JPWO2013175897A1 - 基板処理装置及び基板処理方法 - Google Patents
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Abstract
Description
以下、実施例及び比較例に基づいて本発明をより具体的に説明するが、本発明は以下の実施例に限定されるものではない。
比較例1では、図5に示すように基板Bの上面から絶縁層104の上面までエッチングしたものを初期状態とし、電子顕微鏡で観察した。また、HF/CH4ガスを供給して反応生成物と反応させた後、電子顕微鏡で観察した。図14の(A)は、反応生成物を除去する前(初期状態)のSEM像の模式図であり、図14の(B)は、ガスを供給した後のSEM像の模式図である。図14に示すように、HF/CH4ガスによって処理した場合、処理前後において、MRAM素子底部の幅(Btm CD)が40nmと変化がないことが確認された。すなわち、金属を含有する層のエッチングによって生成する反応生成物は、反応ガスのみでは除去できないことが確認された。
実施例1では、図4の状態を初期状態とし、基板Bの上面から絶縁層104の上面までエッチングして電子顕微鏡で観察した。また、図10に示すプラズマ処理装置10により、反応生成物を除去し、電子顕微鏡で観察した。実施例1では、第1処理ガスとしてBCl3及びArを用い、第2処理ガスとしてHFを用いた。詳細を以下に示す。
プラズマ源の電力:300W
BCl3ガス:280sccm
Arガス:300sccm
HFガス:2000sccm
処理時間:180秒
基板温度:150℃
実施例2では、図4の状態を初期状態とし、基板Bの上面から絶縁層104の上面までエッチングして電子顕微鏡で観察した。また、液体のHF(5%)及びPF3で反応生成物を除去し、電子顕微鏡で観察した。詳細を以下に示す。
プラズマ源の電力:0W(Non−Plasma)
PF3ガス:25sccm
処理時間:1800秒
基板温度:250℃
Claims (11)
- 被処理基体に含まれる被エッチング層がエッチングされることで堆積した反応生成物を処理する基板処理装置であって、
空間を画成する処理容器と、
前記処理容器内に配置され、前記空間をプラズマ生成空間及び基板処理空間に仕切り、イオン及び真空紫外光の透過を抑制する仕切板と、
前記プラズマ生成空間にプラズマを生成するプラズマ源と、
前記基板処理空間に配置され、前記被処理基体を載置する載置台と、
前記プラズマによって解離しラジカルを生成する第1処理ガスを前記プラズマ生成空間へ供給する第1処理ガス供給部と、
前記プラズマに晒すことなく前記反応生成物と反応させる第2処理ガスを前記基板処理空間へ供給する第2処理ガス供給部と、
を備える基板処理装置。 - 前記基板処理空間に設けられ、前記処理容器の空間を減圧する排気部をさらに備える請求項1に記載の基板処理装置。
- 前記仕切板は、少なくとも2つの板状部材からなり、
2つの前記板状部材は、前記プラズマ生成空間から前記基板処理空間へ向けて重ね合わせて配置され、
各板状部材は、重ね合わせ方向へ貫通する複数の貫通孔を有し、
一方の前記板状部材における各貫通孔は、重ね合わせ方向からみて、他方の前記板状部材における各貫通孔と重ならない請求項1又は2に記載の基板処理装置。 - 前記ラジカルは、還元反応、酸化反応、塩化反応又はフッ化反応を起こすラジカルである請求項1〜3の何れか一項に記載の基板処理装置。
- 前記第1処理ガスは、水素元素、酸素元素、塩素元素又はフッ素元素を含有するガスである請求項1〜4の何れか一項に記載の基板処理装置。
- 前記第2処理ガスは、前記反応生成物との反応が前記載置台の温度に依存するガスを含む請求項1〜5の何れか一項に記載の基板処理装置。
- 前記第2処理ガスは、電子供与性ガスを含む請求項6に記載の基板処理装置。
- 被処理基体に含まれる被エッチング層がエッチングされることで堆積した反応生成物を、基板処理装置を用いて処理する基板処理方法であって、
前記基板処理装置は、
空間を画成する処理容器と、
前記処理容器内に配置され、前記空間をプラズマ生成空間及び基板処理空間に仕切り、イオン及び真空紫外光の透過を抑制する仕切板と、
前記プラズマ生成空間にプラズマを生成するプラズマ源と、
前記基板処理空間に配置され、前記被処理基体を載置する載置台と、
前記プラズマによって解離しラジカルを生成する第1処理ガスを前記プラズマ生成空間へ供給する第1処理ガス供給部と、
前記プラズマに晒すことなく前記反応生成物と反応させる第2処理ガスを前記基板処理空間へ供給する第2処理ガス供給部と、
を備え、
前記基板処理方法は、
プラズマが生成された前記プラズマ生成空間へ前記第1処理ガス供給部から前記第1処理ガスを供給してラジカルを生成し、該ラジカルを前記基板処理空間へ供給して前記反応生成物と反応させる第1処理ステップと、
前記基板処理空間へ前記第2処理ガス供給部から前記第2処理ガスを供給して前記反応生成物と反応させる第2処理ステップと、
を備える基板処理方法。 - 前記第1処理ステップ及び前記第2処理ステップは、同一の前記基板処理装置で行われる請求項8に記載の基板処理方法。
- 前記第1処理ステップは、前記第2処理ステップより前又は同時に実施される請求項8又は9に記載の基板処理方法。
- 被エッチング層は、金属元素を含有する層である請求項8〜10の何れか一項に記載の基板処理方法。
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CN104342632B (zh) * | 2013-08-07 | 2017-06-06 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 预清洗腔室及等离子体加工设备 |
JP6516542B2 (ja) * | 2015-04-20 | 2019-05-22 | 東京エレクトロン株式会社 | 被エッチング層をエッチングする方法 |
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JP2017157778A (ja) * | 2016-03-04 | 2017-09-07 | 東京エレクトロン株式会社 | 基板処理装置 |
JP6715129B2 (ja) * | 2016-08-31 | 2020-07-01 | 東京エレクトロン株式会社 | プラズマ処理装置 |
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TWI602238B (zh) * | 2016-11-30 | 2017-10-11 | 財團法人工業技術研究院 | 氣相蝕刻反應裝置與氣相蝕刻方法 |
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JP6929148B2 (ja) | 2017-06-30 | 2021-09-01 | 東京エレクトロン株式会社 | エッチング方法およびエッチング装置 |
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US20220319809A1 (en) * | 2019-12-23 | 2022-10-06 | Hitachi High-Tech Corporation | Plasma processing apparatus |
JP7244447B2 (ja) * | 2020-02-20 | 2023-03-22 | 株式会社日立ハイテク | プラズマ処理装置 |
JP7404119B2 (ja) * | 2020-03-19 | 2023-12-25 | 住友重機械工業株式会社 | 負イオン生成装置 |
JP7486398B2 (ja) | 2020-10-19 | 2024-05-17 | 東京エレクトロン株式会社 | エッチング方法およびエッチング装置 |
US20220122820A1 (en) | 2020-10-20 | 2022-04-21 | Tokyo Electron Limited | Substrate processing apparatus |
KR20230014339A (ko) * | 2021-07-21 | 2023-01-30 | 세메스 주식회사 | 기판 처리 방법 및 기판 처리 장치 |
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EP2854160A1 (en) | 2015-04-01 |
JP6082391B2 (ja) | 2017-02-15 |
KR102107256B1 (ko) | 2020-05-06 |
JP6228694B2 (ja) | 2017-11-08 |
KR20150016490A (ko) | 2015-02-12 |
US20150132970A1 (en) | 2015-05-14 |
US20200111646A1 (en) | 2020-04-09 |
JP2017085161A (ja) | 2017-05-18 |
CN104350584B (zh) | 2017-04-19 |
US10923329B2 (en) | 2021-02-16 |
CN104350584A (zh) | 2015-02-11 |
EP2854160B1 (en) | 2020-04-08 |
EP2854160A4 (en) | 2016-01-20 |
WO2013175897A1 (ja) | 2013-11-28 |
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