JPWO2014123107A1 - 化合物、リソグラフィー用下層膜形成材料、リソグラフィー用下層膜及びパターン形成方法 - Google Patents
化合物、リソグラフィー用下層膜形成材料、リソグラフィー用下層膜及びパターン形成方法 Download PDFInfo
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- JPWO2014123107A1 JPWO2014123107A1 JP2014560765A JP2014560765A JPWO2014123107A1 JP WO2014123107 A1 JPWO2014123107 A1 JP WO2014123107A1 JP 2014560765 A JP2014560765 A JP 2014560765A JP 2014560765 A JP2014560765 A JP 2014560765A JP WO2014123107 A1 JPWO2014123107 A1 JP WO2014123107A1
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- 125000004213 tert-butoxy group Chemical group [H]C([H])([H])C(O*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
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- DZLFLBLQUQXARW-UHFFFAOYSA-N tetrabutylammonium Chemical compound CCCC[N+](CCCC)(CCCC)CCCC DZLFLBLQUQXARW-UHFFFAOYSA-N 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- MANNXDXMUHZSRP-UHFFFAOYSA-M tetramethylazanium;trifluoromethanesulfonate Chemical compound C[N+](C)(C)C.[O-]S(=O)(=O)C(F)(F)F MANNXDXMUHZSRP-UHFFFAOYSA-M 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 150000007979 thiazole derivatives Chemical class 0.000 description 1
- 125000005068 thioepoxy group Chemical group S(O*)* 0.000 description 1
- 150000003573 thiols Chemical class 0.000 description 1
- 229930192474 thiophene Natural products 0.000 description 1
- 125000003944 tolyl group Chemical group 0.000 description 1
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 1
- YNJBWRMUSHSURL-UHFFFAOYSA-N trichloroacetic acid Chemical compound OC(=O)C(Cl)(Cl)Cl YNJBWRMUSHSURL-UHFFFAOYSA-N 0.000 description 1
- ABVVEAHYODGCLZ-UHFFFAOYSA-N tridecan-1-amine Chemical compound CCCCCCCCCCCCCN ABVVEAHYODGCLZ-UHFFFAOYSA-N 0.000 description 1
- SWZDQOUHBYYPJD-UHFFFAOYSA-N tridodecylamine Chemical compound CCCCCCCCCCCCN(CCCCCCCCCCCC)CCCCCCCCCCCC SWZDQOUHBYYPJD-UHFFFAOYSA-N 0.000 description 1
- AANIRNIRVXARSN-UHFFFAOYSA-M trifluoromethanesulfonate;trimethylsulfanium Chemical compound C[S+](C)C.[O-]S(=O)(=O)C(F)(F)F AANIRNIRVXARSN-UHFFFAOYSA-M 0.000 description 1
- UPWIJTYOHJOEOX-UHFFFAOYSA-M trifluoromethanesulfonate;trinaphthalen-1-ylsulfanium Chemical compound [O-]S(=O)(=O)C(F)(F)F.C1=CC=C2C([S+](C=3C4=CC=CC=C4C=CC=3)C=3C4=CC=CC=C4C=CC=3)=CC=CC2=C1 UPWIJTYOHJOEOX-UHFFFAOYSA-M 0.000 description 1
- 125000002023 trifluoromethyl group Chemical group FC(F)(F)* 0.000 description 1
- 125000001889 triflyl group Chemical group FC(F)(F)S(*)(=O)=O 0.000 description 1
- RKBCYCFRFCNLTO-UHFFFAOYSA-N triisopropylamine Chemical compound CC(C)N(C(C)C)C(C)C RKBCYCFRFCNLTO-UHFFFAOYSA-N 0.000 description 1
- 125000003258 trimethylene group Chemical group [H]C([H])([*:2])C([H])([H])C([H])([H])[*:1] 0.000 description 1
- ODHXBMXNKOYIBV-UHFFFAOYSA-N triphenylamine Chemical compound C1=CC=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 ODHXBMXNKOYIBV-UHFFFAOYSA-N 0.000 description 1
- WLOQLWBIJZDHET-UHFFFAOYSA-N triphenylsulfonium Chemical compound C1=CC=CC=C1[S+](C=1C=CC=CC=1)C1=CC=CC=C1 WLOQLWBIJZDHET-UHFFFAOYSA-N 0.000 description 1
- 239000012953 triphenylsulfonium Substances 0.000 description 1
- YFTHZRPMJXBUME-UHFFFAOYSA-N tripropylamine Chemical compound CCCN(CCC)CCC YFTHZRPMJXBUME-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000004704 ultra performance liquid chromatography Methods 0.000 description 1
- 150000003672 ureas Chemical class 0.000 description 1
- HGBOYTHUEUWSSQ-UHFFFAOYSA-N valeric aldehyde Natural products CCCCC=O HGBOYTHUEUWSSQ-UHFFFAOYSA-N 0.000 description 1
- 229960000834 vinyl ether Drugs 0.000 description 1
- UKRDPEFKFJNXQM-UHFFFAOYSA-N vinylsilane Chemical class [SiH3]C=C UKRDPEFKFJNXQM-UHFFFAOYSA-N 0.000 description 1
- 235000005074 zinc chloride Nutrition 0.000 description 1
- 239000011592 zinc chloride Substances 0.000 description 1
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Abstract
Description
[1]下記一般式(1)で表される構造を有する化合物を含有する、リソグラフィー用下層膜形成材料。
前記下層膜上に、少なくとも1層のフォトレジスト層を形成する工程(A−2)と、
前記工程(A−2)の後、前記フォトレジスト層の所定の領域に放射線を照射し、アルカリ現像を行う工程(A−3)と、
を有する、パターン形成方法。
前記下層膜上に、珪素原子を含有するレジスト中間層膜材料を用いて中間層膜を形成する工程(B−2)と、
前記中間層膜上に、少なくとも1層のフォトレジスト層を形成する工程(B−3)と、
前記工程(B−3)の後、前記フォトレジスト層の所定の領域に放射線を照射し、アルカリ現像してレジストパターンを形成する工程(B−4)と、
前記工程(B−4)の後、前記レジストパターンをマスクとして前記中間層膜をエッチングし、得られた中間層膜パターンをエッチングマスクとして前記下層膜をエッチングし、得られた下層膜パターンをエッチングマスクとして基板をエッチングすることで基板にパターンを形成する工程(B−5)と、
を有する、パターン形成方法。
(リソグラフィー用下層膜形成材料)
本実施形態の化合物は、下記一般式(1)で表される。本実施形態の化合物は、このような構造を有するため、耐熱性が高く、炭素濃度が比較的に高く、酸素濃度が比較的に低く、溶媒溶解性も高い。また、本実施形態のリソグラフィー用下層膜形成材料は、本実施形態の化合物を含有するものである。このような構成を有するため、本実施形態のリソグラフィー用下層膜形成材料は、湿式プロセスが適用可能であり、耐熱性及びエッチング耐性に優れる。さらに、本実施形態のリソグラフィー用下層膜形成材料は、上述した特定構造の化合物又は樹脂を用いているため、高温ベーク時の膜の劣化が抑制され、酸素プラズマエッチング等に対するエッチング耐性にも優れた下層膜を形成することがでる。さらにまた、本実施形態のリソグラフィー用下層膜形成材料は、レジスト層との密着性にも優れるので、優れたレジストパターンを得ることができる。
本実施形態のリソグラフィー用下層膜形成材料は、上述した一般式(1)で表される構造を有する化合物以外に、必要に応じて、架橋剤、酸発生剤、有機溶媒等の他の成分を含んでいてもよい。以下、これらの任意成分について説明する。
本実施形態で使用可能な架橋剤の具体例としては、例えば、メラミン化合物、グアナミン化合物、グリコールウリル化合物、ウレア化合物、エポキシ化合物、チオエポキシ化合物、イソシアネート化合物、アジド化合物、アルケニルエーテル基などの2重結合を含む化合物であって、メチロール基、アルコキシメチル基、アシロキシメチル基から選ばれる少なくとも一つの基を置換基(架橋性基)として有するものなどが挙げるが、これらに特に限定されない。なお、これらの架橋剤は、1種を単独で、或いは2種以上を組み合わせて用いることができる。また、これらは添加剤として用いてもよい。なお、上記架橋性基を上記一般式(1)で示される化合物におけるポリマー側鎖にペンダント基として導入してもよい。また、ヒドロキシ基を含む化合物も架橋剤として用いることができる。
1)下記一般式(P1a−1)、(P1a−2)、(P1a−3)又は(P1b)のオニウム塩、
2)下記一般式(P2)のジアゾメタン誘導体、
3)下記一般式(P3)のグリオキシム誘導体、
4)下記一般式(P4)のビススルホン誘導体、
5)下記一般式(P5)のN−ヒドロキシイミド化合物のスルホン酸エステル、
6)β−ケトスルホン酸誘導体、
7)ジスルホン誘導体、
8)ニトロベンジルスルホネート誘導体、
9)スルホン酸エステル誘導体
等が挙げられるが、これらに特に限定されない。なお、これらの酸発生剤は、1種を単独で、或いは2種以上を組み合わせて用いることができる。
これらのなかでも、特に、トリフルオロメタンスルホン酸トリフェニルスルホニウム、トリフルオロメタンスルホン酸(p−tert−ブトキシフェニル)ジフェニルスルホニウム、トリフルオロメタンスルホン酸トリス(p−tert−ブトキシフェニル)スルホニウム、p−トルエンスルホン酸トリフェニルスルホニウム、p−トルエンスルホン酸(p−tert−ブトキシフェニル)ジフェニルスルホニウム、p−トルエンスルホン酸トリス(p−tert−ブトキシフェニル)スルホニウム、トリフルオロメタンスルホン酸トリナフチルスルホニウム、トリフルオロメタンスルホン酸シクロヘキシルメチル(2−オキソシクロヘキシル)スルホニウム、トリフルオロメタンスルホン酸(2−ノルボニル)メチル(2−オキソシクロヘキシル)スルホニウム、1,2’−ナフチルカルボニルメチルテトラヒドロチオフェニウムトリフレート等のオニウム塩;ビス(ベンゼンスルホニル)ジアゾメタン、ビス(p−トルエンスルホニル)ジアゾメタン、ビス(シクロヘキシルスルホニル)ジアゾメタン、ビス(n−ブチルスルホニル)ジアゾメタン、ビス(イソブチルスルホニル)ジアゾメタン、ビス(sec−ブチルスルホニル)ジアゾメタン、ビス(n−プロピルスルホニル)ジアゾメタン、ビス(イソプロピルスルホニル)ジアゾメタン、ビス(tert−ブチルスルホニル)ジアゾメタン等のジアゾメタン誘導体;ビス−(p−トルエンスルホニル)−α−ジメチルグリオキシム、ビス−(n−ブタンスルホニル)−α−ジメチルグリオキシム等のグリオキシム誘導体;ビスナフチルスルホニルメタン等のビススルホン誘導体;N−ヒドロキシスクシンイミドメタンスルホン酸エステル、N−ヒドロキシスクシンイミドトリフルオロメタンスルホン酸エステル、N−ヒドロキシスクシンイミド1−プロパンスルホン酸エステル、N−ヒドロキシスクシンイミド2−プロパンスルホン酸エステル、N−ヒドロキシスクシンイミド1−ペンタンスルホン酸エステル、N−ヒドロキシスクシンイミドp−トルエンスルホン酸エステル、N−ヒドロキシナフタルイミドメタンスルホン酸エステル、N−ヒドロキシナフタルイミドベンゼンスルホン酸エステル等のN−ヒドロキシイミド化合物のスルホン酸エステル誘導体が好ましく用いられる。
有機溶媒の具体例としては、アセトン、メチルエチルケトン、メチルイソブチルケトン、シクロヘキサノン等のケトン系溶媒;プロピレングリコールモノメチルエーテル、プロピレングリコールモノメチルエーテルアセテート等のセロソルブ系溶媒;乳酸エチル、酢酸メチル、酢酸エチル、酢酸ブチル、酢酸イソアミル、乳酸エチル、メトキシプロピオン酸メチル、ヒドロキシイソ酪酸メチル等のエステル系溶媒;メタノール、エタノール、イソプロパノール、1−エトキシ−2−プロパノール等のアルコール系溶媒;トルエン、キシレン、アニソール等の芳香族系炭化水素等が挙げられるが、これらに特に限定されない。これらの有機溶媒は、1種を単独で、或いは2種以上を組み合わせて用いることができる。
本実施形態のリソグラフィー用下層膜は、本実施形態のリソグラフィー用下層膜形成材料から形成されることを特徴とする。
このような中間層膜の上に直接フォトレジスト膜を形成することができるが、中間層膜の上に有機反射防止膜(BARC)をスピンコートで形成して、その上にフォトレジスト膜を形成してもよい。
なお、基板は、公知のものを適宜選択して使用することができ、特に限定されないが、Si、α−Si、p−Si、SiO2、SiN、SiON、W、TiN、Al等が挙げられる。また、基板は、基材(支持体)上に被加工膜(被加工基板)を有する積層体であってもよい。このような被加工膜としては、Si、SiO2、SiON、SiN、p−Si、α−Si、W、W−Si、Al、Cu、Al−Si等種々のLow−k膜及びそのストッパー膜等が挙げられ、通常、基材(支持体)とは異なる材質のものが用いられる。なお、加工対象となる基板或いは被加工膜の厚さは、特に限定されないが、通常、50〜10,000nm程度であることが好ましく、より好ましくは75〜5,000nmである。
有機元素分析により炭素濃度及び酸素濃度(質量%)を測定した。
装置:CHNコーダーMT−6(ヤナコ分析工業(株)製)
(分子量)
GC−MS分析により、Agilent社製Agilent5975/6890Nを用いて測定した。あるいは、LC−MS分析により、Water社製Acquity UPLC/MALDI−Synapt HDMSを用いて測定した。
(ポリスチレン換算分子量)
ゲル浸透クロマトグラフィー(GPC)分析により、ポリスチレン換算の重量平均分子量(Mw)、数平均分子量(Mn)を求め、分散度(Mw/Mn)を求めた。
装置:Shodex GPC−101型(昭和電工(株)製)
カラム:KF−80M×3
溶離液:THF 1ml/min
温度:40℃
(熱分解温度(Tg))
エスアイアイ・ナノテクノロジー社製EXSTAR6000DSC装置を使用し、試料約5mgをアルミニウム製非密封容器に入れ、窒素ガス(30ml/min)気流中昇温速度10℃/minで500℃まで昇温した。その際、ベースラインに減少部分が現れる温度を熱分解温度(Tg)とした。
(溶解度)
23℃にて、化合物の1−メトキシ−2−プロパノール(PGME)及びプロピレングリコールモノメチルエーテルアセテート(PGMEA)に対する溶解量を測定し、その結果を以下の基準で評価した。
評価A:10wt%以上
評価B:3wt%以上10wt%未満
評価C:3wt%未満
攪拌機、冷却管及びビュレットを備えた内容積100mlの容器を準備した。この容器に、2,6−ジヒドロキシナフタレン(シグマ−アルドリッチ社製試薬)1.10g(10mmol)と、4−ビフェニルアルデヒド(三菱瓦斯化学社製)1.82g(10mmol)と、メチルイソブチルケトン30mlとを仕込み、95%の硫酸5mlを加えて、反応液を調製した。この反応液を100℃で6時間撹拌して反応を行った。次に、反応液を濃縮し、純水50gを加えて反応生成物を析出させ、室温まで冷却した後、濾過を行って分離した。濾過により得られた固形物を乾燥させた後、カラムクロマトによる分離精製を行うことにより、下記式で示される目的化合物(BisN−1)0.10g及び(BisN−2)0.05gを得た。
なお、400MHz−1H−NMRにより以下のピークが見出され、下記式の化学構造を有することを確認した。
化合物 BisN−1
1H−NMR:(d−DMSO、内部標準TMS)
δ(ppm)9.6(2H,O−H)、7.2〜8.3(32H,Ph−H)、6.6(2H,C−H)
化合物 BisN−2
1H−NMR:(d−DMSO、内部標準TMS)
δ(ppm)9.6(2H,O−H)、7.2〜8.4(45H,Ph−H)、6.6(3H,C−H)
また、化合物BisN−2の炭素濃度は87.92%、酸素濃度は7.41%であった。化合物BisN−1及び化合物BisN−2は炭素含有率が高く、酸素含有率が低いことから、高いエッチング耐性を有するものと評価された。
得られた化合物について、前記方法により分子量を測定した結果、化合物BisN−1は772、化合物BisN−2は1078であった。
熱重量測定(TG)の結果、化合物BisN−1及び化合物BisN−2の熱分解温度はいずれも400℃以上であった。そのため、化合物BisN−1及び化合物BisN−2は高い耐熱性を有し、高温ベークへの適用が可能であるものと評価された。
化合物BisN−1及び化合物BisN−2のPGME及びPGMEAに対する溶解性は、10wt%以上(評価A)であり、化合物BisN−1及び化合物BisN−2は優れた溶解性を有するものと評価された。そのため、化合物BisN−1及び化合物BisN−2は溶液状態での高い保存安定性を有し、半導体微細加工プロセスで広く用いられるエッジビートリンス液(PGME/PGMEA混合液)にも十分に適用できるものと評価された。
ジムロート冷却管、温度計及び攪拌翼を備えた、底抜きが可能な内容積10Lの四つ口フラスコを準備した。この四つ口フラスコに、窒素気流中、1,5−ジメチルナフタレン1.09kg(7mol、三菱ガス化学(株)製)、40質量%ホルマリン水溶液2.1kg(ホルムアルデヒドとして28mol、三菱ガス化学(株)製)及び98質量%硫酸(関東化学(株)製)0.97mlを仕込み、常圧下、100℃で還流させながら7時間反応させた。その後、希釈溶媒としてエチルベンゼン(和光純薬工業(株)製試薬特級)1.8kgを反応液に加え、静置後、下相の水相を除去した。さらに、中和及び水洗を行い、エチルベンゼン及び未反応の1,5−ジメチルナフタレンを減圧下で留去することにより、淡褐色固体のジメチルナフタレンホルムアルデヒド樹脂1.25kgを得た。
得られたジメチルナフタレンホルムアルデヒドの分子量は、Mn:562、Mw:1168、Mw/Mn:2.08であった。また、炭素濃度は84.2質量%、酸素濃度は8.3質量%であった。
得られた樹脂(CR−1)は、Mn:885、Mw:2220、Mw/Mn:4.17であった。また、炭素濃度は89.1質量%、酸素濃度は4.5質量%であった。
表1に示す組成となるように、実施例1〜2、比較例1に対応するリソグラフィー用下層膜形成材料を各々調製した。すなわち、下記の材料を使用した。
酸発生剤:みどり化学社製 ジターシャリーブチルジフェニルヨードニウムノナフルオロメタンスルホナート(DTDPI)
架橋剤:三和ケミカル社製 ニカラックMX270(ニカラック)
有機溶媒:シクロヘキサノン(CHN)
ノボラック:群栄化学社製 PSM4357
次に、実施例1〜2、比較例1の下層膜形成材料をシリコン基板上に回転塗布し、その後、240℃で60秒間、さらに400℃で120秒間ベークして、膜厚200nmの下層膜を各々作製した。
そして、下記に示す条件でエッチング試験を行い、エッチング耐性を評価した。評価結果を表1に示す。
エッチング装置:サムコインターナショナル社製 RIE−10NR
出力:50W
圧力:20Pa
時間:2min
エッチングガス
Arガス流量:CF4ガス流量:O2ガス流量=50:5:5(sccm)
[エッチング耐性の評価]
エッチング耐性の評価は、以下の手順で行った。
まず、実施例1の化合物(BisN−1)に代えてノボラック(群栄化学社製 PSM4357)を用いること以外は、実施例1と同様の条件で、ノボラックの下層膜を作製した。そして、このノボラックの下層膜を対象として、上記のエッチング試験を行い、そのときのエッチングレートを測定した。
次に、実施例1、2及び比較例1の下層膜を対象として、上記エッチング試験を同様に行い、そのときのエッチングレートを測定した。
そして、ノボラックの下層膜のエッチングレートを基準として、以下の評価基準でエッチング耐性を評価した。
<評価基準>
A:ノボラックの下層膜に比べてエッチングレートが、−10%未満
B:ノボラックの下層膜に比べてエッチングレートが、−10%〜+5%
C:ノボラックの下層膜に比べてエッチングレートが、+5%超
次に、実施例1〜2のリソグラフィー用下層膜形成材料の溶液を膜厚300nmのSiO2基板上に塗布して、240℃で60秒間、さらに400℃で120秒間ベークすることにより、膜厚80nmの下層膜を各々形成した。この下層膜上に、ArF用レジスト溶液を塗布し、130℃で60秒間ベークすることにより、膜厚150nmのフォトレジスト層を形成した。なお、ArFレジスト溶液としては、下記式(11)の化合物:5質量部、トリフェニルスルホニウムノナフルオロメタンスルホナート:1質量部、トリブチルアミン:2質量部、及びPGMEA:92質量部を配合して調製したものを用いた。
なお、下記式(11)の化合物は、次のように調製した。すなわち、2−メチル−2−メタクリロイルオキシアダマンタン4.15g、メタクリルロイルオキシ−γ−ブチロラクトン3.00g、3−ヒドロキシ−1−アダマンチルメタクリレート2.08g、アゾビスイソブチロニトリル0.38gを、テトラヒドロフラン80mLに溶解させて反応溶液とした。この反応溶液を、窒素雰囲気下、反応温度を63℃に保持して、22時間重合させた後、反応溶液を400mLのn−ヘキサン中に滴下した。このようにして得られる生成樹脂を凝固精製させ、生成した白色粉末をろ過し、減圧下40℃で一晩乾燥させて下記式(11)の化合物を得た。
下層膜の形成を行わないこと以外は、実施例2と同様にして、フォトレジスト層をSiO2基板上に直接形成し、ポジ型のレジストパターンを得た。
実施例3〜4及び比較例2のそれぞれについて、得られた55nmL/S(1:1)及び80nmL/S(1:1)のレジストパターンの形状を(株)日立製作所製電子顕微鏡(S−4800)を用いて観察した。現像後のレジストパターンの形状については、パターン倒れがなく、矩形性が良好なものを良好とし、そうでないものを不良として評価した。また、当該観察の結果、パターン倒れが無く、矩形性が良好な最小の線幅を解像性として評価の指標とした。さらに、良好なパターン形状を描画可能な最小の電子線エネルギー量を感度として、評価の指標とした。その結果を、表2に示す。
実施例1〜2のリソグラフィー用下層膜形成材料の溶液を膜厚300nmのSiO2基板上に塗布して、240℃で60秒間、さらに400℃で120秒間ベークすることにより、膜厚80nmの下層膜を形成した。この下層膜上に、珪素含有中間層材料を塗布した。次いで、200℃で60秒間ベークすることにより、膜厚35nmの中間層膜を形成した。さらに、この中間層膜上に、実施例3〜4で用いたArF用レジスト溶液を塗布し、130℃で60秒間ベークすることにより、膜厚150nmのフォトレジスト層を形成した。なお、珪素含有中間層材料としては、特開2007−226170号公報<合成例1>に記載の珪素原子含有ポリマーを用いた。
次いで、電子線描画装置(エリオニクス社製;ELS−7500,50keV)を用いて、フォトレジスト層を露光し、115℃で90秒間ベーク(PEB)し、2.38質量%テトラメチルアンモニウムヒドロキシド(TMAH)水溶液で60秒間現像することにより、55nmL/S(1:1)のポジ型のレジストパターンを得た。
その後、サムコインターナショナル社製 RIE−10NRを用いて、得られたレジストパターンをマスクにして珪素含有中間層膜(SOG)のドライエッチング加工を行った。続いて、得られた珪素含有中間層膜パターンをマスクにした下層膜のドライエッチング加工と、得られた下層膜パターンをマスクにしたSiO2膜のドライエッチング加工とを順次行った。
レジストパターンのレジスト中間層膜へのエッチング条件
出力:50W
圧力:20Pa
時間:1min
エッチングガス
Arガス流量:CF4ガス流量:O2ガス流量=50:8:2(sccm)
レジスト中間膜パターンのレジスト下層膜へのエッチング条件
出力:50W
圧力:20Pa
時間:2min
エッチングガス
Arガス流量:CF4ガス流量:O2ガス流量=50:5:5(sccm)
レジスト下層膜パターンのSiO 2 膜へのエッチング条件
出力:50W
圧力:20Pa
時間:2min
エッチングガス
Arガス流量:C5F12ガス流量:C2F6ガス流量:O2ガス流量
=50:4:3:1(sccm)
上記のようにして得られた実施例5〜6のパターン断面(エッチング後のSiO2膜の形状)を、(株)日立製作所製電子顕微鏡(S−4800)を用いて観察した。その結果、多層レジスト加工におけるエッチング後のSiO2膜の形状は矩形であり、欠陥も認められず、本発明の下層膜を用いた実施例5〜6は、パターン断面においても良好な形状を有することが確認された。
Claims (19)
- 有機溶媒をさらに含有する、請求項1〜11のいずれか一項に記載のリソグラフィー用下層膜形成材料。
- 酸発生剤をさらに含有する、請求項1〜12のいずれか一項に記載のリソグラフィー用下層膜形成材料。
- 架橋剤をさらに含有する、請求項1〜13のいずれか一項に記載のリソグラフィー用下層膜形成材料。
- 請求項1〜14のいずれか一項に記載のリソグラフィー用下層膜形成材料から形成される、リソグラフィー用下層膜。
- 基板上に、請求項1〜14のいずれか一項に記載の下層膜形成材料を用いて下層膜を形成する工程(A−1)と、
前記下層膜上に、少なくとも1層のフォトレジスト層を形成する工程(A−2)と、
前記工程(A−2)の後、前記フォトレジスト層の所定の領域に放射線を照射し、アルカリ現像を行う工程(A−3)と、
を有する、パターン形成方法。 - 基板上に、請求項1〜14のいずれか一項に記載の下層膜形成材料を用いて下層膜を形成する工程(B−1)と、
前記下層膜上に、珪素原子を含有するレジスト中間層膜材料を用いて中間層膜を形成する工程(B−2)と、
前記中間層膜上に、少なくとも1層のフォトレジスト層を形成する工程(B−3)と、
前記工程(B−3)の後、前記フォトレジスト層の所定の領域に放射線を照射し、アルカリ現像してレジストパターンを形成する工程(B−4)と、
前記工程(B−4)の後、前記レジストパターンをマスクとして前記中間層膜をエッチングし、得られた中間層膜パターンをエッチングマスクとして前記下層膜をエッチングし、得られた下層膜パターンをエッチングマスクとして基板をエッチングすることで基板にパターンを形成する工程(B−5)と、
を有する、パターン形成方法。
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PCT/JP2014/052530 WO2014123107A1 (ja) | 2013-02-08 | 2014-02-04 | 化合物、リソグラフィー用下層膜形成材料、リソグラフィー用下層膜及びパターン形成方法 |
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EP (1) | EP2955577B1 (ja) |
JP (1) | JP6388126B2 (ja) |
KR (1) | KR102178662B1 (ja) |
CN (1) | CN104969127B (ja) |
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KR102154109B1 (ko) * | 2013-02-08 | 2020-09-09 | 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 | 화합물, 리소그래피용 하층막 형성재료, 리소그래피용 하층막 및 패턴 형성방법 |
EP2955577B1 (en) | 2013-02-08 | 2018-01-31 | Mitsubishi Gas Chemical Company, Inc. | Compound, material for forming underlayer film for lithography, underlayer film for lithography, and pattern forming method |
WO2014123032A1 (ja) | 2013-02-08 | 2014-08-14 | 三菱瓦斯化学株式会社 | レジスト組成物、レジストパターン形成方法及びそれに用いるポリフェノール誘導体 |
JP7026439B2 (ja) | 2014-12-25 | 2022-02-28 | 三菱瓦斯化学株式会社 | 化合物、樹脂、リソグラフィー用下層膜形成材料、リソグラフィー用下層膜、パターン形成方法及び精製方法 |
US11256170B2 (en) | 2015-03-31 | 2022-02-22 | Mitsubishi Gas Chemical Company, Inc. | Compound, resist composition, and method for forming resist pattern using it |
EP3279190B1 (en) | 2015-03-31 | 2020-08-12 | Mitsubishi Gas Chemical Company, Inc. | Resist composition, method for forming resist pattern, and polyphenol compound used therein |
JP6880537B2 (ja) * | 2015-07-22 | 2021-06-02 | 三菱瓦斯化学株式会社 | 化合物、樹脂、リソグラフィー用下層膜形成材料、リソグラフィー用下層膜形成用組成物、リソグラフィー用下層膜及びレジストパターン形成方法、回路パターン形成方法、及び、精製方法 |
KR20180048799A (ko) | 2015-08-31 | 2018-05-10 | 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 | 리소그래피용 하층막 형성재료, 리소그래피용 하층막 형성용 조성물, 리소그래피용 하층막 및 그 제조방법, 그리고 레지스트 패턴형성방법 |
JP6919838B2 (ja) | 2015-08-31 | 2021-08-18 | 三菱瓦斯化学株式会社 | リソグラフィー用下層膜形成材料、リソグラフィー用下層膜形成用組成物、リソグラフィー用下層膜及びその製造方法、パターン形成方法、樹脂、並びに精製方法 |
JP6848869B2 (ja) | 2015-09-10 | 2021-03-24 | 三菱瓦斯化学株式会社 | 化合物、樹脂、レジスト組成物又は感放射線性組成物、レジストパターン形成方法、アモルファス膜の製造方法、リソグラフィー用下層膜形成材料、リソグラフィー用下層膜形成用組成物、回路パターンの形成方法、及び、精製方法 |
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2014
- 2014-02-04 EP EP14749602.0A patent/EP2955577B1/en not_active Not-in-force
- 2014-02-04 WO PCT/JP2014/052530 patent/WO2014123107A1/ja active Application Filing
- 2014-02-04 KR KR1020157021507A patent/KR102178662B1/ko active IP Right Grant
- 2014-02-04 CN CN201480007892.6A patent/CN104969127B/zh active Active
- 2014-02-04 US US14/766,499 patent/US9809601B2/en active Active
- 2014-02-04 JP JP2014560765A patent/JP6388126B2/ja active Active
- 2014-02-07 TW TW103104078A patent/TWI632145B/zh active
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Also Published As
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KR20150115793A (ko) | 2015-10-14 |
EP2955577A4 (en) | 2016-07-13 |
CN104969127B (zh) | 2019-11-26 |
JP6388126B2 (ja) | 2018-09-12 |
TWI632145B (zh) | 2018-08-11 |
TW201446770A (zh) | 2014-12-16 |
CN104969127A (zh) | 2015-10-07 |
WO2014123107A1 (ja) | 2014-08-14 |
US9809601B2 (en) | 2017-11-07 |
EP2955577B1 (en) | 2018-01-31 |
KR102178662B1 (ko) | 2020-11-13 |
EP2955577A1 (en) | 2015-12-16 |
US20150376202A1 (en) | 2015-12-31 |
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