | Barrier metal process for sub-micron contacts |
US5242860A (en) * | 1991-07-24 | 1993-09-07 | Applied Materials, Inc. | Method for the formation of tin barrier layer with preferential (111) crystallographic orientation |
US5308655A (en) * | 1991-08-16 | 1994-05-03 | Materials Research Corporation | Processing for forming low resistivity titanium nitride films |
US5462895A (en) * | 1991-09-04 | 1995-10-31 | Oki Electric Industry Co., Ltd. | Method of making semiconductor device comprising a titanium nitride film |
JPH05121378A (ja) * | 1991-10-29 | 1993-05-18 | Sony Corp | 半導体装置の製造方法 |
US5254499A (en) * | 1992-07-14 | 1993-10-19 | Micron Technology, Inc. | Method of depositing high density titanium nitride films on semiconductor wafers |
JP2570576B2 (ja) * | 1993-06-25 | 1997-01-08 | 日本電気株式会社 | 半導体装置の製造方法 |
US5494860A (en) * | 1995-03-14 | 1996-02-27 | International Business Machines Corporation | Two step annealing process for decreasing contact resistance |
-
1995
- 1995-03-04 KR KR1019950004447A patent/KR0148325B1/ko not_active IP Right Cessation
-
1996
- 1996-03-04 TW TW085102622A patent/TW288171B/zh active
- 1996-03-04 JP JP8070955A patent/JPH08250596A/ja active Pending
- 1996-03-04 CN CN96104048A patent/CN1057868C/zh not_active Expired - Fee Related
- 1996-03-04 GB GB9604614A patent/GB2298657B/en not_active Expired - Fee Related
- 1996-03-04 DE DE19608208A patent/DE19608208B4/de not_active Expired - Fee Related
-
1999
- 1999-10-12 JP JP11290109A patent/JP3122845B2/ja not_active Expired - Fee Related
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100480576B1 (ko) * | 1997-12-15 | 2005-05-16 | 삼성전자주식회사 | 반도체장치의금속배선형성방법 |
KR100494320B1 (ko) * | 1997-12-30 | 2005-08-31 | 주식회사 하이닉스반도체 | 반도체소자의확산방지막형성방법 |
Also Published As
Publication number | Publication date |
---|---|
JP3122845B2 (ja) | 2001-01-09 |
TW288171B (ja) | 1996-10-11 |
JP2000082742A (ja) | 2000-03-21 |
DE19608208B4 (de) | 2006-02-23 |
GB2298657B (en) | 1998-09-30 |
JPH08250596A (ja) | 1996-09-27 |
DE19608208A1 (de) | 1996-09-05 |
GB9604614D0 (en) | 1996-05-01 |
GB2298657A (en) | 1996-09-11 |
CN1141506A (zh) | 1997-01-29 |
CN1057868C (zh) | 2000-10-25 |
KR960035843A (ko) | 1996-10-28 |
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